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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor yk

Catalog Datasheet MFG & Type PDF Document Tags

schematic diagram 180v dc motor speed controller

Abstract: C4106 transistor YK FB_100V TV.POWER_H TV.POWER_H 2 CAUTION: DIGITAL TRANSISTOR D516 SOUND+B B , TRANSISTOR NOTE: THIS SCHEMATIC DIAGRAM IS THE LATEST AT THE TIME OF PRINTING AND SUBJECT TO CHANGE WITHOUT , F 2.7 C4030 CAUTION: DIGITAL TRANSISTOR 68 VOB COMP VCO C4047 1.8 0.01 B , 20K W894 62 CLOCK 0 1.5K R1039 4.7K 1/4W REEL-S CAUTION: DIGITAL TRANSISTOR R1080 , REC-H 53 EXT IN-L 23 RESET B 79 CAUTION: DIGITAL TRANSISTOR 5.2 CTL OUT 1 4.7K
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EM-553-F9T schematic diagram 180v dc motor speed controller C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor VX-G142 OS753 GP1U281R DTC114TS CY759

CSK6

Abstract: surge suppressor circuit ) 36.2 3.15 13.6±0.2 7±0.2 3.5 dia. M3.5 CSK4-Y/YK/YL 3.5 dia. 21.8±0.2 4 dia. CSK4-YW/YKW/YLW CSK4-Y/YK/YL 28±1 Two, M3 (or two, 3.5 dia.) 38±1 50±2 Locking mechanism* 20 , CSK6-YW/YKW/YLW CSK6-Y/YK/YL 3.5 dia. CSK6-YW/YKW/YLW CSK6-Y/YK/YL * Two, M3 (or two, 3.5 , circuit to prevent noise generation and to protect the Counter drive transistor. The diode surge
OMRON
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E67871 CSK6 surge suppressor circuit transistor 13602 csk6-ylw yk diode M022-E1-5B

ATtiny15L

Abstract: TRANSISTOR SUBSTITUTION pass transistor and thus greater power dissipation. Resolution and accuracy of the analog to digital , the control algorithm. Initially a P-channel MOSFET was selected for the pass transistor to avoid the , cycle to the P channel MOSFET transistor. Coefficients are constants based on the selected gain values , error by 2 Yk=(Ck/2-Ck1/2)+Yk1; // +/- 7FFF if(Yk0x00FE) Yk , J O U R N A L page 20 Ck1=Ck; Yk1=Yk; OCR1A=(char)Yk; PORTB&=0xEF; } // save error for
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ATtiny15L TRANSISTOR SUBSTITUTION 5 amp 48 volt battery charger
Abstract: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · ·  , crosstalk. The THAT 380G is a large-geometry, 8-transistor, monolithic NPN/PNP array intended for use in , , each transistor is electrically insulated from the others by a layer of insulating oxide (not the , produces a typical NPN Q4 C Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP , Q7 PNP 17C1 18B Q2 PNP Q2 C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK THAT
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350MH
Abstract: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · ·  , crosstalk. The THAT 380G is a large-geometry, 8-transistor, monolithic NPN/PNP array intended for use in , , each transistor is electrically insulated from the others by a layer of insulating oxide (not the , produces a typical NPN Q4 C Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP , Q7 PNP 17C1 18B Q2 PNP Q2 C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK THAT
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478 SOCKET PINOUT

Abstract: 2N3906 PNP bipolar junction transistor T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES , large-geometry monolithic NPN and/or PNP transistor arrays which combine low noise, high speed and excellent , . Fabricated on a Complementary Bipolar Dielectrically Isolated process, each transistor is electri- Part , Series Transistor Arrays SPECIFICATIONS 1 Maximum Ratings (T A = 25°C) Parameter Symbol , NPN Q6 NPN Q6 E Q5 B Q7 PNP Q8 PNP Q6 B 9 Q4 Q4 B GKH YK 10
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THAT300 478 SOCKET PINOUT 2N3906 PNP bipolar junction transistor pnp 8 transistor array PNP monolithic Transistor Arrays 2N3904 2N3904-

npn 8 transistor array

Abstract: "Microphone Preamplifiers" T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · · · · , large-geometry, 8-transistor, monolithic NPN/PNP array intended for use in multichip modules, hybrids, and , in a dielectrically isolated, complementary bipolar process, each transistor is electrically , Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP and SO packages with similar , C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK Q1 B Q1 E Q8 E Q5 E
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npn 8 transistor array THAT380G
Abstract: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) · Switching circuit. Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (Ri =10kU, R ^IO kfl) · Complement to KSR1202 TO-92S ABSOLUTE MAXIMUM RATINGS (TA < B 25`C) C haracteristic , 30 -0.3 200 5.5 -0.5 7 0.9 10 1 -3 13 1.1 yk V MHz pF V V CE= -5V, lc * -100M VC E = , TRANSISTOR DC CURRENT GAIN 1 3 5 10 30 50 100 300 500 10 00 (c(mA) C O L LE C -
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smd TRANSISTOR YK

Abstract: smd marking YK Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115 Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -6 V IC -1 A Collector current , MHz 25 pF 2% hFE Classification Marking YM YL YK hFE 135 270 200 400
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smd TRANSISTOR YK smd marking YK transistor yk TRANSISTOR SMD PNP 1A ic marking YK transistor marking YK
Abstract: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count , Marking Type name RN1110FT YK Type name RN1111FT YM 2 2002-01-24 RN2110FT Toshiba
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Abstract: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , Type name RN2710JE YK Type name RN2711JE YM 2 2002-01-24 RN2710JE,RN2711JE Toshiba
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RN1710JE 1711JE

transistor marking YK 6 pin

Abstract: RN1710JE RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , Type Name k Marking Type name RN2710JE YK Type name RN2711JE YM 2000-12-26
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transistor marking YK 6 pin 000707EAA1
Abstract: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , 6.11 13 V MHz pF kW Unit nA nA Type Name Marking Type name RN2910FE YK Type name Toshiba
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RN1910FE RN1911FE
Abstract: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , ¾ R1 RN2711JE kW Marking Type name RN2710JE YK Type name RN2711JE YM Toshiba
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transistor marking YK

Abstract: ic marking YK RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , Cob RN2910FE R1 RN2911FE Type Name k Marking Type name RN2910FE YK
Toshiba
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Abstract: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , MHz pF k Unit nA nA Type Name Marking Type name RN2910FE YK Type name RN2911FE Toshiba
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RN1110FT

Abstract: RN1111FT RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT, RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , RN2111FT Type Name k Marking Type name RN1110FT YK Type name RN1111FT YM
Toshiba
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Abstract: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count , ¾ R1 RN2111FT kW Marking Type name RN1110FT YK Type name RN1111FT YM 2 Toshiba
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fe5f-1mc6

Abstract: fe5f OPERATING MODE OPEN COLLECTOR OF NPN TRANSISTOR OPEN COLLECTOR OF PNP TRANSISTOR DARK-OPERATED , '90 ttlflCHK Tsutsui 2 26 '90 APPO Y.K. 3,2 '9Q BttQATE '0 25/î 3 RB SCALE EXCftl'Sf TOI
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50G110 fe5f-1mc6 fe5f transistor kt 922 1mf6 photo-electric switch 85XRH DC500V AC500V

RN2110FT

Abstract: transistor marking YK RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count , Type Name Marking Type name RN2110FT YK Type name RN2111FT YM 5 2004-03-01
Toshiba
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toshiba Transistor Silicon pct TOSHIBA Transistor Silicon PNP Epitaxial Type
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