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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor t09

Catalog Datasheet MFG & Type PDF Document Tags

2n189

Abstract: 2N1136b 2G224 _ _ 2G225 2G226 2G101-2N57 TRANSISTOR SUBSTITUTIONS _ SUB 2SB48 2SB49 2G109 2G324 2N324 , A _ - - TO 5 T05 T05 TO 5 TO 5 T09 -T05 T05 TO 5 TO 5 T05 TO 5 -TO 5 -TO 5 -T022 TO 5 T022 A TOIO TOIO TOIO 2N59-2N122C TRANSISTOR SUBSTITUTIONS ORIG 2N59 CASE TO 5 2N59A TO 5 2N59B TO 5 TO 5 , T022 T022 2N211 2N102/13 T013 T09 2N331 GA53270 T022 (Vc) 2N188 ( A , Pc) 2N192 (Pc) 2N217 2N324 2N362 , TO40 TOl C M C M C A M - - A M C TO 5 TO 5 T05 C TO40 TO40 TOl T05 TOl C TOl 3 TRANSISTOR
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2N526 2n189 2N1136b 2SA114 B1151 EQUIVALENT 2T312 2N420 2G101 2G102 2G103 2G220 2G221 2G222

A1383 transistor

Abstract: 2N907 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m â  80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m
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2N1508 A1383 transistor 2N907 2N907 PNP transistor t09 A1383 2SA474 BSW39 50M5A BSW40 MM2193A 2SA312 12-IB

transistor t09

Abstract: A1383 transistor 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m â  80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m
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2sc114 usaf516es047m usaf516es048m transistor 2SC114 replacement usaf517es060m 2sc107 BFY15 2N1444 100MS CP408 PT6905 100MI

NKT275

Abstract: MA117 2.8m #J 50 25u 22 35p AA T09 8 UST81 165m 2.8m #J 25 6.Ou 6.0 1.0m 90 At T09 9 UST722 165m 2.8m 20 6.Ou 6.0 1.0m 22 A T09 10 UST87 165m .50M 2.8m #J 25 6.Ou 38 35p AA T09 11 UST88 165m 1.0M 2.8m #J 25 6. Ou 80 35p AA T09 12 USTI 9 165m 1.5M 2.8m f J 25 6.Ou 80 35d AA T09 13# XC101 166m 3.3m 0J 35 1? 10u 5.0 8.Om0 66 96u 420 2.0 , TS601 200m #.J 12 9.0 § 5 0 400m 2Ou0 1.00 1Om0 37 T A T09 77 TS602 200m #J 12 9.0 § 5 0
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NKT275 MA117 2SB495 TS1000 AF107 MA890 2N4872 ST6120 MM2550 900MSA 1000M5 1000MSA

OC305

Abstract: 2sc180 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m â  80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m
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OC305 2sc180 102 TRANSISTOR 20p ASZ20 2. germanium 2N1524 SDT7762 SDT7763 SDT7764 35OP0 SDT7765 SDT7766

germanium transistor asy

Abstract: TK27A 5.0m 65 A A T01 39 # 0C3H 100m 3.0ma 1.7m #S 15 12 10 2.Ou0 6.0 1.0m 50 a 14d A T09 40# 0C4H 100m 3.oma 1.7m #S 15 12 10 2.Ou0 6.0 1.0m 80 A 14p A T09 41 # 2SB443B 100m 3.5M 1.7m 18 , # 0C3K 100 m 8.oma 1.7m #8 15 10 10 6.0 1.0m 50 a 14p A T09 55# 0C4K 100m 8.oma 1.7m #S 15 10 , 1 4p A T09 57# TK25A 100m 10.M 4.0m *J 20 20 4.50 1.0m 63 17p asa 58# TK34C 100m 10M , aa u1 61# 0c3n 100m 15.MA 1.7m #s 15 8.0 10 2.Ou0 6.0 1.0m 50 A 14p A T09 62# 0c4n 100m 15
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germanium transistor asy TK27A 2G417 TK27 0C71N A14P FV3299 200MSA NS949 200M5A NS950 S18000

2N1103

Abstract: CK26A 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m â  80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m
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2N1103 CK26A OC304 OC303 OC309-1 OC309-2 2N3602 2N3603 2N3604 USAF501ES001M JAN2N3789 JAN2N3790

MA117

Abstract: NKT275 2.8m #J 50 25u 22 35p AA T09 8 UST81 165m 2.8m #J 25 6.Ou 6.0 1.0m 90 At T09 9 UST722 165m 2.8m 20 6.Ou 6.0 1.0m 22 A T09 10 UST87 165m .50M 2.8m #J 25 6.Ou 38 35p AA T09 11 UST88 165m 1.0M 2.8m #J 25 6. Ou 80 35p AA T09 12 USTI 9 165m 1.5M 2.8m f J 25 6.Ou 80 35d AA T09 13# XC101 166m 3.3m 0J 35 1? 10u 5.0 8.Om0 66 96u 420 2.0 , TS601 200m #.J 12 9.0 § 5 0 400m 2Ou0 1.00 1Om0 37 T A T09 77 TS602 200m #J 12 9.0 § 5 0
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TS-601 NKT275A 2SA168 2sb102 2SA250 GET114 B170018 B170021 B170024

2N5735

Abstract: 2sc113 Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 , 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n 150m 6.0 0 1Om.0 75 # 60 2.5p 100n N-PE Si 150J , 80 15 2.5p P-D Ge 100S T09 109 2N2798 235MS 25n 20n 140n 30n 75m .30 0 1Om0 50 20 2.5p P-D Ge
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BSW89 BSX81 BSX81A 2N5735 2sc113 BSW12 SFT713 u34c 2N3400 2SC479H BSW10 200MIA ST30100 NS2100 200MS

SFT308

Abstract: SFT307 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025
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SFT308 SFT307 2N2625 2G302 2G395 2N2209 NS2101 BSW88 BSX81B 2N2797 235M5 2SC317H

SFT307

Abstract: usaf516es047m 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025
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2N2626 2N2624 FZJ 101 usaf516es047 2SA204 2SA283 PT6905A PT6905B PT6905C MM2261 MM2262 MM2263

transistor t09

Abstract: PDTC114EU Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES · , transistor in a SOT323 plastic package. PNP complement: PDTA114EU. MARKING TYPE NUMBER PDTC114EU 2 M G A893 - ! MARKING CODE t09 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector , transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). PDTC114EU , 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL j-a
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diode t85

Abstract: 2N7805 DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , area call TOLL FREE 800-526-4581 DIODE TRANSISTOR CO INC H? TRANSISTOR OUTLINES DE I 2040355 â , optional, 7. Tab centerline. T09 «" 1 a I ife4 os» MAX.1 Il SÛC " J 95rt NOTE. 1 .065 MIN , T09 NOTESs -IOC NOTE 3 1. Th« variation in actual diamattr within «ni» 20M mall not txcetd .010". , 800-526-4581 I . 2B48352 DIODE TRANSISTOR CO DIODE TRANSISTOR CO INC TNr. 21C 00095 orfSfl-ÃI ~57 ]>F1
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2N2144A 2N277 2N2152 2N1073 2N1100 2N2157 diode t85 2N7805 trf 510 transistor 32N03 transistor 45 f 122 2N58A 2N629 2N5436 2N143/13

t09 marking

Abstract: CHDTC114EUPT CHENMKO ENTERPRISE CO.,LTD CHDTC114EUPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High , 1.25±0.1 * One NPN transistors and bias of thin-film resistors in one package. MARKING * t09 0.8 , Thermal resistance - 140 O C/W RJ-S junction - soldering point Note 1. Transistor
Chenmko Enterprise
Original
t09 marking CHDTC114EU 100MH 100OC

BC138

Abstract: 2N4042 Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 , 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n 150m 6.0 0 1Om.0 75 # 60 2.5p 100n N-PE Si 150J , 80 15 2.5p P-D Ge 100S T09 109 2N2798 235MS 25n 20n 140n 30n 75m .30 0 1Om0 50 20 2.5p P-D Ge
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BC138 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 VCB0-30V ICBO-10 12H303 12H901 12H902 VCBO-25V

bc128 transistor

Abstract: BC128 9.0 G 9 2N1200 100m 4.3M0 769u SS 20 15 2.0 100m ,7Ou0 100 1.5m0 7.0 tA 3.5pEl t T09 10 , 20 15 2.0 100m ,7Ou0 100 1.5m0 7.0 tA 3.5pEl t T09 12 JAN2N1200 100m 25MSA 7.6m ss 20 14 0 1.0 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90
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bc128 transistor BC128 2SC401 transistor 2N221 MT4102 2s745 240MS

OC318

Abstract: 2sc113 400m 2Om0 80 t 42 t 500nb 27 3.5 11p D A A T09 T01 T05 73# 74# 75# 2SB377 2SB382 2SB383 270m 270m , 25u 3Ou0 1.00 5.0 1.00 2OOm0 10m 15Om0 30 tA 20 60 t 2.0k 20pp AA T09 T05 T05 A 82# 83# 84# AT 128 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90
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OC318 EM 18 2G271 2N1056 2G1024 2G319

SFT308

Abstract: TI365 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025
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TI365 SF.T307 usaf520es070 usaf521es071m usaf521es071 R107 NPC13-1B NPC14-1B USAF511ES036P USAF520ES070M 2N1509 50MSA

CK22A

Abstract: 2N700 PE0 R97c 5 2N2797t 75m 235M5 1.0m #S 40 20 2.5 100m .300 1Om0 80 1 2.5p D T09 6 2N2798à 75m 235M5 1.0m #S 60 25 ? 0 100m .300 1Om0 50 t 2.5o D T09 7# 2SA507 75m 250M§ 1.3m #J 20 18 0 .20 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90
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CK22A 2N700 TI401 2SA239 2SA229 2n1962

NS1000 n

Abstract: BC420 TK250A 500m 100MS $.1 40 20 6 0 250m 9.00 .O2m0 20 DA T09 82 TK251A 500m 100M5 S.l 40 20 6 0 250m 9.00 .O2m0 20 DA T09 83 2N5242t 500m 170MSA 5.0m ♦ s 20 20 5 0 500m .1 OuS 1.00 ,5Om0 , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 2N2800/51 120MIA 45n 1 5n 225n 45n 300m 10 0 1 , 200J TO 5 11 2N2942 150MSA 20n 15n 120n 25n 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12
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NS1000 n BC420 2CY38 ST8034 NS1000 usaf517es060
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