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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
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transistor smd marking 431

Catalog Datasheet MFG & Type PDF Document Tags

smd transistor 2T

Abstract: transistor smd code marking 431 M08A Z03A Transport Media NSC Drawing Note 1: The micro SMD package marking is a 1 digit manufacturing Date Code only micro SMD Top View Marking Example DS010055-56 www.national.com 2 , chip sized package (4-Bump micro SMD) using National's micro SMD package technology. The output voltage , voltage n Fast turn-on response n Low output noise n LM431 in micro SMD package n See AN-1112 for micro SMD considerations Connection Diagrams TO-92: Plastic Package SOT-23: 3-Lead Small Outline
National Semiconductor
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smd transistor 2T transistor smd code marking 431 transistor 431 smd transistor smd marking 431 K TRANSISTOR SMD MARKING CODE 2t transistor smd marking 431 DS010055-28 DS010055-1 DS010055-54 DS010055-2 DS010055 LM431CCZ/

marking code AE SMD Transistor

Abstract: smd transistor 2T package marking is a 1 digit manufacturing Date Code only micro SMD Top View Marking Example , chip sized package (4-Bump micro SMD) using National's micro SMD package technology. The output voltage , voltage n Fast turn-on response n Low output noise n LM431 in micro SMD package Connection Diagrams TO-92: Plastic Package SOT-23: 3-Lead Small Outline DS010055-28 DS010055-1 Top View 4-Bump micro SMD Top , Information Package TO-92 Typical Accuracy Order Number/Package Marking 0.5% LM431CCZ/ LM431CCZ LM431CIZ
National Semiconductor
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marking code AE SMD Transistor n1f smd national marking code 8 soic 431 TRANSISTOR smd n1f sot23 transistor SMD 2t LM431CIZ/ LM431CCM/ 431CCM LM431CIM/ 431CIM LM431CCM3/

transistor smd ba rn

Abstract: LM7805 smd 8 pin View Marking Example DS010055-56 The LM431 micro SMD Package will be marked with a two digit date , operation. It is now available in a chip sized pack age (4-Bump micro SMD) using National's micro SMD pack , Programmable output voltage Fast turn-on response Low output noise LM431 in micro SMD package Connection , View 4-Bump micro SMD SO-8: 8-Pin Surface Mount CATHODE - ANODEANODE - NC - - REFERENCE -A N , Accuracy Order Number/Package Marking 0.5% LM431CCZ LM431CCZ LM431CIZ LM431CIZ SO-8 LM431CCM LM431CCM
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transistor smd ba rn LM7805 smd 8 pin LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac LM431CIM LM431CIM3 MA03B BPA04XXX MO-211 BPA04AFA

transistor 431 smd

Abstract: transistor smd marking 431 Top View 4-Bump micro SMD Top View (bump side down) Note: *NC micro SMD , Note 1 exists. wg 50ppm/ micro SMD micro SMD AN-1112 LM431 3 micro SMD 2 2.5V (VREF) 36V LM 431 LM431 20001116 1 DS010055-15-JP © National Semiconductor Corporation 2005 3 LM431 Note 1: micro SMD 1 micro SMD Top View
National Semiconductor
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SMD transistor Marking X1 SMD TRANSISTOR A1 SOT23 smd transistor A1 sot-23 transistor smd marking BA sot-23 SMD Transistor A1 transistor smd marking BA LM431A MF03A MO-211VARIATION BPA04AFB

SG3081

Abstract: uA701 marked as listed in MIL-HDBK-103 (see 6.6 herein). For packages where marking of the entire SMD PIN , , NPN TRANSISTOR ARRAY, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-01-13 REVISION LEVEL A , function SG3081 High current NPN transistor array 01 1.2.2 Case outline(s). The case outline(s , ) . 20 mA Power dissipation (PD): Any one transistor , to +125°C _ 1/ Voltage and current ratings applies to each transistor in the array. 2/ Derate
DEPARTMENT OF DEFENSE
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uA701 sg3081j TRANSISTOR SMD MARKING CODE 97 qml-38535 6 pin TRANSISTOR SMD CODE PA SMD TRANSISTOR MARKING code DD 5962-E454-02 MIL-STD-883 MIL-PRF-38535 QML-38535 5962-8866401EA SG3081J/883B

qml-38535

Abstract: -103 (see 6.6 herein). For packages where marking of the entire SMD PIN number is not feasible due to space , ://www.dscc.dla.mil MICROCIRCUIT, LINEAR, POWER TRANSISTOR MONOLITHIC SILICON AMSC N/A REVISION LEVEL A , transistor 1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows , , 3 All All 2 -50 5 V PA 5 1.8 1.8 mA 1, 2, 3 1 1 All All All Ps 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN
DEPARTMENT OF DEFENSE
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5962-E178-01 LM195 5962-8777801XA LM195H/883 UC195H/883B LM195K/883
Abstract: addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN , U4637. Make changes to 1.2.2, 3.3, 4.2, 4.3.1, 4.3.2. Editorial changes throughout. Make changes to , . Output current (each transistor): Device type 01 , . Output current range (each transistor): Device type 01 , . The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in Microsemi
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5962-R145-95 5962-8764501EA SG1524BJ/883B U3158 IP1524BJ-DESC UC1524AJ/883B

2N7503

Abstract: 2N7503U8 manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be , RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 , , radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product , Physical dimensions. See figure 1, surface mount SMD-0.2, for U8 (metal lid) and U8C (ceramic lid). 1.3 , -19500/743A * FIGURE 1. Physical dimensions for SMD-0.2, 2N7503U8 and 2N7503U8C. 3 MIL-PRF-19500/743A
International Rectifier
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2N7503 MIL-PRF-19500/743 MIL-PRF-19500 IRHNM57110 IRHNMC57110 MIL-PRF-19500/741

2n7508

Abstract: transistor smd marking 431 DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS This , , enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, SMD-0.5, TO-276AA (U3). 1.3 Maximum , . Physical dimensions for SMD-0.5 TO-276AA (2N7508U3). 3 MIL-PRF-19500/751 3. REQUIREMENTS 3.1 , figures 1, SMD-0.5 (TO-276AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance
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IRF5NJ6215 2n7508

2n7507

Abstract: BL 15 SMD DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This , , enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, SMD-0.5, TO-276AA (U3). 1.3 Maximum , . Physical dimensions for SMD-0.5, TO-276AA (2N7507U3). 3 MIL-PRF-19500/750 3. REQUIREMENTS 3.1 , figure 1, SMD-0.5 (TO-276AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance
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IRF5NJ3315 2n7507 BL 15 SMD

2N7506U8

Abstract: 2n7506 -19500/749A 16 July 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR , and single event effects (SEE), power transistor. Two levels of product assurance are provided for , , surface mount SMD-0.2, for U8 (metal lid) and U8C (ceramic lid). 1.3 Maximum ratings. TA = +25°C, unless , SMD-0.2, 2N7506U8 and 2N7506U8C. 3 U8 only U8C only MIL-PRF-19500/749B 3. REQUIREMENTS , -19500, and on figure 1 (SMD-0.2, U8 and U8C) herein. 3.4.1 Lead finish. Lead finish shall be solderable in
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IRHNM597110 IRHNMC597110 2n7506 smd transistor marking B5 transistor 3e5 smd SMD-02 4d SMD Transistor SMD02 MIL-PRF-19500/749A

2n7481u3

Abstract: 2N7479U3 RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3 , , radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product , , TO-276AA (SMD-0.5) for U3. * 1.3 Maximum ratings. TA = +25°C, unless otherwise specified. Type , . FIGURE 1. Physical dimensions for TO-276AA (SMD-0.5), U3. 3 MIL-PRF-19500/703B 3. REQUIREMENTS , -19500, and on figure 1 (TO-276AA, SMD-0.5, U3) herein. 3.4.1 Lead finish. Lead finish shall be solderable in
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2N7480U3 2n7481u3 2n7479 2n7481 2N7480 SMD05 MIL-PRF-19500/703A 2N7481U3 IRHNJ57Z30 IRHNJ57034 IRHNJ57130

2N7503U8

Abstract: 743b diode HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND , (total dose and single event effects (SEE), power transistor. Two levels of product assurance are , dimensions. See figure 1, surface mount SMD-0.2, for U8 (metal lid) and U8C (ceramic lid). 1.3 Maximum , . * FIGURE 1. Physical dimensions for SMD-0.2, 2N7503U8 and 2N7503U8C. 3 U8 only U8C only MIL-PRF , in MIL-PRF-19500, and on figure 1 (SMD-0.2, U8 and U8C) herein. 3.4.1 Lead finish. Lead finish
International Rectifier
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743b diode 743B MIL-PRF-19500/743B

smd transistor 712

Abstract: S913T Features D D D D D Improved cross modulation at gain reduction D High AGC-range D SMD package , 4 4 94 9279 S913T Marking: 913 Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 2 3 94 9278 S913TR Marking: 13 R Plastic case (SOT 143R) 1 = Source; 2 = Drain , ! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL , 5.74 5.55 5.36 5.17 4.98 4.84 4.68 4.52 4.31 4.14 3.96 3.90 3.80 3.67 3.55 S22 ANG
Temic Semiconductors
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smd transistor 712 S913T/S913TR 88/540/EEC 91/690/EEC D-74025

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 -103 (see 6.6 herein). For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. 3.6 Certificate of , Standard Microcircuit Drawings (SMD's). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise , Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the , =12V, RXA=1kn, Rtb = 1 kn, Cj = 0.1 mF. see figures 4 and 6 9,10,11 05 178 250 Discharge transistor
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TLC555MJGB TLC555MFKB 5962-8950303GC 5962-8950303PA 5962-8950304CA SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-R053-94 5962-E119-98 5962-8950302CA TLC556MJB

MIL-PRF-19500/246

Abstract: 2n7609 DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL , , MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of , .5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for SMD-0.2, 2N7609U8 and , physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (SMD-0.2, U8 and U8C) herein , be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the
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2N7609U8C IRHLNM77110 IRHLNMC77110 MIL-PRF-19500/246 2n7609 smd transistor marking u8c MIL-PRF-19500/758

*2N2920* LCC

Abstract: soc2920ahrb 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data , Hi-Rel NPN dual matched bipolar transistor Linear gain characteristics ESCC qualified European preferred , epitaxial NPN transistor in TO-77 and LCC-6 packages. It is specifically designed for aerospace Hi-Rel , -77 TO-77 LCC-6 LCC-6 Lead finish Gold Solder Dip Gold Gold Gold Solder Dip Marking 520700203 520700206 , 1. One section. 2. Both sections. Table 4. Symbol RthJA Thermal data for SMD package
STMicroelectronics
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soc2920ahrb 2N2920AT1 SOC2920A SOC2920AHRB

smd 2xY

Abstract: SMD marking codes Hall sensors . 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.2.1. 4.2.2. 4.3. 4.3.1. 4.3.2. 4.4. 5. Title Introduction Family Overview Features Marking Code Operating Junction Temperature Range Solderability and , comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the , transistor is switched on or off. In addition the HAL22y sensors features a power-on and undervoltage reset , supply voltage is 4.3 V. The HAL 2xy family is available in the SMD package SOT89B-3 and in the leaded
Micronas
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HAL220 smd 2xY SMD marking codes Hall sensors DSH000141 004EN AI000 001EN HAL206

smd transistor TO4

Abstract: telefunken ha 750 m modulation at gain reduction â'¢ High AGC-range â'¢ SMD package 1 2 _Q | I IT 13 654 4 3 S913TRW Marking: W13 Plastic case (SOT 343R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute Maximum , feasible. Using open collector switching transistor (inside of PLL), insert 10 kfì collector resistor. 2 , -0.74 -24.8 950 -2.24 -64.2 4.52 84.5 -41.55 98.3 -0.79 -25.9 1000 -2.38 -67.1 4.31 80.3 -41.01 104.4
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smd transistor TO4 telefunken ha 750 m w13 smd transistor smd transistor TO4 13 w13 SMD sot 23 SMD TRANSISTOR MARKING 259 800MH

2N7486U3

Abstract: 2N7486 , FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON , (total dose and single event effects (SEE), power transistor. Two levels of product assurance are , dimensions. See figure 1, (surface mount, TO-276AA, SMD-0.5). 1.3 Maximum ratings. TA = +25°C, unless , (TO-276AA, SMD-0.5). 3 B M MIL-PRF-19500/704B w/AMENDMENT 1 3. REQUIREMENTS 3.1 General , figure 1 (TO-276AA, SMD-0.5) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance
DEPARTMENT OF DEFENSE
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2N7485U3 2N7486U3 2N7487U3 IRHNJ57133SE IRHNJ57230SE IRHNJ57234SE 2N7486 2N7485 2N7487
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