NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: FBCC FCC FET FSK FSM Frame BCC Federal Communications Commission Field Effect Transistor , Semiconductor - Field Effect Transistor Multipage Transponder Most Significant Bit Millisecond PC PTT , Signal Sensitivity level S2000 S2CON SAMPT SAMPTS S/W Series 2000 Reader System S2000/S2500 , Instruments Registration and Identification System TIRIS Reader Manager Transistor Transistor Logic ... | Original |
10 pages, |
134,2 kHz coil antenna 134.2 kHz RFID TIRIS 2000 liquid level indicator instruments tiris s2000 magnetic transmitter 134.2 S2510 transistor s2000 tiris tiris rfid S2510 abstract |
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| Abstract: an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz DU28200M DU28200M v2.00 Features P&-4 I N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband , W, F=175 MHz VSWR-T - lo:1 - V-,=28.0 V. I,=1000 mA. P,s200.0 W, F=175 MHz , Transistor, 2OOW, 28V DU28200M DU28200M v2.00 Typical Broadband Performance Curves EFFICIENCY GAIN vs , : Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 2OOW, 28V ... | Original |
3 pages, |
equivalent transistor s2000 DU28200M transistor s2000 datasheet abstract |
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| Abstract: -109212 Transistor 3 Q901,Q903, Q905 TFR= FR= 5.20430 [ 0.05% ] FR= 1.73477 CF= 1.00000 T= 50.00C , ) -FBNL281 -FBNL281 Transistor 1 Q404 TFR= FR= 0.920163 [ 0.01% ] FR= 0.920163 CF= 1.00000 T= 47.00C S=10.00% , PartNumber PartType FBNL282 FBNL282 Transistor PIFY=2.1 Qty 1 RefDes Q440 TFR= FR= 1.65455 , ) -FBNL427 -FBNL427 Transistor 4 Q400,Q401,Q402,Q403 TFR= 37.5370 [ 0.37% ] FR= 9.38426 CF= 1.00000 T= 48.00C , ) -SFBN000046 -SFBN000046 Transistor 1 Q107 TFR= FR= 1.06394 [ 0.01% ] FR= 1.06394 CF= 1.00000 T= 50.00C S=10.00% ... | Original |
63 pages, |
TRANSISTOR D405 transistor q406 q406 q404 transistor LZSA1000 TFR 600 74352 r927 130001 power transistor R446 mtbf D408 J406 Q903 TRANSISTOR Q414 datasheet abstract |
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| Abstract: -FBNL281 -FBNL281 Transistor 1 Q404 TFR= FR= 0.920163 [ 0.01% ] FR= 0.920163 CF= 1.00000 T= 47.00C S=10.00% , ) -FBNL282 -FBNL282 Transistor 1 Q440 TFR= FR= 1.65455 [ 0.02% ] FR= 1.65455 CF= 1.00000 T= 54.00C S=10.00% , ) -FBNL427 -FBNL427 Transistor 4 Q400,Q401,Q402,Q403 TFR= 37.5370 [ 0.50% ] FR= 9.38426 CF= 1.00000 T= 48.00C , , Case 3 PartNumber PartType SFBN000046 SFBN000046 Transistor PIFY=2.2 Qty 1 RefDes Q107 , ) -SFBN000046 -SFBN000046 Transistor 3 Q108,Q110,Q111 TFR= FR= 2.75641 [ 0.04% ] FR= 0.918803 CF= 1.00000 T= 50.00C ... | Original |
62 pages, |
C495 transistor J406 FBT-00 fbnl FBL-00 TRANSISTOR D412 D409 D408 74352 r927 Q413 fet D412 q406 transistor D413 Si 6823 datasheet abstract |
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| Abstract: 2SC5149 2sd2499 msd601 KMZ43 bu4508dz BF820 ITT kmz51 compass S0817MH (small signal) · GA low V (BISS) transistors · GA low noise transistor · GA medium frequency ... | Original |
185 pages, |
bta12-600b application BTA16-600b application motor control 12v 200W AUDIO AMPLIFIER npn smd s1a TYN612 pin diagram TRANSISTOR S1A 64 smd 1n4007 smd, toshiba BYQ30EB-200 TYN604 scr pin diagram BC548 TRANSISTOR REPLACEMENT datasheet abstract |
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| Abstract: TTL-like totem-pole. The High driver is an n-channel pull-up transistor, pulling to a voltage one transistor threshold below Vcc. Alternatively, the outputs can be globally configured as CMOS drivers, with , pull-up resistor is a p-channel transistor that pulls to Vcc. The configurable pull-down resistor is an n-channel transistor that pulls to Ground. The value of these resistors is typically 20 k - 100 k (See , M M 0 1 0 F4 1 3 M 1 F3 M 0 M C IN M S2000_01 Figure ... | Original |
68 pages, |
XCS40XL TRANSISTOR sd 346 XC4000 XCS05 XCS05XL XCS10 XCS10XL XCS20 XCS20XL XCS30 XCS30XL XCS40 S6699 datasheet abstract |
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| Abstract: TTL-like totem-pole. The High driver is an n-channel pull-up transistor, pulling to a voltage one transistor threshold below Vcc. Alternatively, the outputs can be globally configured as CMOS drivers, with , pull-up resistor is a p-channel transistor that pulls to Vcc. The configurable pull-down resistor is an n-channel transistor that pulls to Ground. The value of these resistors is typically 20 k - 100 k (See , M M 0 1 0 F4 1 3 M 1 F3 M 0 M C IN M S2000_01 Figure ... | Original |
68 pages, |
XCS40XL display 16x2 XC4000 XCS05 xcs05xl XCS10 XCS10XL XCS20 XCS20XL XCS30 XCS30XL XCS40 17S30 toko rcl 409 datasheet abstract |
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| Abstract: structure is configured as a TTL-like totem-pole. The High driver is an n-channel pull-up transistor, pulling to a voltage one transistor threshold below Vcc. Alternatively, the outputs can be globally , consumption and reduce noise sensitivity. The configurable pull-up resistor is a p-channel transistor that pulls to Vcc. The configurable pull-down resistor is an n-channel transistor that pulls to Ground. The ... | Original |
57 pages, |
XCS30XL P117 RCL TOKO data rip u4 transistor be p88 transistor s2000 XCS05 xcs05xl XCS10 XCS10 vq100 XCS10XL XCS20 XCS20XL XCS30 datasheet abstract |
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| Abstract: pull-up transistor, pulling to a voltage one transistor threshold below V CC. Alternatively, the outputs , sensitivity. The configurable pull-up resistor is a p-channel transistor that pulls to VCC. The configurable pull-down resistor is an n-channel transistor that pulls to Ground. The value of these resistors is , F3 M 0 M C IN M S2000_01 Figure 17: Detail of Spartan/XL Dedicated Carry Logic ... | Original |
66 pages, |
XCS20 TQ144 XC4000 XCS05 XCS05XL XCS10 XCS10XL XCS20 XCS20XL XCS30 XCS30XL XCS40 datasheet abstract |
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| Abstract: structure is configured as a TTL-like totem-pole. The High driver is an n-channel pull-up transistor, pulling to a voltage one transistor threshold below Vcc. Alternatively, the outputs can be globally , consumption and reduce noise sensitivity. The configurable pull-up resistor is a p-channel transistor that pulls to Vcc. The configurable pull-down resistor is an n-channel transistor that pulls to Ground. The ... | Original |
60 pages, |
XCS05 XCS05-3PC84C XCS05-4PC84C XCS10-3PC84C XCS10-4PC84C XCS20 pin diagram XCS20-3PQ208C XCS20-4PQ208C XCS30-3PQ208C XCS30-4PQ208C XCS40-3PQ208C XCS40-4PQ208C datasheet abstract |
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| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI Document Format Size Document Number Date Update Pages Portable Document Format 4342 02/09/1997 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4342-v3.htm |
STMicroelectronics | 20/10/2000 | 2.73 Kb | HTM | 4342-v3.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI Document Format Size Document Number Date Update Pages Portable Document Format 4342 02/09/1997 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4342-v4.htm |
STMicroelectronics | 25/05/2000 | 2.69 Kb | HTM | 4342-v4.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 4342 Date Update: 02/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4342-v1.htm |
STMicroelectronics | 31/03/1999 | 0.9 Kb | HTM | 4342-v1.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 4342 Date Update: 02/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4342-v2.htm |
STMicroelectronics | 14/06/1999 | 0.87 Kb | HTM | 4342-v2.htm |
| SGS-THOMSON | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 4342 Date Update: 02/09/97 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/4342.htm |
STMicroelectronics | 06/02/1998 | 0.92 Kb | HTM | 4342.htm |
| Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI Document Format /09/1997 6 Raw Text Format S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI * Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % Safe Operating Area. Thermal Impedance S2000AFI 1) Collector Emitter Saturation Voltage Switching Time Inductive Load S2000AFI 3/6 Figure 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4342.htm |
STMicroelectronics | 20/10/2000 | 7.03 Kb | HTM | 4342.htm |
| Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI Document 02/09/1997 6 Raw Text Format S2000AFI HIGH VOLTAGE FAST The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high Operating Area. Thermal Impedance S2000AFI 2/6 DC Current Gain Base Emitter Saturation Voltage Inductive Load S2000AFI 3/6 Figure 1: Inductive Load Switching Test Circuit. S2000AFI 4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4342-v3.htm |
STMicroelectronics | 25/05/2000 | 6.74 Kb | HTM | 4342-v3.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI HIGH VOLTAGE FAST Format S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n ST PREFERRED SALESTYPE n HIGH The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high figure 1) Collector Emitter Saturation Voltage Switching Time Inductive Load S2000AFI 3/6 Figure 1: Inductive Load Switching Test Circuit. S2000AFI 4/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4342-v2.htm |
STMicroelectronics | 14/06/1999 | 4.77 Kb | HTM | 4342-v2.htm |
| ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR S2000AFI HIGH VOLTAGE FAST Format S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n ST PREFERRED SALESTYPE n HIGH The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high figure 1) Collector Emitter Saturation Voltage Switching Time Inductive Load S2000AFI 3/6 Figure 1: Inductive Load Switching Test Circuit. S2000AFI 4/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4342-v1.htm |
STMicroelectronics | 02/04/1999 | 4.81 Kb | HTM | 4342-v1.htm |
| SILICON NPN POWER DARLINGTON TRANSISTOR S2000AFI HIGH VOLTAGE FAST ST | Power Bipolar Transistors Discrete Devices Transistors Power Bipolar Transistors Part Number Datasheet Description 2N3055 2N3055 2N3055 2N3055 MJ2955 MJ2955 MJ2955 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS 2N3439 2N3439 2N3439 2N3439 2N3440 2N3440 2N3440 2N3440 SILICON NPN TRANSISTORS 2N3771 2N3771 2N3771 2N3771 2N3772 2N3772 2N3772 2N3772 HIGH POWER NPN SILICON TRANSISTOR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/189-v1.htm |
STMicroelectronics | 02/02/2001 | 235.34 Kb | HTM | 189-v1.htm |