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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor rf type M 2530

Catalog Datasheet MFG & Type PDF Document Tags

transistor rf type M 2530

Abstract: TRANSISTOR 2sA107 referring to the Japanese-English translation key given below. m m m m (Ta~25'o â'¢ « / Vf « : â'¢ (ta^zs'c}:-'. n s « a « m m m a Vas vm> le Pc B fa»®*« '« 4 t z. k, U* m hr. w» «p. im* (m fa fr* (Me) e» B) m n m m (mA) , - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all
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j22332

Abstract: michael hiebel fundamentals of vector analysis Noise RF Transistor in 2.4 ­ 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 , about Infineon RF Transistors may be found at www.infineon.com/RF Direct link to RF Transistor , 9.1nH J1 RF INPUT C1 33pF C5 2.2pF L2 Q1 4.3nH BFP740F SiGe:C Transistor J2 C3 , Manufacturer BFP740F SiGe:C Low Noise RF Transistor, TSFP-4 package Infineon Technologies RF Edge , BFP740F 2.4 ­ 2.5 GHz LNA with < 1µSec Turn-On / Turn-Off Time 1 BFP740F SiGe:C Ultra Low Noise RF
Infineon Technologies
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j22332 michael hiebel fundamentals of vector analysis 740F-080930 BFP620 applications note Digital Oscilloscope Preamplifier AN17-1 BFP620 AN171

NT 6865

Abstract: - Audio - Low power off mode (9 A; 2.5V LDO on) Supply Voltage Generation - - 1 RF Programmable Low Noise LDOs (400mA) 1 RF Programmable Low Noise LDOs (150mA) 2 Programmable Digital Low Power , Thermal Protection with internal temperature sensor 0.35 m CMOS Solution al id The AS3654 is a , ) .46 7.11.1 RF LDO's (VRF_1 - VRF , : Stpup2_fb selects the type of feedback for the DCDC_step_up2 converter: DCDC_CURR1, DCDC_CURR2 or DCDC_FB2
austriamicrosystems AG
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NT 6865 CABGA100

CABGA100

Abstract: car battery charger Amplifier Line/ Headphone output with GND separation Supply Voltage Generation - - 1 RF Programmable Low Noise LDOs (400mA) 1 RF Programmable Low Noise LDOs (150mA) 2 Programmable Digital Low Power , ) .46 7.11.1 RF LDO's (VRF_1 - VRF , for 0.15 sense resistor 1 ON-resistance of external switching transistor 50 mA at , DCDC_FB1. For step up DCDC 2 following feedback selections are possible: Stpup2_fb selects the type of
austriamicrosystems AG
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car battery charger BSS84

transistor C4

Abstract: BFR740L3RH Noise RF Transistor in 2.4 ­ 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 , about Infineon RF Transistors may be found at www.infineon.com/RF Direct link to RF Transistor , RF Transistor in 2.4 ­ 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 µSec , INPUT L2 Q1 4.7nH BFR740L3RH SiGe:C Transistor C4 33pF C5 5.6pF J2 C3 2.7pF RF , Manufacturer BFR740L3RH SiGe:C Low Noise RF Transistor, TSLP-3-9 Reduced Height, `Green', Halogen Free
Infineon Technologies
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transistor C4 BFP620 spice LQP10A MTA-100 8473B IC147 AN173

INA02170

Abstract: transistor rf type M 2530 Introduction The INA series amplifiers are part of Hewlett-Packard's product line of silicon bipolar RF Integrated Circuits built with HP's ISOlated Self Aligned Transistor (ISOSATTM) process. These devices are 50 , first two digits following the hyphen designate die type. The third digit is reserved for performance selections. The last two digits designate package type. The INA products covered in this note are: INA , design utilizes a two stage cascade consisting in general of a single input transistor driving a
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INA02170 transistor rf type M 2530 signal path designer INA-02 INA-03 INA-01 INA-03170 INA-10386 AN-S011

JDV2S31CT

Abstract: 2SK1875 transistor S-Mini 2SC2712 S-Mini 2SK711 USM 2SK1875 SMV HN3G01J RF Amp J-FET , 2009-9 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j , mW 10 mW (Average) 10 mW (Average) (Class 4) 200 kHz (Class 3/4) (Portable Type) (Portable Type) 100 mW (Peak) 250 mW (Peak) 384 kbps 32/64/128 kbps / 1.25 MHz (1.25 , Tuning RF Amp Tuning Mixer IF Amp OSC Tuning S-Mini Single AGC
Toshiba
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JDV2S31CT 1SV283B 1SV271 antenna CDMA GPRS 2SK3078 2sk3476 CST16 BCJ0003F BCJ0003E

Murata 455KHz discriminator

Abstract: input resistance op amp amplifiers · FM detector · Quaternary LPF operational amplifier · FSK comparator · Regulator outputfor RF , operational amplifier 2 (AMP2) is connected. -3 - m Ô3Ô23Ô3 0013520 SONY CXA1650N Pin No , Output pin for internal constant-voltage source amplifier. Connect the base of PNP transistor. (Current , 0.35 Vtlbsv VlN (U M ) Measurement circuit 3 17 24 Design Data Item IF limiter Input , The detector is of quadrature type. To perform phase shift, connect RLC resonator circuit or ceramic
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Murata 455KHz discriminator input resistance op amp CXA1850N A3A23A3
Abstract: RF amplifier and first mixer â'¢ Reduced voltage detection circuit Tstg -6 5 t o +150 Vcc , '" fl3 6 2 3 6 3 0020253 £13 S O N Y Pin No. Symbol C X A 1484A M -N Pin voltage , base of PNP transistor. (Current capacity: 100,uA) VB_REGOUT GNO _ 72 @ â'" W -Controls , type crystal oscillator circuit. b) Directly input a local oscillation signal to Pin 1. Fiom Locai Signal Fig. 1 3) Mixer The mixer is of double-balance type. Pin 20 is the input pin. Input -
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CXA1484AM CXA1484AM/N CXA1484AN CXA1494AM/N 002D2 CXA1484AW

2n3904 smd pin configuration

Abstract: 560 K. 561 k SMD H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications , Withstand Test Voltage · High Radiation Immunity · 6N135, 6N136, HCPL-2530/ -2531, Function , transistor collectors Truth Table (Positive Logic) Input On (H) Off (L) Output L H Functional , transistor base node connected to improve common mode noise immunity and ESD susceptibility. In addition , Coefficient Resistance (Input-Output) Capacitance (Input-Output) Transistor DC Current Gain Small Signal
Hewlett-Packard
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HCPL-553X HCPL-653X HCPL-655X HCPL-550X 2n3904 smd pin configuration 560 K. 561 k SMD 653K HCPL-5501 hp 1002 6 pin TRANSISTOR SMD CODE PA MIL-PRF-38534 QML-38534

CXA1850N

Abstract: CXA1850 RF amplifier and first mixer â'¢ Power-save function â'¢ Reduced voltage detection circuit SONY , - -gnd Output pin for internal constant-voltage source amplifier. Connect the base of PNP transistor , '"4â'" m S3flB3fl3 0013521 Ã"BT B SONY CXA185CN Electrical Characteristics (vcc=v5v, Ta=25"C, Fs , 10 5.0 M LVA output saturation voltage vsatlva Measurement circuit 8 0.4 V Detector output , ¡13555 475 â  SONY CXA1B5ÃN 5) Detector The detector is of quadrature type. To perform phase shift, connect
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VSOP-16P-L01 CXA1850 for Operational Amplifier wv1 transistor SONY 171 quadrature detector A3023 SSOP016-P-0225-S

2n3904 smd pin configuration

Abstract: HCPL-5501 RF 1 k Q3 0.01 µF Q2 100 0.01 µF VO (1 M, 12 pF TEST INPUT) VB 100 51 , Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55 , Withstand Test Voltage · High Radiation Immunity · 6N135, 6N136, HCPL-2530/ -2531, Function , photodiodes and output transistor collectors VCC VB VO GND The connection of a 0.1 µ F bypass , couplers. These products are also available with the transistor base node connected to improve common
Agilent Technologies
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HCPL-257K MARKING SMD IC CODE 8-pin 2N3904 TRANSISTOR SMD 4N55 HCPL-2530 transistor SMD 2n3904 HCPL-2530/ LM307 HCPL-5530 MIL-PRF38534 5966-4874E

HP 2531

Abstract: HP 2531 optocoupler RF 1 k Q3 0.01 µF Q2 100 0.01 µF VO (1 M, 12 pF TEST INPUT) VB 100 51 , Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55 , Withstand Test Voltage · High Radiation Immunity · 6N135, 6N136, HCPL-2530/ -2531, Function , transistor collectors Truth Table (Positive Logic) Input On (H) Off (L) Output L H Functional , conventional phototransistor couplers. These products are also available with the transistor base node
Hewlett-Packard
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HP 2531 HP 2531 optocoupler HP RF TRANSISTOR GUIDE TRANSISTOR SMD MARKING CODE pa gold detectors circuit optocoupler HP 5965-3002E

CXA1484AN

Abstract: a1484a for RF amplifier and first mixer â'¢ Reduced voltage detection circuit CXA1484AM 20 pin SOP (Plastic , constanl-voltage source amplifier. Connect the base of PNP transistor. (Current capacity: 100,uA) 17 BSV â , type crystal oscillator circuit. b) Directly input a local oscillation signal to Pin 1. Vcc C , is of doubie-baSance type. Pin 20 is the input pin. Input through a suitable matching circuit. The , type. To perform phase shift, connect RLC resonator circuit or ceramic discriminator to Pin 8. The
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a1484a CDBM455 A1484 352303 sony A1484AM/N CXA1484 50P020-P-0300-A V50P-20F- 5S0P020-P-0225-

5043

Abstract: HP 2530 optocoupler RF D.U.T. VCC VO VB 15 k +12 V 1.2 k 9.1 k Q2 100 470 Q3 0.01 µF 0.01 µF VO (1 M, 12 pF TEST , Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical , High Radiation Immunity · 6N135, 6N136, HCPL-2530/ -2531, Function Compatibility · Reliability Data , detector. Separate connections for the photodiodes and output transistor collectors Truth Table , transistor base node connected to improve common mode noise immunity and ESD susceptibility. In addition
Hewlett-Packard
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5043 HP 2530 optocoupler optocoupler hcpl

4G base station power amplifier

Abstract: ulm 2003 implementation of a class-J mode RF power amplifier is described. The experimental results indicate the class-J , transistor device was used in this investigation, together with a combination of high power waveform , better compromise between power and efficiency tradeoffs over a substantial RF bandwidth. Index , for wireless communication has, until recently, been focused on specified RF bandwidths of 5% or , , other RF power amplifier (RFPA) applications, such as radar and environmental climate monitoring (ECM
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4G base station power amplifier ulm 2003 Amplifier Research rf power amplifier schematic Conference Paper Reprint broad-band Microwave Class-C Transistor Amplifiers GaN Bias 25 watt

Funkamateur

Abstract: Nordmende Transistor cross section 3 C E 2 Philips RF Manual 7th Edition ­ Appendix 1 bra439 bra438 , : Philips RF Manual 7th Edition ­ Appendix bra440 Existing advanced bipolar transistor Applications , Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order , . . . . . . . . . . . . . . . . . .23 3. RF Application-Basics . . . . . . . . . . . . . . . . . . , 3.3 Transistor semiconductor process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Philips Semiconductors
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BFG480W Funkamateur Nordmende Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 PMBFJ620 BFC505 K73232

Sony Semiconductor Replacement Handbook 1991

Abstract: 2sc5088 horizontal transistors Polysilicon 3.6.3 RF Bipolar Transistor & MMIC Performance overview 3.1 Frequency spectrum As , Microwave Band S C J H X M K KU KA product & design manual for RF small signal discretes , RF Manual product & design manual for RF small signal discretes Page: 12 3.6 Transistor , attachment to the lead frame. Existing advanced bipolar transistor Advantages of double-poly-Si RF , Transistor & MMIC Performance overview Page: 14 3rd edition RF Manual product & design manual
Philips Semiconductors
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Sony Semiconductor Replacement Handbook 1991 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook BB202 BF1107/8 BGA6589

TRANSISTOR SMD MARKING CODE 1 KW

Abstract: 2n3904 smd pin configuration 1.2 k 15 k RF 1k Q3 0.01 µF Q2 100 0.01 µF VO (1 M , 12 pF TEST INPUT , Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55 , Voltage Level Shifting · 6N135, 6N136, HCPL-2530/2531, · Analog Signal Ground Isolation (see , integrated photon detector. Separate connections for the photodiodes and output transistor collectors , phototransistor couplers. These products are also available with the transistor base node not connected to
Avago Technologies
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TRANSISTOR SMD MARKING CODE 1 KW marking code ya SMD Transistor TRANSISTOR SMD MARKING CODE smd ya transistor marking code ff p SMD Transistor smd tr yc HCPL-2530/2531 5989-1659EN

transistor 2N3053

Abstract: HCPL553X Sealed, Transistor Output Optocouplers for Analog and Digital Applications Data Sheet *See matrix for , Radiation Immunity 6N135, 6N136, HCPL-2530/2531, Function Compatibility Reliability Data Applications , detector. Separate connections for the photodiodes and output transistor collectors improve the speed up to , with the transistor base node not connected to improve common mode noise immunity and ESD , Diode Temperature Coefficient Resistance (Input-Output) Capacitance (Input-Output) Transistor DC Current
Avago Technologies
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transistor 2N3053 HCPL553X lm307 0206 AV02-3618EN
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