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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

transistor r3n

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SAMSUNG SEMICONDUCTOR KSR2114 INC ' mE p J î^tyma 00073,3g i | pNP EPiTÃ"XIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching circuit, Inverter, Interface circuit Driver circuit â'¢ Built in bias Resistor(R, = 4.7Kn, R,=47KU) â'¢ Complement to KSR1114 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) r-3n- /3 SOT-23 Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -50 V Collector-Emitter Voltage VcEO -50 V Emitter-Base Voltage Vebo -10 V Collector -
OCR Scan
marking KD SOT23
Abstract: aking de vice design easy. ·S tru ctu re PNP digital transistor (Built-in resistor type) ·E xte rn a l , Equivalent circuit ROHM : SPT EIAJ : SC-72 Q 'sJll0 r-^3_n (1) (2) 0 ) I ,.+ 0 .1 5 (1) GND (2 , = 100MHz * Transition frequency of mounted transistor ·P a cka g in g specifications Package Package -
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free transistor equivalent book free all transistor equivalent book DTB143EK/DTB143EC/DTB143ES TB143E SC-59 DTB143EC DTB143ES 96-304-B143E
Abstract: will be controlled by R-in, R2n> and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and the trip point becomes controlled by only R-| ^ and R2N. a , the ICL7665S with an NPN transistor. The voltage at the top of R-| is determined by the Vbe of the transistor and the position of R ^s wiper arm. This voltage has a negative temperature coefficient. R j is adjusted so that Vg£T2 equals 1.3V when the NPN transistor's temperature reaches the temperature selected -
OCR Scan
L7665 ICL7665B ICL7665SA
Abstract: DTC143EU/DTC143EK/DTC143ES/DTC143EF DTC143EL/DTC143EA/DTC143EV /T ra n s is to rs DTC143EU/DTC143EK/DTC143ES DTC143EF/DTC143EL/DTC143EA DTC143E V ?->'SAh7> v 7*$ (fSStrtBE^7>vx?) 7 ^-/Transistor Switch Digital Transistors (Includes Resistors) â'¢ 7i-® 7l">i[l/D im ensions (U n it: mm) â'¢ 1) -f T7 X ffl c o m t £ ft, A I t j f L T t ' 5 fc S t4' #0S)O U «J£L, U T , > y X ^ / T ransistors INPUT VOLTAGE: V mon) (V) â'¢ 1Isi(r3!N 4 tt£ i/E le c tric a l -
OCR Scan
Abstract: input voltage rises from a low value, the trip point will be controlled by R1n, R2n. and R3n, until the trip point is reached. As this value is passed, the detector changes state, R3n is shorted out, and , uses the ICL7665S with an NPN transistor. The voltage at the top of R, is determined by the VBE of the transistor and the position of R,'s wiper arm. This voltage has a negative temperature coefficient. R, is , 16.7ms to charge C, 1,3V. 1 TEMPERATURE SENSOR (GENERAL PURPOSE NPN TRANSISTOR) 470kQ R3 -
OCR Scan
ICL7665B/D
Abstract: point will be controlied by Rìm, R2n. and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3n ¡s shorted out, and the trip point becomes controlied by only R1N and , ICL7665S with an NPN transistor. The voltage at the top of R, is determined by the VBE of the transistor , longer than 16.7ms to charge Ct 1.3V. TEMPERATURE SENSOR (GENERAL PURPOSE NPN TRANSISTOR) R1 LOW -
OCR Scan
TS02D ICL7665SCJA icl7665sipa 43D2271
Abstract: rises from a low value, the trip point will be controlied by R-|n, R2N> ancl R3N> unti' the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and the trip , ICL7665S with an NPN transistor. The voltage at the top of R-| is determined by the Vg^ of the transistor , NPN TRANSISTOR) HIGH TEMPERATURE LIMIT ADJUST ALARM SIGNAL FOR DRIVING LEDS, BELLS, ETC. FIGURE 16 -
OCR Scan
TS01D ICL7665SCBA ICL7665SCPA ICL7665SACBA ICL7665SACPA ICL7665SIBA ICL7665SAIBA
Abstract: low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and the trip point becomes , illustrates a simple high/low temperature alarm which uses the ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's wiper arm. This , transistor's temperature reaches the temperature selected for the high temperature alarm. When this occurs Intersil
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free voltage regulator 7805 ICL7665SACBAZ ICL7665SACBAZ-T MS-001-BA r21b IC 7805 pin diagram FN3182 ISO9000
Abstract: controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and the trip point becomes controlled by only R1N and R2N, a lower , transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's , when the NPN transistor's temperature reaches the temperature selected for the high temperature alarm. When this occurs, OUT2 goes low. R2 is adjusted so that VSET1 equals 1.3V when the NPN transistor Intersil
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7805 5V REGULATOR IC
Abstract: input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and , simple high/low temperature alarm which uses the ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's wiper arm. This voltage , transistor's temperature reaches the temperature selected for the high temperature alarm. When this occurs Harris Semiconductor
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ICL7665SIJA 7805 voltage regulator IC function ICL7665SACJA IC 7805 5V 7805 voltage regulator IC 7805 pinout 110VAC
Abstract: , the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and the trip point becomes controlled by , alarm which uses the ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's wiper arm. This voltage has a negative temperature coefficient. R1 is adjusted so that VSET2 equals 1.3V when the NPN transistor's temperature reaches the Intersil
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7805 5V voltage regulator ICL7665SAIPA ICL7665SAIPAS2426 ICL7665SAITV ICL7665SCBA-T ICL7665SCBA-TS2490 ICL7665SCBAS2204
Abstract: if the input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted , ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor , adjusted so that VSET2 equals 1.3V when the NPN transistor's temperature reaches the temperature selected , 1.3V when the NPN transistor's temperature reaches the temperature selected for the low temperature Intersil
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7805 n-p-n transistor right ICL7665 TRANSISTOR h2f
Abstract: input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and , illustrates a simple high/low temperature alarm which uses the ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's wiper arm. This , transistor's temperature reaches the temperature selected for the high temperature alarm. When this occurs Intersil
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ic 7805 battery back up circuit datasheet REGULATOR IC 7805 Datasheet of ic 7805 datasheet ic 7805 7805 regulator 5V
Abstract: input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted out, and , simple high/low temperature alarm which uses the ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor and the position of R1's wiper arm. This voltage , transistor's temperature reaches the temperature selected for the high temperature alarm. When this occurs Harris Semiconductor
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h2f regulator regulator 7805 5v MA 7805 uA 7805
Abstract: if the input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted , ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor , adjusted so that VSET2 equals 1.3V when the NPN transistor's temperature reaches the temperature selected , 1.3V when the NPN transistor's temperature reaches the temperature selected for the low temperature Intersil
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TRANSISTOR 7805 NA 7805 ICL7665SACBAZA 7805 ic free
Abstract: (V) Coil Type Coil resistance at 20 °C in Ω R3N-2013-23-1012-WT 12 DC 160 R3N-2013-23-1012-WTL 12 DC R3N-2013-23-1024-WT 24 DC R3N-2013-23-1024-WTL 24 R3N-2013-23-1110-WT 110 R3N-2013-23-1110-WTL R3N-2013-23-5024-WT Options* WT WTL x x x x x x x x x x x , 26.4 Options* WT WTL R3N-2013-23-5024-WTL 24 AC 50/60Hz 158.0 19.2 120 AC 50/60Hz 3770 96.0 132.0 R3N-2013-23-5120-WTL 120 AC 50/60Hz 3770 96.0 230 AC Altech
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410-112013-5M UL508 TS35/
Abstract: if the input voltage rises from a low value, the trip point will be controlled by R1N, R2N, and R3N, until the trip point is reached. As this value is passed, the detector changes state, R3N is shorted , ICL7665S with an NPN transistor. The voltage at the top of R1 is determined by the VBE of the transistor , adjusted so that VSET2 equals 1.3V when the NPN transistor's temperature reaches the temperature selected , 1.3V when the NPN transistor's temperature reaches the temperature selected for the low temperature Altech
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Abstract: HS_GND TPWR R15N R15P R2P 12 13 R2N 15 R3N 16 R4P 17 R4N 10 9 14 , TRANSISTOR COUNT: 8382 MOS and 87 BiPOLAR PROCESS: BiCMOS SUBSTRATE CONNECTED TO GROUND THERMAL Intersil
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7665s 7665SACPA 7665scpa 7805 to 92 7805 SOIC 7665scpaz
Abstract: HS_GND 9 8 7 12 11 10 6 5 4 3 2 R2P R2N R3P R3N R4P R4N R5P R5N R6P R6N R7P , Information TRANSISTOR COUNT: 8114 CMOS and 87 Bipolar PROCESS: BiCMOS SUBSTRATE CONNECTED TO GROUND Maxim Integrated Products
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DS2125 spi2r20b 1302-D 1365-D
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