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Part Manufacturer Description Datasheet BUY
POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
MPS48-EP300 GE Critical Power MPS48 DC Power System visit GE Critical Power
MPS48-3R<00 GE Critical Power MPS48 DC Power System visit GE Critical Power
GCP841A_0I6R_USB_S Controller (150043558) GE Critical Power Global Power System Galaxy Pulsar Edge Controller visit GE Critical Power

transistor power

Catalog Datasheet MFG & Type PDF Document Tags

Q2N4401

Abstract: D1N3940 (Analog) Noise Reduction Processor Operational Amplifier Opto-Isolator Oscillator Power Amplifier Pin Diode Pressure Sensor Power Bipolar Transistor Power Driver (Analog) Power MOSFET Radio System Rectifier , jump to its page Actuator Amplifier/Equilizer Mulitplier (Analog) Attenuator Average Power Supply Model Bipolar Transistor Bridge Driver Buffer (Analog) Connector Magnetic Core Current Regulator Diode Quartz , Bipolar Transistor Instrument Amplifier Isolation Amplifier Junction Field-Effect Transistor Level
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varicap diodes

Abstract: BIPOLAR TRANSISTOR Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 Silicon P Channel MOSFET Silicon , Silicon NPN Bipolar Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 Silicon P , Transistor Silicon NPN Bipolar Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 , Transistor Power Management Switches 2SJ244 2SJ246L/S Silicon P Channel MOSFET Silicon P Channel MOSFET , Transistor Power Management Switches 2SJ244 2SJ246L/S Silicon P Channel MOSFET Silicon P Channel MOSFET
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HWCB613 varicap diodes BIPOLAR TRANSISTOR hitachi SAW Filter p channel mosfet dual gate mosfet in vhf amplifier gsm module with microcontroller PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A

nf 0036 diode

Abstract: CM1000HA-28H HIGH PERFORMANCE H-SERIES IGBTMODTM TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c , Test Conditions *C Amperes V GE Volts Watts nF nF nF Single IGBTMODTM Transistor Power , 24.0 35.0 40.0 Dual IGBTMODTM Transistor Power Modules CM50DY-28H CM75DY-28H CM200DY-28H CM300DY , Six-IGBTMODTM Transistor Power Modules CM50TF-28H CM75TF-28H CM100TF-28H 1400 1400 1400 50 75 100 100 150 200 , 1700 VOLT HIGH PERFORMANCE H-SERIES IGBTMODTM TRANSISTOR POWER MODULES Single IGBTMODTM Transistor
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CM1000HA-28H nf 0036 diode CM1200HA-34H cm50dy-28 Diode 15630 CM300HA-28H CM400HA-28H CM600HA-28H CM800HA-28H CM300DY-28H

Low frequency power transistor

Abstract: high frequency diode : radiation sensitive DIODE: radiation generating THYRISTOR: low power TRANSISTOR: low power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE: multiplier, e.g., varactor, step recovery DIODE , : variable capacitance TRANSISTOR: low power, audio frequency TRANSISTOR: power, audio frequency DIODE: tunnel TRANSISTOR: low power, high frequency DIODE: oscillator and miscellaneous DIODE: magnetic sensitive HALL EFFECT DEVICE: in an open magnetic circuit TRANSISTOR: power, high frequency The serial
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Low frequency power transistor high frequency diode transistor A 1013 diode nomenclature 9999 DIODE

IS621K30

Abstract: IS626040 ) Sin gle IGBTM ODTM Transistor Power Modules 1S621K20 200 1000 IS621220 200 1200 IS626030 300 600 , IS621260* 600 1200 Dual IGBTM ODTM Transistor Power Modules ID2260A2 25 600 ID221KA2 25 1000 ID2212A2 25 , ID126040 400 600 Six-IGBTM ODTM Transistor Power Modules IEF260A1 15 600 IEF21KA1 15 1000 IEF212A1 15 1200 , Volts - Cits pt Cmi pt l=1mHZ Cm pi Sin gle IGBTMOD TM Transistor Power Modules IS621K20 , - Dual IGBTMOD"" Transistor Power Modules ID2260A2 ID221KA2 ID2212A2 ID226005 ID221K05 ID221205
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IS621K30 IS626040 ID121215 ID126030 IEF260A2 ID2260A IS621230 IS621K40 IS621240 IS621K60

transistor XM

Abstract: transistor ) 0.4 typ. 0.4 typ. Output Power - Field-Effect Transistor (MESFET) Power Transistor i , Transistor Power Transistor Power Transistor Power Transistor Application GSM, DCS, DECT, PHS, PDC, PCS , Microwave Components Microwave Components Field-Effect Transistor (MESFET) Low Noise Transistor r i cd (2 ) m (3l '~'B < % XMFS2-M1 ( 1) -m l m (4) Pm (1 , XMFS2-M1 XMFS3-M1 Type Low Noise Transistor Low Noise Transistor Application GPS Receiver, DBS Tuner
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transistor XM transistor k 30 transistor power transistor TRANSISTOR P 3 transistor mesfet

tunnel diode high frequency

Abstract: transistor use in oscillator : variable capacitance C TRANSISTOR: low power, audio frequency D TRANSISTOR: power, audio frequency E DIODE: tunnel F TRANSISTOR: low power, high frequency G DIODE: oscillator and miscellaneous H DIODE: magnetic sensitive K HALL EFFECT DEVICE: in an open magnetic circuit L TRANSISTOR: power , : radiation sensitive Q DIODE: radiation generating R THYRISTOR: low power S TRANSISTOR: low power, switching T THYRISTOR: power U TRANSISTOR: power, switching X DIODE: multiplier, e.g. varactor, step
Vishay Semiconductors
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tunnel diode high frequency transistor use in oscillator diode tunnel oscillator tunnel diode DATASHEET TUNNEL DIODE photo thyristor

9999 DIODE

Abstract: Low frequency power transistor THYRISTOR: low power TRANSISTOR: low power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE , L DIODE: detection, switching or mixer DIODE: variable capacitance TRANSISTOR: low power, audio frequency TRANSISTOR: power, audio frequency DIODE: tunnel TRANSISTOR: low power, high frequency DIODE , TRANSISTOR: power, high frequency The serial number consists of: · · A four digit number from 100 to 9999
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step recovery diode

600HU

Abstract: transistor nf 37 HIGH PERFORMANCE U-SERIES IG BTM O D TM TRANSISTOR POWER MODULES Major R atings and Characteristics at , 12.0 7.8 18.0 Dual IGBTM O D TM Transistor Power Modules CM 50DU -24H CM 75DU -12H CM 75DU -24H CM , -Pack IGBTM O D TM Transistor Power Modules CM 75BU -12H C M 100BU-12H 600 600 75 100 150 200 310 400 2500 2500 75 100 15 15 2.4 2.4 3.0 3.0 6.6 8.8 3.6 4.8 1.0 1.3 Six-Pack IG BTM O D TM Transistor Power , 1.0 2.2 1.3 3.0 2.0 2.6 Chopper IG BTM O D TM Transistor Power Modules C M 50E3U -24H C M 75E3U
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600HU 100DU-12H transistor nf 37 150DU12H GE 047 TRANSISTOR 400HU 100DU-24H 150DU-12H 150DU-24H

Low frequency power transistor

Abstract: transistor 99 THYRISTOR: low power C GALLIUM -ARSENIDE S TRANSISTOR: low power, switching (Materials with a bandgap > 1.3 eVI 11 T THYRISTOR: power R COM POUND MATERIALS (For instance Cadmium-Sulphidel U TRANSISTOR: power , voltage regulator, B DIODE: variable capacitance transient suppressor diode C TRANSISTOR: low power, audio frequency The serial number consists of: D TRANSISTOR: power, audio frequency · Three figures, running from , . X. etc.) and two figures, running from F TRANSISTOR: low power, high frequency 10 to 99. for devices
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transistor 99 transistor power audio bandgap

transistor

Abstract: POWER MOS FET 2sj 2sk Small Signal Transistor Power Transistor Transistor for Array Bipolar Transistor MOS,FET Transistor , -80 Type Transistor MP-10 Type Transistor Mini-Mold Transistor Power Mini-Mold Transistor MP-2 Type , (Quick Reference by Function/Application) Power Transistor Low VCE(sat) Transistor High hFE Transistor , Effect Transistor(Power MOS FET) Low Voltage N Channel N6-L Series Product Map Product List High , Product Map Product List Power MOS FET Array Monolithic Product Map Product List Power Transistor
NEC
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POWER MOS FET 2sj 2sk transistor 2sk n channel fet array 2SK type transistor mp40 high hfe transistor X13769XJ2V0CD00 MP-25 MP-40 MP-45 MP-45F MP-80

diode RU 3AM

Abstract: diode RU 4B Index by Part No. Part No. Classification Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor MOS FET Hall-Effect IC (Unipolar Switch) Hall-Effect , -pin) Power transistor Power transistor Power transistor Power transistor Page Part No , ) Fast-Recovery Rectifier Diode (Axial) Fast-Recovery Rectifier Diode (Axial) Power transistor Array (Surface
Sanken Electric
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diode RU 3AM diode RU 4B RG-2A Diode FMM-32 diode RU 4AM MN638S

400HA-12E

Abstract: CM100TF-12e TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c=25°C (Tj Maximum =150°C) M AXIM U M , pt Single IGBTMODTM Transistor Power Modules CM 200HA-24E CM 300HA-12E CM 300HA-24E CM 400HA-12E , - - - - - 2.5 2.5 - - - - Dual IGBTMODTM Transistor Power Modules C M , - - - - - - - - - - - - - - - - - - - Six-IGBTMODTM Transistor Power Modules CM 15TF-12E CM 15TF-24E CM 25TF-12E CM 25TF-24E CM 50TF-12E CM 50TF-24E CM 75TF-12E
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CM100TF-12e DDG37SS BP107 600HA-12E 50DY-24E 75DY-12E 75DY-24E

CM150DY-24H

Abstract: cm1000ha-24h 600 & 1200 VOLT HIGH PERFORMANCE H-SERIES 1GBTMODTM TRANSISTOR POWER MODULES Major Ratings and , Amperes Watts Isolation Volts Volts Volts nf nf Single IGBTMODTM Transistor Power , 70.0 8.0 6.0 12.0 8.0 16.0 12.0 24.0 36.0 40.0 40.0 Dual IGBTMODTM Transistor Power Modules CM50DY , 14.0 10.5 21.0 14.0 1.0 2.0 1.5 3.0 2.0 4.0 3.0 6.0 4.0 8.0 6.0 12.0 8.0 Six-IGBTMODTM Transistor Power Modules CM15TF-12H CM15TF-24H CM20TF-12H CM20TF-24H CM30TF-12H CM30TF-24H CM50TF-12H CM50TF
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CM50DY-12H CM100DY-12H CM150DY-24H cm1000ha-24h CM600HA-24 CM600 CM200HA-24H CM300HA-12H CM300HA-24H CM400HA-12H CM400HA-24H CM600HA-12H

cm100dy-28

Abstract: cm50dy-28 POUIEREX INC b4E D VSTMbZl DGDtSS? 13 0 m P R X m ßfiE R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 1400 VOLT SERIES IGBTMODTM TRANSISTOR POWER MODULES , Transistor Power Modules CM200HA-28 CM300HA-28 CM400HA-28* CM600HA-28 1400 1400 1400 1400 200 300 400 600 , 5 5 5 66 88 - 17 22 - 17 2.2 - 132 34 3.4 Dual IGBTMODTM Transistor Power
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cm100dy-28 CM100DY-28

Low frequency power transistor

Abstract: high frequency diode magnetic circuit PHOTO COUPLER DIODE: radiation sensitive DIODE: radiation generating THYRISTOR: low power TRANSISTOR: low power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE: multiplier, e.g , , switching, mixer DIODE: variable capacitance TRANSISTOR: low power, audio frequency TRANSISTOR: power, audio frequency DIODE: tunnel TRANSISTOR: low power, high frequency DIODE: oscillator, miscellaneous DIODE: magnetic sensitive HALL EFFECT DEVICE: in an open magnetic circuit TRANSISTOR: power, high frequency The
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TLHR5401AS12
Abstract: Photocoupler Unit: mm 4.5 MAX. 1.3 0.15 +0.10 â'"0.05 7.0±0.3 4.4 1. Anode 2. Cathode 3. Emitter 4. Collector 2.0 0.1±0.1 2.3 MAX. 0.5±0.3 2.54 1.2 MAX. 0.4 +0.10 â'"0.05 4 3 1 2 Photocoupler DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 80 60 40 20 0 25 50 75 Ambient Temperature TA (˚C Kexin
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Abstract: ; with special third letter, see Section 1.3 W First letter LETTER Transistor; low power , types by Rthy-c) ^ 15 K/W. Table 3 Second letter A B Transistor; low power, high frequency , â'˜Gâ'™ or â'˜Qâ'™ (1> Transistor; power, audio frequency F For emitters and receivers in , Transistor; low power, audio frequency D For triacs, after second letter â'˜Râ'™ or T F Diode , '™ For opto-triacs after second letter â'˜Râ'™ R Transistor; power, high frequency N M O -
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BYX38-600

Abstract: germanium rectifier diode . L. N. P. Q. R. S. T. U. X. Y. Z. DIODE; signal, low power DIODE; variable capacitance TRANSISTOR; low power, audio frequency (Rth j-mb ^ ^ K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency (Rth j-mb > 15 K/W) MULTIPLE OF DISSIMILAR DEVICES - MISCELLANEOUS; e.g. oscillator DIODE; magnetic sensitive TRANSISTOR; power, high frequency (Rth j-mb ^ 15 K/W , diode (LED) CONTROL AND SWITCHING DEVICE; e.g. thyristor, low power (Rt h j-mb > 15 K/W) TRANSISTOR; low
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BYX38-600 BYX38 germanium rectifier diode germanium varactor diode BZY93-C7V5 BZY93

350DU-5F

Abstract: m m ìe x Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRENCH G ATE IGBTMODTM TRANSISTOR POWER MODULES 250 Volt IGBTMODTM Transistor Power Modules Major Ratings and Characteristics at Tc = 25=C (T, Maximum = 150C) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS IGBT Inverter Sector Test Conditions Amperes V ge Volts Typ. V CES (S AT) Dynamic Max. V CES(SAT) V RMS V CES V rf = OV, V qe = 10V, I = 1 mHz " oes nf "re s Type Volts ·c Amperes '
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350DU-5F 450HA-5F 600HA-5F
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