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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor on 4436

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transistor on 4436

Abstract: IGBT Transistor 1200V, 25A Switching Loss 3778 4436 td(on) Turn - on delay time tr Rise time td(off) Turn - off , PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE(on) Non Punch Through (NPT) Technology · Low Diode , Recovery Characteristics · Positive VCE(on) Temperature Coefficient · Extended Lead TO-247AD Package · Lead-Free VCES = 1200V VCE(on) typ. = 2.28V G VGE = 15V, IC = 25A, 25°C E N-channel
International Rectifier
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IRGP30B120KD-E transistor on 4436 IGBT Transistor 1200V, 25A 035H diode Marking code WT

k 3918 TRANSISTOR

Abstract: transistor on 4409 . Built on a thinfilm substrate, this amplifier is specially designed for high reverse isolation , Characteristics1 105°C/W 0jc 150 mW Active Transistor Power Dissipation Junction Temperature Above Case , -10.89 -6.77 -3.26 -.10 19.18 29.85 37.55 44.00 48.35 50.85 52.23 52.20 50.34 44.36 34.09
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k 3918 TRANSISTOR transistor on 4409 5963-2459E 4M47S

k 3918 TRANSISTOR

Abstract: transistor on 4409 immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier is specially designed , Characteristics' 105°CAV Active Transistor Power Dissipation 150 mW Junction Tem perature Above Case Temperature , 50.85 52.23 52.20 50.34 44.36 34.09 20.41 4.18 -13.89 ^ 9 .5 3 -80.67 -106.33 -127.86 -145.40 -159.50 K
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transistor k 3918 Avantek amplifier AVANTEK transistor Avantek amp UTC--21

EC3H09B

Abstract: IT04819 Ordering number : ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications · [EC3H09B] 0.35 0.2 0.15 0.15 0.05 1 2 , =1MHz GHz GHz 0.95 pF 0.7 Marking : J 1.2 0.9 pF Continued on next page. Any and , 2200 0.518 -175.49 1.789 54.03 0.198 44.36 0.260 -110.18 2400 0.507 , 0.179 -106.11 3000 0.408 170.38 1.725 44.36 0.256 51.77 0.173 -106.92
SANYO Electric
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IT04819 7308 IC E-CSP1006

transistor on 4436

Abstract: c 4235 transistor npn Ordering number : ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications 0.15 0.15 0.05 1 2 0.25 0.4 0.65 , Capacitance Cre VCB=1V, f=1MHz 0.7 0.9 pF Marking : J GHz GHz Continued on next page , 44.02 0.266 -108.83 2200 0.518 -175.49 1.789 54.03 0.198 44.36 0.260 , 1.725 44.36 0.256 51.77 0.173 -106.92 S21 31.509 S21 138.07 S12 0.025 S12
SANYO Electric
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c 4235 transistor npn MARKING 17305

GaAs FET HEMT Chips

Abstract: on 5295 transistor MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT DESCRIPTION The MGFC4453A low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band amplifiers. OUTLINE , -150.9 -155.6 -160.2 -164.6 Magn. 5.458 5.424 5.369 5.295 5.204 5.098 4.980 4.852 4.718 4.578 4.436 4.292 , characteristics a. DC characteristics on spec .sheet show the test conditions and values using w efer -prober.DC , hen more then 80% of the samples satisfy the value o f RF characteristics on spec.sheet,that w afer is
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GaAs FET HEMT Chips on 5295 transistor InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet

Avantek utc 573

Abstract: transistor on 4409 on a thin-film substrate, this ELECTRICAL SPECIFICATIONS amplifier is specially designed for , '¢ . . . * . . . . . . . . . Active Transistor , 19.18 29.85 37.55 44.00 48.35 50.85 52.23 52.20 60.34 -44.36 34.09 20.41 4.18 -13.89
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Avantek utc 573 T-74-Q

transistor on 4409

Abstract: A1357 transistor stabilization and increased immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier , Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105 , 52.23 52.20 50.34 44.36 34.09 20.41 4.18 â'"13.89 â'"49.53 â'"80.67 â'"106.33 â'"127.86 â , Blank = No Screening R = R-Series Screening For more information on R-Series screening, see , consists of a SMA Female connector on both the input and output (see note). Note: R-Series screening
Agilent Technologies
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A1357 transistor 500MH 5963-3240E

A1712

Abstract: transistor on 4409 immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier is specially designed , Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105°C/W 150 mW 16 , 52.23 52.20 50.34 44.36 34.09 20.41 4.18 â'"13.89 â'"49.53 â'"80.67 â'"106.33 â'"127.86 â , Blank = No Screening R = R-Series Screening For more information on R-Series screening, see , consists of a SMA Female connector on both the input and output (see note). Note: R-Series screening
Teledyne Cougar
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A1712 a1712 transistor

transistor on 4409

Abstract: k 3918 TRANSISTOR temperature stabilization and increased immunity to bias voltage variations. Built on a thinfilm substrate , Thermal Characteristics1 JC Active Transistor Power Dissipation Junction Temperature Above Case , 44.36 34.09 20.41 4.18 ­13.89 ­49.53 ­80.67 ­106.33 ­127.86 ­145.40 ­159.50 165.64 151.16 133.10 , For more information on R-Series screening, see Reliability Screening, Pub. 5963-3240E. Model , available is the -1. The -1 option consists of a SMA Female connector on both the input and output (see note
Teledyne Cougar
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c 4977 transistor

Abstract: transistor on 4436 ,4 Typical on wafer measurements : Main Features Gain & NF ( dB ) ¦ Broadband performances , made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer , Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer Sij measurements ) Bias , -46.59 -45.05 -44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 -44.58 , Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb = +25°C Noise figure versus drain
United Monolithic Semiconductors
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c 4977 transistor CHA2095 36-40GH DSCHA20958147 99F/00

transistor on 4436

Abstract: c 4977 transistor lithography. It is available in chip form. Vd Vd In Out Vg 1,2 Vg 3,4 Typical on wafer , current used for on wafer measurements, with adjusting Vg1,2 voltage for optimum noise figure and Vg3,4 , without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer , -55.77 -57.30 -56.20 -49.77 -49.70 -51.44 -47.38 -46.89 -47.95 -46.59 -45.05 -44.36 -42.19 , Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb = +25°C Noise figure versus drain
United Monolithic Semiconductors
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c 4977 transistor

Abstract: lithography. It is available in chip form. Vd Vd In Out Vg 1,2 Vg 3,4 Typical on wafer , . (2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2 voltage , Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Freq. GHz 2 4 6 8 10 12 14 , -47.95 -46.59 -45.05 -44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb =
United Monolithic Semiconductors
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c 5929 transistor

Abstract: transistor c 5299 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 , package. Each transistor is independently mounted and easily config ured for either dual transistor or , . Emitter Transistor 1 Collector Transistor 2 Em itterTransistor2 Base Transistor 2 Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (Ta , 51.37 47.57 44.36 MAG 0.032 0.062 0.108 0.136 0.150 0.157 0.157 0.155 0.150 0.146 0.140 0.136 0.133
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UPA802T c 5929 transistor transistor c 5299 Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor UPA802T-T1
Abstract: ,4 Typical on wafer measurements Gain & NF ( dB ) Main Features Broadband performances , made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer , 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters (On wafer Sij measurements) Bias , -49.70 -51.44 -47.38 -46.89 -47.95 -46.59 -45.05 -44.36 -42.19 -41.27 -40.37 -39.92 -40.59 , CHA2095a Typical on Wafer Measurements Tamb = +25° C Noise figure versus drain current 60, 85, 100mA United Monolithic Semiconductors
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DSCHA20958147-27 CHA209

13001 TRANSISTOR 217

Abstract: 2012-101N manufactured using advanced Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology , directly connected together to the ground plane on the PCB. The ground connection also serves as a heatsink. DC bias is applied to this pin through a RF choke. A bypass capacitor (1.0 micro farad) on the DC , a DC blocking capacitor on the output with similar requirements as the input side. 3 RFout Inches , 129.587 126.494 123.538 120.517 118.928 MAG[S21] 9.059 6.157 5.245 4.852 4.628 4.436 4.254 4.069 3.917
EiC
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13001 TRANSISTOR 217 2012-101N DATA IC HBT 01-01 60-000346-000B 13001 bipolar transistor ECJ1VF1A105Z ECG012 SS-000323-000 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000
Abstract: ,4 Typical on wafer measurements Gain & NF ( dB ) Main Features 1 Broadband performances 1 , for on wafer measurements, with adjusting Vg1, 2 voltage for optimum noise figure and Vg3,4 adjusting , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters (On , -45.05 -44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 -44.58 -41.46 , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb = United Monolithic Semiconductors
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8 pin 4435 ic voltage out and in

Abstract: Regulated Power Supply variable Schematic Diagram include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard , -4 4-436 Rev A11 020607 RF2377 Evaluation Board Layout (W-CDMA) Board Size 2.0" x 2.0" Board
RF Micro Devices
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RF2377-410 RF2377-411 8 pin 4435 ic voltage out and in Regulated Power Supply variable Schematic Diagram 4435 power ic fc515 ATT 47

4435m

Abstract: 4431 mosfet and lower RoS(on) capabilities. This advanced high-cell density HDTMOS power FET is designed to , Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and v DS(on) Specified at Elevated , ) MTB50P03HDL M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on , the information presented. SOA Limit curves - representing boundaries on device characteristics - are , use and best overall value. REV 1 4-430 Motorola TMOS Power MOSFET Transistor Device Data
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4435m 4431 mosfet

transistor s11 s12 s21 s22

Abstract: 741 LEM NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS , silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low , 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1
Renesas Electronics
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transistor s11 s12 s21 s22 741 LEM c 3420 transistor hfe 4538 transistor j50 transistor zo 607
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