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Part Manufacturer Description Datasheet BUY
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

transistor npn 4-071

Catalog Datasheet MFG & Type PDF Document Tags

transistor npn 4-071

Abstract: ic or 4071 datasheet BUY24 SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043 , Underside View PAD 2 ­ Emitter PAD 3 ­ Collector The BUY24 is a silicon planar epitaxial NPN transistor in a TO-3 (TO-204AA) metal case. It is suitable for switching applications up to 5A. ABSOLUTE
Semelab
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transistor npn 4-071 ic or 4071 datasheet 4-071 transistor transistor 4-071 IC 4071 ic or 4071

transistor npn 4-071

Abstract: 4071 ic chip MICROWAVE POWER TRANSISTOR NPN SILICON · · · · · CASE 376B, STYLE 1 MAXIMUM RATINGS R a tin g C o , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Long Pulse Power Transistor Designed for 960-1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode-S transmitters. · Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Hermetically Sealed
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4071 ic chip MRF10031

transistor npn 4-071

Abstract: transistor 336 cms G E SOLI» STATE Optoelectronic Specifications. ~oi DF|BÃ7SDÃ1 GDITÃIE 1 | -j-V/-^ Light Detector Planar Silicon Photo Transistor BPW36, BPW37 The GE Solid State BPW36 and BPW37 are highly sensitive NPN Planar Silicon Phototransistors. They are housed in a TO-18 style hermetically sealed package with lens cap. These devices are ideal for use in optoelectronic sensing applications where both high sensitivity and fast switching speeds are important parameters. Generally only the
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CQX14 transistor 336 cms BPW3 GE solid state

transistor npn 4-071

Abstract: CA3081 PRODUCTS Linear Selection Guide TRANSISTOR ARRAYS PART NUMBER CA3046 (NOTE 7) AnswerFAX^ DOC# 341 , CA3081 NPN - 7, Common emitter 120MHz 3.25 85 20mA 480 CA3082 NPN - 7, Common , 481 CA3086 N PN-5, Diff Amp + 3 550MHz 3.25 100 3mA 483 CA3096 NPN - 3, PNP , 662 CA3146 NPN - 5, Diff Pair + 3 500MHz 3.2 100 1mA 532 CA3183 N P N -5 , p+3 NPN - 3, PNP - 2 8GHz 8GHz, 5.5GHz 8GHz 2.5 2.5 70 70/40 10mA 10mA 3076 3076
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TRANSISTOR FOR 10GHz oscillator SIN16 CA3146 NPN mosfet selection guide CFB600 Power MOSFET Selection Guide HI5710A HI5746 HI5703 HI5766 HI5800 HI5804

transistor 9718

Abstract: transistor 7412 Ordering number : ENN7327 2SC5648 NPN Epitaxial Planar Silicon Transistor 2SC5648 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2159 : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead package 0.25 (1.4mm0.8mm0.6mm). [2SC5648] 1.4 2 0.3 1 0.45 0.1 3 0.8 · Package Dimensions 1.4 ·
SANYO Electric
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transistor 9718 transistor 7412 ETC 9668 007mA 2238 600 D2502

transistor d 1825 7c

Abstract: BU406 SANYO SEMI CON DUCTOR CORP IB E D I Tn?07b T ' 3 3 - / / D00S4flti BU406. 407 2010A NPN Epitaxial Planar Silicon Transistors C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output 4. Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Peak Collector Current Base Current Collector
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transistor d 1825 7c D00S4 BU407 PU-20 IOIBJ--101B2-IC 0085MW BU406/407-1/3

transistor bt 808

Abstract: transistor 1548 b DESCRIPTION Silicon NPN transistor in a plastic SOT23 envelope. It is designed for wideband applications , Semiconductors - N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor Product specification , - N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor b7E Product specification T , NPN 8 GHz wideband transistor November 1992 980 Product specification b7E J > BFQ67 â , ] -> Philips Semiconductors NPN 8 GHz wideband transistor November 1992 BFQ67 981 bt
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transistor bt 808 transistor 1548 b
Abstract: capacitor sources a single transistor forward converter. Each output is powered by a separate secondary , transistor. This signal is fed back via a coupling transformer. The auxiliary outputs Uo2 and Uo3 are , broken fuses, except if a power component inside fails (switching transistor, freewheeling diode, etc). , (JFET output) or "high" signal (NPN output) is generated at pin 5 as soon as one of the monitored , following table. Table 21: Undervoltage monitor functions Output type JFET NPN D1 D2 D3 D4 D0 D5 D6 D7 Power-One
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TAG 453 665 800

Abstract: tag 665 100 AMER PHILIPS/DISCRETE b?E D mmmm^mmmm*mm NPN 8 GHz wideband transistor BFQ67 FEATURES PINNING â , ¡025Ob7 2T7 MAPX Product specification N AP1ER PHILIPS/DISCRETE b7E D- NPN 8 GHz wideband transistor BFQ67 , Semiconductors Product specification N AMER PHILIPS/DISCRETE b?E D- NPN 8 GHz wideband transistor BFQ67 Ts , Product specification -N AMER PHILIPS/DISCRETE b7E »- NPN 8 GHz wideband transistor BFQ67 In Figs 6 to , NPN 8 GHz wideband transistor BFQ67 MflR-ÃOS lc(mA) Vc= = 8 V. Fig.10 Minimum noise figure as a
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TAG 453 665 800 tag 665 100 ati 0943 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor d 2389 transistor BF 672

transistor 9718

Abstract: transistor 7412 Ordering number : ENN7327 2SC5648 NPN Epitaxial Planar Silicon Transistor 2SC5648 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2159 : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead package 0.25 (1.4mm!0.8mm!0.6mm). [2SC5648] 1.4 0.1 3 0.8 · Package Dimensions 2 0.3 1 0.45 1.4 ·
SANYO Electric
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ta 5732 84-10 osc marking nh

"AC-DC Converters"

Abstract: capacitor sources a single transistor forward converter. Each output is powered by a separate secondary , transistor. This signal is fed back via a coupling transformer. The auxiliary outputs Uo2 and Uo3 are , broken fuses, except if a power component inside fails (switching transistor, freewheeling diode, etc). , (JFET output) or "high" signal (NPN output) is generated at pin 5 as soon as one of the monitored , following table. Table 21: Undervoltage monitor functions Output type JFET NPN D1 D2 D3 D4 D0 D5 D6 D7
Power-One
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melcher LM 1000

Abstract: melcher LM 3000 V (open-collector output of a NPN transistor). The pull-up resistor feeding the open-collector , open collector of a NPN transistor. The emitter is connected to the negative potential of output 1. U V , an inrush current limiter to the input capacitor. This capacitor sources a single transistor forward , , the control signal for the pri- mary switching transistor. This signal is fed back via a coupling , input undervoltage lockout circuit. A logic "low" (JFET output) or "high" signal (NPN output) is
Melcher
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melcher LM 1000 melcher LM 3000 Melcher M 3000 lm 3000 melcher LM 2000 melcher melcher 1501-7R 2540-7PD3A

70413080

Abstract: 70473180 70400013 NPN DARLINGTON A63 MPS-A63 MPS-A63 70400063 PNP DARLINGTON 1815 2SC1815 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , transistors. Example: 70484200 = Transistor/NPN/4 amps/200 volt. CATEGORY/POLARITY/IC VALUE/BVCEO VALUE 704 , SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE
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70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 2N3391 SPS-953 MPS-8097 2N6520 MPS-A18 2N6539

fuse smd code ud

Abstract: transistor 6823 . The current /D through the NPN transistor should not exceed 20 mA. The NPN output is not protected , . The Out OK signal is an open collector transistor output ref erenced to V o - and indicates that the , signal with corresponding transistor status Table 9: Out O K characteristics Out OK characteristics iDon , output conducting D output disabled Hysteresis Transistor on delay Transistor off delay 140 2.85 max
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fuse smd code ud transistor 6823 Zener diode smd marking code 621 CT PRO XT 150 SELV Zener diode smd marking code 63A C3811 7-05-05-7M 7-0505-7XC

fuse smd code ud

Abstract: Nippon Chemi-Con sxe capacitor low output voltage. The current ID through the NPN transistor should not exceed 20 mA. The NPN , provided with a Out OK function. The D-output is an open collector transistor output referenced to Vo­ and , delay t D off delay Fig. 7 Out OK signal with corresponding transistor status Vo+ Table 9 , IMX 7-Family UD low Transistor off delay 3.0 2.85 4.75 4.5 30 (typical) 140 V 560 100 140 mV 560 ms 100 µs 6.1 Transistor on delay t D off delay Fig. 6
Melcher
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Nippon Chemi-Con sxe capacitor Nippon Chemi-Con sxe Nippon sxe SMD MARKING CODE zener diode 501 Melcher M 1000 Melcher 40 IMX

ic 74226

Abstract: jk flip flop 74103 Bipolar Transistor (Sm all Signal) N PN(Driver) m. > pvjp (Lateral) (Vertical) Pinched Resistors , 400 + decoder 16(with NPN Tr) 37(with NPN Tr) 14(with PNP Tr) 28,40,64 S 24,28,40,64 S 44,54,60 44,54 , 1SE ? 7744^0 0000705 T c LIST OF CHA RA CTERISTICS · SMALL SIGNAL N PN TRANSISTOR Param , SMALL SIGNAL LATERAL P N P TRANSISTOR Param eters Min 50 80 510 20 100 100 1000 1500 2000 Typ 75 120 540 , esistance (@ Ic = 100/iA , I b= 10//A) · SMALL SIGNAL VERTICAL PNP TRANSISTOR Param eters M in 60 80
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ic 74226 jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list RP3G01 3W1X879 00GG71S

melcher LM 1000

Abstract: lm 3000 melcher switching transistor. This signal is fed back via a coupling transformer. The input voltage is fed via an , capacitor sources a single transistor forward converter. Each output is powered by a separate secondary
Melcher
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Melcher M 1000 AC-DC/DC-DC CONVERTER Melcher CM-1000 melcher bM 3000 melcher LM Melcher AM 1000 melcher am 3000 converter

capacitor vehicle mttf

Abstract: 150W TRANSISTOR AUDIO AMPLIFIER of the removed heat on other devices. Figure 1 shows the average of NPN and PNP power transistor , (TJMAX - 25°C) / JC (1) This rating is consistent with rating methods of most transistor
Apex Microtechnology
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capacitor vehicle mttf 150W TRANSISTOR AUDIO AMPLIFIER extreme pressure grease MO-127 PA12 TW03 546-APEX MIL-HDBK-217C AN11U

APEX PA12

Abstract: of the removed heat on other devices. Figure 1 shows the average of NPN and PNP power transistor , transistor manufacturers and should not be confused with advertised output power which is highly application
Apex Microtechnology
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APEX PA12

melcher S-1000

Abstract: melcher k 4000 converter ): Connector pin D is internally connected via the collectoremitter path of a NPN transistor to the negative , specified at a sink current of IV 48 mA to UV 0.6 V (open-collector output of a NPN transistor). The , (V0, V2, V3): Connector pin V is internally connected to the open collector of a NPN transistor. The , rectifier and an inrush current limiter to the input capacitor. This capacitor sources a single transistor , output currents, the control signal for the primary switching transistor. The second output of double
Melcher
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melcher S-1000 melcher k 4000 converter Melcher LK 2000 melcher s 2000 2540-7PD3
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