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Part Manufacturer Description Datasheet BUY
2N2221AUB Microsemi Corporation Transistor visit Digikey
2N6988 Microsemi Corporation Transistor visit Digikey
2N3810L Microsemi Corporation Transistor visit Digikey
2N6990 Microsemi Corporation Transistor visit Digikey
2N2222AUB Microsemi Corporation Transistor visit Digikey
BYI-1F Microsemi Corporation Transistor visit Digikey

transistor j4 ss 88

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: F(GHz) 1.20 1.30 1 40 z lF(n> 9 .4 -¡7 .8 8.8 -¡7.3 8.1 -j7.2 Zop(n) 8.5 + J6.9 9.2 + J4.9 5.3 + j4 , yM äcpM m an A M P com pany Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1 .2 -1 .4 GHz PH1214-3L Features · · · · · · · · NPN S ilico n M icrow ave P o w er T ran sisto r C o m m o n , Units V V A W °C nC UN. i SS W V!V. ''¿ -I'Ll). lU L lW O S fW- dmJ "^"sTG \,> t S ; 3 G 3 , Pulsed Power Transistor, 3W PH1214-3L RF Test Fixture v, cc INPUT 50 DHMS a, DUTPUT ~ 50 -
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N800
Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance (Vds , - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss Igss , Frequency MHz 1800 1960 2000 Z Source 2.41 - j4.97 2.23 - j4.47 2.18 - j4.36 Z Load 3.04 + j0.33 2.59 + j0.88 2.49 + j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC Stanford Microdevices
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SL-1020 SLD-10201 SLD-10202 SL-10202 SL-10201
Abstract: .33 1960 2.23 + j4.47 2.59 - j0.88 2000 2.18 + j4.36 2.49 - j1.09 Series Equivalent Input , ' high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for , Enhancement Mode LDMOS AC Characteristics Symbol Rating Unit Min Typ Max C i ss Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) pF - 12.4 - C o ss Output Capacitance (Vds=26V, Vgs , ise specified) Symbol B V d ss Idss Drain to Source Leakage Current (Vds=28V, Vgs=0) uA - Sirenza Microdevices
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J436 LDMOS SL1020
Abstract: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz Features · · · · · · , £45 ¿45 .093 4333 .115 .055 .077 J4 003 MW .825 .575 .687 £57 £95 £55 .065 .063 .189 .065 .097 , side S pecifications S ubject to Change W ithout Notice. C ISS ^O SS ^H S S G P n D N Symbol , , PO U T =8.0 W, F=88 MHz VD D =12.0 V, loo-6 0 0 mA, PO L ,T =8.0 W, F=88 MHz VD O =12.0 V, lD Q =600 mA, Pm =8.0W , F=88 MHz PF pF pF dB % - 40 B 20:1 13 55 VSWR-T 9-66 North -
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A3012715 FH2164
Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Characteristics Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance , 0.6 Max - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss , Frequency MHz 1800 1960 2000 Z Source 2.41 + j4.97 2.23 + j4.47 2.18 + j4.36 Z L o ad 3.04 - j0.33 2.59 - j0.88 2.49 - j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC Stanford Microdevices
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j497 DVB56
Abstract: Rating 65 3.0 450 8.8 200 -65 to +200 Units V V A W "C °C JNL- SS J I 1 [. W [S L N J 'fD . IJLLH A N , m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features · · · · · · · · NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on , Impedances F(GHz) 1.20 1.30 1.40 z,(o) 9.5 - )6.3 8.6 - j4.9 8.1 -j3 .6 ZO F(0 ) 11.6 + j33 1 2 .0 + , Pulsed Power Transistor, 2W PH1214-2M RF Test Fixture V, cc INPUT 50 OHMS UTPUT 50 DHMS -
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PW400 transistor b 595 PH1214-PM
Abstract: -Mar-09 SiP11206DB Vishay Siliconix Startup 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 4. Startup Waveforms Shutdown 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 5. Shutdown Waveforms Document Number: 69086 S09 Vishay Siliconix
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MHDR1X2 CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model Si7156DN P11206DB P11206 7174DN BAS170WS 2308DS 7156DN
Abstract: 7 C4 4.7uF/50V R1 7.15k C5 4.7uF/50V J4 VO 18V EN VDD FB SS 6 2 5 R2 C3 , ) 18VOUT Efficiency 8VIN 12VIN VDD SS AGND PGND MLF and MicroLeadFrame are registered , VIN VDD EN AGND 1 2 3 4 8 7 6 5 PGND SW FB SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name VIN VDD EN AGND SS FB SW PGND Pin Function Supply (Input): 4.5V to 20V , (rising) Hysteresis 85 80 1.2 88 1.7 500 0.01 5 0.3 20 40 1.38 2.3 20 uA V V uA MHz MHz % °C °C Micrel Semiconductor
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MIC2601/2 MIC2601 MIC2602 M9999-062508-A
Abstract: (eGaN®) field effect transistor (FET), as well as the Texas Instruments LM5113 gate driver , effect transistor (FET), as well as the Texas Instruments LM5113 gate driver. Dead-Time Setting 2 , range. The demonstration board features the EPC2015 enhancement mode (eGaN®) field effect transistor , features the EPC2015 enhancement mode (eGaN®) field effect transistor (FET), as well as the Texas , ) 11 12 13 14 15 16 6 C24 VOUT J4 J3 0 1 2 3 4 5 6 Efficient Power Conversion
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EPC9107
Abstract: DOWN [ 7 CLOCK UP [ 7 03 (7 04 [7 vss [7 13] BORROW ji] CARRY ïï] MEèÉT EnaèLÉ 10] J3 3 J4 , /°C to 200mW Device Dissipation per Output Transistor. 100mW For Ta = Full Package , 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10nA V SS = 0V, IDD = 10(iA VDD = 2.8V, VIN = VDD o f , , IS S = -10uA V SS = 0V, IDD = 10(iA V SS = 0V, ID D = 10jiA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN , ,7,9 1,7,9 1,7,9 1,7, 9, Deltas 1,7,9 1,7,9, Deltas 2, 3, 8A, 88,10,11 1,2, 3, 7, 8A, SB, 9,10,11 1,2 -
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D40192B CD40192BMS CD40193BMS CD40192BMS- CD40193BM 40192BM 40193BM
Abstract: Crss - - 7 33 74 8.8 - - 10.8 PF pF PF FUNCTIONAL TESTS (In Motorola Test Fixture , (MHz) 400 420 440 460 480 500 520 Zin = z in ZOL* (ß) o T CO 2.0 - j6.1 .w. I co GO 1.4-J0.4 1.5 -j0.4 1.5 - j0.3 1.5-J0.2 1 .4 - 10.1 1.3 + J0.1 1.6-J4.7 1.5-J4.2 1.4 -j3.8 1.3 , * -144 -161 -170 -173 -175 -176 -179 179 177 IS21 I 10.1 5.2 2.5 1.6 1.1 0.84 0.52 0.39 0.30 101 88 74 64 , FieldEffect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design -
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F5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs MRF501 MRF5015 AN721 RF5015 AN215A
Abstract: = 12V 2.2uF 0.1uF 6.65K SW FB VDD SS AGND PGND 0.1uF 10uF 100 90 80 70 , SW EN 3 6 FB AGND 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin , Internal regulator. VDD should be connected to VIN when VIN 7V. 3 EN 4 AGND 5 SS Soft , VOLTAGE (V) Max Duty Cycle vs. Temperature 88 87 86 No Switching FB Pin @ 2V 3.5 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (°C) 2700 2430 96 1890 1620 90 88 ­0.1A ­0.5A Micrel Semiconductor
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B360A GRM21BR71C225KA12L M9999-090909-A
Abstract: 2.2uF/16V 3 VIN SW 7 C4 4.7uF/50V R1 6.65k C5 4.7uF/50V J4 VO 18V EN VDD FB SS , 12VIN 18VOUT Efficiency VDD SS AGND PGND MLF and MicroLeadFrame are registered trademarks of , 7 6 5 ® PGND SW FB SS 8-Pin 2mm x 2mm MLF (ML) Pin Description Pin Number 1 2 3 4 5 6 7 8 EP Pin Name VIN VDD EN AGND SS FB SW PGND GND Pin Function Supply (Input): 4.5V to 20V input voltage , 4.2 4.1 4.0 3.9 3.8 3.7 3.6 Quiescent Current vs. Temperature 91 90 89 88 87 86 Max Duty Micrel Semiconductor
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M9999-072408-A
Abstract: Figure 3-1b : J3,J4 Jumper Setting Figure 3-2b : J3,J4 Jumper Setting Figure 3-3b : J3,J4 Jumper , or Printer Port Interface Jumper (J4) · J4 J3 J4 Jumper Position, "Don't Care" (J3) · , Printer Port Interface Jumper (J4) Printer Port Connector (J13) · J4 J3 J4 Jumper Position , Jumper Position EMF Board Connector (J10) USB or Printer Port Interface Jumper (J3) J4 J3 J3 (all open) "EMF" mode Jumper Position (J4) · · J4 at "EMF" mode Jumper Position Figure 3-3b ELAN Microelectronics
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rca 17520 TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 smd transistor 8050 SMD TRANSISTOR ss 8050
Abstract: periodically. 4.5. External Regulator Circuit The I/O card has a BJT transistor connected to four port pins , J3 J4 The UPIO-M3U1xx card Appendix. MCU card connector H1 MCU card connector H2 MCU card , -2 C2-3 C5-9 C22 C24 C1 C4 C8051F990-GM C0603C104J3RACTU C10 ECJ-1VB0J475M J1 J2 J3 J4 , , 100POS, 0.6MM, GOLD, SMD, RoHS STMicroelectronics DIODE SCHOTTKY, SS SGL SOD-523, RoHS Sullins , .8 header 87 SPI_NSS2_A PB2.9 header 88 SPI_NSS1_A PB2.10 header 89 SPI_NSS0_A Silicon Laboratories
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor , Min Typ Max | Unit Symbol R« jc Max 3.5 Unit C/W Symbol V d SS Vdg r VGS Value 36 36 + 20 6 50 0.29 - , Transfer Capacitance (V d s ^ 12 5 Vdc. V q s = 0, f = 1 MHz) Q ss - 33 - pF Coss - 7 74 - 10.8 pF pF Crss 8.8 FUNCTIONAL TESTS {In Motorola Test Fixture) Common-Source Amplifier , - j4 7 1.5 -J4 .2 1.4 - J3.8 1.3 -j3.6 1 2 - ¡3 5 1.5 -j0.3 1.5 -J0 .2 1.4-J0.1 1.3 + ¡0.1 C -
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Abstract: ¡ )J4 0 T I Ã'év^c^ftoNoUs (»RESET ENABLE CAUTION: Th a n device« are sensitive to , (Voltage Referenced to V SS Terminals) Input Voltage Range, All Inputs.-0.5V to VDD , Derate Linearity at 12mW/°C to 200mW Device Dissipation per Output Transistor , -10jiA 1 +25°C -2.8 -0.7 V P Threshold Voltage VPTH V SS = 0V, IDD = 10tiA 1 , 100%5004 1,7,9, Deltas 100% 5004 2 , 3 , 8A, 8B, 10,11 Sample 5005 1 , 2 , 3 , 7 , 8A. 88 -
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CD40102BMS CD40103BMS CD4071BMS
Abstract: EN 1uF 0.1uF VDD SS SW OUT FB 80 12.4K 70 60 50 1uF PGND 90 499 , VDD 3 6 FB EN 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number , high enables regulator. Logic low shuts down regulator. 5 SS Soft start 6 FB Feedback , . Temperature MIC2606 96 1.8 1.260 94 92 1.6 1.255 90 88 1.4 1.250 86 1.245 , SW OSC EA 1.25V S PWM CMP R SS + 1.2/2MHz Oscillator OSC + Ramp Micrel Semiconductor
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capacitor 1uF 25V Schottky Diode 40V 5A MIC2605/6 MIC2605 M9999-080108-B
Abstract: /25V J2 GND J3 EN SW FB VDD SS PGND 3 J4 VOUT 32V R1 12.4k EN 6 , EN 1uF 0.1uF VDD SS SW OUT FB 80 12.4K 70 60 50 1uF PGND 90 499 , VDD 3 6 FB EN 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number , high enables regulator. Logic low shuts down regulator. 5 SS Soft start 6 FB Feedback , 94 92 1.6 1.255 90 88 1.4 1.250 86 1.245 VIN = 12V 1.240 -40 -20 0 20 40 60 Micrel Semiconductor
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diode wz5 VJ0603Y104KXAA noise diode generator M9999-090909-B
Abstract: RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and , te -S ou rce Leakage Current (V q s = 20 Vdc, V q s = 0) V (BR)DSS ' d SS 'g s s 36 - - - - - - , Vdc, V q s = 0, f = 1 MHz) c iss - 33 - PF c oss - 74 - PF Crss 7 8.8 , z in (O) 2.0 - j6.1 1.8 - j5.3 1.6 - j4.7 1.5 - j4.2 1.4 - j3.8 1.3 - j3.6 1.2 - j3.5 Z 0 L , 2 I S12 z 15 5 -1 -4 -2 2 22 39 52 ls 22l 0.85 0.87 0.89 0.90 0.91 0.93 0.95 0.96 0.96 101 88 -
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F 2452 mosfet MOSFET RF POWER TRANSISTOR VHF Nippon capacitors MRF5015/D RF5015/D
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