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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor j4 ss 88

Catalog Datasheet MFG & Type PDF Document Tags

N800

Abstract: F(GHz) 1.20 1.30 1 40 z lF(n> 9 .4 -¡7 .8 8.8 -¡7.3 8.1 -j7.2 Zop(n) 8.5 + J6.9 9.2 + J4.9 5.3 + j4 , yM äcpM m an A M P com pany Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1 .2 -1 .4 GHz PH1214-3L Features · · · · · · · · NPN S ilico n M icrow ave P o w er T ran sisto r C o m m o n , Units V V A W °C nC UN. i SS W V!V. ''¿ -I'Ll). lU L lW O S fW- dmJ "^"sTG \,> t S ; 3 G 3 , Pulsed Power Transistor, 3W PH1214-3L RF Test Fixture v, cc INPUT 50 DHMS a, DUTPUT ~ 50
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N800
Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance (Vds , - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss Igss , Frequency MHz 1800 1960 2000 Z Source 2.41 - j4.97 2.23 - j4.47 2.18 - j4.36 Z Load 3.04 + j0.33 2.59 + j0.88 2.49 + j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC Stanford Microdevices
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SL-1020 SLD-10201 SLD-10202 SL-10202 SL-10201

LDMOS

Abstract: SL-10202 .33 1960 2.23 + j4.47 2.59 - j0.88 2000 2.18 + j4.36 2.49 - j1.09 Series Equivalent Input , ' high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for , Enhancement Mode LDMOS AC Characteristics Symbol Rating Unit Min Typ Max C i ss Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) pF - 12.4 - C o ss Output Capacitance (Vds=26V, Vgs , ise specified) Symbol B V d ss Idss Drain to Source Leakage Current (Vds=28V, Vgs=0) uA -
Sirenza Microdevices
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LDMOS SL1020 J436

transistor j4 ss 88

Abstract: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz Features · · · · · · , £45 ¿45 .093 4333 .115 .055 .077 J4 003 MW .825 .575 .687 £57 £95 £55 .065 .063 .189 .065 .097 , side S pecifications S ubject to Change W ithout Notice. C ISS ^O SS ^H S S G P n D N Symbol , , PO U T =8.0 W, F=88 MHz VD D =12.0 V, loo-6 0 0 mA, PO L ,T =8.0 W, F=88 MHz VD O =12.0 V, lD Q =600 mA, Pm =8.0W , F=88 MHz PF pF pF dB % - 40 B 20:1 13 55 VSWR-T 9-66 North
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transistor j4 ss 88 A3012715 FH2164

j497

Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Characteristics Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance , 0.6 Max - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss , Frequency MHz 1800 1960 2000 Z Source 2.41 + j4.97 2.23 + j4.47 2.18 + j4.36 Z L o ad 3.04 - j0.33 2.59 - j0.88 2.49 - j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC
Stanford Microdevices
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j497 DVB56

PW400

Abstract: transistor b 595 Rating 65 3.0 450 8.8 200 -65 to +200 Units V V A W "C °C JNL- SS J I 1 [. W [S L N J 'fD . IJLLH A N , m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features · · · · · · · · NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on , Impedances F(GHz) 1.20 1.30 1.40 z,(o) 9.5 - )6.3 8.6 - j4.9 8.1 -j3 .6 ZO F(0 ) 11.6 + j33 1 2 .0 + , Pulsed Power Transistor, 2W PH1214-2M RF Test Fixture V, cc INPUT 50 OHMS UTPUT 50 DHMS
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PW400 transistor b 595 PH1214-PM

MHDR1X2

Abstract: CR3216-1206 -Mar-09 SiP11206DB Vishay Siliconix Startup 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 4. Startup Waveforms Shutdown 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 5. Shutdown Waveforms Document Number: 69086 S09
Vishay Siliconix
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MHDR1X2 CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model Si7156DN P11206DB P11206 7174DN BAS170WS 2308DS 7156DN
Abstract: 7 C4 4.7µF/50V R1 7.15k C5 4.7µF/50V J4 VO 18V EN VDD FB SS 6 2 5 R2 C3 , ) 18VOUT Efficiency 8VIN 12VIN VDD SS AGND PGND MLF and MicroLeadFrame are registered , VIN VDD EN AGND 1 2 3 4 8 7 6 5 PGND SW FB SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name VIN VDD EN AGND SS FB SW PGND Pin Function Supply (Input): 4.5V to 20V , (rising) Hysteresis 85 80 1.2 88 1.7 500 0.01 5 0.3 20 40 1.38 2.3 20 µA V V µA MHz MHz % °C °C Micrel Semiconductor
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MIC2601/2 MIC2601 MIC2602 M9999-062508-A
Abstract: (eGaN®) field effect transistor (FET), as well as the Texas Instruments LM5113 gate driver , effect transistor (FET), as well as the Texas Instruments LM5113 gate driver. Dead-Time Setting 2 , range. The demonstration board features the EPC2015 enhancement mode (eGaN®) field effect transistor , features the EPC2015 enhancement mode (eGaN®) field effect transistor (FET), as well as the Texas , ) 11 12 13 14 15 16 6 C24 VOUT J4 J3 0 1 2 3 4 5 6 Efficient Power Conversion
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EPC9107

D40192B

Abstract: DOWN [ 7 CLOCK UP [ 7 03 (7 04 [7 vss [7 13] BORROW ji] CARRY ïï] MEèÉT EnaèLÉ 10] J3 3 J4 , /°C to 200mW Device Dissipation per Output Transistor. 100mW For Ta = Full Package , 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10nA V SS = 0V, IDD = 10(iA VDD = 2.8V, VIN = VDD o f , , IS S = -10uA V SS = 0V, IDD = 10(iA V SS = 0V, ID D = 10jiA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN , ,7,9 1,7,9 1,7,9 1,7, 9, Deltas 1,7,9 1,7,9, Deltas 2, 3, 8A, 88,10,11 1,2, 3, 7, 8A, SB, 9,10,11 1,2
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D40192B CD40192BMS CD40193BMS CD40192BMS- CD40193BM 40192BM 40193BM

15J02

Abstract: 15j02 rf Motorola Crss - - 7 33 74 8.8 - - 10.8 PF pF PF FUNCTIONAL TESTS (In Motorola Test Fixture , (MHz) 400 420 440 460 480 500 520 Zin = z in ZOL* (ß) o T CO 2.0 - j6.1 .w. I co GO 1.4-J0.4 1.5 -j0.4 1.5 - j0.3 1.5-J0.2 1 .4 - 10.1 1.3 + J0.1 1.6-J4.7 1.5-J4.2 1.4 -j3.8 1.3 , * -144 -161 -170 -173 -175 -176 -179 179 177 IS21 I 10.1 5.2 2.5 1.6 1.1 0.84 0.52 0.39 0.30 101 88 74 64 , FieldEffect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design
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F5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 MRF5015 AN721 RF5015 AN215A

GRM21BR71C225KA12L

Abstract: B360A = 12V 2.2µF 0.1µF 6.65K SW FB VDD SS AGND PGND 0.1µF 10µF 100 90 80 70 , SW EN 3 6 FB AGND 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin , Internal regulator. VDD should be connected to VIN when VIN 7V. 3 EN 4 AGND 5 SS Soft , VOLTAGE (V) Max Duty Cycle vs. Temperature 88 87 86 No Switching FB Pin @ 2V 3.5 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (°C) 2700 2430 96 1890 1620 90 88 ­0.1A ­0.5A
Micrel Semiconductor
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GRM21BR71C225KA12L B360A M9999-090909-A
Abstract: 2.2µF/16V 3 VIN SW 7 C4 4.7µF/50V R1 6.65k C5 4.7µF/50V J4 VO 18V EN VDD FB SS , 12VIN 18VOUT Efficiency VDD SS AGND PGND MLF and MicroLeadFrame are registered trademarks of , 7 6 5 ® PGND SW FB SS 8-Pin 2mm x 2mm MLF (ML) Pin Description Pin Number 1 2 3 4 5 6 7 8 EP Pin Name VIN VDD EN AGND SS FB SW PGND GND Pin Function Supply (Input): 4.5V to 20V input voltage , 4.2 4.1 4.0 3.9 3.8 3.7 3.6 Quiescent Current vs. Temperature 91 90 89 88 87 86 Max Duty Micrel Semiconductor
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M9999-072408-A

rca 17520

Abstract: TRANSISTOR SMD nc46 Figure 3-1b : J3,J4 Jumper Setting Figure 3-2b : J3,J4 Jumper Setting Figure 3-3b : J3,J4 Jumper , or Printer Port Interface Jumper (J4) · J4 J3 J4 Jumper Position, "Don't Care" (J3) · , Printer Port Interface Jumper (J4) Printer Port Connector (J13) · J4 J3 J4 Jumper Position , Jumper Position EMF Board Connector (J10) USB or Printer Port Interface Jumper (J3) J4 J3 J3 (all open) "EMF" mode Jumper Position (J4) · · J4 at "EMF" mode Jumper Position Figure 3-3b
ELAN Microelectronics
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rca 17520 TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 smd 8050 transistor pa15 transistor
Abstract: periodically. 4.5. External Regulator Circuit The I/O card has a BJT transistor connected to four port pins , J3 J4 The UPIO-M3U1xx card Appendix. MCU card connector H1 MCU card connector H2 MCU card , -2 C2-3 C5-9 C22 C24 C1 C4 C8051F990-GM C0603C104J3RACTU C10 ECJ-1VB0J475M J1 J2 J3 J4 , , 100POS, 0.6MM, GOLD, SMD, RoHS STMicroelectronics DIODE SCHOTTKY, SS SGL SOD-523, RoHS Sullins , .8 header 87 SPI_NSS2_A PB2.9 header 88 SPI_NSS1_A PB2.10 header 89 SPI_NSS0_A Silicon Laboratories
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor , Min Typ Max | Unit Symbol R« jc Max 3.5 Unit C/W Symbol V d SS Vdg r VGS Value 36 36 + 20 6 50 0.29 - , Transfer Capacitance (V d s ^ 12 5 Vdc. V q s = 0, f = 1 MHz) Q ss - 33 - pF Coss - 7 74 - 10.8 pF pF Crss 8.8 FUNCTIONAL TESTS {In Motorola Test Fixture) Common-Source Amplifier , - j4 7 1.5 -J4 .2 1.4 - J3.8 1.3 -j3.6 1 2 - ¡3 5 1.5 -j0.3 1.5 -J0 .2 1.4-J0.1 1.3 + ¡0.1 C -
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Abstract: ¡ )J4 0 T I Ã'év^c^ftoNoUs (»RESET ENABLE CAUTION: Th a n device« are sensitive to , (Voltage Referenced to V SS Terminals) Input Voltage Range, All Inputs.-0.5V to VDD , Derate Linearity at 12mW/°C to 200mW Device Dissipation per Output Transistor , -10jiA 1 +25°C -2.8 -0.7 V P Threshold Voltage VPTH V SS = 0V, IDD = 10tiA 1 , 100%5004 1,7,9, Deltas 100% 5004 2 , 3 , 8A, 8B, 10,11 Sample 5005 1 , 2 , 3 , 7 , 8A. 88 -
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CD40102BMS CD40103BMS CD4071BMS

capacitor 1uF 25V

Abstract: Schottky Diode 40V 5A EN 1µF 0.1µF VDD SS SW OUT FB 80 12.4K 70 60 50 1µF PGND 90 499 , VDD 3 6 FB EN 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number , high enables regulator. Logic low shuts down regulator. 5 SS Soft start 6 FB Feedback , . Temperature MIC2606 96 1.8 1.260 94 92 1.6 1.255 90 88 1.4 1.250 86 1.245 , SW OSC EA 1.25V S PWM CMP R SS + 1.2/2MHz Oscillator OSC + Ramp
Micrel Semiconductor
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capacitor 1uF 25V Schottky Diode 40V 5A MIC2605/6 MIC2605 M9999-080108-B

VJ0603Y104KXAA

Abstract: capacitor 1uF 25V /25V J2 GND J3 EN SW FB VDD SS PGND 3 J4 VOUT 32V R1 12.4k EN 6 , EN 1µF 0.1µF VDD SS SW OUT FB 80 12.4K 70 60 50 1µF PGND 90 499 , VDD 3 6 FB EN 4 5 SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number , high enables regulator. Logic low shuts down regulator. 5 SS Soft start 6 FB Feedback , 94 92 1.6 1.255 90 88 1.4 1.250 86 1.245 VIN = 12V 1.240 -40 -20 0 20 40 60
Micrel Semiconductor
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VJ0603Y104KXAA diode wz5 noise diode generator M9999-090909-B

mrf5015

Abstract: F 2452 mosfet RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and , te -S ou rce Leakage Current (V q s = 20 Vdc, V q s = 0) V (BR)DSS ' d SS 'g s s 36 - - - - - - , Vdc, V q s = 0, f = 1 MHz) c iss - 33 - PF c oss - 74 - PF Crss 7 8.8 , z in (O) 2.0 - j6.1 1.8 - j5.3 1.6 - j4.7 1.5 - j4.2 1.4 - j3.8 1.3 - j3.6 1.2 - j3.5 Z 0 L , 2 I S12 z 15 5 -1 -4 -2 2 22 39 52 ls 22l 0.85 0.87 0.89 0.90 0.91 0.93 0.95 0.96 0.96 101 88
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F 2452 mosfet Nippon capacitors MOSFET RF POWER TRANSISTOR VHF MRF5015/D RF5015/D
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