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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor j4 ss 88

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: F(GHz) 1.20 1.30 1 40 z lF(n> 9 .4 -¡7 .8 8.8 -¡7.3 8.1 -j7.2 Zop(n) 8.5 + J6.9 9.2 + J4.9 5.3 + j4 , yM äcpM m an A M P com pany Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1 .2 -1 .4 GHz PH1214-3L PH1214-3L Features · · · · · · · · NPN S ilico n M icrow ave P o w er T ran sisto r C o m m o n , Units V V A W °C nC UN. i SS W V!V. ''¿ -I'Ll). lU L lW O S fW- dmJ "^"sTG \,> t S ; 3 G 3 , Pulsed Power Transistor, 3W PH1214-3L PH1214-3L RF Test Fixture v, cc INPUT 50 DHMS a, DUTPUT ~ 50 ... OCR Scan
datasheet

2 pages,
49.88 Kb

N800 PH1214-3L TEXT
datasheet frame
Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance (Vds , - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss Igss , Frequency MHz 1800 1960 2000 Z Source 2.41 - j4.97 2.23 - j4.47 2.18 - j4.36 Z Load 3.04 + j0.33 2.59 + j0.88 2.49 + j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC ... Stanford Microdevices
Original
datasheet

8 pages,
122.43 Kb

SL-1020 TEXT
datasheet frame
Abstract: .33 1960 2.23 + j4.47 2.59 - j0.88 2000 2.18 + j4.36 2.49 - j1.09 Series Equivalent Input , ' high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for , Enhancement Mode LDMOS AC Characteristics Symbol Rating Unit Min Typ Max C i ss Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) pF - 12.4 - C o ss Output Capacitance (Vds=26V, Vgs , ise specified) Symbol B V d ss Idss Drain to Source Leakage Current (Vds=28V, Vgs=0) uA - ... Sirenza Microdevices
Original
datasheet

8 pages,
146.67 Kb

SL1020 SL-10202 LDMOS J436 SL-1020 TEXT
datasheet frame
Abstract: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz Features · · · · · · , £45 ¿45 .093 4333 .115 .055 .077 J4 003 MW .825 .575 .687 £57 £95 £55 .065 .063 .189 .065 .097 , side S pecifications S ubject to Change W ithout Notice. C ISS ^O SS ^H S S G P n D N Symbol , , PO U T =8.0 W, F=88 MHz VD D =12.0 V, loo-6 0 0 mA, PO L ,T =8.0 W, F=88 MHz VD O =12.0 V, lD Q =600 mA, Pm =8.0W , F=88 MHz PF pF pF dB % - 40 B 20:1 13 55 VSWR-T 9-66 North ... OCR Scan
datasheet

1 pages,
35.69 Kb

transistor j4 ss 88 A3012715 TEXT
datasheet frame
Abstract: LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output , Characteristics Symbol C i ss C o ss Crss Rating Input Capacitance (Vds=26V, Vgs=0V, f=1MHz) Output Capacitance , 0.6 Max - Electrical DC Characteristics(Tc=25°C unless otherw ise specified) Symbol B V d ss Idss , Frequency MHz 1800 1960 2000 Z Source 2.41 + j4.97 2.23 + j4.47 2.18 + j4.36 Z L o ad 3.04 - j0.33 2.59 - j0.88 2.49 - j1.09 Series Equivalent Input and Output Impedances, Vdd= 26V, Idq= 95mA DC ... Stanford Microdevices
Original
datasheet

8 pages,
146.64 Kb

j497 SL-1020 TEXT
datasheet frame
Abstract: Rating 65 3.0 450 8.8 200 -65 to +200 Units V V A W "C °C JNL- SS J I 1 [. W [S L N J 'fD . IJLLH A N , m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M PH1214-2M Features · · · · · · · · NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on , Impedances F(GHz) 1.20 1.30 1.40 z,(o) 9.5 - )6.3 8.6 - j4.9 8.1 -j3 .6 ZO F(0 ) 11.6 + j33 1 2 .0 + , Pulsed Power Transistor, 2W PH1214-2M PH1214-2M RF Test Fixture V, cc INPUT 50 OHMS UTPUT 50 DHMS ... OCR Scan
datasheet

2 pages,
51.25 Kb

transistor b 595 PW400 PH1214-2M TEXT
datasheet frame
Abstract: -Mar-09 SiP11206DB SiP11206DB Vishay Siliconix Startup 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Startup 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Startup 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 4. Startup Waveforms Shutdown 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT Shutdown 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Shutdown 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT Figure 5. Shutdown Waveforms Document Number: 69086 S09 ... Vishay Siliconix
Original
datasheet

8 pages,
881.66 Kb

EI 33 SWITCHING TRANSFORMER EI-18 IHLP-2525CZ-01 LM26-Thermal-Sensor LM4120 Vishay Diode BAS16 mhdr 0402 100k footprint marking D9 diode MHDR1X Schottky Diode Marking C3 planar transformer layout EI 33 transformer SiP11206DB SiP11206 MLP44-16 SiP11206DB SiP11206 Si7156DN SiP11206DB SiP11206 "EI CORE" SiP11206DB SiP11206 Capacitor Semiconductor SIM Model SiP11206DB SiP11206 d9 dl sot23 SiP11206DB SiP11206 CR3216-1206 SiP11206DB SiP11206 MHDR1X2 SiP11206DB SiP11206 SiP11206DB SiP11206DB SiP11206 SiP11206 TEXT
datasheet frame
Abstract: 7 C4 4.7uF/50V R1 7.15k C5 4.7uF/50V J4 VO 18V EN VDD FB SS 6 2 5 R2 C3 , ) 18VOUT 18VOUT Efficiency 8VIN 12VIN 12VIN VDD SS AGND PGND MLF and MicroLeadFrame are registered , VIN VDD EN AGND 1 2 3 4 8 7 6 5 PGND SW FB SS 8-Pin 2mm x 2mm MLF® (ML) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name VIN VDD EN AGND SS FB SW PGND Pin Function Supply (Input): 4.5V to 20V , (rising) Hysteresis 85 80 1.2 88 1.7 500 0.01 5 0.3 20 40 1.38 2.3 20 uA V V uA MHz MHz % °C °C ... Micrel Semiconductor
Original
datasheet

13 pages,
378.21 Kb

MIC2601/2 TEXT
datasheet frame
Abstract: (eGaN®) field effect transistor (FET), as well as the Texas Instruments LM5113 LM5113 gate driver , effect transistor (FET), as well as the Texas Instruments LM5113 LM5113 gate driver. Dead-Time Setting 2 , range. The demonstration board features the EPC2015 EPC2015 enhancement mode (eGaN®) field effect transistor , features the EPC2015 EPC2015 enhancement mode (eGaN®) field effect transistor (FET), as well as the Texas , ) 11 12 13 14 15 16 6 C24 VOUT J4 J3 0 1 2 3 4 5 6 ... Efficient Power Conversion
Original
datasheet

8 pages,
3969.85 Kb

EPC9107 TEXT
datasheet frame
Abstract: DOWN [ 7 CLOCK UP [ 7 03 (7 04 [7 vss [7 13] BORROW ji] CARRY ïï] MEèÉT EnaèLÉ 10] J3 3 J4 , /°C to 200mW Device Dissipation per Output Transistor. 100mW For Ta = Full Package , 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10nA V SS = 0V, IDD = 10(iA VDD = 2.8V, VIN = VDD o f , , IS S = -10uA V SS = 0V, IDD = 10(iA V SS = 0V, ID D = 10jiA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN , ,7,9 1,7,9 1,7,9 1,7, 9, Deltas 1,7,9 1,7,9, Deltas 2, 3, 8A, 88,10,11 1,2, 3, 7, 8A, SB, 9,10,11 1,2 ... OCR Scan
datasheet

12 pages,
386.8 Kb

CD40192BMS CD40193BMS TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Connector Locations W7 W4 W1 W2 W5 J1 J2 J3 J4 1 2 3 1 2 3 1 2 3 1 2 3 1 2 7 8 1 2 footprint J3 on probe board to J3 on dedication board J4 on probe board to J4 on dedication board is not used. W1 W2 J4 J3 1 2 3 1 2 OSCILLATOR OSCIN OSC DISABLE W3 W2 W1 W4 J2 J1 cable to J4 on the DB210 DB210 probe board and J4 on the dedica- tion board 10. Slide the dedication board Connector J2 Connector DEDICATION BOARD DB269 DB269 PROBE PIN 1 EDGES OF FLAT CABLES J4 Connector* J3
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6139-v3.htm
STMicroelectronics 11/01/2000 93.85 Kb HTM 6139-v3.htm
Locations W7 W4 W1 W2 W5 J1 J2 J3 J4 1 2 3 1 2 3 1 2 3 1 2 3 1 2 7 8 1 2 15 16 ST626X/9X ST626X/9X ST6220/25 ST6220/25 ST6221 ST6221 J4 on probe board to J4 on dedication board ST6208C ST6208C ST6209C ST6209C ST6210C ST6210C ST6220C ST6220C DB210 DB210 with DIL20 DIL20 W2 J4 J3 1 2 3 1 2 OSCILLATOR OSCIN OSC DISABLE W3 W2 W1 W4 J2 J1 1 2 1 2 1 2 3 1 2 OSCILLATOR OSCIN dedication board - Connect the other flat cable to J4 on the DB210 DB210 probe board and J4 on the dedica- tion CABLES J4 Connector* J3 Connector* * To emulate ST620x, ST21x and ST622x devices, use a DB210 DB210 probe and
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6139.htm
STMicroelectronics 20/10/2000 101.82 Kb HTM 6139.htm
* Library of Elantec op-amps, transistor arrays * $Revision j4 24 10 26 qf q2 21 21 25 qn q3 24 24 25 qp q5 1 21 22 qn q6 9 24 23 qp q7 26 26 27 qn .ends 15pF iss 2 12 0.48mA gosit 2 12 90 80 2.4e-4 * * Intermediate Stage * gcm 0 88 12 0 9.425e-9 ga 88 0 80 90 9.425e-4 r2 88 0 100K c2 91 88 30pF gb 91 0 88 0 28.6 ro2 91 0 74 * * Output Stage * rso 91 21 1 ecl 18 0 91 21 20.69 gcl 0 88 20 0 1 rcl 20 0 1K d1
/datasheets/files/spicemodels/misc/elantec.lib
Spice Models 04/09/2012 105.72 Kb LIB elantec.lib
* Library of Elantec op-amps, transistor arrays * $Revision j4 24 10 26 qf q2 21 21 25 qn q3 24 24 25 qp q5 1 21 22 qn q6 9 24 23 qp q7 26 26 27 qn .ends 15pF iss 2 12 0.48mA gosit 2 12 90 80 2.4e-4 * * Intermediate Stage * gcm 0 88 12 0 9.425e-9 ga 88 0 80 90 9.425e-4 r2 88 0 100K c2 91 88 30pF gb 91 0 88 0 28.6 ro2 91 0 74 * * Output Stage * rso 91 21 1 ecl 18 0 91 21 20.69 gcl 0 88 20 0 1 rcl 20 0 1K d1
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/elantec.lib
Spice Models 29/07/2012 105.77 Kb LIB elantec.lib
No abstract text available
/download/55885571-481534ZC/pdf.zip ()
Motorola 23/09/1996 2858.4 Kb ZIP pdf.zip
No abstract text available
/download/90212243-999460ZC/dbookold.zip ()
Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
No abstract text available
/download/35461760-365048ZC/1840a kit files.zip ()
Linear 05/01/2012 5189.59 Kb ZIP 1840a kit files.zip
No abstract text available
/download/22714395-365049ZC/1843a.zip ()
Linear 27/09/2012 3519.38 Kb ZIP 1843a.zip
No abstract text available
/download/41019255-595924ZC/code.lcd.demo.board.zip ()
NXP 16/03/2009 9306.17 Kb ZIP code.lcd.demo.board.zip
No abstract text available
/download/37338263-921974ZC/sprm337a.zip ()
Texas Instruments 06/08/2011 517.18 Kb ZIP sprm337a.zip