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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor j239

Catalog Datasheet MFG & Type PDF Document Tags

J133 mosfet transistor

Abstract: transistor j239 .9 Transistor 3 ZOL* 23.1 ­ j6.5 22.8 ­ j8.4 22.6 ­ j9.3 Z in ZOL* 19.7 ­ j27.8 22.0 ­ j23.9 22.5 ­ j25 , Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel , Volts Output Power - 2 Watts Per Transistor Power Gain - 15 dB Efficiency - 35% · Designed for , Gate­Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range Operating Junction , THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor Symbol RJC
Motorola
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J133 mosfet transistor transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor

J133 mosfet transistor

Abstract: J104 MOSFET Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Gate­Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range Operating Junction , THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor Symbol RJC , ) VGS(Q) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in Motorola
Motorola
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mosfet j133 j122 mosfet mosfet j122 transistor z5 9601 mosfet TRANSISTOR J15

transistor A113

Abstract: a113 transistor RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , - Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature , , Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Gps IRL P1dB No Degradation In
Freescale Semiconductor
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transistor A113 a113 transistor transistor marking z11 c series transistor equivalent table marking j9 j133 transistor MRF9002NT1

J133 mosfet transistor

Abstract: transistor j239 TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion , Transistor @ TC = 25°C PD 4 Watts Storage Temperature Range Tstg - 65 to +150 °C , CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor NOTE - CAUTION - MOS , dBm ON CHARACTERISTICS Freescale Semiconductor, Inc. FUNCTIONAL TESTS (Per Transistor in
Motorola
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ON SEMICONDUCTOR J122 motorola MOSFET 935 985 transistor motorola rf Power Transistor MOTOROLA TRANSISTOR 935 A113 MRF9002R2/D

J158

Abstract: MRF9002NR2 Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor , . Thermal Characteristics Characteristic Thermal Resistance, Junction to Case, Single Transistor Table , Semiconductor ARCHIVE INFORMATION Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm
Freescale Semiconductor
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J158 RO4350 J104 PFP-16
Abstract: Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial , Transistor Power Gain â'" 18 dB Efficiency â'" 50% â'¢ Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 , Per Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg -ā65 to +150 , , Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) VGS1 + C7 Z1 Z4 Z5 Freescale Semiconductor
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J133 mosfet transistor

Abstract: transistor 955 MOTOROLA MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC = , Resistance, Junction to Case, Single Transistor Symbol RJC Max 12 Unit °C/W NOTE ­ CAUTION ­ MOS devices , ) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in Motorola Test
Motorola
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transistor 955 MOTOROLA

power transistor unit j122

Abstract: Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 1000 MHz, 2 W , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness · , Rating Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage , Resistance, Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture , - - 0.3 4 5 - Vdc Vdc Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale
Freescale Semiconductor
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power transistor unit j122

J122 MARKING

Abstract: j239 Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed , 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · , Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system
Freescale Semiconductor
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J122 MARKING j239

motorola MOSFET 935

Abstract: J133 mosfet transistor MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL , station equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor , . MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Dissipation Per Transistor @ TC = , Resistance, Junction to Case, Single Transistor Symbol RJC Max 12 Unit °C/W NOTE ­ CAUTION ­ MOS devices , ) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in Motorola Test
Motorola
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sps transistor

transistor j239

Abstract: J133 mosfet transistor lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - , Gate-Source Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 , Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level , dBm Characteristic On Characteristics Functional Tests (Per Transistor in Freescale Test
Freescale Semiconductor
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transistor marking z9 z14 b marking J239 TRANSISTOR mosfet TRANSISTOR J133 J239 marking transistor Z6
Abstract: lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array N , Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency  , Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg - 65 to +150 °C , Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Common-Source Amplifier Power Freescale Semiconductor
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ON SEMICONDUCTOR J122

Abstract: POWER MOSFET RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain-Source Voltage Gate-Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range , to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level Test , Vdc Vdc Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale Test Fixture, 50
Freescale Semiconductor
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J239

Abstract: motorola J122 Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion Phase Flatness , Vdc Gate­Source Voltage VGS ­0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25 , Characteristic Thermal Resistance, Junction to Case, Single Transistor MOISTURE SENSITIVITY LEVEL Test , CHARACTERISTICS FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system) Common­Source
Motorola
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motorola J122

motorola rf Power Transistor

Abstract: Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case, Single Transistor , (th) VGS(Q) VDS(on) 2.4 3 - - - 0.3 4 5 - Vdc Vdc Vdc FUNCTIONAL TESTS (Per Transistor in
Motorola
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J133 mosfet transistor

Abstract: marking transistor RF POWER MOSFET RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET , Volts Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for , Drain- Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage , Resistance, Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture , Vdc Symbol Min Typ Max Unit Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm
Freescale Semiconductor
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marking transistor RF

marking us capacitor pf l1

Abstract: marking Z4 Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10 , VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage , Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per , Freescale Semiconductor LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 RF Power Field Effect Transistor Array , 37 - dBm Characteristic Functional Tests (Per Transistor in Freescale Test Fixture, 50
Freescale Semiconductor
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marking us capacitor pf l1 marking Z4

NI-780S

Abstract: CRCW251220R Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 NOT RECOMMENDED FOR NEW DESIGN N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle , NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF6V10250HSR3 1 Table 3 , .04 4.3 - j2.72 1030 2.39 - j2.23 5.66 - j2.42 1090 3.26 - j3.72 5.85 - j2.39
Freescale Semiconductor
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NI-780S CRCW251220R AN1955

A114

Abstract: A115 Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 1, 6/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty , Transistor MRF6V10250HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class B , .23 5.66 - j2.42 1090 3.26 - j3.72 5.85 - j2.39 Zsource = Test circuit impedance as measured
Freescale Semiconductor
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A114 A115 C101 JESD22 nh TRANSISTOR C1447-0

RO3010

Abstract: j352 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large­signal, common source amplifier applications in 28/32 volt transmitter equipment. · , = 130 Watts (PEP) f MHz 845 860 875 Zin 3.33 + j2.42 3.03 + j2.39 2.73 + j3.10 ZOL* 4.56 + j2
Motorola
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RO3010 j352 transistor j352 bc17a VJ2225Y MRF374A MRF374
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