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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor irf 649

Catalog Datasheet MFG & Type PDF Document Tags

ksd 302 250v, 10a

Abstract: irf 5630 .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor, depletion type Field-effect
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Leaded Magnetics and Inductors

Abstract: IRF power mosfets catalog . 28 IRF, Inductors, epoxy conformal coated, uniform roll coated . 31 IRF-24, Epoxy conformal coated, axial leaded . 33 IRF-36, Epoxy conformal coated, axial leaded . 34 IRF-46, Epoxy conformal coated, axial leaded . 35 IRF-24, 36, 46 PACKAGING SPECS
Vishay Dale
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transistor irf 649

Abstract: 8 GHz VCO . TYP. MAX. UNIT V dd Vcc ! dd + !cc lcc(pd) + lüD(pd) ÎRF fxlal fpc Tamb digital supply voltage , enabled (disabled) via the serial interface by setting bit OOL HIGH (LOW). An open drain transistor drives , power-down mode R F m a i n d i v i d e r i n p u t ; pi n 5 ÎRF VRF(rms) Rm Zi RF input frequency , capacitance fRF = 1 GHz îrf 300 Rs = 50 d - 2200 225 131 071 - MHz mV 50 512 - 750 130 , , T E L A V IV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PH ILIPS S E M IC O N D U C TO
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a6403

Abstract: fxTAL lo(PNP) Ptot Tstg Tamb ÎRF supply voltage supply current crystal oscillator input frequency PNP , ) (measured in circuit of Fig. 19; unless otherwise specified) VHF MIXER (INCLUDING IF AMPLIFIER) ÍRF Gv NF RF frequency voltage gain note 1 f RF = 57.5 MHz; see Fig.12 Í rf = 357.5 MHz; see Fig.12 noise figure írf írf , (INCLUDING IF AMPLIFIER) ÍRF Gv NF RF frequency voltage gain note 1 Í rf = 369.5 MHz; see Fig.16 Í rf = 803.5 , (worst case in the frequency range); ripple frequency 500 kHz; note 7 îrf îrf îrf TDA6402; TDA6402A
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a6403 TDA6403 TDA6403A TSA5526

transistor irf 649

Abstract: diode Z2 018 switching regulator with an integrated 1.4A power transistor. Its high switching frequency (programmable up , transistor. Connect to the boost inductor and the rectifying diode. 8 IN 9 ROSC 10 SS , switching regulator with an integrated power transistor. As shown in the block diagram in Figure 2, the power transistor is turned on at the trailing edge of the clock. Switch current is sensed with an , becomes valid, the softstart capacitor is charged with a 1.5µA current source. A PNP transistor clamps
Semtech
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SC4502H transistor irf 649 diode Z2 018 roc4 10BQ015 CDRH5D28 DO1813P SC4502/SC4502H IHLP-2525BD MLPD-10

transistor irf 649

Abstract: Z1 Transistor 6 pin integrated 1.4A power transistor. Its high switching frequency (programmable up to 2MHz) allows the use of , connected. Collector of the internal power transistor. Connect to the boost inductor and the rectifying , integrated power transistor. As shown in the block diagram in Figure 2, the power transistor is turned on at , transistor clamps the output of the error amplifier as the soft-start capacitor voltage rises. Since the COMP , allow for modulating headroom. converter is therefore The power transistor inside the SC4502/SC4502H is
Semtech
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Z1 Transistor 6 pin

IRF 544 N MOSFET

Abstract: 4af2NPP IR range is out­ standing. The net result is a radically advanced power transistor of univer­ sal , on-resist­ ance and the high-voltage character­ istics of a true power transistor could not be , '" f GATE 6 6 EMITTER SOURCE (a) NPN BIPOLAR TRANSISTOR (a) BIPOLAR TRANSISTOR , is to be taken of the MOSFEiTsâ'™ special perform­ ance features. Figure 3. Bipolar Transistor , collector, base and emitter ter­ minology for the terminals of a bipolar transistor are replaced by drain
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IRF 544 N MOSFET 4af2NPP IR transistor D586 Spice 2 computer models for hexfets jrc 2115 equivalent gi 9424 diode

Dt3 dual transistor

Abstract: (LOW). An open drain transistor drives the output pin LOCK (pin 20). It is recommended that the pull-up , input signal level (RMS value) main divider ratio input impedance (real part) îrf 300 Rs = 50 £2 50 , Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS
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Dt3 dual transistor UMA1021M SCA51

transistor irf 649

Abstract: BH510-1006 a small-signal NPN pass transistor or a single resistor. The voltage of the power input can be as , external small-signal NPN transistor to limit the power loss in the PIN shunt regulator when the input
Analog Devices
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ADP1621 BH510-1006 FZ 89 1500 6.3V 50-ZL-220-M-10 GRM31CR60J476M 6TPE150M FDV0630-4R7M 7882DP SSA33L

TRANSISTOR C 6090 npn

Abstract: TRANSISTOR C 6090 2048 clock cycles Figure 2. Efficiency of Circuit Shown in Figure 1 NPN pass transistor or a , separating the two inputs, PIN can be driven with an external small-signal NPN transistor to limit the power
Analog Devices
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TRANSISTOR C 6090 npn TRANSISTOR C 6090 IRF7470 M200 rubycon 47uF 50V M400 10MQ100 ADP1610 ADP1611 MO-187-BA RM-10 ADP1621ARMZ

TRANSISTOR C 6090 npn

Abstract: TRANSISTOR C 6090 Figure 2. Efficiency of Circuit Shown in Figure 1 NPN pass transistor or a single resistor. The , transistor to limit the power loss in the PIN shunt regulator when the input voltage is higher than 5.5 V
Analog Devices
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FZ 87 1500 6.3V RUBYCON M 194 50ZL330M10x23 Polymer capacitor 700V SDSN Si7882DP ADP1621ARMZ-R71 ADP1621-EVAL D06090-0-12/06

VOGT 406 69

Abstract: vogt 545 23 194 00 IRF shares standing 30 percent above the March offering price, we raised an additional $533 million , Sep Oct Nov Dec Jan Feb Fiscal 2000 IRF Philadelphia Semiconductor Index (SOX
International Rectifier
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VOGT 406 69 vogt 545 23 194 00 IRF 9234 rectificadores vogt 406 47 VOGT 504 07 005 00

transistor tt 2170

Abstract: hudi IRF/LR110 90524/633 IRFL4310 91368 IRFR120N 91365 IRLR120N IRFR3910 91364 IRF9Z14* 90736 IRF510 90325 IRF520N 91339 IRL520N 91494 IRF530N 91351 IRL530N 91348 IRF540N 91341 IRF9Z14S* 90911 IRF/L510S 90895/907 , 1.500 0.800 0.400 IRFR210 90526 IRFR220 90525 IRF610 90326 IRF620 90317 IRF630 90309 IRF/L640 90374/1089 IRF610S 90899 IRF620S 90900 IRF630S 90901 IRF640S 90902 IRF/LI620G 90832/1235 IRF/LI630G 90652/1236 IRF/LI640G 90649/1237 IRFP240 90444 IRFP250 90443 IRFP260 90755 200V 0.180 0.085 0.055
Renesas Technology
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HD64F2170 transistor tt 2170 hudi Nippon capacitors REJ09B0149-0200Z H8S/2172G H8S/2170 D-85622

HD64F2170

Abstract: Higher Currents to Minimize R0 Variations. - Series Output Resistors Included to Swamp Transistor R0. - , circuit design, because each transistor is fully isolated from other transistors and the substrate. The UHF-1 process owes much of its speed to the much smaller transistor size, compared with previous complementary processes. The smaller transistor size is also what limits the supply voltages to +5V instead of + 15V for the previous processes. The UHF-1 transistor speed is also increased by minimizing "stray
Hitachi Semiconductor
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H8S/2172

transistor tt 2170

Abstract: ep3285 â¡ BFP 196 12 100 700 7.2 1.35 16 0.9 SOT-143 649 â¡ BFP 280 8 10
Renesas Technology
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ep3285

sumida 94V-0

Abstract: inverter using irfz44n 6.4.8 PCI Parity Disable Register . . . . . . . . . . . . . 6.4.9 Window Base Registers . . . . . . . , 6­48 6­49 6­50 6­51 6­51 6­51 6­52 6­52 6­52 6­52 6­52 6­53 6­53 6­53 6­53 6­53 6­53 , . . . . . . . . . . . . . 6­40 6­42 6­43 6­44 6­44 6­46 6­47 6­48 6­49 6­50
Maxim Integrated Products
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sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F

pin configuration NPN transistor BC157

Abstract: MAX9690 . 390 8.6.5 Enabling Interrupt Requests when IRF = 1 in EDMDR
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pin configuration NPN transistor BC157 MAX9690 transis C123 IRF TRANSISTOR SUBSTITUTION matched pair JFET HA-5320 cross reference
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