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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor h331

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transistor h331

Abstract: pal 011 A SPEAKER OUTPUT IC transistor storage time. Three time constants for the first PLL. · the long time constant is used for normal , 130 ma BEAM CU RREN T LIMITER VO LTAGE (Pin 31) V t H1-31 V t H2-31 V t H3-31 Contrast
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STV2216 transistor h331 pal 011 A SPEAKER OUTPUT IC H331 transistor bsc 60h flyback bsc 60h flyback tv STV8223 TDA1771 STV2180

H331 transistor

Abstract: transistor h331 the poly electrode transistor (PET) structure which utilizes p + polysilicon for extrinsic base doping , the cell has a two-emitter transistor that allows twice the output emitter follower current to be , 2 L/H324 5-5-5-5 AND/OR FULL CELL 1 L/H331 3-2-2 AND/OR 1/2 CELL 2 L/H332 GATED OR 1/2 CELL 2 L
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data sheet transistor h331 ZX-03 L817 exnor H375 Dual 4-1 MUX MCA2200ECL/D MCA2200ECL 120-Q

bsc 60h flyback

Abstract: transistor storage time. - Field frequency selection windows : [248,288] 6 0 H z m o d e s e le c tio n , V t H2-31 Brightness Attenuation Starting 5.5 V V t H3-31 CTR-BCL V t H4
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A8174

H331 transistor

Abstract: transistor h331 . Figure 4 contains a cross section diagram of a Schottky transistor. With the Schottky module, high , requirements and limitations. FIGURE 4 - CROSS SECTION OF MOSAIC III SCHOTTKY TRANSISTOR Emitter Schottky , connections for the three-level series gated macro. Each output of the cell has a two-emitter transistor that
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MCA750ETL MCA3200ETL HE02 HB26 750ETL L713 L322 ht33 transistor MCA6200

H331 transistor

Abstract: transistor h331 improvement over MOSAIC II is the use of the poly electrode transistor (PET) structure which utilizes p + , three-level series gated macro. Each output of the cell has a two-emitter transistor that allows twice the , /EXOR (LPA ONLY) 1/2 CELL 2 L/H331 3-2-2 AND/OR 1/2 CELL 2 L/H332 GATED OR 1/2 CELL 2 L/H333 GATED OR
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MCA10000ECL 10000 series of ECL gates L892 MCA2500ECL ZX51 HX71 H254 MCA10000ECL/D
Abstract: use of the poly electrode transistor (PET) structure which uti­ lizes p + polysilicon fo r , macro. Each output o f the cell has a tw o-em itter transistor that allows tw ice the o u tp u t e m , 3-2-2-2 2-3 AND/OR 5-5-5-5 AND/OR L/H331 L/H332 L/H333 L/H370 L/H371 3-2-2 AND/OR GATED OR -
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ZX03

Abstract: L328 use of the poly electrode transistor (PET) structure which utilizes p+ polysilicon for extrinsic base , three-level series gated macro. Each output of the cell has a two-emitter transistor that allows twice the , /EXOR (LPA ONLY) 1/2 CELL 2 L/H331 3-2-2 AND/OR 1/2 CELL 2 L/H332 GATED OR 1/2 CELL 2 L/H333 GATED OR
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ZX03 L328 LH5022 H803 aluminum nitride column grid array H502

yd 803 ic

Abstract: yd 803 ou equivalent contains a cross section diagram of a Schottky transistor. W ith the Schottky m odule, high perform ance TTL inp uts and o utputs are possible. CROSS SECTION OF MOSAIC III SCHOTTKY TRANSISTOR DESIGN
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yd 803 ic yd 803 ou equivalent H711 ula 1u h692l CHN 708

A434 RF MODULE

Abstract: JESD31 , Triac, Transistor and Power Supply Assemblies High Current-High Surge-High Voltage Open Board
DEPARTMENT OF DEFENSE
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A434 RF MODULE JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode MIL-PRF-38535 MIL-PRF-38535J RD-650