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Part Manufacturer Description Datasheet BUY
LM1117IMPX-3.3 Texas Instruments 800mA Low-Dropout Linear Regulator 4-SOT-223 -40 to 125 visit Texas Instruments
TLV1117LV28DCYT Texas Instruments 1-A, Positive Fixed Voltage, Low-Dropout Regulator 4-SOT-223 -40 to 125 visit Texas Instruments
REG1117-3.3/2K5G4 Texas Instruments 1A Low Dropout Positive Regulator 4-SOT-223 0 to 125 visit Texas Instruments
REG1117A/2K5 Texas Instruments 1A Low Dropout Positive Regulator 4-SOT-223 0 to 125 visit Texas Instruments
REG1117A-2.5G4 Texas Instruments 1A Low Dropout Positive Regulator 4-SOT-223 0 to 125 visit Texas Instruments
TLV1117LV33DCYT Texas Instruments 1-A, Positive Fixed Voltage, Low-Dropout Regulator 4-SOT-223 -40 to 125 visit Texas Instruments

transistor gl 1117

Catalog Datasheet MFG & Type PDF Document Tags

DIN 1415-1

Abstract: philips for ic 7404 /DISCRETE b7E D NPN 5 GHz wideband transistor £= BFR92A FEATURES PINNING High power gain PIN DESCRIPTION , 3 collector DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for , PHILIPS/DISCRETE b7E 1>- NPN 5 GHz wideband transistor BFR92A THERMAL RESISTANCE SYMBOL PARAMETER , PHILIPS/DISCRETE b7E P NPN 5 GHz wideband transistor Product specification BFR92A 2 2nF LI 1 nF 75n , AMER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor Product specification BFR92A
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BFT92 MSB003 DIN 1415-1 philips for ic 7404 transistor gl 1117 transistor c 4106 433-2 npn 017 545 71 32 02 S3T31

transistor gl 1117

Abstract: MGP485 DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File , VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in , 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load , 175 s.s.b. (class-AB) 12,5 1,6-28 MODE OF OPERATION PL W GL dB 45 > 5,0 3-30 , Philips Semiconductors Product specification VHF power transistor BLW60C RATINGS Limiting
Philips Semiconductors
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MSB056 MGP485 Transistor gl 1117 B IEC 320 C13 MGP480

transistor gl 1117

Abstract: trimmer 3-30 pf DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance , OF OPERATION PL W GL dB 45 > 5,0 3-30 (P.E.P.) typ. 19,5 PIN CONFIGURATION %
Philips Semiconductors
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trimmer 3-30 pf

nf025

Abstract: NE27283 CC=4.2mA@f=1000MHz G P=23dB, ISL=40dB, P o(1dB)=­4.5dBm, NF=3.5dB, I CC=5.6mA@f=1000MHz GL=11dB, P o , =21dBm, Padj =­60dBc NF=7.0dB, GL=18.5dB NF=6.5dB, GL=22.0dB NF=7.0dB, GL=18.5dB NF=6.5dB, GL=22.0dB NF=7.0dB, GL=18.0dB NF=7.0dB, GL=21.5dB NF=7.0dB, GL=18.5dB NF=6.5dB, GL=21.5dB Package 8-pin SSOP 7 , X13769XJ2V0CD00 11-13 RF and Microwave Devices IC s Transistor Array (µPA ×××) Part Number , X13769XJ2V0CD00 11-17 RF and Microwave Devices Discrete s Twin TR. (µ PA×××) Part Number Applications
NEC
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nf025 NE27283 upc27 x-band power transistor 100W P147D NE42484 950MH 500MH PC8119T PC8120T PC8130TA PC8131TA

2SC5752

Abstract: 2SC5752-T1 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES · Ideal for medium output power , 13.0 - dB GL VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = -5 dBm - 12.5 - dB , 1.089 1.117 1.118 1.132 1.131 1.138 1.125 1.129 1.101 12.85 12.60 12.00 11.70 11.26 , -169.9 -172.1 -175.7 -177.7 1.076 1.090 1.103 1.102 1.117 1.111 1.119 1.119 1.120 1.125
NEC
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2SC5752-T1

TC7212

Abstract: binary to led display decoder [ T 3 Ì1 CI Gl [ T M l 81 G1 [ T m fi i t 3 7 l A1 FI I T BP I T 3 6 l , A3 11-17 2341 F -1 2 QT 2 ? | 82 g bi 13 80 2Ã1 F4 2 T g4 ~24l E4 2 3 , MOS transistors. A brightness input (pin 5) can be used in two ways to control output transistor drain current. The voltage at the brightness control input is transferredto the output transistor gate
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TC7212 binary to led display decoder DDG7707 TC7211AM TC7212AM TC7211A

p1565

Abstract: 2SC5751 NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · Ideal for medium output power amplification · PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm · HFT3 technology (fT = 12 GHz , Power Collector Efficiency GL PO (1 dB) 15.5 15.0 50 dB dBm % C Notes 1. Pulse , 14.05 13.84 13.61 13.44 13.29 13.19 13.07 12.99 12.93 12.95 12.97 13.04 11.17 10.59 10.00 9.71 9.40 8.88
California Eastern Laboratories
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p1565 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS00 P15657EJ1V0DS

2SC5752

Abstract: 2SC5752-T1 NPN RF NPN Silicon RF Transistor 2SC5752 NPN RF 60 mW 4 PO (1 dB) = 18.0 dBm TYP. @ , , IC = 30 mA, f = 2 GHz ­ 13.0 ­ dB GL VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = , -144.4 -148.0 -151.2 -154.5 -157.9 -160.8 -163.4 1.095 1.089 1.117 1.118 1.132 1.131 1.138 , -169.9 -172.1 -175.7 -177.7 1.076 1.090 1.103 1.102 1.117 1.111 1.119 1.119 1.120 1.125
NEC
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P15658JJ1V0DS00 P15658JJ1V0DS

transistor gl 1117

Abstract: IDT75C19x100 refer ence for the current sources in the DAC. The feedback loop inter nally includes a transistor which , recommended operating conditions, unless otherwise stated. SYMBOL ELI ELD IOF EG TCG BWR DP DG PSRR PSS GC Gl , . 1 1 11-17 IDT75C19 9-BIT CMOS VIDEO DAC MILITARY AND COMMERCIAL TEMPERATURE RANGES MIN
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IDT75C19x100 DSC5001 LM113 equivalent TDC1018 125MH MIL-STD-883 RS-343A 1DT75C19 LM113

nec 14305

Abstract: 2SC5751 NPN RF NPN Silicon RF Transistor 2SC5751 NPN RF 30 mW 4 PO (1 dB) = 15.0 dBm TYP , 0.5 pF VCE = 3 V, IC = 20 mA, f = 2 GHz ­ 16.0 ­ dB GL VCE = 2.8 V, ICq = 8 mA , 1.287 1.348 1.352 1.419 12.93 12.95 12.97 13.04 11.17 10.59 10.00 9.71 9.40 8.88 3.0
NEC
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2SC5751-T2 P15657JJ1V0DS nec 14305 P15657JJ1V0DS00

GL 7812

Abstract: 2SC5750-T1 NPN RF NPN Silicon RF Transistor 2SC5750 NPN RF 30 mW 4 PO (1 dB) = 15.0 dBm TYP. @ , , IC = 20 mA, f = 2 GHz ­ 15.0 ­ dB GL VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = , 1.077 1.093 1.117 1.122 1.138 1.139 1.152 1.152 21.76 20.66 19.62 18.90 18.12 17.54
NEC
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2SC5750-T1 GL 7812 transistor NEC 7812 P15656JJ1V0DS00 P15656JJ1V0DS

4pin ic 807 1010 410

Abstract: 2SC5752 . DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER , dB GL VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Pin = -5 dBm - 12.5 - dB PO (1 dB , -133.0 -137.0 -140.9 -144.4 -148.0 -151.2 -154.5 -157.9 -160.8 -163.4 1.095 1.089 1.117 , -169.9 -172.1 -175.7 -177.7 1.076 1.090 1.103 1.102 1.117 1.111 1.119 1.119 1.120 1.125
Renesas Electronics
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4pin ic 807 1010 410 9 140 010 044

transistor marking R57 ghz

Abstract: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · Ideal for 460 MHz to 2.4 GHz medium output power amplification · PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm · High , dBm % Note 2 Note 3 MAG GL PO (1 dB) C Notes 1. Pulse measurement: PW 350 s, Duty , 1.787 1.706 1.621 1.546 1.464 1.397 1.333 1.271 1.222 0.884 0.677 MAG. S21 ANG. (deg.) 134.3 111.7 101.4
California Eastern Laboratories
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transistor marking R57 ghz NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS P15573EJ1V0DS00

LDR 03

Abstract: LDR05 591 XP 1117 189 LÃH 05 25 PL 5822 A 627 XP 1118 189 LDR 07 27 PL 6011 591 XP 1120 195 OA 2 , 529 ORP Gl 37 XP 1002 159 ZA 1004 5 33 ORP G2 41 XP 1003 159 ZA 1005 539 ORP 03 47 XP 1004
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LDR 03 LDR05 valvo handbuch valvo handbuch rohren ORP60 valvo 18504
Abstract: transistor · Low pow er consumption in active mode with respect to TTL type tim ers · High precision due to , HIGH) positive supply voltage Fig.1 Pin configuration. RS ( T r tc u jD VCC Gl 15] MR , of driving a power transistor. The output time delay is calculated using the following formula , pulse width and the m aximum clock frequency. September 1993 1117 Philips Semiconductors -
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74HC/HCT5555

nec 14305

Abstract: 14305 NEC DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES · Ideal for medium output power amplification · PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm · HFT3 , - 0.22 0.5 pF VCE = 3 V, IC = 20 mA, f = 2 GHz - 16.0 - dB GL VCE = , 0.987 1.100 1.184 1.287 1.348 1.352 1.419 12.93 12.95 12.97 13.04 11.17 10.59 10.00 9.71
NEC
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14305 NEC k 3918 TRANSISTOR OF IC 7909

nec japan 7812

Abstract: NEC 7812 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES · Ideal for medium output power amplification · PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm · HFT3 technology (fT = 12 , 15.0 - dB GL VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = -10 dBm - 14.5 - dB , 1.117 1.122 1.138 1.139 1.152 1.152 21.76 20.66 19.62 18.90 18.12 17.54 16.92 16.45
NEC
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nec japan 7812 NEC 7812 7812 nec k 3531 transistor R54 Transistor P15656EJ1V0DS00

RCA SK CROSS-REFERENCE

Abstract: CD4003 loading effects and longer transistor life and circuit reliability. Thermal mating of matched , cost­ ing less than 150 per transistor â'" while the new N PN types, the MPS-A13/ A 14, cost even , Options With the introduction of the MMT3823 RF N-Channel JF E T - the first field-effect transistor to
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RCA SK CROSS-REFERENCE CD4003 250PA120 pa189 2N2505 2N3017

transistor gl 1117

Abstract: NEC NESG2101M05 NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz · LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz · HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz · , ZSOPT, ZL = ZLOPT dB 0.6 Ga RF GL NF Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 , 16.92 16.63 16.36 16.09 15.11 14.56 14.02 13.61 13.23 12.89 12.26 11.69 11.17 10.73 10.31
California Eastern Laboratories
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NEC NESG2101M05 1GP20 IC 7408 re 10019 NESG2101M05-T1 S21E

transistor T1J

Abstract: bjt npn NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE , P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB , 16.92 16.63 16.36 16.09 15.11 14.56 14.02 13.61 13.23 12.89 12.26 11.69 11.17 10.73 10.31 8.62 7.33 6.25
California Eastern Laboratories
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transistor T1J bjt npn NEC 9319
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