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transistor f52

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FStructure PNP digital transistor (Built-in resistor type) 1/4 LESHAN RADIO COMPANY, LTD , 0V Vo = -5V,Io=-50 mA VCE = -10V,IE = 5m A,f = 100MHZ 100MHZ* DEVICE MARKING LDTB123YLT1G LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G LDTB123YLT3G F52 10000/Tape&Reel 2/4 LESHAN RADIO COMPANY, LTD. LDTB123YLT1G LDTB123YLT1G Electrical ... Leshan Radio Company
Original
datasheet

4 pages,
207.05 Kb

transistor f52 TEXT
datasheet frame
Abstract: requirements. LDTB123YLT1G LDTB123YLT1G 3 1 2 SOT­23 FEquivalent circuit FStructure PNP digital transistor , ,f = 100MHZ 100MHZ* DEVICE MARKING LDTB123YLT1G LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G LDTB123YLT3G F52 10000/Tape&Reel 2/4 ... Leshan Radio Company
Original
datasheet

6 pages,
448.64 Kb

LDTB123YLT3G 100MHZ LDTB123YLT1G transistor f52 TEXT
datasheet frame
Abstract: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · · LDTB123YLT1G LDTB123YLT1G Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting , RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123YLT1G LDTB123YLT1G F52 2.2 10 3000/Tape & Reel LDTB123YLT3G LDTB123YLT3G F52 2.2 10 10000/Tape & Reel Electrical characteristics ... Leshan Radio Company
Original
datasheet

3 pages,
285.65 Kb

LDTB123YLT3G LDTB123YLT1G TEXT
datasheet frame
Abstract: de vice design easy. ·S tru c tu re PNP digital transistor (Built-in resistor type) DTB123YC DTB123YC 2 .9 ± , have same dimensions (1) GND (2) IN (3) OUT Addreviated symbol : F52 0.95+0.2 0 .4 5 ± 0 .1 , ) IN Addreviated symbol: F52 DTB123YS DTB123YS 4±0 .2 (3) OUT r- i ·E q u iv alen t circuit , * Transition frequency of mounted transistor Transistors ·E le c tric a l characteristic curves ... OCR Scan
datasheet

3 pages,
102.46 Kb

transistor f52 DTB123YC TEXT
datasheet frame
Abstract: AGi56 symbol : F52 DTB123YK DTB123YK 2.9 Structure PNP epitaxial planar silicon transistor (Resistor , Abbreviated symbol : F52 Part No. Basic ordering unit (pieces) 3000 3000 - DTB123YU DTB123YU - , - - VCE= -10V, IE= 50mA, f= 100MHz Characteristics of built-in transistor Electrical ... ROHM
Original
datasheet

3 pages,
133.36 Kb

transistor f52 T146 T106 DTB123YU DTB123YK TEXT
datasheet frame
Abstract: conditions need to be set fo r o peration, m aking de vice design easy. ·S tru ctu re PNP digital transistor , v ia te d s y m b o l: F52 (3) OUT DTB123YC DTB123YC 2,9± 0.2 1.9± 0.2 0 .95+ g if n ROHM : SST3 , symbol : F52 DTB123YS DTB123YS 2±0.2 (1) GND (2) IN (3) OUT M ·E q u iva le n t circuit 1 1,0 n .4 AG5 , =5mA, f=100MHz * * Transition frequency of mounted transistor ·P a cka g in g specifications ... OCR Scan
datasheet

4 pages,
87.27 Kb

TEXT
datasheet frame
Abstract: Abbreviated symbol : F52 Structure PNP digital transistor (Built-in resistor type) 4 ± 0.2 2 ± 0.2 , DTB123YU DTB123YU / DTB123YK DTB123YK / DTB123YS DTB123YS Transistors Digital transistors (built-in resistor) DTB123YU DTB123YU / DTB123YK DTB123YK / DTB123YS DTB123YS 2.0 1.3 (1) 0.3 (3) (2) DTB123YU DTB123YU 0.65 0.65 External dimensions (Unit : mm) 1.25 0.2 2.1 ROHM : UMT3 EIAJ : SC-70 SC-70 0.1Min. (1) GND (2) IN (3) OUT 0.9 0.7 0.15 Each lead ha same dimensions Abbreviated symbol : F52 2.9 ± 0.2 ... ROHM
Original
datasheet

4 pages,
64.47 Kb

T146 T106 SC-72 DTB123YU DTB123YS DTB123YK DTB123Y TEXT
datasheet frame
Abstract: DTB123YK DTB123YK Digital transistor, PNP, with 2 resistors Features available in SMT3 (SMT, SC-59 SC-59) package package marking: DTB123YK DTB123YK; F52 a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film resistor which is completely , circuits is simple because only ON and OFF conditions have to be set Applications · transistor switch , FVR, h Vqe = - 10 V, 1^ = 50 mA, f = 100 MHz, characteristics of built-in transistor ... OCR Scan
datasheet

3 pages,
75.53 Kb

transistor 531 transistor MARKING CODE RJ DTB123YK SC-59 TEXT
datasheet frame
Abstract: SHARP ELEK/ MELEC DIV 1SE o| 01307^3 ooanbi 1 J 7-Unit 400mA Darlington Transistor Array IR2C19/IR2C19N IR2C19/IR2C19N IR2C19/IR2C19N IR2C19/IR2C19N ~f-52 - i3~l/5 7-Unit 400mA Darlington Transistor Array ■ Description The IR2C19/IR2C19N IR2C19/IR2C19N is a 7-circuit driver. The internal clamping diodes enable the IC to drive the , , TÖJVcc Top View SHARP' 77 SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 1SE D I , Input "Low" voltage V,L 0.4 V 78 SHARP' SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor ... OCR Scan
datasheet

3 pages,
183.66 Kb

SM550 sharp SM550 IR2C19N IR2C19 SM5* sharp IR2C19/IR2C19N TEXT
datasheet frame
Abstract: Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 180 8 8 3,000 3,000 Marking F52 F52 , built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co., Ltd ... ROHM
Original
datasheet

7 pages,
506 Kb

marking F52 DTB123Y TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/84839171-740326ZC/20879.pl
SGS-Thomson 07/08/1995 487.12 Kb PL 20879.pl
logic zero, the N-channel transistor is off, while the P-channel is on and can conduct. The opposite transistor in order to avoid floating conditions. For other pins this is intrinsically forbidden, like for posed to illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct highlight that physically the P-channel transistor is still present, so the diode to V DD works. In
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6993.htm
STMicroelectronics 09/02/2001 749.42 Kb HTM 6993.htm
zero, the N-channel transistor is off, while the P-channel is on and can conduct. The opposite internal weak pull-up transistor in order to avoid floating conditions. For other pins this is conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to V DD important to highlight that physically the P-channel transistor is still present, so the diode to V
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6993-v2.htm
STMicroelectronics 26/01/2001 725.04 Kb HTM 6993-v2.htm
When an input is kept at logic zero, the N-channel transistor is off, while the P-channel is on and can enables an internal weak pull-up transistor in order to avoid floating conditions. For other pins this is posed to illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct highlight that physically the P-channel transistor is still present, so the diode to V DD works. In
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6993-v1.htm
STMicroelectronics 20/10/2000 733.23 Kb HTM 6993-v1.htm