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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor f52

Catalog Datasheet MFG & Type PDF Document Tags

transistor f52

Abstract: FStructure PNP digital transistor (Built-in resistor type) 1/4 LESHAN RADIO COMPANY, LTD , 0V Vo = -5V,Io=-50 mA VCE = -10V,IE = 5m A,f = 100MHZ* DEVICE MARKING LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G F52 10000/Tape&Reel 2/4 LESHAN RADIO COMPANY, LTD. LDTB123YLT1G Electrical
Leshan Radio Company
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transistor f52 3000/T 10000/T

transistor f52

Abstract: LDTB123YLT1G requirements. LDTB123YLT1G 3 1 2 SOT­23 FEquivalent circuit FStructure PNP digital transistor , ,f = 100MHZ* DEVICE MARKING LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G F52 10000/Tape&Reel 2/4
Leshan Radio Company
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3000PCS/R 8000PCS/R 30KPCS/I 80KPCS/I 360KPCS/C 960KPCS/C

LDTB123YLT1G

Abstract: LDTB123YLT3G LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · · LDTB123YLT1G Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting , RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123YLT1G F52 2.2 10 3000/Tape & Reel LDTB123YLT3G F52 2.2 10 10000/Tape & Reel Electrical characteristics
Leshan Radio Company
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transistor f52

Abstract: de vice design easy. ·S tru c tu re PNP digital transistor (Built-in resistor type) DTB123YC 2 .9 ± , have same dimensions (1) GND (2) IN (3) OUT Addreviated symbol : F52 0.95+0.2 0 .4 5 ± 0 .1 , ) IN Addreviated symbol: F52 DTB123YS 4±0 .2 (3) OUT r- i ·E q u iv alen t circuit , * Transition frequency of mounted transistor Transistors ·E le c tric a l characteristic curves
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DTB123YK SC-59 SC-72 96-302-B123Y DTB123YD

transistor f52

Abstract: DTB123YK symbol : F52 DTB123YK 2.9 Structure PNP epitaxial planar silicon transistor (Resistor , Abbreviated symbol : F52 Part No. Basic ordering unit (pieces) 3000 3000 - DTB123YU - , - - VCE= -10V, IE= 50mA, f= 100MHz Characteristics of built-in transistor Electrical
ROHM
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T106 T146 AGi56 SC-70 R0039A
Abstract: conditions need to be set fo r o peration, m aking de vice design easy. ·S tru ctu re PNP digital transistor , v ia te d s y m b o l: F52 (3) OUT DTB123YC 2,9± 0.2 1.9± 0.2 0 .95+ g if n ROHM : SST3 , symbol : F52 DTB123YS 2±0.2 (1) GND (2) IN (3) OUT M ·E q u iva le n t circuit 1 1,0 n .4 AG5 , =5mA, f=100MHz * * Transition frequency of mounted transistor ·P a cka g in g specifications -
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HO-15

T146

Abstract: DTB123Y Abbreviated symbol : F52 Structure PNP digital transistor (Built-in resistor type) 4 ± 0.2 2 ± 0.2 , DTB123YU / DTB123YK / DTB123YS Transistors Digital transistors (built-in resistor) DTB123YU / DTB123YK / DTB123YS 2.0 1.3 (1) 0.3 (3) (2) DTB123YU 0.65 0.65 External dimensions (Unit : mm) 1.25 0.2 2.1 ROHM : UMT3 EIAJ : SC-70 0.1Min. (1) GND (2) IN (3) OUT 0.9 0.7 0.15 Each lead ha same dimensions Abbreviated symbol : F52 2.9 ± 0.2
ROHM
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DTB123Y

transistor MARKING CODE RJ

Abstract: transistor 531 DTB123YK Digital transistor, PNP, with 2 resistors Features available in SMT3 (SMT, SC-59) package package marking: DTB123YK; F52 a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film resistor which is completely , circuits is simple because only ON and OFF conditions have to be set Applications · transistor switch , FVR, h Vqe = - 10 V, 1^ = 50 mA, f = 100 MHz, characteristics of built-in transistor
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transistor MARKING CODE RJ transistor 531

SM5* sharp

Abstract: IR2C19 SHARP ELEK/ MELEC DIV 1SE o| 01307^3 ooanbi 1 J 7-Unit 400mA Darlington Transistor Array IR2C19/IR2C19N IR2C19/IR2C19N ~f-52 - i3~l/5 7-Unit 400mA Darlington Transistor Array â  Description The IR2C19/IR2C19N is a 7-circuit driver. The internal clamping diodes enable the IC to drive the , , TÃJVcc Top View SHARP' 77 SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 1SE D I , Input "Low" voltage V,L 0.4 V 78 SHARP' SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor
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SM550 IR2C19 IR2C19N SM5* sharp SM550 sharp T-52-13-45

marking F52

Abstract: Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 180 8 8 3,000 3,000 Marking F52 F52 , built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co., Ltd
ROHM
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marking F52 DTC123YU DTD123Y R1120A
Abstract: code DTB123YU UMT3 2021 T106 180 8 3,000 F52 DTB123YK SMT3 2928 T146 180 8 3,000 F52 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights , Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM
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k1647

Abstract: TRANSISTOR W 59 D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS · COMPLETE , SINGLE PNP TRANSISTOR CIRCUITS · New Product · · · · R1 R2 VCEO IC Pd hFE/GI @ VO & IO Equivalent SQP Part No Marking K K V mA mW typ V mA Pkg Product £ each PNP Type S1: Transistor & diode UML1N , 100mA transistor DTA113TKA 91 1.0 -50 -100 200 100* -5 -1 SC-59 2SA1037AK 0.08 DTA143TKA 93 4.7 -50 -100 , 100* -5 -1 SC-59 2SA1037AK 0.08 PNP Type S2: Base resistor & 500mA transistor DTB123TK E92 2.2 -40
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k1647 TRANSISTOR W 59 transistor F13 70 DIODE S4 75a S4 75A transistor F13 10 MUN2111 MUN2112 MUN2113 DTA114EKA DTA124EKA DTA144EKA

rkm 33 transistor

Abstract: g1k bc848b method is also used on other packages.) 14 Month of manufacture Digital transistor !SMT3 , DTC123EKA F52 DTB123YK 23 DTC143EKA F62 DTD123YK 24 DTC114EKA F92 DTB123TK , DTD143EL R2A SST3906 F52 DTB123YC R2F SST2907A G1E BC847A R2G SSTA56 G1F
ROHM
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rkm 33 transistor g1k bc848b rkm transistor MMST8598 DTB133HKA DTD133HKA FMW10 FMA10A FMA11A IMB10A IMB11A IMB16
Abstract: code DTB123YU UMT3 2021 T106 180 8 3,000 F52 DTB123YK SMT3 2928 T146 180 8 3,000 F52 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights , built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co ROHM
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rkm 33 transistor

Abstract: bkd transistor transistor ·S M T 3 labels With the SMT3 package as well, the product and Ii f e rank are indicated by 2 or 3 , DTB113EK DTB123EK DTB143EK DTB114EK DTD113EK DTD123EK Package Label F23 F24 F52 F62 F92 F93 F94 G08 , 13 14 15 24 25 96 04 E23 F13 F23 F52 G1E G1F G1G G1J G1K G1L G1L G3E G3F G3K G5B G6B GAB GAC GAD GAH
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bkd transistor BKD C6 Transistor BJD 2SA1885 rkm 20 transistor 2SC1774 UMB10M UMB11N UMD12N UMH10N UMH11N UMH14N

transistor f52 to220

Abstract: t o f th in - (1) G ND (2) IN (3) O U T Addreviated sym bo l: F52 DTB123YC 2.9±0.2 , U T Addreviated sym bo l: F52 DTB123YS â'¢ E q u iv a le n t c irc u it IN O R, W r , * Transition frequency of mounted transistor â'¢ P a c k a g in g s p e c ific a tio n s P ackage SM T3 , world's smallest transistor with a mold size of 1.6 X 0.8 mm. The mounting area is approximately 60% of
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transistor f52 to220 DTB123YK/DTB123YC/DTB123YS SC-43 SC-67 T0-220FP

B 560 PNP TRANSISTOR

Abstract: dtc114ek D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS · COMPLETE , ISOLATED NPN/PNP TRANSISTOR CIRCUITS SC-88, SC-74 DIMENSIONS L P = 4 3 5 2 Z A = = = 6 1 Each lead has the , TRANSISTOR CIRCUITS · COMPLETE SUB­CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY , Type 4 1 +VE R2 IN 2 R1 3 OUT SC-75A, SC-70, SC-59 L P = 1 3 = 2 W1 W H SINGLE PNP TRANSISTOR , typ V mA Pkg Product £ each PNP Type 1: Transistor & diode · UML1N L1 -50 -150 120~560 -6 -1 SC
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B 560 PNP TRANSISTOR dtc114ek Transistor circuits 2SC2412K 2SC2411K 2SA1036K DTC143T DTA143T DTC143TK

m30040

Abstract: GENERAL T RA NS IST O R CORP General Transistor Corporation S4E D 3=120001 OOOQOb? 3 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 (213) 673-8422 · Telex 65-3474 · FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39 a 0.05-5A IC(MAX) VcEO(siiS) = 40-450V NPN Typ«No, comptemtnt 2N3742 VCEO (·Ul) M 300 40 60 200 250 300 350 400 450 60 SO , /25 1 @.01/10 1 @.01/10 1 @.025/10 1 @.025/10 1 @.025/10 1 @.025/10 t.5@ 2/5 f.5@2/5 ICEV @VCE
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m30040 2N0743 2N3867 2N3868 2N4930 2N4931 2N5091

113 marking code transistor ROHM

Abstract: DTDS14GP method is also used on other packages.) 14 Month of manufacture Digital transistor !SMT3 , DTC123EKA F52 DTB123YK 23 DTC143EKA F62 DTD123YK 24 DTC114EKA F92 DTB123TK , DTD143EL R2A SST3906 F52 DTB123YC R2F SST2907A G1E BC847A R2G SSTA56 G1F
ROHM
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113 marking code transistor ROHM DTDS14GP datasheet FMC1A 2SC5274 Rohm IMX1 marking 2SK3065

MWT671HP

Abstract: transistor for the ouput power amplifier. The thirdorder intercept performance of the MwT- 6 is excellent , PLACES A U . BONO W IRES ARE 1 .0 MIL DIAMETER I/» MwT-6.2 7/93 -F52- MwT-6 16 GHz High
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MWT671HP T-671 J135-
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