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transistor f52

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Abstract: FStructure PNP digital transistor (Built-in resistor type) 1/4 LESHAN RADIO COMPANY, LTD , 0V Vo = -5V,Io=-50 mA VCE = -10V,IE = 5m A,f = 100MHZ* DEVICE MARKING LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G F52 10000/Tape&Reel 2/4 LESHAN RADIO COMPANY, LTD. LDTB123YLT1G Electrical Leshan Radio Company
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3000/T 10000/T
Abstract: requirements. LDTB123YLT1G 3 1 2 SOT­23 FEquivalent circuit FStructure PNP digital transistor , ,f = 100MHZ* DEVICE MARKING LDTB123YLT1G = F52 ODRERING INFORMATION Device Marking Shipping LDTB123YLT1G F52 3000/Tape&Reel LDTB123YLT3G F52 10000/Tape&Reel 2/4 Leshan Radio Company
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3000PCS/R 8000PCS/R 30KPCS/I 80KPCS/I 360KPCS/C 960KPCS/C
Abstract: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · · LDTB123YLT1G Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting , RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123YLT1G F52 2.2 10 3000/Tape & Reel LDTB123YLT3G F52 2.2 10 10000/Tape & Reel Electrical characteristics Leshan Radio Company
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Abstract: de vice design easy. ·S tru c tu re PNP digital transistor (Built-in resistor type) DTB123YC 2 .9 ± , have same dimensions (1) GND (2) IN (3) OUT Addreviated symbol : F52 0.95+0.2 0 .4 5 ± 0 .1 , ) IN Addreviated symbol: F52 DTB123YS 4±0 .2 (3) OUT r- i ·E q u iv alen t circuit , * Transition frequency of mounted transistor Transistors ·E le c tric a l characteristic curves -
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DTB123YK SC-59 SC-72 96-302-B123Y DTB123YD
Abstract: symbol : F52 DTB123YK 2.9 Structure PNP epitaxial planar silicon transistor (Resistor , Abbreviated symbol : F52 Part No. Basic ordering unit (pieces) 3000 3000 - DTB123YU - , - - VCE= -10V, IE= 50mA, f= 100MHz Characteristics of built-in transistor Electrical ROHM
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AGi56 T106 T146 SC-70 R0039A
Abstract: conditions need to be set fo r o peration, m aking de vice design easy. ·S tru ctu re PNP digital transistor , v ia te d s y m b o l: F52 (3) OUT DTB123YC 2,9± 0.2 1.9± 0.2 0 .95+ g if n ROHM : SST3 , symbol : F52 DTB123YS 2±0.2 (1) GND (2) IN (3) OUT M ·E q u iva le n t circuit 1 1,0 n .4 AG5 , =5mA, f=100MHz * * Transition frequency of mounted transistor ·P a cka g in g specifications -
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HO-15
Abstract: Abbreviated symbol : F52 Structure PNP digital transistor (Built-in resistor type) 4 ± 0.2 2 ± 0.2 , DTB123YU / DTB123YK / DTB123YS Transistors Digital transistors (built-in resistor) DTB123YU / DTB123YK / DTB123YS 2.0 1.3 (1) 0.3 (3) (2) DTB123YU 0.65 0.65 External dimensions (Unit : mm) 1.25 0.2 2.1 ROHM : UMT3 EIAJ : SC-70 0.1Min. (1) GND (2) IN (3) OUT 0.9 0.7 0.15 Each lead ha same dimensions Abbreviated symbol : F52 2.9 ± 0.2 ROHM
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DTB123Y
Abstract: DTB123YK Digital transistor, PNP, with 2 resistors Features available in SMT3 (SMT, SC-59) package package marking: DTB123YK; F52 a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film resistor which is completely , circuits is simple because only ON and OFF conditions have to be set Applications · transistor switch , FVR, h Vqe = - 10 V, 1^ = 50 mA, f = 100 MHz, characteristics of built-in transistor -
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transistor MARKING CODE RJ transistor 531
Abstract: SHARP ELEK/ MELEC DIV 1SE o| 01307^3 ooanbi 1 J 7-Unit 400mA Darlington Transistor Array IR2C19/IR2C19N IR2C19/IR2C19N ~f-52 - i3~l/5 7-Unit 400mA Darlington Transistor Array â  Description The IR2C19/IR2C19N is a 7-circuit driver. The internal clamping diodes enable the IC to drive the , , TÃJVcc Top View SHARP' 77 SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 1SE D I , Input "Low" voltage V,L 0.4 V 78 SHARP' SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor -
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SM550 IR2C19 IR2C19N SM5* sharp SM550 sharp T-52-13-45
Abstract: Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 180 8 8 3,000 3,000 Marking F52 F52 , built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co., Ltd ROHM
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marking F52 DTC123YU DTD123Y R1120A
Abstract: code DTB123YU UMT3 2021 T106 180 8 3,000 F52 DTB123YK SMT3 2928 T146 180 8 3,000 F52 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights , Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM
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Abstract: D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS · COMPLETE , SINGLE PNP TRANSISTOR CIRCUITS · New Product · · · · R1 R2 VCEO IC Pd hFE/GI @ VO & IO Equivalent SQP Part No Marking K K V mA mW typ V mA Pkg Product £ each PNP Type S1: Transistor & diode UML1N , 100mA transistor DTA113TKA 91 1.0 -50 -100 200 100* -5 -1 SC-59 2SA1037AK 0.08 DTA143TKA 93 4.7 -50 -100 , 100* -5 -1 SC-59 2SA1037AK 0.08 PNP Type S2: Base resistor & 500mA transistor DTB123TK E92 2.2 -40 -
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k1647 TRANSISTOR W 59 transistor F13 70 DIODE S4 75a S4 75A transistor F13 MUN2111 MUN2112 MUN2113 DTA114EKA DTA124EKA DTA144EKA
Abstract: method is also used on other packages.) 14 Month of manufacture Digital transistor !SMT3 , DTC123EKA F52 DTB123YK 23 DTC143EKA F62 DTD123YK 24 DTC114EKA F92 DTB123TK , DTD143EL R2A SST3906 F52 DTB123YC R2F SST2907A G1E BC847A R2G SSTA56 G1F ROHM
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rkm 33 transistor g1k bc848b rkm transistor MMST8598 DTB133HKA TRANSISTOR MARKING CODE R2A FMW10 FMA10A FMA11A IMB10A IMB11A IMB16
Abstract: code DTB123YU UMT3 2021 T106 180 8 3,000 F52 DTB123YK SMT3 2928 T146 180 8 3,000 F52 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights , built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co ROHM
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Abstract: transistor ·S M T 3 labels With the SMT3 package as well, the product and Ii f e rank are indicated by 2 or 3 , DTB113EK DTB123EK DTB143EK DTB114EK DTD113EK DTD123EK Package Label F23 F24 F52 F62 F92 F93 F94 G08 , 13 14 15 24 25 96 04 E23 F13 F23 F52 G1E G1F G1G G1J G1K G1L G1L G3E G3F G3K G5B G6B GAB GAC GAD GAH -
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bkd transistor DTD133HKA BKD C6 Transistor BJD 2SA1885 rkm 20 transistor UMB10M UMB11N UMD12N UMH10N UMH11N UMH14N
Abstract: t o f th in - (1) G ND (2) IN (3) O U T Addreviated sym bo l: F52 DTB123YC 2.9±0.2 , U T Addreviated sym bo l: F52 DTB123YS â'¢ E q u iv a le n t c irc u it IN O R, W r , * Transition frequency of mounted transistor â'¢ P a c k a g in g s p e c ific a tio n s P ackage SM T3 , world's smallest transistor with a mold size of 1.6 X 0.8 mm. The mounting area is approximately 60% of -
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transistor f52 to220 DTB123YK/DTB123YC/DTB123YS SC-43 SC-67 T0-220FP
Abstract: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS · COMPLETE , ISOLATED NPN/PNP TRANSISTOR CIRCUITS SC-88, SC-74 DIMENSIONS L P = 4 3 5 2 Z A = = = 6 1 Each lead has the , TRANSISTOR CIRCUITS · COMPLETE SUB­CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY , Type 4 1 +VE R2 IN 2 R1 3 OUT SC-75A, SC-70, SC-59 L P = 1 3 = 2 W1 W H SINGLE PNP TRANSISTOR , typ V mA Pkg Product £ each PNP Type 1: Transistor & diode · UML1N L1 -50 -150 120~560 -6 -1 SC -
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B 560 PNP TRANSISTOR dtc114ek Transistor circuits 2SC2412K 2SC2411K 2SA1036K DTC143T DTA143T DTC143TK
Abstract: GENERAL T RA NS IST O R CORP General Transistor Corporation S4E D 3=120001 OOOQOb? 3 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 (213) 673-8422 · Telex 65-3474 · FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39 a 0.05-5A IC(MAX) VcEO(siiS) = 40-450V NPN Typ«No, comptemtnt 2N3742 VCEO (·Ul) M 300 40 60 200 250 300 350 400 450 60 SO , /25 1 @.01/10 1 @.01/10 1 @.025/10 1 @.025/10 1 @.025/10 1 @.025/10 t.5@ 2/5 f.5@2/5 ICEV @VCE -
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m30040 2N0743 2N3867 2N3868 2N4930 2N4931 2N5091
Abstract: method is also used on other packages.) 14 Month of manufacture Digital transistor !SMT3 , DTC123EKA F52 DTB123YK 23 DTC143EKA F62 DTD123YK 24 DTC114EKA F92 DTB123TK , DTD143EL R2A SST3906 F52 DTB123YC R2F SST2907A G1E BC847A R2G SSTA56 G1F ROHM
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113 marking code transistor ROHM DTDS14GP 2SC5274 datasheet FMC1A FMC1A MMST5086
Abstract: transistor for the ouput power amplifier. The thirdorder intercept performance of the MwT- 6 is excellent , PLACES A U . BONO W IRES ARE 1 .0 MIL DIAMETER I/» MwT-6.2 7/93 -F52- MwT-6 16 GHz High -
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MWT671HP T-671 J135-
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