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Part Manufacturer Description Datasheet BUY
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor equivalent

Catalog Datasheet MFG & Type PDF Document Tags

transistor equivalent

Abstract: Programmable Unijunction Transistor 'GAO Î M B B 6 9 9 Fig.5 Programmable unijunction transistor equivalent test circuit for characteristics testing. Fig.6 Programmable unijunction transistor equivalent test circuit for gate-anode , VGK Î M BB696 Fig.7 Programmable unijunction transistor equivalent test circuit for , 8 J Fig.11 Silicon controlled switch two transistor equivalent circuit. Fig. 12 PNPN silicon , Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon
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BRY39 transistor equivalent Programmable Unijunction Transistor unijunction transistor BRY39 application data unijunction application note

BRY39

Abstract: Programmable Unijunction Transistor .5 1997 Jul 24 Programmable unijunction transistor equivalent test circuit for characteristics testing. Fig.6 6 Programmable unijunction transistor equivalent test circuit for gate-anode , equivalent test circuit for gate-cathode leakage current. Fig.8 Programmable unijunction transistor , DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BRY39 Programmable unijunction transistor , unijunction transistor/ Silicon controlled switch FEATURES BRY39 PINNING · Silicon controlled
Philips Semiconductors
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k 2134 transistor BRY39 circuit DK 51* transistor transistor b 745 philips bry39 MSB028 MGL168 SCA55

transistor 123 DL

Abstract: equivalent transistor of 2n6027 unijunction transistor is replaced by the PUT plus resistors R1 and R2. Comparing the equivalent circuits of , '"Unijunction transistor Unijunction transistor equivalent circuit (b) ,vEBi RBB-RltR2 R1 r,tr2 Negative resistance , -Programmable unijunction transistor equivalent of unijunction transistor. _a g t$> 92C3-42330 Simplified, typical , Transistor Features: â'¢ Planar Passivated Structure â  Low Leakage Current â  Low Peak Point Current , this diode becomes forward biased in the uni- junction transistor, R, becomes strongly modulated to a
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2N6027 transistor 123 DL equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2N6028 GES6027 GES6028 2CS-4234S IN4I54

ujt trigger circuit

Abstract: ujt 2N6027 ) Programmable unijunction transistor equivalent circuit (b) Simplified, typical circuit, Fig. 1, a utilizing programmable unijunction transistor. (o) Flg. 2-Programmable unijunction transistor equivalent of , '] 3fl7SDfll 0D1Ö01Ö t . 01E 18018 D 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor , (a) shows identically the same circuit except that the unijunction transistor is replaced by the PUT plus resistors R1 and R2. Comparing the equivalent circuits of Figure 1(b) and 2(b), it is seen that
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ujt trigger circuit SCR TRIGGER PULSE equivalent transistor UM 66 transistor 2N6028 ujt unijunction transistor UJT TIMERS AND OSCILLATORS 2CS-42347 13--T 14--H 2N2926

MOTOROLA SCR

Abstract: transistor equivalent TMOS SCR - MCR1000 ANODE TWO TRANSISTOR EQUIVALENT TO TMOS SCR Power FET technology is now extended to include a two-transistor equivalent to latching silicon controlled rectifiers (SCRs). This first-generation TMOS SCR has very fast switching times, high line transient voltage rejection (DV/DT) and asymmetrical blocking. Possible applications are laser drivers, printers, switching power supplies and inverters, and direct-drive-from-logic robotics. For more details, see Motorola Engineering
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MCR1000-4 MCR1000-6 MOTOROLA SCR Gate Turn-Off Thyristors scr 15 amps scr 1000 amps SCR GTO asymmetrical SCR EB103 MGT01000 MGT01200 MGT01400

transistor equivalent

Abstract: NA MARKING SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. ·Thin Fine Pitch Super mini 5 pin Package. KRA560F~KRA564F EPITAXIAL PLANAR PNP TRANSISTOR EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL
KEC
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NA MARKING KRA561F KRA563F

transistor equivalent

Abstract: KSA992 equivalent NPN EPITAXIAL SILICON TRANSISTOR EQUIVALENT INPUT CURRENT NOISE SOURCE EQUIVALENT INPUT CURRENT , KSC1845 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW N O ISE AMPLIFIER · Complement to KSA992 A BSO LU TE MAXIMUM RATINGS ^ - 2 5 * 0 ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Sym bol Vceo Vceo V ebo lc U Pc Tj T sto Rating 120 120 5 50 10 500 150 -55 -
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KSA992 equivalent KSC1845 equivalent

SC-43B

Abstract: PA33 NEC NPN SILICON TRANSISTOR AA1 F4N DESCRIPTION The AA1F4N is designed for use in medium speed switching circuit. FEATURE â'¢ Bias resistors built-in type NPN transistor equivalent circuit. B Rt = 22 ki2 U/w-l R2 O E ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. â'"55 to +150 °C Junction Temperature. 150 °C Maximum Maximum Power Dissipation (Ta = 25 °C) Total Power Dissipation. 300 mW Maximum Voltages and Currents (Ta = 25 °C
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SC-43B PA33 SC43B VOLTAGE-60

transistor KIA-70

Abstract: transistor equivalent NPN SILICON TRANSISTOR BAI L4L DESCRIPTION The BA1L4L is designed for use in medium speed switching circuit. FEATURE â'¢ Bias resistors built-in type NPN transistor equivalent circuit. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. â'"55 to +150 °C Junction Temperature. . 150 °C Maximum Maximum Power Dissipation (Ta = 25 °C) Total Power Dissipation. 250 mW Maximum Voltages and Currents (Ta = 25 °C) VcBO Collector to Base Voltage. 60 V VcEO
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transistor KIA-70 transistor C 547

transistor equivalent

Abstract: "transistor equivalent" Temic S e m i c o n d u c t o r s Transistor Equivalent Circuit T ransistor characteristics can be explained w ith an equiv alent circuit w hose circuit elem ents (in contrast to four-pole coefficients) are considered constant over a wide frequency range. T hese param eters are highly biasand tem perature-dependent. T herefore, the static condi tions m ust be know n completely. The hybrid-n equivalent circuit developed by G iacolleto is a useful representation o f certain transistor types, as its param eters m ay be
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transistor bb
Abstract: ") B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter "Transistor Equivalent Circuit") shows the different capacitances in a transistor , Giacoletto (see section "Transistor Equivalent Circuit'') are used. The y coefficients are valid only for a , , but not the equivalent circuit capacitances. They can be best explained with y coefficients. Ci , frequency of oscillation CL Load capacitance Frequency by which the power gain of a transistor Vishay Intertechnology
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DIAC ecg6407

Abstract: ECG6407 Special Purpose Devices (cont'd) PNP EMITTER PNP COLLECTOR NPN BASE Silicon Controlled Switch (SCS) CATHOOI PNP BASE GATE NPN COLLECTOR 4 NPN EMITTER Transistor Equivalent Circuit 4 anode (Caí
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ECG239 ECG6407 ECG6408 ECG6411 ECG6412 ECG6415 DIAC ecg6407 ECG diac

DIAC ecg6407

Abstract: h06 diode Special Purpose Devices (cont'd) PNP EMITTER ft 4 PNP COLLECTOR NPH BASE Silicon Controlled Switch (SCS) (A) ç4 ANOOe «ä*> CAT HOCH NPN ««E COLLECTOR > NPN EMITTER Transistor Equivalent Circuit ANODE GATE (GC) (Clil CATHODE Thyristor Circuit ECG Type BVCBO Volts bvebo Volts bvcer Volts H FE Min IGT Max mA VGT Max Volts IT Max mA IT Pk Max mA 'TSM Max mA IH Max mA pd Max mW Package/ Outline No. ECG239 PNP -70 -70 -70 0.1 1.0 0.8 50 100 500 1.0 200 TO-72 Fig. S8 NPN 70 5 70 15 1.0 1.2
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ECG6416 ECG6417 ECG6418 ECG6419 h06 diode scs thyristor Bidirectional Diode Thyristors Thyristor TO92 DO-201

equivalent 2SC2655

Abstract: 2SA949 equivalent TOSHIBA {DI SC RE TE /O PT O} - - ^ Sb D eT | TCnTESO 0Q07104 0 / /' 9097250 TOSHIBA ( D I S C R E T E / O P T O ) _ ~ 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Electrical Characteristic (Ta = 25°C) Tj Pc* Ic Pc (V) (A) (W) (W) (°C) -0 .0 5 0.5 0.8 150 Similar Complement Type ary pair T092MOD (TO-92) 2SC2880 2SA949 Type Application VcEO Marking Remarks High voltage 2SA1200 switching, -1
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equivalent 2SC2655 2SA949 equivalent 2SC2873 equivalent 2Sc2229 equivalent toshiba audio power amplifier 2SA1213 equivalent 2SA1201 2SA1202 2SC2882 2SC2881 2SA1213 2SC2873

transistor p13

Abstract: resistance Resistance ratio Characteristics of built-in transistor. Equivalent circuit Max. -0.3 - -300 , inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias , silicon transistor (Resistor built-in type) (3) 0.8 1.6 0.2 0.5 0.5 1.0 EMT3 JEITA No. (SC , transistor. 2 Each terminal mounted on a recommended land. Electrical characteristics (Ta=25C) Parameter
ROHM
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transistor p13 DTB743ZE DTB743ZM SC-75A B743ZM R1120A

transistor MARKING NC KRC

Abstract: TRANSISTOR MARK NB and Manufacturing Process. · High Packing Density. KRC651E~KRC656E EPITAXIAL PLANAR NPN TRANSISTOR EQUIVALENT CIRCUIT OUT IN O VW BIAS RESISTOR VALUES TYPE NO. R l(k ß ) KRC651E 4.7 KRC652E 10 KRC653E , 0.5±0.05 J 0.12±0.05 P 5° COMMON EQUIVALENT CIRCUIT (TOP VIEW TESV U1 U L_l 2 3 MAXIMUM RATING , CHARACTERISTICS (Ta=25"C) Note : * Characteristic of Transistor Only. 2008. 11. 20 Revision No : 2 KEC
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transistor MARKING NC KRC TRANSISTOR MARK NB KRC654E KRC655E KRC651 KRC651E-KRC656E

transistor equivalent

Abstract: UTC btc1510f3l UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for , Packing Tape Reel Tube 1 of 3 QW-R223-002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR EQUIVALENT CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R223-002.a BTC1510F3 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER
Unisonic Technologies
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UTC btc1510f3l BTC1510F3L BTC1510F3G BTC1510F3-TQ2-R BTC1510F3-TQ2-T BTC1510F3L-TQ2-R BTC1510F3G-TQ2-R

free transistor and ic equivalent data

Abstract: "transistor equivalent" -043.a UD2195 Preliminary NPN SILICON TRANSISTOR EQUIVALENT CIRCUIT UTC UD2195 C B 8K 120 E , UNISONIC TECHNOLOGIES CO., LTD UD2195 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION * The UTC UD2195 is designed for use in general purpose amplifier and low speed switching application. * Pb-free package process is adopted. Lead-free: UD2195L , QW-R208-043.a UD2195 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta
Unisonic Technologies
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free transistor and ic equivalent data R208 UD2195G UD2195-AB3-R UD2195L-AB3-R UD2195G-AB3-R

transistor equivalent

Abstract: . KRX205E EPITAXIAL PLANAR NPN/PNP TRANSISTOR EQUIVALENT CIRCUIT Qi OUT q 2 OUT JiU Q i , Qi , S Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTER CHARACTERISTIC , =-5mA R, stg 250 4.7 0.2 V0=-5V, V in=-5V, 2.0 0.3 Note : * Characteristic of Transistor
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transistor KIA-70

Abstract: PA33 NEC PNP SILICON TRANSISTOR ANIA4M DESCRIPTION The AN1A4M is designed for use in medium speed switching circuit. FEATURE â'¢ Bias resistors built-in type PNP transistor equivalent circuit. Rt = 10 kft R2 = 10 ki2 ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. -55 to +150 °C Junction Temperature. 150 °C Maximum Maximum Power Dissipation (Ta - 25 °C) Total Power Dissipation. 300 mW Maximum Voltages and Currents (Ta = 25 °C) VCB0
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