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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor equivalent table

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Abstract: to stand for Halogens-free 2-19 Equivalent Outline Table SURFACE MOUNT DEVICES FOR HYBRID , "GP" after part number to stand for Halogens-free 2-20 Equivalent Outline Table SURFACE , part number to stand for Halogens-free 2-21 Equivalent Outline Table SURFACE MOUNT DEVICES , number to stand for Halogens-free CHIMH11PT CHIMH11PT IHB 2-22 Equivalent Outline Table SURFACE , to stand for Halogens-free 2-23 Equivalent Outline Table SURFACE MOUNT DEVICES FOR HYBRID ... Original
datasheet

12 pages,
201.26 Kb

TRANSISTOR sot 223 dn CHDTA114 CHDTC144T CHUMG8D2PT MARKING DN SOT-563 marking H6 sot 23 NPN transostor prebiased transistor SC-74 SC-74 H2 sot Marking f7 SC-88A npn 2SA20 transistor fg 680 gd BD NPN transistors sc74a NPN PNP sot-563 transistor equivalent table A6 MARKING SC-74 TEXT
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Abstract: necessary to check the Tj (peak) o f each transistor using the DC thermal resistance given in Table 2 and , Rth 3 = Rth 4 = thermal resistance for each transistor from Table 2 is as follows. U . 0 W - 4 2 , radiation equivalent circuit without heat sink Table 3 0i and 0m list for using single units Package , external heat sinks Figure 9 Simple radiation equivalent circuit using external heat sink Table 4 0i , Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting ... OCR Scan
datasheet

11 pages,
345.31 Kb

MP4501 mp4001 tran bipolar transistor NEC transistor equivalent table MP4001 equivalent mp4001 TEXT
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Abstract: time t = 0, the upper transistor turns on and the lower transistor turns off. Also at this time, the voltage across the capacitor is V1. 2. Current flows from the VCCO supply through the upper transistor , transistor turns off and the lower transistor turns on. 4. Current now flows out of the capacitor through the lower transistor into ground, discharging the capacitor to voltage V1 at time t = T, at which , any time, t, the voltage across the upper transistor is given by Equation 2. Equation 2 V DS ( t ... Xilinx
Original
datasheet

17 pages,
988.88 Kb

VIRTEX-5 DDR2 pcb design magic eye ML461 ML561 UG190 UG199 XAPP863 hyperlynx DDR2 sstl_18 class thevenin FF1136 SSTL18I TEXT
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Abstract: 08-17 Transistor Quick Reference Table by Function/Application Small Signal Transistor s Small , -8 SST 2SC2786 2SC2786 2SC2787 2SC2787 2SA1175 2SA1175 CD-ROM X13769XJ2V0CD00 X13769XJ2V0CD00 08-18 Transistor Quick Reference Table , X13769XJ2V0CD00 X13769XJ2V0CD00 08-19 Transistor Quick Reference Table by Function/Application Small Signal Transistor , Reference Table by Function/Application Small Signal Transistor s Small Signal Transistor (4/4) SMALL MINI , -8 SST 2SA1459 2SA1459 CD-ROM X13769XJ2V0CD00 X13769XJ2V0CD00 08-21 Transistor Quick Reference Table by Function ... NEC
Original
datasheet

98 pages,
327.88 Kb

2SA733 transistor equivalent 2SD1694 equivalent MP40 SERIES transistor mp40 2SK3298 equivalent 2SD1297 equivalent 2sC2335 TRANSISTOR equivalent 2SK2057 equivalent 2SA992 equivalent transistor 2sc1941 equivalent BN1L4L 2sd985 equivalent X13769XJ2V0CD00 Equivalent to transistor 2sc945 X13769XJ2V0CD00 2sd882 equivalent X13769XJ2V0CD00 2SK type X13769XJ2V0CD00 2SA1206 TRANSISTOR equivalent X13769XJ2V0CD00 POWER MOS FET 2sj 2sk X13769XJ2V0CD00 2SC1845 equivalent X13769XJ2V0CD00 2SA1444 equivalent X13769XJ2V0CD00 BA1F4M X13769XJ2V0CD00 X13769XJ2V0CD00 X13769XJ2V0CD00 TEXT
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Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 FP103 Q1 PNP transistor Chip transistor MMBT589LT1 MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ... ADTech
Original
datasheet

4 pages,
60.75 Kb

2SB1424 ADT7220 ccd camera module MMBT589LT1 RSX101M-30 SOT-26 301 transistor collector diode protection Device Name 23 330 LDO 3.3V Transistor AND DIODE Equivalent list FP103 sot-26 pwm controller IC FP103 transistor equivalent table TEXT
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Abstract: -25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) .continued Description , LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CW ESD EVM FCH FFT IBW IS-95 IS-95 LDMOS N-CDMA , BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet ... NXP Semiconductors
Original
datasheet

14 pages,
268.68 Kb

BLF6G38S-25 BLF6G38-25 TEXT
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Abstract: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description , BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station ... NXP Semiconductors
Original
datasheet

13 pages,
87.36 Kb

RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD TEXT
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Abstract: BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor Table 10. L1 R1 , Semiconductors BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym , BLF6G38-25 BLF6G38-25; BLF6G38S-25 BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station ... NXP Semiconductors
Original
datasheet

14 pages,
87.12 Kb

J412 - TRANSISTOR SMD BLF6G38S-25 TRANSISTOR j412 BLF6G38-25 TEXT
datasheet frame
Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 FP103 Q1 PNP transistor Chip transistor MMBT589LT1 MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ... ADTech
Original
datasheet

4 pages,
60.91 Kb

2SB1424 Transistor Equivalent list transistor collector diode protection Transistor AND DIODE Equivalent list ADT7221 FP103 RSX101M-30 PWM controller sot-26 MMBT589LT1 SOT-26 301 sot-26 pwm controller transistor equivalent table TEXT
datasheet frame
Abstract: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector ... Siemens
Original
datasheet

4 pages,
31.39 Kb

7 segment led display SIEMENS XR2201 UAA180 equivalent 74248 TTL 7 segment XR-2203 7447 BCD to Seven Segment Decoder 7 SEGMENT DISPLAY basic CIRCUIT 7 segment common anode decoder 7447 7-segment display 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7448 bcd to seven segment decoder 7 segment display lm3915 7 SEGMENT DISPLAY COMMON CATHODE 7 segment with 7447 7448 SDA2014 common anode 7-segment display 7447 BCD to Seven Segment display TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
aircored Table 1. Components List The class A driver transistor, Q listing in Table 1. Split power supply rails (V DD ) are used, giving improved rejection of power circuit, C 4 , R 8 , R 9 also allows the driver transistor, Q 4 , to operate at near allows symmetry to be maintained under overload conditions. Transistor Q 3 and resistors R transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET Power MOSFETs, Q
/datasheets/files/international-rectifier/docs/wcd0000c/wcd00c22.htm
International Rectifier 06/10/1998 17.99 Kb HTM wcd00c22.htm
Ther following table shows the main features of the DMOS transistor. Figure 27: Power stage circuit. shows the current across the switching transistor. The current shape is trapezoidal and the operation is component, D V C , and a resistive component, D V ESR , due to the ESR equivalent series resis - tance of D + P L + P q + p sw (12) DC LOSSES P sat :saturation losses of the power transistor Q. These o V i and V sat is the power transistor saturation at current Io. P D : losses due to the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v1.htm
STMicroelectronics 02/04/1999 77.25 Kb HTM 1711-v1.htm
across the switching transistor. The current shape is trapezoidal and the operation is in continuous component, D V ESR , due to the ESR equivalent series resis - tance of the capacitor. Fig. 4g shows the D + P L + P q + p sw (12) DC LOSSES P sat :saturation losses of the power transistor Q. V i (13) where T ON T = V o V i and V sat is the power transistor saturation at SWITCHING LOSSES P sw :switching losses of the power transistor : P sw = V i I o t r + t f 2T
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v3.htm
STMicroelectronics 25/05/2000 79.09 Kb HTM 1711-v3.htm
Ther following table shows the main features of the DMOS transistor. Figure 27: Power stage circuit. shows the current across the switching transistor. The current shape is trapezoidal and the operation is component, D V C , and a resistive component, D V ESR , due to the ESR equivalent series resis - tance of D + P L + P q + p sw (12) DC LOSSES P sat :saturation losses of the power transistor Q. These o V i and V sat is the power transistor saturation at current Io. P D : losses due to the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1711-v2.htm
STMicroelectronics 14/06/1999 77.21 Kb HTM 1711-v2.htm
MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued)     Page 7 of 10 device Table 3: Estimated improvement in circuit speed by parameters on current generation circuit speed improvements is shown in Table 3. We call it best case, since the transistor off-state leakage. Studies done at Intel indicate that NMOS SOI devices require a
/datasheets/files/intel/techno~1/itj/q31998/articles/art_3g-v1.htm
Intel 02/02/1999 10.45 Kb HTM art_3g-v1.htm
gate bipolar transistor (IGBT) technology offers a combination of these attributes. MOSFETs are : Cross-Section and Equivalent Schematic of an IGBT Cell Click on figure to enlarge it - Use Browser's BACK button to return to reduced size Figure 2: Cross-Section and Equivalent Schematic of a is reduced. Now the P+ substrate, n-epi layer and P+ "emitter" form a BJT transistor and the return to Table of Contents
/datasheets/files/motorola/design-n/ppd/html/psvol2-1/art01.htm
Motorola 25/11/1996 8.18 Kb HTM art01.htm
MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued)     Page 7 of 10 device Table 3: Estimated improvement in circuit speed by parameters on current generation circuit speed improvements is shown in Table 3. We call it best case, since the transistor off-state leakage. Studies done at Intel indicate that NMOS SOI devices require a
/datasheets/files/intel/techno~1/itj/q31998/articles/art_3g.htm
Intel 31/10/1998 10.45 Kb HTM art_3g.htm
transistors, and the necessity for magnetic and capacitive energy storage. Table 1 shows the seven most common regulator topologies beginning with the simplest (top of table) (which are to more specialized types (bottom). The table also lists the pros and cons of each topology, allowing you to scroll through and find the topology that meets your needs. Table 1. The table omits complex topologies such as resonant-mode regulators, because their control
/datasheets/files/maxim/0008/view_018.htm
Maxim 04/04/2001 24.69 Kb HTM view_018.htm
applications. The IC integrates two linear controllers and a low-current pass transistor, as well as the slots through an external pass transistor, as instructed by the status of the 3.3V DUAL enable pin. An additional pass transistor is used to switch in the ATX 3.3V output for PCI operation during S0 and S1 power through an external pass transistor in active states. During S3 state, an integrated pass transistor supplies the 2.5V/3.3V sleep-state power. A third controller powers up a 5V DUAL plane by
/datasheets/files/intersil/device_pages/device_hip6501a.html
Intersil 07/09/2006 27.01 Kb HTML device_hip6501a.html