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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
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transistor equivalent table

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: to stand for Halogens-free 2-19 Equivalent Outline Table SURFACE MOUNT DEVICES FOR HYBRID , "GP" after part number to stand for Halogens-free 2-20 Equivalent Outline Table SURFACE , part number to stand for Halogens-free 2-21 Equivalent Outline Table SURFACE MOUNT DEVICES , number to stand for Halogens-free CHIMH11PT IHB 2-22 Equivalent Outline Table SURFACE , to stand for Halogens-free 2-23 Equivalent Outline Table SURFACE MOUNT DEVICES FOR HYBRID -
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CHDTC144T A6 MARKING SC-74 NPN PNP sot-563 sc74a BD NPN transistors transistor fg 680 gd 2SA20 CHEMG11PT CHDTC124E CHDTC144E CHDTC114Y CHDTC143Z CHDTC114E
Abstract: necessary to check the Tj (peak) o f each transistor using the DC thermal resistance given in Table 2 and , Rth 3 = Rth 4 = thermal resistance for each transistor from Table 2 is as follows. U . 0 W - 4 2 , radiation equivalent circuit without heat sink Table 3 0i and 0m list for using single units Package , external heat sinks Figure 9 Simple radiation equivalent circuit using external heat sink Table 4 0i , Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting -
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mp4001 MP4001 equivalent bipolar transistor NEC mp4001 tran MP4501
Abstract: time t = 0, the upper transistor turns on and the lower transistor turns off. Also at this time, the voltage across the capacitor is V1. 2. Current flows from the VCCO supply through the upper transistor , transistor turns off and the lower transistor turns on. 4. Current now flows out of the capacitor through the lower transistor into ground, discharging the capacitor to voltage V1 at time t = T, at which , any time, t, the voltage across the upper transistor is given by Equation 2. Equation 2 V DS ( t Xilinx
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XAPP863 UG190 ML461 UG199 ML561 SSTL18I FF1136 thevenin DDR2 sstl_18 class VIRTEX-5 DDR2 pcb design hyperlynx SSTL18 JESD8-15A UG079
Abstract: 08-17 Transistor Quick Reference Table by Function/Application Small Signal Transistor s Small , -8 SST 2SC2786 2SC2787 2SA1175 CD-ROM X13769XJ2V0CD00 08-18 Transistor Quick Reference Table , X13769XJ2V0CD00 08-19 Transistor Quick Reference Table by Function/Application Small Signal Transistor , Reference Table by Function/Application Small Signal Transistor s Small Signal Transistor (4/4) SMALL MINI , -8 SST 2SA1459 CD-ROM X13769XJ2V0CD00 08-21 Transistor Quick Reference Table by Function NEC
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2SA1444 equivalent BA1F4M POWER MOS FET 2sj 2sk 2sd882 equivalent 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845
Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ADTech
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ADT7220 IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list Device Name 23 330 LDO 3.3V transistor collector diode protection ta701 H/590 F/10V F/25V
Abstract: -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) .continued Description , LDMOS transistor 10. Abbreviations Table 11. Acronym CCDF CW ESD EVM FCH FFT IBW IS-95 LDMOS N-CDMA , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet NXP Semiconductors
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ACPR885 ACPR1980 2002/95/EC
Abstract: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station NXP Semiconductors
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smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M
Abstract: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Table 10. L1 R1 , Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station NXP Semiconductors
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TRANSISTOR j412
Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ADTech
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ADT7221 SOT-26 301 PWM controller sot-26 RSX101M-30 Transistor Equivalent list 2SB1424
Abstract: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector Siemens
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XR-2203 7447 BCD to Seven Segment display common anode 7-segment display SDA2014 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 ICM7218B ICM7218C ICM7218D ICM7218E TSC700A TSC7212A
Abstract: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 NXP Semiconductors
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30RF35 VJ1206Y104KXB
Abstract: 26 April 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER , , germanium, high-frequency, low-power transistor. 1. 2 Physical dimensions. See figure 1 (TO-33). 1. 3 , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , corners of tab. FIGURE 1. Physical dimensions of transistor types 2N1224 and 2N1225 (TO-33). 3 MIL-S , angle. FIGURE 2. Gage for lead and tab location for transistor types 2N1224 and 2N1225. 4 aoecixiea -
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MDB Resistor IRC MMC carbon marking "3AA" 410B MIL-S-19500/189B MIL-S-19500
Abstract: transistor or MMIC can suffer permanent electrical damage if any of its breakdown voltages are exceeded , and reliability. Transistor Chip Use This is an abstract from Application Note AN-A005: Transistor Chip Use. Packaging, Shipment, and Storage Hewlett-Packard chips are supplied in two inch , COMMON Figure 1. MSA Equivalent Circuit Schematic. 10-8 pad on the device to a circuit trace , using a resistively-biased PNP transistor as a current source is shown in Figure 3. In this circuit Hewlett-Packard
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laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice ATF13136 MSA-09 INA-12 INA-12063 INA12 04E-16 43E-12 74E-12
Abstract: TYPE NUMBER microwave transistor TR DIMENSIONS 1/4 MC3403 or equivalent note 1 2N2219 , power MOS transistors are marked with a code that indicates their gate-source voltage range (see Table , trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking codes may be used for identification (see Table 9). Table 8 Marking codes for RF power transistors CODE VGS CODE VGS 0 1.00 Philips Semiconductors
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Y parameters of transistors 1721E50R transistor 2N2219 data sheet similar 2N2219 transistor IC 1032 EQUIVALENT MARKING 41B 1N4148 MBC775
Abstract: Breakdown - V(BR)CES - 650 V S ta te -o f-A rt Bipolar Power Transistor Design Fast Inductive Switching , are given to facilitate "worst case" design. REV 1 3-696 Motorola Bipolar Power Transistor , OFF CHARACTERISTICS (1) Colledor-Emitter Sustaining Voltage (Table 1) (Iq » 20 mAdc, lg - 0 , Inductive Load (Table 1) Storage Crossover Fall Time Storage Crossover Fall Time iC - 5.0 A, Iß! - 0.5 A , 2000 150 75 2600 200 125 ns Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time -
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K 3699 transistor D 400 F 6 F BIPOLAR TRANSISTOR two transistor flyback bipolar transistor td tr ts tf k 2445 transistor Tektronix AM503 MJE16106 AN952 AN951 AN875 MUR105 MUR170
Abstract: radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 , Semiconductors LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 , BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance , radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description , BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 - 19 February 2009 Product data NXP Semiconductors
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smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 TAJD106K035R sot975c
Abstract: desired VgEfoff) at Point A. 3-156 Motorola Bipolar Power Transistor Device Data 2N6836 Table 2 , Saturation Voltages Leakage Currents 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS 175 WATTS o- · , Rejc Tl °c/w °c Motorola Bipolar Power Transistor Device Data 3-151 2N6836 ELECTRICAL , (1) Collector-Emitter Sustaining Voltage (Table 2) (lc = 100 mA, lB - 0 ) Collector Cutoff Current , . ftest - 1-0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time -
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3155 power transistor P6042 transistor crossover 100-C P-6042
Abstract: , 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance , Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal , Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics , ) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet , · · Modifications: Table 2 "Discrete pinning": amended Figure 10 "Equivalent on-resistance NXP Semiconductors
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PBSS9110Y SC-88
Abstract: Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , , 1 A PNP low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history , PBSS9110S 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 - 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT54 (SC-43/TO , . relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference NXP Semiconductors
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S9110S s9110 SC-43A SC-43/TO-92
Abstract: the bottom contact. Also shown are the equivalent circuit elements created by the semiconductor , stopper diffusion. Transistor TR1 Although the is formed by the double sided glass n+pn- layers. Similarly, mesa gives the transistor TR2 is formed by smallest chip size, the pn-p layers. Avalanche , resistor R1, Figure 4. wafer size that can be processed shunt the base-emitter junction of transistor , give a higher breakdown voltage than required, and diffuse Transistor Junctions, 1000 hours, 720 V at Bourns
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GR-1089-CORE SCR TRANSISTOR 6NTP2A high power Triode for induction heating SCR gate Control IC asymmetrical SCR ericsson telecom catalog 3700F3 4360H3BJ 219H3BJ 61089B 8200M 8201M
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