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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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transistor equivalent table

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Abstract: Halogens-free 2-7 Equivalent Outline Table SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC , number to stand for Halogens-free 2-8 Equivalent Outline Table , 100~300 1/10 0.3 50/5 300 20/10 SC-88 SC-88 V / mA DUAL NPN SILICON TRANSISTOR , SILICON TRANSISTOR CH3904SPT CH3904SPT NN 40 DUAL NPN SILICON TRANSISTOR CHEMX1PT X1 50 150 , 0.4 50/5 180 12/2 SOT-563 DUAL NPN SILICON TRANSISTOR CHIMX1PT IX1 50 DUAL ... Original
datasheet

2 pages,
42.64 Kb

04 transistor cs_ sc-88 free pdf transistor bs 200 SOT563 transistor transistor 50 MHz Transistor marking 0.5 SC-88 SOT-563 Silicon Transistor transistor marking CS x1 transistor transistor equivalent table CH3904VPT CHT2222VPT CH3904VPT abstract
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Abstract: more details.) Suggested Transistor Part Numbers Table 1 lists suggested part numbers for the transistors in Figure 1. Table 1. Suggested Transistor Part Numbers Designator Description Suggested Part Numbers Q2/Q3/Q5/Q6 NPN general-purpose transistor MMBT3904 MMBT3904 or equivalent Q1/Q4 NPN medium-power transistor FMMT493 FMMT493, ZXTN2038F ZXTN2038F, or equivalent Q7/Q8 PNP medium-power transistor FMMT593 FMMT593, ZXTP2039F ZXTP2039F, or equivalent Application Note 4190: www.maxim-ic.com/an4190 More Information For technical ... Original
datasheet

4 pages,
55.09 Kb

ZXTP2039F 4190 AN4190 ccfl driver DS3984 DS3988 DS3991 DS3992 DS3994 FMMT493 FMMT593 ZXTN2038F "CCFL Controller" power mosfets APP4190 DS3994 abstract
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Abstract: -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , Therefore a darlington versus a single output transistor will have different current limiting resistor , Equivalent A B RS C RS D RS E RS F RS RS B A G RS RS RS C RS 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector ... Original
datasheet

4 pages,
31.39 Kb

7 Segment common cathode common cathode 7-segment display driver 7447 BCD to Seven Segment Decoder XR2201 74248 TTL 7 segment XR-2203 7 segment common anode decoder 7 SEGMENT DISPLAY basic CIRCUIT 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7448 bcd to seven segment decoder 7447 7-segment display datasheet abstract
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Abstract: cell, built with 1.2 micron rules is shown in Figure 1, with cell cross-section and equivalent circuit , cross-section. TUNNELNG -T~~ CARM3T0RS _w-L- BTT LINE SELECT TRANSISTOR FLOATING GATE TRANSISTOR ARRAY GND ISOLATION Figure 3: Cell equivalent circuit. © 1986 IEEE. Reprinted, with permission, from INTERNATIONAL , transistor cell. This cell is made possible through the dual functions incorporated within various key components; specifically, (1) the poly 3 element, which functions as both word line select transistor and ... OCR Scan
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2 pages,
324.96 Kb

SD2300 transistor equivalent table datasheet abstract
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Abstract: apply to Sanken Hybrid Series Voltage Regulator for line-operated TV incorporating output transistor and error detection circuit. 2. Features: a. Triple diffused darlington transistor chips are incorporated. , : standard output voltage is set as 110V, 115V, 123V, 130V. 3. Equivalent Circuit: 1 o if o o 2 1 I , Tstg °C -40-125 Power Transistor Junction Temperature T. 3 °C 150 max. * Recommended operating , 25°C) a Description Symbol Unit Rating Conditions Output Voltage Vo V 110±1~130±1 See Table 1 Line ... OCR Scan
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4 pages,
120.94 Kb

sanken DARLINGTON POWER MODULE transistor 110v Television sanken Sanken Electric TRANSISTOR Sanken marking sanken ic regulator Sanken Hybrid Voltage Regulator Transistor marking SAK sanken transistor c series transistor equivalent table STR370 sanken power transistor datasheet abstract
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Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 FP103 Q1 PNP transistor Chip transistor MMBT589LT1 MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ... Original
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4 pages,
60.75 Kb

2SB1424 ADT7220 ccd camera module MMBT589LT1 RSX101M-30 SOT-26 301 transistor collector diode protection Device Name 23 330 LDO 3.3V Transistor AND DIODE Equivalent list FP103 sot-26 pwm controller IC FP103 transistor equivalent table ADT7220 abstract
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Abstract: schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 FP103 Q1 PNP transistor Chip transistor MMBT589LT1 MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper ... Original
datasheet

4 pages,
60.91 Kb

2SB1424 ADT7221 FP103 MMBT589LT1 PWM controller sot-26 RSX101M-30 SOT-26 301 transistor collector diode protection Transistor Equivalent list transistor equivalent table sot-26 pwm controller ADT7221 abstract
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Abstract: (diode) storage tim e turn-on tim e turn-off tim e tstg ton toff Table 2 Transistor Symbol , , common em itter Table 3 Unijunction transistor Symbol Ib lB2(Mod) IE IEB20 IEB20 I em Ip Iv VB2B1 V bieo , Letter Symbol and Graphical Symbol 8.1 Letter symbol Table 1 General Symbol NF P Rth Rth j-c , voltage base 1-base 2 resistance, with em itter open instrinsic standoff ratio 115 Table 4 Field Effect Transistor (FET) Symbol SOA C g id CG2D Cis Cos Crs Ciss Coss Crss fopr Gps Description safe ... OCR Scan
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7 pages,
222.18 Kb

transistor equivalent table datasheet abstract
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Abstract: desired VgEfoff) at Point A. 3-156 Motorola Bipolar Power Transistor Device Data 2N6836 2N6836 Table , Saturation Voltages Leakage Currents 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS 175 WATTS o- · , Rejc Tl °c/w °c Motorola Bipolar Power Transistor Device Data 3-151 2N6836 2N6836 ELECTRICAL , (1) Collector-Emitter Sustaining Voltage (Table 2) (lc = 100 mA, lB - 0 ) Collector Cutoff Current , ftest - 1-0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time ... OCR Scan
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7 pages,
241.17 Kb

P6042 transistor equivalent table 3155 power transistor 2N6836 2N6836 abstract
datasheet frame
Abstract: SILICON TRANSISTOR CH3906VPT CH3906VPT CHT857BVPT CHT857BVPT CHT2907VPT CHT2907VPT CHT4126SPT CHT4126SPT CHT4403SPT CHT4403SPT CH857SPT CH857SPT CHT2907SPT CHT2907SPT , TRANSISTOR CH3906SPT CH3906SPT PP -40 DUAL PNP SILICON TRANSISTOR CHEMT1PT T1 -50 -150 120~560 , -200/-10 DUAL PNP SILICON TRANSISTOR CHEMT2PT T2 -50 DUAL PNP SILICON TRANSISTOR CHEMT3PT T3 -50 Add the "GP" after part number to stand for Halogens-free 2-9 Equivalent Outline Table ... Original
datasheet

1 pages,
35.33 Kb

transistor marking T2 SC-88 Dual PNP Transistor TRANSISTOR sot-563 SOT-563 PNP Silicon Transistor transistor equivalent table CH3906VPT CHT857BVPT CHT2907VPT CHT4126SPT CHT4403SPT CH857SPT CH3906VPT abstract
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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
mH aircored Table 1. Components List The class A driver transistor, Q 4 The amplifier circuit diagram is shown in Figure 1, and the components listing in Table 1. Split transistor, Q 4 , to operate at near constant current which improves the linearity of the driver stage. The Transistor Q 3 and resistors R 11 , R 12 , R 13 provide gate-source offset voltage for the output the bipolar transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET
www.datasheetarchive.com/files/international-rectifier/docs/wcd00011/wcd011a6.htm
International Rectifier 20/08/1999 17.96 Kb HTM wcd011a6.htm
mH aircored Table 1. Components List The class A driver transistor, Q 4 The amplifier circuit diagram is shown in Figure 1, and the components listing in Table 1. Split transistor, Q 4 , to operate at near constant current which improves the linearity of the driver stage. The Transistor Q 3 and resistors R 11 , R 12 , R 13 provide gate-source offset voltage for the output the bipolar transistor, Q 3 , emitter base voltage and the combined threshold voltages of the HEXFET
www.datasheetarchive.com/files/international-rectifier/docs/wcd0000c/wcd00c22.htm
International Rectifier 06/10/1998 17.99 Kb HTM wcd00c22.htm
MOS Scaling: Transistor Challenges for the 21st Century (continued an SOI device Table 3: Estimated improvement in circuit speed these parameters on current generation circuit speed improvements is shown in Table 3. We call it best increasing the transistor off-state leakage. Studies done at Intel indicate that NMOS SOI devices require a somewhat higher threshold voltage than bulk devices to maintain an equivalent off-state leakage due to the
www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_3g-v1.htm
MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v2.htm
Intel 02/02/1999 10.45 Kb HTM art_3g-v2.htm
MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v2-vx2.htm
Intel 04/05/1999 10.45 Kb HTM art_3g-v2-vx2.htm
MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v1.htm
Intel 02/02/1999 10.45 Kb HTM art_3g-v1.htm
MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g.htm
Intel 31/10/1998 10.45 Kb HTM art_3g.htm
No abstract text available
www.datasheetarchive.com/download/35785455-597102ZC/clf1g0035-50_ads_model.zip (AN_NXPCLF1G0035_50_GAnHFET_Transistor_Model.pdf)
NXP 22/10/2012 222.99 Kb ZIP clf1g0035-50_ads_model.zip
No abstract text available
www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (AN_NXPCLF1G0035_100_GAnHFET_Transistor_Model.pdf)
NXP 23/10/2012 57734.64 Kb ZIP 71691.zip
No abstract text available
www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (AN_NXPCLF1G0035_50_GAnHFET_Transistor_Model.pdf)
NXP 23/10/2012 57734.64 Kb ZIP 71691.zip