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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor equivalent irf510

Catalog Datasheet MFG & Type PDF Document Tags

Cross Reference power MOSFET

Abstract: irf 3502 mosfet -453 IRF510-513, IRF610-613, IRF710-713, IRF820-823, MTP2N45, MTP2N50 IRF830-833, MTM4N45, MTM4N50, MTP4N50 , IRF441 IRF442 IRF443 IRF450 IRF451 IRF452 IRF453 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IFR522 IRF523 , IRF530 IRF532 IRF520 MTP10N10 IRF522 IRF510 IRF512 MTP4N10 MTP20N08 MTP10N08 MTP4N08 (RF541 IRF543 IRF531 , IRF530 IRF532 IRF632 IRF820 IRF822 IRF720 IRF722 IRF511 IRF510 IRF611 IRF711 IRF710 IRF521 IRF521 IRF520 , SD1021KD Fairchild Part No. IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612
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Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram TQ-220AC T0-204AA T0-204AE T0-220AB T0-220AC

IRF5905

Abstract: MOSFET IRF 9732 equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , equipment contains one HEXFET transistor 2-4 operating at a temperature of 100°C. The designer , IRF4905 IRF4905S IRF510 IRF510S IRF520 IRF520N IRF520NS IRF520S IRF5210 IRF5210S IRF530 IRF5305 IRF5305S , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg
International Rectifier
Original
IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732

irf740 switching 3 phase motor driver

Abstract: IRF510 SEC mosfet operation lends itself to straightforward electrical equivalent circuits. The device is composed of alternating sections of 'p' and `n' materials: precisely the composition of a bipolar (npn) transistor. The overlay in Figure 2a identifies the lumped equivalent circuit components. Figure 2b shows the lumped circuit in detail. What we have is an identifiable parasitic bipolar junction transistor (PBJT) intrinsic to the MOSFET cell structure. If this cellular transistor is turned on in any of the hundreds of
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irf740 switching 3 phase motor driver IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 snubber circuit for mosfet push pull IRF540 complementary SEL84-005

transistor equivalent irf510

Abstract: 966a likely that all HEXFET HI devices will easily achieve the Es/b rating of bipolar transistor of equivalent , di/dt A/ps 'SD A TJ °C IRF510 IRF710 IRF520 IRF720 IRF820 IRF530 IRF730 IRF83Q IRF540 IRF740 , transistor in a power MOSFET to conduct, resulting in cur rent crowding and breakdown of the device. This , parasitic bipolar transistor (see Feature 2) should never conduct or even approach the conducting state. To , effective way of eliminating devices in which the parasitic bipolar transistor is prone to activation
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966a irf460a HEXFET III - A new Generation of Power MOSFETs transistor equivalent irf740 transistor equivalent irf710 AN-966A

IRFIBC44LC

Abstract: MOSFET IRF 3710 individual test data by part type. HTRB A total of 16,158 devices have accumulated the equivalent of 4.47 , devices on long term gate stress have accumulated the equivalent of over 40 billion device-hours at a , is identifying all of the critical transistor attributes. Once the critical attributes have been , Equivalent lots Qty Device Hours Tj = 90°C; Vg = 12V/6V 9 1072 0 1.35E+10 FITs @ 90°C & 60% UCL , Modes Equivalent Failures Device Hours Tj = 90°C; Vg = 12V/6V 8 C,V,L 2.25E+10 FITs @ 90°C &
International Rectifier
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IRFIBC44LC MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615

IRF540 n-channel MOSFET

Abstract: GES 9515 transistors available from International Rectifier in die form. These power MOS field effect transistor dice , limitations when electrically probing in wafer form, some of the generic specifications of the equivalent , design to meet the specifications of the equivalent part: gfs, CjSS, C0ss> crss> and Tj(max) for HEXFET , grade electronic coating such as Dow Corning RTV3140 or equivalent may be applied. If the package is , irf510 pd-9.325 1 IRFC210R 200 1.500 4 0.005/0.127 0.005/0.127 irf610 pd-9.326 irfc214r 250 2.000 4
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IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent IRF540 p-channel MOSFET IRF540 mosfet with maximum VDS 30 V QD102 55M52

1RFZ40

Abstract: 1RF150 MTP6N10 6 3-636 2 IRF512 3.5 20 3-115 0.6 IRF510 4 3-115 0.5 4 MTP8N10 8 75 3-656 MTP8N10E , Indicata« new product. Noto: All ol these devices can bo purchased with JTX or JTXV equivalent processing , MOSFET with the low Internal on-resistance of a bipolar transistor to provide more efficient performance
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1RFZ40 1RF150 MTP25N10E MTP35N06E mth7n50 Transistor BUZ80a equivalent DK101/D MTP2P50 MTP2P45 MTP3P25 MTP5P25 MTP8P25

IRFZ44G

Abstract: IRF840G Fit Rate / Equivalent Device Hours Traditionally, reliability results have been presented in terms , . The values reported in this report are at a 60% upper confidence limit and the equivalent device hours , source terminal. Transistor action occurs by penetration of an electric field into the channel area which , TEST TIME (hours) 2008 2080 2008 2080 FAILURES # 0 0 0 0 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60 , 2008 2008 2008 2008 2008 2008 2008 2011 FAILURES # 0 0 0 0 0 0 0 0 0 0 0 0 0 0 EQUIVALENT FAILURE RATE
International Rectifier
Original
IRFZ44G IRF840G IRFZ34G IRFBC30G IRF640G IRF9540G IRFI740GLC IRFI840GLC IRFIBC40GLC IRLIZ14G IRLIZ24G IRLIZ34G

k 3561 MOSFET

Abstract: BUZ80a equivalent N 1 2 M TP 6N 10 IRF512 IRF510 4 M TP 8N 10 M TP 8 N 1 0É 0.4 0.33 0.3 0 .2 5 5 4 5 8 0.18 6 0.15 10 , product. Note All of these devices can be purchased with JTX or JTXV equivalent processine] by aoamg HX , combines the high input resistance of a MOSFET with the low internal onresistance of a bipolar transistor
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k 3561 MOSFET TP5N05 p20n50 P12N08 Z84B nx 9120 DK101 VITP5P25 F9640 F9630 MTP2QP06

webcam circuit diagram

Abstract: 47803 NXP Relay Low-power digital outputs lack the necessary 2. Size the interface transistor to accommodate , when the transistor gap using a relatively low-power magnetic coil to control a switch designed to , toolbar signifying that the VI is in run mode, â'¢ Correct transistor orientation â'" the transistor has , transistor showing how the project compiles and deploys from large back-emf voltage when the transistor , automatically. circuit design principles including: sizing the transistor for relay coil current, importance
National Instruments
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webcam circuit diagram 47803 NXP 125 kHz RFID tag EM4001 finder delay relay webcam Schematic Diagram schematic satellite finder

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide possible to find the standard equivalent or a suitable replacement by using one of the semiconductor , power-handling capacity. Transistors Some important parameters for transistor selection are voltage and , distributors. Motorola Small-Signal Transistor Data Motorola RF Device Data Motorola Linear and Interface , transistors Cathodes and transistor emitters Control grids, diode plates, and base 1 of transistors Plates and transistor collectors Power supply, minus leads Ac power line leads Bias supply, B or C minus
Toshiba
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ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE UG-59A UG-1214 UG-60A UG-1215 UG-560 UG-496

design smps 500 watt TL494

Abstract: 600 watt uc3844 smps schematic Transistor FALL TIME CLEARING RECTIFIERS IPEAK PINCHING OFF INDUCTIVE CHARACTERISTICS OF THE , are the saturation voltage of a bipolar power transistor, the "on" loss of a power MOSFET shown in , , excessive switching losses can also provide a lethal stress to the transistor in the form of second breakdown and current crowding failures. Care should be taken in the careful analysis of each transistor , collector-to-emitter voltage as possible when the transistor is "on". To do this the designer strives to have the
Motorola
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design smps 500 watt TL494 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e

35n05

Abstract: mje12007 turns ratio w ill have to be adjusted slightly to compensate for IR drops, diode drops, and transistor , . Ideally, the transistor would like just enough forward drive (current) to stay in or near saturation and , similar to a bipolar transistor. Today's 400 V FETs com­ pete with bipolar transistors in many switching , drive the power switching transistor. Some ICs provide only a single output while others provide a , jctA78s40 and the MC34063. These chips feature an on­ board 40 V, 2 A switching transistor and operate by
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35n05 mje12007 Motorola Switchmode 1 special 2N6823 20N15 AN803 motorola

equivalent data book of 10N60 mosfet

Abstract: MC14016CP BUZ351 BUZ41A BUZ42 BUZ60 BUZ60B BUZ71 BUZ71A BUZ72A BUZ73A BUZ76 BUZ76A IRF510 IRF511
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equivalent data book of 10N60 mosfet MC14016CP GD4511 CX 2859 SMD an-6466 74AC14 spice 1-800-4HARRIS FAX24-H 1-800-4-HARRIS

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets range is out­ standing. The net result is a radically advanced power transistor of univer­ sal , on-resist­ ance and the high-voltage character­ istics of a true power transistor could not be , '" f GATE 6 6 EMITTER SOURCE (a) NPN BIPOLAR TRANSISTOR (a) BIPOLAR TRANSISTOR , is to be taken of the MOSFEiTsâ'™ special perform­ ance features. Figure 3. Bipolar Transistor , collector, base and emitter ter­ minology for the terminals of a bipolar transistor are replaced by drain
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IRF 544 N MOSFET Spice 2 computer models for hexfets 4af2NPP IR transistor D586 jrc 2115 equivalent gi 9424 diode

power MOSFET IRF740 driver circuit

Abstract: h-bridge power MOSFET IRF740 ns o f 'p' and 'n' m aterials: precisely the c o m p o s itio n o f a bipo lar (n pn) transistor. The , tm m » M LLU , tzzzt DRAIN (A) Figure 2. Lumped Equivalent Circuit Components M , . C V/ns N» IRF510 IRF710 IRF520 IRF720 IRF820 IRF530 IRF730 IRF830 IRF540 IRF740 IRF840 IRF450 , transistor. This MOSFET (with body diode conducting) w ill not suffer from diode recov ery dv/dt since the , ta ry transistor. T h is is n o t easily calcula ted and th u s requires c irc u it m easurem ent and
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power MOSFET IRF740 driver circuit FET IRF730 transistor IRF520

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide equivalent or a suitable replacement by using one of the semiconductor cross-reference directories available , important parameters for transistor selection are voltage and current limits, power-handling capability , , off ground Power Supply B plus Screen grids and base 2 of transistors Cathodes and transistor emitters Control grids, diode plates, and base 1 of transistors Plates and transistor collectors Power , diameter is equivalent to the older FT-243 (32 pF) holder. 7.10 Chap 7.pmd Chapter 7 10 7
Motorola
Original
one chip tv ic 8873 cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide equivalent or a suitable replacement by using one of the semiconductor cross-reference directories available , important parameters for transistor selection are voltage and current limits, power-handling capability , , off ground Power Supply B plus Screen grids and base 2 of transistors Cathodes and transistor emitters Control grids, diode plates, and base 1 of transistors Plates and transistor collectors Power , diameter is equivalent to the older FT-243 (32 pF) holder. 7.10 Chap 7.pmd Chapter 7 10 8/3
Motorola
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oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes russian transistor cross-reference yd 7377 philips ecg replacement guide

UC3842 smps design with TL431

Abstract: atx power supply UC3842 diagram . Examples of conduction losses are the saturation voltage of a bipolar power transistor, the "on" loss of , TURN-OFF LOSS SWITCHING LOSS Figure 17. Stresses and Losses within a Bipolar Power Transistor IPEAK , switching losses can also provide a lethal stress to the transistor in the form of second breakdown and current crowding failures. Care should be taken in the careful analysis of each transistor's FBSOA and , as small a collector-to-emitter voltage as possible when the transistor is "on". To do this the
ON Semiconductor
Original
atx power supply UC3842 diagram controller for PWM fan tl494 differences uc3842a uc3842b TL494 AC-DC 150W application P6N60 sg3526 inverter schematic circuit diagram

8N60 equivalent

Abstract: IRFD1Z3 equivalent POWER MOSFET DATA MOTOROLA POWER MOSFET TRANSISTOR DATA Prepared by Technical Information Center , 3.5 IRF510 4 M TP8N10 8 75 150 0.18 120 100 0.6 4 0.5 p ^ e 3 , purchased with JTX or JTXV equivalent processing by adding HX or HXV suffix to device type. MOTOROLA TMOS , internal onresistance of a bipolar transistor to provide more efficient performance than either a MOSFET or , field-effect transistor when the gate terminal is reverse bi­ ased with respect to the source terminal and
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8N60 equivalent IRFD1Z3 equivalent TP8N20 siemens semiconductor manual MTM5N90 designers datasheet irf8408 4000D 4001D L001A 4501D 4502D P002A
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