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transistor equivalent book

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Abstract: +5V low drop power supply (external PNP power transistor) · Built-in reset circuit (reset voltage , mV 5V Regulator External Transistor Base Current Limit Value I3LIM 16 mA Thermal , Voltage (VCC/12V VCC/12V) Equivalent Circuit Description 1 1 PVCC I 12V 2 VCC I 12V 3 TB O Power VCC pin. Supplies a current flowing to the output power transistor. 11.3V 33 VCC pin. Not connected to the power VCC pin. 2 3 External PNP transistor base ... Panasonic
Original
datasheet

5 pages,
179.73 Kb

dc 12v motor driver ic A1547 an8377n 20KW motor motor dc 10kW 20KW DC motor 10kw MN6622 MN6625 AN8377N TEXT
datasheet frame
Abstract: power supply (external PNP power transistor) · Built-in reset circuit (reset voltage : 4.82V) · Built-in , at Reset 5V Regulator External Transistor Base Current Limit Value Thermal Protective Circuit , Voltage (VCC/12V VCC/12V) Equivalent Circuit 1 PVCC I 12V 2 VCC I 12V 3 TB O , current flowing to the output power transistor. 2 VCC pin. Not connected to the power VCC pin. 3 External PNP transistor base connection pin 4 10kW 10kW External PNP transistor collector ... Panasonic
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datasheet

5 pages,
178.6 Kb

transistor ic equivalent book MN6622 AN8377N TEXT
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Abstract: example 1, the standby current can be held to 0. In this circuit, a transistor essentially equivalent to , , low power, and a built-in overcurrent protection circuit to protect the switching transistor from , Equivalent Circuits Pin No. Pin I/O Function 1 CLM I Detects the overcurrent state in switching transistor. Insert a resistor with a low resistance between this pin and VCC to detect , . Internal equivalent circuit 1 VCC 0.1 V CLM comp. 50 uA VREF 2 3 4 CT O ... Panasonic
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datasheet

16 pages,
400.14 Kb

AN8013SH AN8013 TEXT
datasheet frame
Abstract: -HOV or OV to +5V inputs into 4mA to 20mA, or 5mA to 25mA outputs. The required external MOS transistor , MANUFACTURING • POWER PLANT/ENERGY SYSTEM MONITORING An external transistor can be added for more current , . 1602} 746 1111 Tw»: 910-9521 111 ■ Cable: BBRCORP ■ Tele»: 66-6491 Burr-Brown IC Data Book PDS , . .40mA Burr-Brown 1C Data Book 3-140 This Material Copyrighted By Its Respective Manufacturer Vol. 33 , equivalent combination of time and temperature). Plastic "-BI" models: +85° C Ceramic "-BI" models: +125°C ... OCR Scan
datasheet

11 pages,
419.91 Kb

PDS-555 transistor 2246 with circuit diagram TRANSISTOR BI 237 transistors tn2905 XTR110AG XTR110BG VP060 XTR110 mosfet equivalent book ZVP1304A st 555C VP1306N3 lm324 4mA to 20mA transmitter VP0300M equivalent IRF9513 equivalent VP0300B equivalent 80 amp 30v npn darlington BC pnp 200mA RELE 12V 5 pines TEXT
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Abstract: . 7 Technical Explanations 7.1 Basic Transistor Configurations Figure 2 Data Book , . Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power , semiconductor component Control or switching device: low power (e.g. thyristor) Transistor: low power ... Infineon Technologies
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datasheet

24 pages,
375.56 Kb

ujt transistor transistor SMD b22 germanium varactor diode optocoupler H11B transistor SMD Z2 Y11 smd code transistor ic equivalent book SMD Transistor g22 smd code book transistors applications of ujt smd code book z1 SMD H21 "tunnel diode" oscillator SMD Transistor Y22 smd transistors code book Y22 transistor smd SMD transistor y11 g21 SMD Transistor transistor Common Base configuration SMD Transistor Y12 TEXT
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Abstract: : signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier ... OCR Scan
datasheet

24 pages,
594.34 Kb

transistor book smd diode code 1B2 smd transistor A11b TEXT
datasheet frame
Abstract: : variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier ... Infineon Technologies
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datasheet

24 pages,
215.35 Kb

applications of ujt Common collector configuration basic EHA07107 GaAs tunnel diode optocoupler H11B smd y12 SMD transistor BC RN SMD Transistor Y12 g21 SMD Transistor SMD transistor y11 transistor smd bc rn TEXT
datasheet frame
Abstract: Data Book 2-205 Vol. 33 OPERATIONAL AMPLIFIERS OPA2541 OPA2541 BURR-BROW N® OPA2541 OPA2541 , °C increase in temperature. (2) Assum es equal dissipation in both amplifiers. Burr-Brown IC Data Book , . Model OPA2541AM-BI OPA2541AM-BI OPA2541BM-BI OPA2541BM-BI O PA2541SM PA2541SM -BI Pftefccge TO-3 TO-3 TO-3 NOTE: (1) Or equivalent , Data Book 2-207 Vol. 33 COMMON-MODE REJECTION V S FREQUENCY OUTPUT CURRENT V S T E M PE R A T U R E Burr-Brown IC Data Book Output Current (A) C M R R (dB) 2-208 ... OCR Scan
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9 pages,
563.85 Kb

pcfc internal circuit OPA2541SM 1A SYNCHRO, SERVO DRIVER Burr-Brown Application Note AN-83 similar ic book TEXT
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Abstract: 100 mA 1.2 V Output leak current 1 IOLe1 VCC = 34 V, when output transistor is , IC design and are not guaranteed. 4 SDH00002BEB SDH00002BEB AN8011S AN8011S I Terminal Equivalent Circuits Pin No. Equivalent circuit Description VREF 16 To PWM input IO CT 1 OSC comp , 16 0.75 V 4 IN-2 SDH00002BEB SDH00002BEB 5 AN8011S AN8011S I Terminal Equivalent Circuits (continued) Pin No. 5 Equivalent circuit Description 8 mA typ. O DTC2: 1) Terminal for ... Panasonic
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datasheet

17 pages,
375.78 Kb

AN8011S TEXT
datasheet frame
Abstract: . Figure 5b shows an amplifier connection of the OTA, the equivalent of a common-emitter transistor , transistor.” Like a transistor, it has three terminals—a high-impedance input (base), a lowimpedance input , ±3 ±20 ±5.5 ±26 1C Data Book Supplement, Vol. 33c E P Package— 8-Pin Plastic CHP T , -8 Surface-Mount -25°C to +85°C -25°C to +85°C B U R g-B gO M fflj» 1 ^ 3 W l ¡C Data Book , Book Supplement, Vol. 33c 1 B B » OTA Transconductance (mA/V) Offset Voltage (mV) Buffer ... OCR Scan
datasheet

16 pages,
469.51 Kb

EL Ei 33c transformer 1-80B-548-6132 OPA66O TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
eliminates transistor storage time as a speed limiting characteristic, permitting very high speed operation. functions include both 10E (10H Equivalent) and full voltage and temperature compensated 100E (100H Equivalent) versions. In addition to the 28-lead PLCC ECLinPS family, an 8-lead SOIC ECLinPS Lite family is Master Selection Guide Price Book Data Library Literature Order Form Mfax
/datasheets/files/motorola/design-n/logic/mecl_ove.htm
Motorola 25/11/1996 3.34 Kb HTM mecl_ove.htm
photo BJT has its own temperature corrections, which must be kept * as the transistor is electrically .SUBCKT A4N32 A4N32 A K C B E PARAMS: REL_CTR=1 * 4N32 from Motorola Optoelectronics data book Q3/93 Q3/93 - RPerez .SUBCKT A4N33 A4N33 A K C B E PARAMS: REL_CTR=1 * 4N33 from Motorola Optoelectronics data book Q3/93 Q3/93 - RPerez .SUBCKT CNY17-1 CNY17-1 A K C B E PARAMS: REL_CTR=1 * CNY17-1 CNY17-1 from Motorola Optoelectronics data book Q3/93 Q3/93 - .SUBCKT CNY17-2 CNY17-2 A K C B E PARAMS: REL_CTR=1 * CNY17-2 CNY17-2 from Motorola Optoelectronics data book Q3/93 Q3/93 -
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/opto.lib
Spice Models 29/07/2012 30.09 Kb LIB opto.lib
bipolar (a transistor) noted for its speed. It contains an emitter, collector, and base and that of CMOS devices (low power consumption) are fabricated on a single chip. Bipolar 1. A type of transistor transistor noted for its speed that contains an emitter, collector and base. BIT A binary digit, such as '1' or '0'; or a single data value with two states (ON/OFF, TRUE/FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked during the month to orders delivered
/datasheets/files/stmicroelectronics/stonline/press/news/glossary-v2.htm
STMicroelectronics 14/06/1999 34.27 Kb HTM glossary-v2.htm
equivalent function, are also necessities of a high speed family. The following summary will outline the book as well as appropriate family data books and other literature for descriptive information on the spaced J'bend leads. More detailed measurements can be found in the package section of this data book more details on thermal issues of the ECLinPS family refer to the thermal section of this data book. Abbreviation Definitions The following is a list of abbreviations found in this data book and a brief
/datasheets/files/motorola/design-n/logic/dl140_ov.htm
Motorola 25/11/1996 19.64 Kb HTM dl140_ov.htm
/FALSE). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked technology using the advantage of bipolar (a transistor) noted for its speed. It contains an emitter Bipolar 1. A type of transistor where a flow of both conduction electrons and holes determines the device characteristics. 2. A transistor noted for its speed that contains an emitter, collector and base. process used to design and fabricate both NMOS (a MOS transistor that has negative electron flow) and PMOS
/datasheets/files/stmicroelectronics/stonline/press/news/glossary-v1.htm
STMicroelectronics 20/10/2000 36.25 Kb HTM glossary-v1.htm
). BO/BI Book to Bill A trend indicator equivalent to the ratio between orders booked during technology using the advantage of bipolar (a transistor) noted for its speed. It contains an emitter Bipolar 1. A type of transistor where a flow of both conduction electrons and holes determines the device characteristics. 2. A transistor noted for its speed that contains an emitter, collector and base. Oxide Semiconductor) A process used to design and fabricate both NMOS (a MOS transistor that has
/datasheets/files/stmicroelectronics/stonline/press/news/glossary.htm
STMicroelectronics 20/12/2000 36.69 Kb HTM glossary.htm
optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = million equivalent usable gates. The array operates over a Vdd voltage range of 2.7 to 3.6 volts. The I/O pairs of transistor have common polysilicon gates, while the outer two pairs have separate gates for the stacked via1, via2 with or without silicon contacts. The transistor width utilized by the DOUBLE BUFF- ER resistance in pre- vious technologies. This very low resistance is one reason that very low transistor widths
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2626.htm
STMicroelectronics 20/10/2000 34.19 Kb HTM 2626.htm
, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates vertically arranged. The centre two pairs of transistor have common polysilicon gates, while the outer two transistor width utilized by the DOUBLE BUFF- ER cell is very small as compared to previous technologies. very low resistance is one reason that very low transistor widths could be utilized in the cell design
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2626-v1.htm
STMicroelectronics 02/04/1999 31.36 Kb HTM 2626-v1.htm
resistance salicided active areas, polysi- licide gates and thin metal oxide. n 3.3 V optimized transistor potential available gate count ranges above 1.5 Million equivalent gates. Devices can operate over a Vdd This very low resistance is one reason that very low transistor widths could be utilized in the cell /O output transistor section does not have a fixed width. Previous technologies utilized a design have identical twenty five micron wide output transistor slices stepped around the die. Each slice
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2633-v2.htm
STMicroelectronics 14/06/1999 28.83 Kb HTM 2633-v2.htm
, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates vertically arranged. The centre two pairs of transistor have common polysilicon gates, while the outer two transistor width utilized by the DOUBLE BUFF- ER cell is very small as compared to previous technologies. very low resistance is one reason that very low transistor widths could be utilized in the cell design
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2626-v2.htm
STMicroelectronics 14/06/1999 31.32 Kb HTM 2626-v2.htm