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TTL-LOGIC-DATABOOK Texas Instruments TTL-LOGIC-DATABOOK visit Texas Instruments
EKB-UCOS3-BOOK Texas Instruments Micrium?s ?C/OS-III: The Real-Time Kernel visit Texas Instruments
PLL_BOOK Texas Instruments PLL Performance Simulation and Design Handbook - 4th Edition visit Texas Instruments

transistor equivalent book

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Abstract: +5V low drop power supply (external PNP power transistor) · Built-in reset circuit (reset voltage , mV 5V Regulator External Transistor Base Current Limit Value I3LIM 16 mA Thermal , Voltage (VCC/12V) Equivalent Circuit Description 1 1 PVCC I 12V 2 VCC I 12V 3 TB O Power VCC pin. Supplies a current flowing to the output power transistor. 11.3V 33 VCC pin. Not connected to the power VCC pin. 2 3 External PNP transistor base Panasonic
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MN6625 MN6622 10kw 20KW DC motor motor dc 10kW dc 12v motor driver ic AN8377N HDIP016-P-0300
Abstract: power supply (external PNP power transistor) · Built-in reset circuit (reset voltage : 4.82V) · Built-in , at Reset 5V Regulator External Transistor Base Current Limit Value Thermal Protective Circuit , Voltage (VCC/12V) Equivalent Circuit 1 PVCC I 12V 2 VCC I 12V 3 TB O , current flowing to the output power transistor. 2 VCC pin. Not connected to the power VCC pin. 3 External PNP transistor base connection pin 4 10kW 10kW External PNP transistor collector Panasonic
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transistor ic equivalent book
Abstract: example 1, the standby current can be held to 0. In this circuit, a transistor essentially equivalent to , , low power, and a built-in overcurrent protection circuit to protect the switching transistor from , Equivalent Circuits Pin No. Pin I/O Function 1 CLM I Detects the overcurrent state in switching transistor. Insert a resistor with a low resistance between this pin and VCC to detect , . Internal equivalent circuit 1 VCC 0.1 V CLM comp. 50 uA VREF 2 3 4 CT O Panasonic
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AN8013SH AN8013 SSOP010-P-0225 SSOP010-P-0225A
Abstract: -HOV or OV to +5V inputs into 4mA to 20mA, or 5mA to 25mA outputs. The required external MOS transistor , MANUFACTURING â'¢ POWER PLANT/ENERGY SYSTEM MONITORING An external transistor can be added for more current , . 1602} 746 1111 Tw»: 910-9521 111 â  Cable: BBRCORP â  Tele»: 66-6491 Burr-Brown IC Data Book PDS , . .40mA Burr-Brown 1C Data Book 3-140 This Material Copyrighted By Its Respective Manufacturer Vol. 33 , equivalent combination of time and temperature). Plastic "-BI" models: +85° C Ceramic "-BI" models: +125°C -
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RELE 12V 5 pines BC pnp 200mA TRANSISTOR BI 237 VP0300B equivalent 80 amp 30v npn darlington IRF9513 equivalent XTR110 XTRI10 LM324 IRFF9113
Abstract: . 7 Technical Explanations 7.1 Basic Transistor Configurations Figure 2 Data Book , . Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power , semiconductor component Control or switching device: low power (e.g. thyristor) Transistor: low power Infineon Technologies
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SMD Transistor Y12 transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book
Abstract: : signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier -
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smd transistor A11b smd diode code 1B2 transistor book EHA07W1
Abstract: : variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier Infineon Technologies
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transistor smd bc rn SMD transistor BC RN smd y12 optocoupler H11B GaAs tunnel diode EHA07107 EHA07040 EHA07041
Abstract: Data Book 2-205 Vol. 33 OPERATIONAL AMPLIFIERS OPA2541 BURR-BROW N® OPA2541 , °C increase in temperature. (2) Assum es equal dissipation in both amplifiers. Burr-Brown IC Data Book , . Model OPA2541AM-BI OPA2541BM-BI O PA2541SM -BI Pftefccge TO-3 TO-3 TO-3 NOTE: (1) Or equivalent , Data Book 2-207 Vol. 33 COMMON-MODE REJECTION V S FREQUENCY OUTPUT CURRENT V S T E M PE R A T U R E Burr-Brown IC Data Book Output Current (A) C M R R (dB) 2-208 -
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similar ic book Burr-Brown Application Note AN-83 1A SYNCHRO, SERVO DRIVER OPA2541SM pcfc internal circuit PDS-768A AN-123 17313L
Abstract: 100 mA 1.2 V Output leak current 1 IOLe1 VCC = 34 V, when output transistor is , IC design and are not guaranteed. 4 SDH00002BEB AN8011S I Terminal Equivalent Circuits Pin No. Equivalent circuit Description VREF 16 To PWM input IO CT 1 OSC comp , 16 0.75 V 4 IN-2 SDH00002BEB 5 AN8011S I Terminal Equivalent Circuits (continued) Pin No. 5 Equivalent circuit Description 8 mA typ. O DTC2: 1) Terminal for Panasonic
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fb1120
Abstract: . Figure 5b shows an amplifier connection of the OTA, the equivalent of a common-emitter transistor , transistor.â' Like a transistor, it has three terminalsâ'"a high-impedance input (base), a lowimpedance input , ±3 ±20 ±5.5 ±26 1C Data Book Supplement, Vol. 33c E P Packageâ'" 8-Pin Plastic CHP T , -8 Surface-Mount -25°C to +85°C -25°C to +85°C B U R g-B gO M fflj» 1 ^ 3 W l ¡C Data Book , Book Supplement, Vol. 33c 1 B B » OTA Transconductance (mA/V) Offset Voltage (mV) Buffer -
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EI - 33c TRANSFORMER EI 33c TRANSFORMER EL Ei 33c transformer 1-80B-548-6132 OPA66O 700MH OPA66O-IGC OPA66Q-2GC OPA660-3GC
Abstract: magnetosound using 3-phase full-wave overlap drive. Built-in power transistor. · Standby mode for minimizing , s Pin Descriptions Pin No. Pin name Standard waveform Description CS Equivalent circuit VB 1 , Descriptions (cont.) Pin No. Pin name Standard waveform Description VCC 2I Equivalent circuit I 9 , Description Equivalent circuit 17 VCC : Power supply Terminal inputting the V CC power supply VB , . Pin name Standard waveform Description VB Equivalent circuit 25 PCI : Current feedback Panasonic
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AN3861SA
Abstract: . 36 Rev D, July 2000 1 The Bipolar Power Transistor (BPT), as a switching device for power , Semiconductor Field Effect Transistor). The power MOSFET is used in many applications such as SMPS (Switched , improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction Transistor , from FSC's data book specifications. 1. History of Power MOSFETs The theory behind Field Effect Transistor has been known since 1920~1930, which is 20 years before the Bipolar Junction Transistor was Fairchild Semiconductor
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AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages vmosfet
Abstract: 0.65±0.1 0.65 (0.625) 1.5±0.2 1 drive. Built-in power transistor. · Standby mode for , Unit °C s Pin Descriptions Pin No. Pin name Standard waveform Equivalent circuit , waveform Equivalent circuit Description VCC 2I 9 SL3 : Slope waveform generation (3) I , waveform Equivalent circuit Description Terminal inputting the V CC power supply VCC : Power , Standard waveform Equivalent circuit Description VB 25 PCI : Current feedback system phase Panasonic
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560PF PANASONIC AN38 SSOP032-P-0300
Abstract: resistors (see the equivalent c ir cuit). 2) The bias resistors consist of thinfilm resistors with complete , 2 ± 0.2 m Ì ·S tru ctu re NPN digital transistor (Built-in resistor type) Ü É 0.5 fl^ 1 , -55-150 300 S Unit V V mA mW °C "C · Equivalent circuit Ic Pd Tj Tstg (96-354-D 114E) 438 , * Transition frequency ot mounted transistor ·P acka ging specifications Package Package style Type Code , correct as of March 1997. No unauthorized transmission or reproduction of this book, either in whole or in -
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DTD114ED DTD114EK DTD114ES SC-59 SC-72 DTD114EK/DTD114ES
Abstract: ) ·S tru ctu re PNP digital transistor (Built-in resistor type) Equivalent circuit IN O VvV , circuit without connecting external input resistors (see the equivalent cir cuit). 2) The bias resistors , - kO MHz 1 250 fr * Transition frequency ol mounted transistor ·P a cka g in g , transmission or reproduction of this book, either in whole or in part, is permitted. The contents of this book , diagrams and circuit constants contained in this data book are shown as examples of standard use and -
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DTA124 catalogue de transistor 124ESA rohm dtA124 DTA124EE/DTA124EUA/DTA124E KA/DTA124ECA/DTA124ESA 124ED
Abstract: resistors (se e th e equivalent cir cuit). 2) The bias resistors consist of thinfilm resistors with complete , aking de vice design easy. S tructure PNP digital transistor (Built-in resistor type) 0 .5. II,0-45 , mW S V Unit ^Equivalent circuit Ri IN O V *r- OOUT -OG ND (+) G N D (+ ) °C °c , = -50mA - - Vce= -10V, lE=5mA,f=100MHz * Transition frequency of mounted transistor , reproduction of this book, either in whole or in part, is permitted. The contents of this book are subject to -
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DTB113ZK/DTB113ZS 0-45--O TB113ZS DTB113ZD 96-2B8-B113Z DTB113ZK/DTB
Abstract: resistors (see the equivalent c ir cuit) . 2) The bias resistors consist of thinfilm resistors with complete , aking de vice design easy. ·S tru ctu re PNP digital transistor (Built-in resistor type) ·E xte rn a l , Equivalent circuit ROHM : SPT EIAJ : SC-72 Q 'sJll0 r-^3_n (1) (2) 0 ) I ,.+ 0 .1 5 (1) GND (2 , = 100MHz * Transition frequency of mounted transistor ·P a cka g in g specifications Package Package , transmission or reproduction of this book, either in whole or in part, is permitted. The contents of this book -
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transistor r3n DTB143EK/DTB143EC/DTB143ES TB143E DTB143EC DTB143ES 96-304-B143E DTB143ED
Abstract: . 38 Rev C, November 1999 1 The Bipolar Power Transistor as a switching device for a power , Semiconductor Field Effect Transistor ). Power MOSFET is being used in many applications such as SMPS, computer , presentation of items of FSC's data book specification. 1. History of Power MOSFETs The theory of Field Effect Transistor had been advent around 1920~1930 which is 20 years before the Bipolar Junction Transistor has been invented, which is from 1940's and through early 1950s. At that time J.E. Lilienfeld of -
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P-Channel Depletion Mosfets n mosfet depletion 600V MOSFET 800V 10A fairchild power bjt datasheet n Power mosfet depletion MOSFET N-CH 200V
Abstract: chopper techniques on chip. Data Book 80 2003-05 TLE4906H Pin Configuration (top view , . 1 2 3 Symbol Function Supply voltage Output Ground VS Q GND Data Book 81 0.8 ±0.15 , transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation , Data Book 82 2003-05 TLE4906H Absolute Maximum Ratings Tj = ­ 40 °C to +150 °C Parameter , . Data Book 83 2003-05 TLE4906H ESD Protection Human Body Model (HBM) tests according to Infineon Technologies
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all transistor book P-SC59-3-2 Q62705-K695 AEP03242 AEB03241 AED03243 P-SC59-3-1
Abstract: circuits and chopper techniques on chip. Data Book 99 2003-05 TLE4946H Pin Configuration , Functions Pad No. 1 2 3 Symbol Function Supply voltage Output Ground VS Q GND Data Book 100 0.8 , circuits, oscillator, and output transistor. The bias generator provides currents for the Hall probe and , accurate magnetic switching points. . Data Book 101 2003-05 TLE4946H Absolute Maximum , extended periods may affect device reliability. Data Book 102 2003-05 TLE4946H ESD Infineon Technologies
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smd code book transistor AEA03244 GPS09473
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