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transistor d 1991 ar

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transistor d 1991 ar

Abstract: bbS3T31 QD3T73S flfl3 « A P X Product specincation VHF power transistor September 1991 m , VHF power transistor BLY91C/01 N AUER PHILIPS/DISCRETE b'iE D APPLICATION INFORMATION RF , b'lE D N AUER P H ILIP S /D IS C R E TE â  b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile
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transistor d 1991 ar T122F1

Philips 4312 020

Abstract: ferroxcube wideband hf choke load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-iead SOT122 D , INTERNATIONAL bSE D UHF power transistor BLT53 'T (GHz) y , PHILIPS INTERNATIONAL UHF power transistor 7110fl2b 00b2b4S 757 bSE D IPHIN Product specification , Philips Semiconductors 711002b PHILIPS INTERNATIONAL UHF power transistor â¡â¡bEbm bSE , domestic waste. PIN CONFIGURATION F.ÃEB012 e Fig.1 Simplified outline and symbol. May 1991 89 This
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Philips 4312 020 ferroxcube wideband hf choke transistor 4312 UHF POWER philips transistor philips capacitor 470 MCD200 MCD20

BSP220

Abstract: UCB737 specification - N AMER PHILIPS/DISCRETE b?E D- P-channel enhancement mode BSP220 vertical D-MOS transistor , mode vertical D-MOS transistor FEATURES â'¢ Low R0S( , transistor in a PIN CONFIGURATION miniature SOT223 envelope and intended for use in relay, high-speed and , Philips Semiconductors Data sheet status Product specification date of issue April 1991 QUICK , Semiconductors_(sj AnER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES
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UCB737 C-MOS transistor p-channel BL SOT223 S3T31 00E3A73 MBB115 MSB002 MC3144
Abstract: values. Fig 11 Definition of transistor impedanoe. September 1991 *7 003Slbfi TIE Philips , Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES â'¢ SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 â'C in a , temperature profile â'¢ Gold metallization ensures excellent reliability. M O D E OF OPERATION f , temperature at soldering point of collector tab. NPN silicon planar epitaxial transistor encapsulated in a -
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003S1LE
Abstract: mounting base. December 1991 419 N AflER P H IL IP S /D IS C R E T E bTE T> m b b S 3 , are selected in accordance with the Icon ar|d ' b requirements. Fig. 2 Test circuit resistive , N AMER PHILIPS/DISCRETE b^E D â  bbS3T31 DDEaS^b 3 lâ'¢4 f APX BUX99 SILICON TRIPLE DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn power transistor in a , hFE min. min. typ. max. 10 ic lc = 50 mA; V c e 420 =5V A December 1991 -
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capacitor 104 PF disc

Abstract: transistor T43 Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE UHF power transistor blE D â , Manufacturer N AMER PHILIPS/DISCRETE UHF power transistor LIE D â  bbS3*i31 0020038 4S5 MAPX BLU30/28 ri , TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the , toxic. The device is entirely safe provided that the internal BeO disc is not damaged. January 1991 , D bb53T31 00HÛÛ33 T43 â  APX A RATINGS Limiting values in accordance with the Absolute
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capacitor 104 PF disc transistor T43 B52 transistor D 1991 AR apx 188 Transistor 5331 53T31

transistor d 1991 ar

Abstract: D 1991 AR 0 ta d( t; .5 P 7U ar rr ai et 77 It 9t March 1991 494 , Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK439-60A PowerMOS transistor T- 39-/5 PHILIPS INTERNATIONAL SbE D ?llGfl2b QDM4SS4 flb? «PHIN GENERAL DESCRIPTION , '"39â'"15 Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D BUK439-60A 711002b 004455b b3T â , March 1991 492 Philips Components Tâ'"39â'"15 Preliminary specification PowerMOS transistor PHILIPS
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9T TRANSISTOR BUK439 CMS transistor 004455S T-39-15 Q044SS

transistor d 1991 ar

Abstract: BLY87 N AMER PHILIPS/DISCRETE LTE D bbsa^i GüSTb?4 STI «APX BLY87C/01 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V, The transistor is resistance stabilized and is guaranteed to , . power transistor bTE D â  bbSBTBl 00ETb7b 3bM HIAPX BLY87C/01 CHARACTERISTICS Tj = 25°C unless , . power transistor LIE D m bb53'ì31 DOE^bfiO 0=13 HIAPX BLY87Ã/01 X OPERATING NOTE Below 70 MHz a
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BLY87C 8-32UNC

BUK474

Abstract: 3909 applications. PINNING-SOT186A BUK474-800A/B PowerMOS transistor SbE D m 711002b GDMMbÃ'^ 5T2 HIPHIN QUICK , Philips Components Data sheet status Preliminary specification date of issue March 1991 , power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power , Manufacturer Philips Components T-39-09 Preliminary specincauuri Power M OS transistor BUK474-800A/B , = 0 V; Vqs = 25 V; f = 1 MHz - 450 42 15 750 70 30 PF PF PF 'don »r tdolt ti Turn-on delay time
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BUK474 3909 BUK474-800A BUK474-800B BUK444-800A/B

D 1991 AR

Abstract: BD852 ar|d Ppeak max l'nes (2) Second-breakdown limits. "V August 1991 235 BD644; 646; 648 , max ar|d Ppeak max *'nes (2) Second-breakdown limits. 236 August 1991 T-33-31 Silicon , temperature of the output transistor is taken into account. 232 Augiist 1991 Silicon Darlington , . August 1991 237 BD644; 646; 648 BD650; 652 )^ SbE D 711065b 0045^51 TT7 H P H I N T , BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D
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BD852 TRansistor 648 651 diode DIODE 646 on BD643 BD645 BD647 BD651 MSA060-1 T--33--31

Transistor 2TY

Abstract: QUA L IT Y T E C H N O L O G I E S CORP April 1991 Package Outlines S7E D 453 â , TECHNOLOGIES CORP S7E D mu , H11B255 D U A L IT Y T E C H N O L O G I E S CORP S7E ] > 74t.bflSl O O D M bM l 3T3 , photoDarlington transistor. Features â'¢ High maximum output voltage â'¢ Very high output/input DC current , ): AC 250 V / DC 300 V â'" isolation group C QUICK REFERENCE D A TA Diode Vr max. max. 60 mA
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Transistor 2TY 77Q4J3RA 7Z94796A SA048-2

fqmb

Abstract: philips ah 686 . Zn, mb = f(t); parameter D = tJT March 1991 685 This Material Copyrighted By Its Respective , specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D SUB THRESHOLD CONDUCTION , Philips Components T-39-11 Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D , Philips Components Data sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK793-60A fqmb philips ah 686 LD 25 V 00MM747 BUK793-S0A

BU826

Abstract: junction temperature o f the ou tput transistor part is taken into account. 128 December 1991 I , this region is permissible, provided V g g < 0 and tp < 2 ms. ^ to t max ar|d Ppeak max l ' nes(2 , N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application. QUICK REFERENCE D ATA
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53R31 7Z88075

BU508A

Abstract: BU508D N AMER PHILIPS/DISCRETE blE D â  D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection , half-sinewave voltage (curve tracer). 74 December 1991 Ar This Material Copyrighted By Its Respective Manufacturer N AUER PHILIPS/DISCRETE Silicon diffused power transistor LIE D â  ^53^31 DDEÃEbb ITH BU508A , December 1991 73 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE
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philips bu508a T1185 transistor Bu508A D02A2 7Z243S4 7Z2436S

TL-250

Abstract: tl250 Philips Components Data sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL BUK993-60A PowerMOS transistor Logic Level Sensorf ET 5bE D m TllOflPb 004475"} 100 «PHIN GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a 5 pin plastic envelope , transistor BUK993-60A PHILIPS INTERNATIONAL 5fc>E D â  711DfiEb 00M47bl fib1? HPHIN REVERSE DIODE LIMITING , Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D 300 200 VMK/mV BUK993-60A 77 â
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TL-250 tl250 transistor tic 698 vmk 5 pin BUK9y3-60A 0G447

BUK795-60A

Abstract: March 1991 5hE D â  711GÃ5b 00144753 7T2 «PHIN BUK795-60A 7-39-90 PowerMOS transistor SensorFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope , - pF March 1991 690 Philips Components t-39- 9o Preliminary specification PowerMOS transistor BUK795 , Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D SUB THRESHOLD CONDUCTION , Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D BUK795-60A 711062h 0G4H75fi 274
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0G4H75 TJ-25C

k575

Abstract: 05 k575 -r-'Sf-O? Philips Components BU K575-60A/B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL SbE D â  7110flSb D044724 HI «PHIN GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode , specification date of issue March 1991 Replaces BUK545-50A/B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX , 3 d LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134
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BUK575 k575 05 k575 600 V logic level fet MC 140 transistor rm3 transistor BUK575-60A/B DD4472

TDA8380

Abstract: tda8380 power supply connected to pin 12 (R 12) ar|d is defined by the ratio R g /R l2 - The minimum supply voltage (pin 5) set , transistor d V /d t is internally limited to reduce interference. Care should be taken w ith the external , 1.4 > 6/6 28.5 100 I6/6.3 100 30 - V V mA kHz kHz 10` 6 /K f0 'O I d f/d T March 1991 849 , Protected against damage as a result o f a short-circuited high-voltage transistor RC oscillator w ith synchronization input QUICK REFERENCE D ATA - parameter Supply voltage Supply current O utput pulse
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TDA8380 tda8380 power supply

transistor d 1991 ar

Abstract: 5BS transistor Respective Manufacturer N AMER PHILIPS/DISCRETE bRE T> Silicon diffused power transistor bìE D Bi bbSB'ni , 15MH lB(end)=0.9A;-Vdr = 4V tf typ. 0.9 MS tS typ. 7.5 MS Ar December 1991 99 This , /DISCRETE bRE T> Silicon diffused power transistor b^E D â  bbS3131 ÃÃEflETl 05T I BU705F BU705DF I , N AMER PHILIPS/DISCRETE blE D â  bbSBTBl ÃD2ÃEÃ7 bEI I BU705F BU705DF IAPX I SILICON , 21.5 max â'¢-0.7 2.0 December 1991 97 This Material Copyrighted By Its Respective Manufacturer N
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5BS transistor 15MH S0T199

BA570

Abstract: agc diode 734 TEA1065 control transistor (see Fig.4; rds = 3V gs/3 I d at V gs = Vos). Current regulator mode The , DC resistance of the subscriber line (Rune) ar|d the DC voltage on the subscriber set (see Fig-4). If , control transistor and I d o c is the current sunk by pin DOC (I d o c = 0 in the voltage regulator m ode , tap R13 Fig.13 Internal current lim iting transistor. June 1991 744 ps oem iconcuc:ors , amplifier. Voltage gain is defined as Gv = 20 Log h V Vi I. June 1991 750 June 1991 fr o m d ia l
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BA570 agc diode 734 TEA1065T
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