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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor c815

Catalog Datasheet MFG & Type PDF Document Tags

transistor c815

Abstract: c815 transistor . This pin provides the drive for the regulator's pass transistor . PHASE1 , PHASE2 (Pin26 and 2) SS , drive for the 1.5V regulator 's pass transistor. FB3 (Pin 19) Connect this pin to the output of the 1.5V , NC VSEN2 R820 5.1R VTT 1.25V/3.5A C816 330uF C815 330uF R821 100R AGP 3.3V Q800 APM3055 , C816 330uF C815 330uF C814 10uF C812 220pF C801 1uF R819 5.1R 1 2 3 4 5 6 7 8 9 10 11 U G A
ANPEC Electronics
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transistor c815 c815 transistor transistor D800 APW 7313 C817 transistor c814 APW3007 MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015

transistor c815

Abstract: pdf transistor c815 transistor . 5V supply voltage. A high frequency capacitor (0.1 to 1uF) must be placed close to this pin , external MOSFET. This pin provides the drive for the 1.5V regulator's pass transistor. PGND (Pin 24 , GND 12 C815 330uF C816 330uF 20 VSEN2 V5 NC FB2 11 FB3 GATE3 10 , ., 2003 8 C816 330uF C815 330uF 24 R821 100R 23 22 21 20 AGP 3.3V 19 18
ANPEC Electronics
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pdf transistor c815 c815 R819 C807 330uf transistor apm3055 equivalent ut 803B

transistor c815

Abstract: ATF-511P8 depletion mode transistor, this enhancement mode device only requires a single positive power supply. This means a positive voltage is placed on the drain and on the gate in order for this transistor to turn on , . Low Pass Circuit. Transistor Q1 is configured with its base and collector tied together. This acts , is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit , . Table 1. Bill of Materials. C1=6.8 pF C2=6.8 pF C3=10 pF C4, C5=0.1 µF C6=1 µF C8=15 pF L1=3.3 nH
Avago Technologies
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ATF-511P8 MGA-53543 BCV62C LL1005-FH3N3S RG200D Medium Power Bipolar Transistors rohm ATF54143 5988-9547EN AV02-0972EN

equivalent transistor C5001

Abstract: C5001 transistor and R3 = 47 Transistor Q1 is configured with its base and collector tied together. This acts as a , transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , transistor at high bias, a better model is needed. The model can be downloaded from Agilent's web-site , of the PNP transistors is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to , Capacitor C8=1.5 pF 0402 Chip Capacitor L1, L2=12 nH TOKO LL1608-FS12N L3=10 nH TOKO
Agilent Technologies
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ATF-58143 equivalent transistor C5001 C5001 transistor ATF581433 transistor C633 ATF58143 5988-9554EN MTT-28 AN-1281 ATF-54143 AN-1222

TRANSISTOR C815

Abstract: equivalent transistor C5001 stabilised, and therefore Ids and Vds are also kept stable. Transistor Q1 is configured with its base and , is high. Thus by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit , -1dB) and output third order intercept point (OPI3). The non-linear transistor model used in the simulation , . To properly model the exceptionally high linearity of the E-PHEMT transistor at high bias, a better , . C7= 33pF 0402 Chip Capacitor C8=1.5 pF 0402 Chip Capacitor L1, L2=12 nH TOKO
Avago Technologies
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AV02-0913EN surface mount transistor c633 SOT-343 AMA A fet curtice LL1005-FH2N2S transistor C5001 900MH 5989-9554EN

R747

Abstract: transistor c815 DC biasing, but unlike a depletion mode transistor, this enhancement mode device only requires a , order for this transistor to turn on. This application note walks through the RF and DC design , therefore Ids and Vds are also kept stable. Transistor Q1 is configured with its base and collector tied , 0603 Chip Capacitor C6=1 µF 0805 Chip Capacitor C8=15 pF 0402 Chip Capacitor L1=3.3 nH , forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain current
Agilent Technologies
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R747 LL1005-FH4N7S BCV62B

1-450-358-11

Abstract: SI-18752 side which enables seeing. · Indication of transistor. C Q B E Note: The components identified , INDUCTOR 10uH < TRANSISTOR > Q201 Q202 Q218 Q219 8-729-900-63 8-729-900-36 8-729-119-76 8-729-900-36 TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR DTA124ES DTC124ES 2SA1175-HFE DTC124ES , 1uF 1uF 1000uF 470uF 0.001uF 20% 20% 20% 20% 50V 50V 25V 25V 50V C814 C815 C816 , . Description Remark Q760 Q761 Q850 8-729-202-67 FET 2SK246-GR3 8-729-141-30 TRANSISTOR 2SC3623A
Sony
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RM-U150 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse TA-VE150 RY901 PC900

transistor c815

Abstract: c815 (OTA) SECTION AND OVERVIEW The symbol for the OTA section is similar to that of a bipolar transistor, and the self-based OTA can be viewed as a quasi-ideal transistor or as a voltage-controlled current source. Application circuits for the OTA look and operate much like transistor circuitsâ'"the bipolar transistor, also, is a voltage-controlled current source. Like a transistor, it has three terminals: a , OTA is far more linear than a bipolar transistor; 4) The transconductance can be adjusted with an
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OCR Scan
SHC615 CMOS differential amplifier cascode SHC615AP i100u common emitter amplifier d0245 750MH 280MH 5M-1982 D02454

optocoupler c814

Abstract: NEC c151 diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 1N4007 1 D102 C101 4N7 , DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 2 3 1 1 C101 4N7/50V , : EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 2 3 1 1 C101 4N7 , C814 22N/25V 1 1 1 2 R830 1K5 R820 10K/1% 1 2 1 1 2 2 C815 22N/25V
Melexis
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optocoupler c814 NEC c151 nec c815 TR-303 c814 optocoupler IC802 MLX32001 MLX32001EE-SO16WREEL MLX32001EE-SO16WTUBE MLX32001FA-SO16WREEL MLX32001FA-SO16WTUBE J-STD-020A

c151 nec

Abstract: optocoupler c814 diagram NOTE: EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 1N4007 1 D102 C101 4N7 , DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 2 3 1 1 C101 4N7/50V , : EACH DCO TRANSISTOR MAY DISSIPATE IN WORST CASE 600mW 2 T151 DN3545N8 2 3 1 1 C101 4N7 , C814 22N/25V 1 1 1 2 R830 1K5 R820 10K/1% 1 2 1 1 2 2 C815 22N/25V
Melexis
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c151 nec NEC C812 nec c811 TR303 c803 R837 20K/1 470P/25V IC801 100N/25V BC547B 47P/25V

TRANSISTOR D2102

Abstract: L3003 TRANSISTOR TRANSISTOR D855 D856 FML22SLF610 RU4AMLF-M1 DIODE DIODE Q1105 Q1106 BC847B BC847B TRANSISTOR TRANSISTOR D857 D858 MTZJT-775.1C MA165TA5 DIODE DIODE Q1107 Q1108 BC847B BC847B TRANSISTOR TRANSISTOR D859 D861 MA165TA5 MA165TA5 DIODE DIODE Q2101 Q2102 BC857B BC857B TRANSISTOR TRANSISTOR D862 D863 MTZJT-7736A MA165TA5 DIODE DIODE Q2103 Q2301 BC857B BC847B TRANSISTOR TRANSISTOR D865 D866 MA165TA5 MA165TA5 DIODE DIODE
Panasonic
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TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 TX-28/25/21MD4 SM-98017 TX-28MD4 TX-25MD4 TX-21MD4 TZS6EZ002

diagram transistor tt 2140

Abstract: SF128 DC biasing. Unlike a depletion mode transistor, this enhancement mode device only requires a single , transistor to turn on. This application note walks through the RF and DC design employed in a single FET , more useful characteristics of a current mirror. For example, transistor Q1 is configured with its , voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain current similar to a , Configuration. C1=1.2 pF Phycomp 0402CG129C9B200 C2,C8=1.5 pF Phycomp 0402CG159C9B200 C3=4.7 pF
Agilent Technologies
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ATF-521P8 diagram transistor tt 2140 SF128 Transistor TT 2140 ba 662 CHIP OBSOLETES transistor Amp 2054 equivalent LL1005-FS39 5988-9974EN

Transistor TT 2140

Abstract: diagram transistor tt 2140 transistor, this enhancement mode device only requires a single positive power supply, which means a positive voltage is placed on the drain and gate in order for the transistor to turn on. This , . For example, transistor Q1 is configured with its base and collector tied together. This acts as a , reference current IR. Thus, by forcing the emitter voltage (VE) of transistor Q1 equal to Vds , this , Configuration. C1=1.2 pF Phycomp 0402CG129C9B200 C2,C8=1.5 pF Phycomp 0402CG159C9B200 C3=4.7 pF
Agilent Technologies
Original
MO229 c7150 TT 2170 0402C 5988-7787EN 5988-8403EN

Transistor TT 2140

Abstract: SF128 biasing. Unlike a depletion mode transistor, this en hancement mode device only requires a single , transistor to turn on. This application note walks through the RF and DC design employed in a single FET , characteristics of a current mirror. For example, transistor Q1 is configured with its base and collector tied , , by forcing the emitter voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain , (GHz) Phycomp 0402CG129C9B200 C2,C8=1.5 pF Phycomp 0402CG159C9B200 Phycomp 06032F104M8B200 C5
Avago Technologies
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GaAs pHEMT Low Noise 2X2 TRANSISTOR D 1786 opt 300 1044341 UMTS AND GSM AND PCS 362 marking code sot 23-6 ATF521P8 AV02-0846EN

Transistor TT 2140

Abstract: diagram transistor tt 2140 requiring input and output matching as well as DC biasing. Unlike a depletion mode transistor, this , on the drain and gate in order for the transistor to turn on. This application note walks through the , characteristics of a current mirror. For example, transistor Q1 is configured with its base and collector tied , Vdd R4 Vg Q2 C4 R6 C8 C5 Vds R3 C6 Thus, by forcing the emitter voltage (VE) of transistor Q1 , Channel Power Configuration. C1=1.2 pF C2,C8=1.5 pF C3=4.7 pF C4,C6=.1 µF C5=1 µF C7=150 pF L1=1.0 nH L2
Agilent Technologies
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x band GaAs MESFET 261 L439 transistor s11 s12 s21 s22 1154 sf lna

GETEK FR4

Abstract: 113 marking code transistor ROHM DC biasing. Unlike a depletion mode transistor, this enhancement mode device only requires a single , transistor to turn on. This application note walks through the RF and DC design employed in a single FET , emitter voltage (VE) of transistor Q1 equal to Vds, this circuit regulates the drain current similar to , MHz Offset. -10 S22 -15 1.6 C1=1.2 pF Phycomp 0402CG129C9B200 C2,C8=1.5 pF Phycomp , design. This is done to ensure that for a given ambient tem perature the transistor's channel does not
Avago Technologies
Original
GETEK FR4 113 marking code transistor ROHM mga 017 Philips sot 23-5 package marking transistor tt 2170 low noise high frequency HEMT from agilent

d667 transistor

Abstract: nec tokin oe 128 Transistor (TFT) liquid-crystal display (LCD) displaying 32-bit high colour up to 1400X1050 Super eXtended , C817 C816 C815 C814 C813 C812 C811 C810 C809 C581 R371 R374 C801 C879 C600 D26 PR123 O
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d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet diode tp806 CPD0304020C1 CF-73 CF-731 EN60825 HSGND11 C1611

r305 finger print module

Abstract: bcm4306 board via p42 pin 5. Via transistor TR21 the signal is inverted and fed to the large signal PCB via
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r305 finger print module bcm4306 toshiba c850 free C828 R305 finger print scan module C828 3-pin transistor
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