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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor c018

Catalog Datasheet MFG & Type PDF Document Tags

db3 c018

Abstract: w21 transistor , requires only the addition of a single PNP bipolar junction transistor and a few resistors. Compared to , =4.25 nH C=0.18 pF MLIN TL56 W=21 mil L=250 mil MLIN TL76 Subst="MSub1" W=21 mil L=20 mil , R=17 kOhm L=1.75 nH C=0.18 pF VIA2 V11 D=10 mil H=10 mil T=1.5 mil Rho=1.0 W=20mil 1 , PRLC 5 R=1.7 kOhm L=1.75 nH C=0.18 pF SRL SRL7 R=47 Ohm L=0.5 nH MLIN TL57 W=21 mil L
Avago Technologies
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transistor c018

Abstract: smd transistor c014 : CLKOUT3 R80 C018 20 19 18 17 16 15 14 13 1000PF C24 EGND R24 , PCB mount Q1 1 SOT23 SOT23 Fairchild N-Channel EMF effect transistor (Pb-free , C0, C02, C05, C010, C013, C014, C018 7 47µF 10% 10V 1210 CAP_1210 Murata
Intersil
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transistor c018 smd transistor c014 ISL8225MEVAL2Z ISL8225M 100MH AN1789

transistor c018

Abstract: Avoid Inrush Current Quick Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 â , 1.5 2 2.5 3 3.5 4 VIN (V) VIN (V) C018 C017 Figure 17. Figure 18 , 3 4 VIN (V) C018 Figure 19. 10 Submit Documentation Feedback Copyright © 2013
Texas Instruments
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TPS22920L A114-B ISO/TS16949
Abstract: Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 ­ 4000-V Human-Body Model (A114-B , 3.5 4 C018 Figure 17. tON vs VIN 2500 Figure 18. -40C 25C 85C 1500 tON (µs) 1000 500 0 0 1 2 VIN (V) C018 2000 3 4 Figure 19. 10 Submit Documentation Feedback Product Texas Instruments
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Abstract: Avoid Inrush Current Quick Output Discharge (QOD) Transistor ESD Performance Tested Per JESD 22 â , 1.5 2 2.5 3 3.5 4 VIN (V) VIN (V) C018 C017 Figure 17. Figure 18 , 3 4 VIN (V) C018 Figure 19. 10 Submit Documentation Feedback Copyright © 2013 Texas Instruments
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NCP114

Abstract: NCP114AMX100TCG transistor is turnedâ'off. The EN pin has internal pullâ'down current source with typ. value of 300 nA , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E
ON Semiconductor
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NCP114 NCP114AMX100TCG transistor C 6093 equivalent NCP114BMX180TCG 517CU NCP114/D

NCP114

Abstract: transistor is turnedâ'off. The EN pin has internal pullâ'down current source with typ. value of 300 nA , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP
ON Semiconductor
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Abstract: voltage and the active discharge transistor is turnedâ'off. The EN pin has internal pullâ'down current , to be disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is , TA = 25°C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP ON Semiconductor
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NCP103 NCP103/D
Abstract: . The NCP103 regulates the output voltage and the active discharge transistor is turnedâ'off. The EN , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 ON Semiconductor
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NCP114

Abstract: transistor is turnedâ'off. The EN pin has internal pullâ'down current source with typ. value of 300 nA , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18
ON Semiconductor
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NCP114

Abstract: transistor is turnedâ'off. The EN pin has internal pullâ'down current source with typ. value of 300 nA , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5
ON Semiconductor
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NCP114

Abstract: NCP114BMX180TCG transistor is turnedâ'off. The EN pin has internal pullâ'down current source with typ. value of 300 nA , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , . 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP VIEW A 0.10 C
ON Semiconductor
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Abstract: voltage and the active discharge transistor is turnedâ'off. The EN pin has internal pullâ'down current , to be disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is , TA = 25°C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward , FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 ON Semiconductor
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Abstract: . The NCP103 regulates the output voltage and the active discharge transistor is turnedâ'off. The EN , disabled. The pass transistor is turnedâ'off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND , °C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the , AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP ON Semiconductor
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Abstract: Quick Output Discharge Transistor ESD Performance Tested Per JESD 22 â'" 5000-V Human-Body Model , Temperature (Æ'C) 10 35 60 85 Temperature (Æ'C) C017 VIN C018 TURN-ON TIME vs Texas Instruments
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TPS22924D

transistor c018

Abstract: Output Discharge Transistor ESD Performance Tested Per JESD 22 ­ 5000-V Human-Body Model (A114-B, Class , 10O 4000 -40 -15 10 35 60 85 C017 CL = 0.1µF, CIN = 1µF, RL = 10O 1 -40 -15 10 35 60 85 C018
Texas Instruments
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transistor C017

Abstract: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21
Texas Instruments
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transistor C017
Abstract: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21 Texas Instruments
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UCC27532

Abstract: Discrete Transistor Pair Drive (providing easy interface with controller) CMOS Compatible Input-Logic , Voltage (V) C018 Figure 22. Submit Documentation Feedback Copyright © 2013, Texas Instruments
Texas Instruments
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UCC27532 UCC27532-Q1 35-VMAX AEC-Q100
Abstract: © pull-down transistor for quick output discharge (QOD) when the switch is turned off. The TPS22961 is , © C018 CL = 0.1µF VBIAS = 5V RL = 10Ω Figure 20. tON vs VIN CL = 0.1µF Figure 21 Texas Instruments
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