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60932-2 TE's AMP STEEL, TIN FINISH, WIRE TERMINAL visit Digikey
60938-1 TE's AMP FASTON Uninsulated Receptacles & Housings; .250 FAST REC 18-14 BR ( AMP ) visit Digikey
6093 Keystone Electronics Corp Interconnection Device visit Digikey
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transistor c 6093

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC , transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver. 2 .8± 0.2 1.5 , 100 fr C ob Output Capacitance Insertion Gain 0.7 GHz I S21e I 2 5.0 0.9 = , TYPICAL CHARACTERISTICS (T a = 25 °C) O U TP U T C A PAC ITAN C E vs. C O LLEC TO R TO BASE VOLTAGE GAIN BANDW IDTH PR O D UC T vs. 2.0 Cob-Output C apacitance-pF 1 C D 1.0 T3 O -
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t 3866 power transistor transistor 3866 s transistor 3866 SC-59
Abstract: +125°C -62 to +150°C +125°C Thermal Characteristics1 0JC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AU @ 90°C) F m /7 5 °C /W 102/340 , W tw l H E W L E T T müHM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 , '" IP3 IP2 h p2 Id Typical Guaranteed Specifications Tc = 25°C Tc = 0 to 50°C Tc = -5 5 to +85°C Characteristic Frequency Range Small Signal Gain (Min.) Gain Flatness (Max.) Noise Figure -
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44M75
Abstract: Maximum + 17 Volts + 13 dBm -55 to +125°C -62 to + 150°C +125°C 105/75°C/W0.K Active Transistor Power Dissipation 102/340 mWJunction Temperature Above Case Temperature 11/26°C2 MTBF (MIL-HDBK-217E, A,!K , = 25°C Tc = 0 to 50°C Tc = -55 to +85°C 10-1500 10-1500 10-1500 BW Frequency Range 21.0 20.0 22.0 GP , MHz dB dB dB dBm - - dBm dBm dBm mA 1 Typical Performance Over Temperature Key: +25°C+85°C ·55°C g 23 (@ +15 VDC unless otherwise noted) Gain 3 22 300 600 900 1200 600 900 1200 F re q u -
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38339 Avantek amplifier UTC transistor 20622 Avantek* UTC UTC--21
Abstract: DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV , epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver. +0.1 , Maximum Voltages and Current 0.16 -0.06 0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) VCBO 20 V , 125 C Storage Temperature Tstg to +125 C 55 PIN CONNECTIONS 1. Emitter 2. Base , bandwidth product +0.1 1.5 0.4 -0.05 FEATURES ELECTRICAL CHARACTERISTICS (TA = 25 C NEC
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NEC 2533 3059 npn transistor t72 marking IC Marking 812 s-parameter s11 s12 s21 10000
Abstract: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC , transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV rceiver. +0.1 0.4 -0.05 , CONDITIONS VCE = 5 V, IC = 5 mA *1 200 5.5 Cob Insertion Gain TYP. V V V mA mW °C °C Collector Cutoff Current Collector Saturation Voltage SYMBOL Marking 0.16 -0.06 20 12 3.0 30 150 125 -55 to +125 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC 3 NEC
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NEC k 787 2533 nec PU10035EJ01V0DS
Abstract: to C onform to V D E Requirem ents · Long Term Stability · H igh C urrent Transfer R atios, 3 Groups S F H 609-1,40 to 8 0 % S F H 609-2, 63 to 125% S F H 609-3,100 to 2 0 0 % · 5300 Volt Isolation (1 M inute) · Storage Tem perature - 4 0 ° to + 1 5 0 °C · VCEsal 0.25 ( < 0.4) Volt lF = 10 m A , lc = , ) Emitter-base voltage , 0 - 4 0 to + 1 0 0 100 260 °C °C °C °C D ESCRIPTIO N The optically coupled isolator SFH 609 -
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transistor c 6091 transistor C 6092 IOR 5300 diode gde 78 D0D3347 SFH609 E52744 257-7910/TWX
Abstract: brings the base current to the transistor and is RF grounded by C2. The long transmissions line to and , Operating Temperature -40 to +80 -40 to +80 Units Notes V mA GHz dB dB dBm dBm °C Low , Gain Average C / IM3 TOI (dBm) (dBm) (dB) (dBm) IM3 (dBc) Pavg-avg (dBm , -80.97 -78.80 -75.87 -72.48 -69.83 -66.67 -63.08 -60.93 -57.28 -54.46 -51.67 -48.44 -45.41 California Eastern Laboratories
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AN1037 NE662M04 2052-1215-00 rf ic 3358 NE622M04 2052-1215 NE662M04-EVAL
Abstract: Cascadable Amplifier 10 to 1500 MHz © A V A N T S S C FEATURES APPLICATIONS â'¢ Frequency Range , (Measured in a 50-ohm system @ +15 V D C nominal unless otherwise noted) Guaranteed Specifications Typical Tc = 25°C Characteristic Symbol - amplifier, and a low VSW R is maintained through , Current Unit T0 = 0s to 50â'C 10-1500 22.0 ±0.4 4.0 +10.0 â'" â'" +19.0 +22.0 +27.0 60 , otherwise no ted )_ KEY: +25°C +85°C-5 5 °C -Gain -
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Abstract: Maximum +17 Volts +13 dBm â'"55 to +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) 105/75°C/W2 102/340 mW2 11/26°C 2 586,100 Hrs. Notes: 1. Values refer to , GP â'" NF P 1dB â'" â'" IP3 IP2 HP2 ID Typical Guaranteed Specifications TC = 25°C TC = 0 to 50°C TC = â'"55 to +85°C Characteristic Frequency Range Small Signal Gain (Min.) Gain Teledyne Cougar
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A3029
Abstract: Temperature "R" Series Burn-In Temperature Maximum +17 Volts +13 dBm ­55 to +125°C ­62 to +150°C +125 °C RFIN RFOUT Thermal Characteristics1 JC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) 105/75°C/W2 102/340 mW2 11/26°C 2 586,100 Hrs , Order Intercept Point DC Current Typical Guaranteed Specifications TC = 25°C TC = 0 to 50°C TC = ­55 to +85°C 10-1500 22.0 ± 0.4 4.0 +10.0 - - +19.0 +22.0 +27.0 60 10-1500 21.0 ± 1.5 4.5 +7.0 2.0:1 2.0:1 - Teledyne Cougar
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5963-3240E
Abstract: +125°C â'"62 to +150°C +12 VDC 400+125°C 800 1200 1600 Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) 105/75°C/W2 102/340 mW2 11/26°C2 586,100 Hrs. Notes: 1. For further information, see , Typical Guaranteed Specifications TC = 25°C TC = 0 to 50°C TC = â'"55 to +85°C Characteristic , noted) Key: +25°C +85°C -55°C Noise Figure Gain 24 4.0 Noise Figure, dB RFOUT Agilent Technologies
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1500MH 5963-2496E
Abstract: ISOCOfl C O M P O N E N T S LTD .V ?SC D â  4flflt,S10 â¡DOOiat, a i l â , > WF3B) ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature.â'" 55° C to + 1 5 0 ° C Operating Temperature. â'" 55° Cto + 1 0 0 ° C Lead Soldering Temperature (1/16 inch (1 -6 mm) from case for 10 seconds). .2 6 0 ° C , (derate linearly 1 â  33m W /°C above 25°C).100mW DESCRIPTION The SFH 609 is a -
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transistor tt 6093 SFH609-1 SFH609-2 SFH609-3
Abstract: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF , at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO , Collector Current V 50 mA 100 mW Junction Temperature IC PC Tj 150 °C Storage Temperature Tstg -55 to +150 °C Collector Dissipation Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current SANYO Electric
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Abstract: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF , at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit 15 , °C Storage Temperature Tstg -55 to +150 °C Collector Current Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector , 3 5 IT05403 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 SANYO Electric
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7807 transistor IC 4047 BE
Abstract: Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier , . Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter , Temperature PC Tj Storage Temperature 100 Tstg mW 150 °C -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings , 3 5 IT05403 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 SANYO Electric
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a11041 IC 4093 BE transistor a1104 15GN01SA ENA1104 A1104-5/5
Abstract: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF , . 1.5 Surface mount package EIAJ: SC-59 o - ABSOLUTE MAXIMUM RATINGS (T a = 25 °C) Maximum , 20 12 3.0 30 150 125 -5 5 to +125 V V V mA mW °C °C PIN CONNECTIONS z 1. 2. 3. Emitter Base Collector Marking Ti Tstg ELECTRICAL CHARACTERISTICS (T a = 25 °C) CHARACTERISTIC Collector -
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transistor NEC D 822 P NEC D 822 P Nec b 616 lem 703
Abstract: specification NPN 12 GHz wideband transistor BFG33; BFG33/X F (dB) 1 = 2 C Hz , transistor £ BFG33; BFG33/X FEATURES â'¢ High power gain â'¢ Low noise figure â'¢ Gold metallization ensures excellent reliability. DESCRIPTION The BFG33 is a silicon npn transistor, primarily intended for , ). The transistor is encapsulated in a 4-pin, dual-emitter plastic SOT143 envelope. QUICK REFERENCE , ; f = 2 GHz â'" 12 â'" GHz gum maximum unilateral power gain lc= 15 mA; VCE=5V; Tamb=25°C;f=2 GHz - -
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zo 107 NA P 611 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ RJ50 UCD123 MSB014
Abstract: wideband transistor £ BFG33; BFG33/X N AMER PHILIPS/DISCRETE b7E ]> FEATURES â'¢ High power gain â , silicon npn transistor, primarily intended for wideband applications in the 2 GHz range, such as portable RF communications equipment (DECT, PCN cellular). The transistor is encapsulated in a 4 , HFE DC current gain lc= 15 mA; VCE = 5 V 50 90 - feedback capacitance |c = ic = 0; VCB = 5 V; f = 1 , maximum unilateral power gain lc= 15 mA; VCE= 5 V; Tamb = 25°C;f = 2GHz - 12.5 - dB F noise figure r.-r -
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7408 philips MCD122 HCC80 IC 7408 ti Hcc 036-0 lc 7408
Abstract: b?E D- NPN 12 GHz wideband transistor BFG33; BFG33/X MD C J15 120 hF E 80 , bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor , The BFG33 is a silicon npn transistor, primarily intended for wideband applications in the 2 GHz , transistor is encapsulated in a 4-pin, dual-emitter plastic SOT143 envelope. QUICK REFERENCE DATA SYMBOL , 9 V VcEO collector-emitter voltage open base - - 7 V *c DC collector -
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transistor vc 548
Abstract: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · SMALL , frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low , 0.1 0.7 0 ~ 0.1 0.15 - 0.05 +0.10 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is -
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transistor pt 6007 NPN transistor 9418 c 5929 transistor C 5478 transistor 9418 transistor transistor 9747 NE686
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