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TMS320C6412AZDK5 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments
TMS320C6412AZDKA5 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments Buy
TMS320C6412AGNZ7 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments
TMS320C6412AZNZ5 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments Buy
TMS320C6412AGNZ6 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments Buy
TMS320C6412AZDK7 Texas Instruments Fixed-Point Digital Signal Processor 548-FCBGA visit Texas Instruments

transistor c 548 c

Catalog Datasheet MFG & Type PDF Document Tags

transistor C 548 B

Abstract: transistor c 548 UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC , MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT 80 50 30 , ~ +150 V V V mA mW °C °C VCBO VCEO VEBO Ic Pc Tj TSTG ELECTRICAL
Unisonic Technologies
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MIL-PRF-39016

Abstract: cecc 16101 Operating Power at P.I. 5.30,0 Vdc 5.26,5 Vdc 130 (mW) 5.30,0 Vdc 5.26,5 Vdc 5.48,0 Vdc 150 130 130 150 60 5.48,0 Vdc 5.26,5 Vdc 70 60 60 100 5.26,5 Vdc , / 28 Vdc 5.28,0 Vdc 5.48,0 Vdc 150 140 60 DPDT 1A / 28 Vdc 5.48,0 Vdc 1A / 28 Vdc 2A / 28 Vdc 2A / 28 Vdc 2A / 28 Vdc 5.48,0 Vdc 5.26,5 Vdc 5.48,0 Vdc 5.48,0 , / 28 Vdc 5A / 28 Vdc 6.26,5 Vdc 5.48,0 Vdc 5.48,0 Vdc 6.76,0 Vdc 26,5.115 Vac
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transistor C 548 B

Abstract: TRANSISTOR c 547 B UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND , TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS , CHARACTERISTICS QW-R201-037.D 3 of 4 BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no , BC547G-x-T92-K BC548L-x-T92-B BC548G-x-T92-B BC548L-x-T92-K BC548G-x-T92-K Note: Pin Assignment: C , 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk
Unisonic Technologies
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transistor C 548 B TRANSISTOR c 547 B transistor bc547 specifications BC546/547/548 BC546 BC547 BC548 BC546L-
Abstract: UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , /547/548 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Current gain , -037,A UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC , MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT 80 50 , CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Unisonic Technologies
Original
100MH

transistor C 548 B

Abstract: transistor c 548 NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER â'¢ HIGH , MAXIMUM RATINGS (Ta=25°C ) Symbol Characteristic Collector Base Voltage :BC546 :BC 547/550 :BC 548/549 Collector Emitter Voltage :BC546 :BC 547/550 :BC548/549 Emitter-Base Voltage :BC546/547 :B C 548/549/550 Collector Current (DC) Collector Dissipation Junction Temperature Storage , Capacitance Emitter Base Capacitance Noise Figure :B C 546/547/548 :BC549/550 :BC549 :BC550 Cebo
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transistor c 548 TR BC 548 BC546/547/548/549/550 BCS56

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 , 547/bc 550 bc 548/bc 549 The bc 547, bc 548 in A-b-c groups and bc 549, bc 550 in b and c groups Les BC 547 et BC 548 dans les groupes A-B-C et Les BC 549 et BC 550 dans les groupes B et C â cm 200 mA , , BC 548, BC 549, BC 550 NOTES STATIC CHARACTERISTICS T u=25°C (Unless otherwise stated , , BC 548, BC 549, BC 550 STATIC CHARACTERISTICS x , -25=C (Unless otherwise stated) CARACTERISTIQUES
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Transistor - BC 547, CL 100 bc 104 npn transistor bc 408 equivalent BC548BC bc 558 equivalent bc 103 546/BC 547/BC 549/BC CB-76

transistor bc547 specifications

Abstract: Tape Box Bulk 1 of 4 QW-R201-037.C BC546/547/548  NPN EPITAXIAL SILICON TRANSISTOR , UNISO TE NIC CHNO G SCO LTD LO IE ., BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWI T , ) 100 Capacitance, Cob(pF)  NPN EPITAXIAL SILICON TRANSISTOR 3 of 4 QW-R201-037.C BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment , BC548G-x-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter www.unisonic.com.tw Copyright © 2013
Unisonic Technologies
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BC546G- BC547L- BC547G- BC548L-

bc 103 transistor

Abstract: bc 106 transistor / BC 547 ^ebo 6 V HN / BC 548, HN / BC 549 ^ebo 5 V Collector Current 'c 100 mA Peak Collector , HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A , low-noise type and available in groups B and C. As complementary types, the PNP transistors BC556.BC559 , configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE OUTLINE" on page 80 for the available pin options
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bc 103 transistor bc 106 transistor transistor BC 549 transistor bc 102 transistor bc 103 of bc 547 b

CB 548 transistor

Abstract: transistor C 548 B NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER â'¢ HIGH , Capacitance Noise Figure : BC546/547/548 C cB O Ic B O h FE C ebo NF : BC549/550 : BC549 , dB 1.4 3 dB NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 STATIC , -92 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C h a ra c te ris tic Sym bol U n it 80 50 30 V V V , stg °c °c 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (TA =25°C) C h a
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CB 548 transistor BC560 BC547/550 BC548/549/550 15000MH

transistor C 548 B

Abstract: transistor c 548 BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH , RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector Base Voltage VcbO : BC546 80 V , Temperature Tstg -65 ~ 150 °C TO-92 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (TA=25°C , VEB= =0.5V, f =1 MHz 9 PF Noise Figure : BC546/547/548 NF Vce= =5V, lc= 200nA 2 10 dB : BC549/550 , £1, -15000MHz 1.4 3 dB hFE CLASSIFICATION Classification A B C hFE 110-220 200-450 420-800 FAIRCHILD
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bc548 transistor 547 TRANSISTOR transistor b 548 bc546 fairchild transistor bc547 transistor 547 b 50JJA

transistor vc 548

Abstract: 547 transistor BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER â'¢ HIGH , MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector Base Voltage VC0O BC546 80 , Storage Temperature Tstg -65~150 °C 3 ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol , 1MHz 9 PF Noise Figure :BC546/547/548 NF VCe = 5V, lc =200^A, 2 10 dB :BC549/550 f=1 KHz Rg , hFE CLASSIFICATION Classification A B C hFE 1 10-220 200-450 420-800 501 ELECTRONICS â  7Tb414E
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transistor vc 548 BC546.547 transistor NPN 548 transistor C 547 transistor c 548 c TRANSISTOR BC 550 b

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC5481» Q62702-C689 BC 548 VI Q62702-C689-V4 BC 548 A Q62702-C689-V1 BC 548 B Q62702-C689-V2 BC 548 C , BC 548, BC 550 BC 550 hFE group VI A B C k hF e hFE hfs mA UJlB Idh Idh Idh 0.01 90 150 270 2 , BC 547 BC 548 BC 549 BC 550 Transition frequency (VCE = 5 V; /c = 10 mA; f = 100 MHz) h 300 , 546, BC 547, BC 548, BC 549, BC 550 0 50 100 150 °C DC current gain hf£ = f (/c) Vce = 5 V; ramb = , parameter (common-emitter configuration) BC 546, BC B47, BC 548, BC 549, BC 550 icP 50°c â firn 25°c
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BC650 transistor 2sc 548 equivalent transistor bc 649 BC660 2sC 548 B Bc 648 Bc 649 BC5461 Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688

transistor c 548

Abstract: transistor C 548 B BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V · L O W NOISE: BC549, B C5S0 · Complement to BC556 . B C 560 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS < TA =25t) C h aracte ristic Collector Base Voltage .BC546 :BC547/550 :BC548/549 , /547/548 :BC549/550 :BC549 :BC550 NF Sym b o l IcBO h FE T est C o n d itio n s M in Typ M , CLASSIFICATION C la s s ific a tio n hFE A 110-220 B 200-450 C 420-800 518 ELECTRONICS BC546/547/548/549
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transistor C 547 c C 547 B C 547 transistor C 547 C c 547 c transistor bc550 transistor 30-15000MH

C 548 B

Abstract: B549C 546 B BC 5471 1 BC 547 VI BC 547 A BC 547 B BC 5481 » BC 548 VI BC 548 A BC 548 B BC 548 C Ordering , ) 120 BC 546 BC 547, BC 549 BC 548, BC 550 B *FE k/h 150 290 (200 to 450) 200 BC 548, BC 549, BC 550 C , ; Ic = 200 ^A; flg = 2 kQ; f = 10 to 50 Hz; 7am b = 25 °C) h CcBO c ebo BC 546 BC 547 BC 548 300 , (3.2 to 8.5) 2 330 30 ( , = parameter (common-emltter configuration) BC 546 B, B C 547 B, B C 548 B. BC 549 B, BC 550 B
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C 548 B B549C TRANSISTOR BC650 transistor bc 549 equivalent C547B TRANSISTOR BC 550 c Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q62702-C689-V3 Q62702-C690 Q62702-C690-V1

BC546 "cross reference"

Abstract: transistor BC 458 . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C VCEO Collector-Emitter Voltage , Characteristics Ta=25°C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC
Fairchild Semiconductor
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BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA BC546ATA BC546A BC546CBU BC546BBU BC546ABU BC546B
Abstract: z Ul LL® IN 1A HI-546, HI-547, HI-548, HI-549 Pinouts (C o n tin u e d ) HI1 , -546/547/548/549-2 . -55°C to +125°C HI-546/547/548/549-4. -25°C to +85°C HI-546/547/548/549-5, -7 . 0°C to +75°C HI-546/547/548/549-9 . -40°C to +85°C Junction Temperature , 30 - pF HI-548 +25°C - 25 - - 25 - pF HI-549 +25°C - -
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HI-548

H11-0549-5

Abstract: H11-0548-5 îü > *» S1 m 2 10-141 HI-546, HI-547, HI-548, HI-549 Pinouts ( C o n t in u e d , . Operating Temperature Ranges . -55°C to +125°C HI-546/547/548/549-2 . HI-546/547/548/549-4. . . -25°C to +85°C . . . 0°C to +75°C HI-546/547/548/549-5, -7 . . -40°C to +85°C H I , Output Capacitance C D(0ff) HI-546 Hi-547 HI-548 HI-549 Input to Output Capacitance, C d s (o f f , , lD(0FF) HI-546 HI-547 HI-548 HI-549 With Input Overvoltage Applied, Id(OFF) Note 2 +25°C Full
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H11-0549-5 H11-0548-5 HIS48 HIS49 HI546 HI547 HI-506/507/508/509
Abstract: ® HI-546, HI-547, HI-548, HI-549 H R I A RS S E M I C O N D U C T O R Sin g le 16 and , -546, HI-547, HI-548, HI-549 Typical Performance Curves TA = 25°C, VSUppLY = ±15V: VAH = +4V: VAL = 0 , -546, HI-547, HI-548, HI-549 Typical Performance Curves TA = 25°C, V S U p p LY = ±15V: VAH = +4V , im ilar connection for H I-547/H I-548/H I-549. FIGURE 5A. SUPPLY C U R RENT vs TOGG LE FREQUENCY , mils x 19 mils x 105 A/cm TRANSISTOR COUNT: METALLIZATION: HI-548: 253 HI-549: 253 Type -
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I-548

H13-0547-5

Abstract: H19P0546 /549-2.-55°C to 125°C HI-546/547/548/549-5 . 0°C to 75°C HI-546/547/548/549-9 , -546, H1-547, HI-548, HI-549 Test Circuits and Waveforms TA = 25°C, Vsupply = ±15v VAH = 4V, VAL = 0.8V , -547, HI-548, HI-549 Test Circuits and Waveforms TA = 25°C, VSUppLY = ±15V: VAH = 4V, VAL = 0.8V: VREF = , . ACCESS TIME 11 HfAJ^mS HI-546, H1-547, HI-548, HI-549 Test Circuits and Waveforms TA = 25°C, VSUppLY , hÃARmS HI-546, H1-547, HI-548, HI-549 Data Sheet June 1999 File Number 3150.2 Single 16 and
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AN520 AN521 H13-0547-5 H19P0546 harris semiconductor package N20.35 HI-5461 IS09000 1-800-4-HARRIS

H19P0547-5

Abstract: H11-0548-2 /549-2. -55°C to 125°C HI-546/547/548/549-4. -25°C to 85°C HI-546/547/548/549-5 . 0°C to 75°C HI-546/547/548/549-9. -40°C to 85°C CAUTION: Stresses above , -547 HI-548 HI-549 Input to Output Capacitance, C qs(q ff ) DIGITAL INPUT CHARACTERISTICS Input Low , -546, HI-547, HI-548, HI-549 Typical Performance Curves T^ = 25°C, Vsupply = (Continued) 5V, V^h = +4V, V
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H19P0547-5 H11-0548-2 HI4-0547 H11-0546-2 H14-0547 transistor 548
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