NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistor TO-257AB Hermetic Package TOP VIEW PRODUCT SUMMARY V(brjdss rosáon, Id (A) 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE Case Isolated O 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise , Voltage Vqs ±20 Continuous Drain Current Tc = 25°C Id 9.0 A Tc = 100°c 5.5 Pulsed Drain Current1 'dm 36 Power Dissipation Tc = 25°C Pd 50 W Tc = 100°C 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C Lead Temperature ('/«" from case for 10 sec.) Tl 300 THERMAL ... | OCR Scan |
4 pages, |
2N7082 transistor c 4236 2N7082 abstract |
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| Abstract: ) [V] [V] [V] [A] [A] [W] [°C] [°C] [V] 6 3 10 15 4 6 Type No. , ts tf (max) (typ) (max) (max) (max) [us] [us] [us] [°C/W] [MHz] 2.5 , ) (min) [V] [V] [V] [A] [A] [W] [°C] [°C] [V] Type No. 2 1 3 1200 800 , 4236 4237 4583 4584 4585 hFE 150 800 8 1 1.5 150 Switching Transistors for , [°C/W] [MHz] 2.5 4.16 1.7 2.08 2.77 1.56 1.25 0.83 2.5 1.92 1.47 Outline 80-3 82-4 ... | Original |
3 pages, |
2SA1795 2SC4978 2SD1022 Bipolar Transistors 2SC4668 E-PACK ITO-220 TH 3L20 2SC4310 2SC4230 2SA1876 2SC4940 TH5P4 c 4235 transistor npn ITO-220 abstract |
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| Abstract: 37.33 27.92 18.52 Â41.56 Â70.65 Â23.85 Â14.31 Â0.95 11.57 23.13 35.33 42.36 54.18 63.59 , external transistor 17 VDD I - Positive power supply 18 SIL I Pull-High , . Â0.3V to 6V Storage Temperature. Â50°C to 125°C Input Voltage. VSSÂ0.3V to VDD+0.3V Operating Temperature. Â20°C to 70°C 4 21st Dec '95 HT8654 HT8654 (Ta=25°C) Electrical Characteristics Symbol Parameter Test Condition VDD Min. ... | Original |
11 pages, |
transistor c 4236 sound record ic lm386 microphone LM386 HT8654 transistor application LM386 PIN DIAGRAM function of ic LM386 HT8654 abstract |
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| Abstract: Â41.56 Â70.65 Â23.85 Â14.31 Â0.95 11.57 23.13 35.33 42.36 54.18 63.59 70.605 67.41 67.41 , external power AMP 16 IOUT O - Current type audio output for an external transistor 17 , . Â0.3V to 6V Storage Temperature. Â50°C to 125°C Input Voltage. VSSÂ0.3V to VDD+0.3V Operating Temperature. Â20°C to 70°C *Note: These are , reliability. 4 5th May '98 HT8654 HT8654 (Ta=25°C) Electrical Characteristics Symbol Parameter ... | Original |
11 pages, |
talk back circuit HT8654 HT8654 abstract |
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| Abstract: 4.100 4.161 R3130N42EA/C 4.137 4.200 4.263 R3130N43EA/C 4.236 4.300 4.364 , 4.100 4.161 R3131N42EA/C 4.137 4.200 4.263 R3131N43EA/C 4.236 4.300 4.364 , Low Voltage Detector with built-in Delay Circuit R3130N R3130NÃ-Ã-Ã-A/C, R3131N R3131NÃ-Ã-Ã-A/C APPLICATION MANUAL NO. EA-073-0012 EA-073-0012 Low Voltage Detector with built-in Delay Circuit R3130N R3130NÃ-Ã-Ã-A/C, R3131N R3131NÃ-Ã-Ã-A/C , , a comparator, resistors for setting voltage detector threshold, an output driver transistor, and an ... | Original |
32 pages, |
ultra low voltage detector R3131N R3130N EA-073-0012 R3130N abstract |
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| Abstract: transistor N AMER PHILIPS/DISCRETE BFS540 BFS540 b^E » FEATURES PINNING PIN CONFIGURATION SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier , - - 15 V lc DC collector current - - 120 mA P.o. total power dissipation up to Ts = 55 °C (note 1 ) - - 500 mW hFE DC current gain lc = 40 mA; VCE = 8 V; T, = 25 °C 60 120 250 h transition frequency lc = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C - 9 - GHz gUM maximum unilateral power gain lc = ... | OCR Scan |
21 pages, |
UBC870 BFS540 BFR540 2t6 551 227 1112 7812 philips iw 1688 BFS540 abstract |
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| Abstract: transistor BFS540 BFS540 FEATURES PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N4 • High , SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF , 120 mA F toi total power dissipation up toTa= 55 °C (note 1) - - 500 mW hFE DC current gain lc = 40 mA; VC6 = 8 V; Ts = 25 °C 60 120 250 fr transition frequency lc = 40 mA; VCE = 8 V; f = 1 GHz; Tamh = 25 °C - 9 - GHz GUM maximum unilateral power gain lc = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 ... | OCR Scan |
21 pages, |
150-1 transistor BF 502 T312 T310 3402 transistor BFR540 BFS540 BTS 308 k a 431 transistor MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor TT 3043 equivalent transistor TT 3043 BFS540 abstract |
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| Abstract: transistor BFS540 BFS540 FEATURES • High power gain • Low noise figure • High transition frequency • Gold , emitter 3 collector DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF , ^tol total power dissipation up to Ta = 55 °C (note 1 ) - - 500 mW hFE DC current gain lc = 40 mA; VC6 = 8 V; T, = 25 °C 60 120 250 ft transition frequency lc = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C - 9 - GHz Gum maximum unilateral power gain lc = 40 mA; VCE = 8 V; f = 900 MHz; ^ = 25=0 - 14 - ... | OCR Scan |
21 pages, |
transistor c 4236 BFS540 BFR540 025-1 transistor BF 697 BFS540 abstract |
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| Abstract: 4.100 4.161 R3130N42EA/C 4.137 4.200 4.263 R3130N43EA/C 4.236 4.300 4.364 , R3131N43EA/C 4.236 4.300 4.364 R3131N44EA/C 4.334 4.400 4.466 R3131N45EA/C 4.433 , comparator, resistors for setting voltage detector threshold, an output driver transistor, and an output , . 1.0V to 6.0V (Topt=25°C) Detector Threshold , . ±10.0% Low Temperature-Drift Coefficient of Detector Threshold . Typ. ±100ppm/°C Two Output ... | Original |
29 pages, |
transistor c 4236 transistor BC 2500 r3131n30ea R3131N R3130N48EA R3130N POWER TRANSISTOR BC 4060 R3130N/R3131N EA-073-0311 R3130N/R3131N abstract |
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| Abstract: voltage ( V,Typ. ) Detection voltage VS ( V ) Ta=25°C Min. Typ. Max. Package 6.0V , 4.236 4.300 4.365 SSOP5 (SMP5C2) / VSOF5 (EMP5) 4.2V BD4842G/FVE BD4842G/FVE BD4942G/FVE BD4942G/FVE 4.137 , Vref Vref GND GND Fig.3 Fig.4 Absolute maximum rating (Ta=25°C) To prevent the , mW mW °C °C *1 Derating : 1.5mW/°C for operation above Ta=25°C *2 Derating : 1.0mW/°C for operation above Ta=25°C *3 When only IC is used. · Power supply voltage This voltage is the applied ... | Original |
15 pages, |
transistor c 4236 DK 13005 transistor BD48XXG/FVE BD49XXG/FVE BD48XXG/FVE abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 2N4236 (#23738) PNP Transistor Division PPC Inc Power 6 W Collector Current I C Collector Emitter Saturation Voltage (I B =0.125 mA, I C =0.25 mA, T A =25 ºC DC Current Gain (I C =0.25 mA, T A =25 ºC,300us pulse www.datasheetarchive.com/files/microsemi/products/23738-v1.htm |
Microsemi | 08/12/1999 | 8.33 Kb | HTM | 23738-v1.htm |
| Search Criteria: PartType = PNP Transistor, Power = 6 Watt PartNo Data Sheet Pack Power (W) I C (A) B V(CBO) (V) V CEO (V) BV EBO (V) 2N3719 2N3719 2N3719 2N3719 TO-5 STD 6 3 40 40 4 2N3720 2N3720 2N3720 2N3720 TO-5 STD 6 3 60 60 4 2N3867 2N3867 2N3867 2N3867 TO-5 STD 6 3 45 40 4 2N3867 2N3867 2N3867 2N3867 TO-5 STD 6 3 60 60 7 2N4236 TO-5 STD 6 3 80 80 www.datasheetarchive.com/files/microsemi/products/pnp/27_6-v1.htm |
Microsemi | 07/12/1999 | 26.5 Kb | HTM | 27_6-v1.htm |
| Search Criteria: PartType = PNP Transistor, I C = 3 Amp PartNo Data Sheet Pack Power (W) I C (A) B V(CBO) (V) V CEO (V) BV EBO (V) 2N3021 2N3021 2N3021 2N3021 TO-3 STD 25 3 30 30 4 2N3022 2N3022 2N3022 2N3022 TO-3 STD TO-5 STD 6 3 60 60 7 2N4236 TO-5 STD 6 3 80 80 TO-220 STD 40 3 80 80 5 TIP32C TO-220 STD 40 3 www.datasheetarchive.com/files/microsemi/products/pnp/59_3-v1.htm |
Microsemi | 07/12/1999 | 47.01 Kb | HTM | 59_3-v1.htm |
| ! Infineon Technologies Discrete & RF Semiconductors ! BFR183T BFR183T BFR183T BFR183T ! Si NPN RF Bipolar Junction Transistor in SC75 ! VCE = 10 V IC = 5 mA ! Common Emitter S .4677 -147.9 4.607 89.7 0.0829 48.0 0.4496 -36.6 1.100 0.4649 -155.0 4.236 86.1 0.0865 48 .6 0.4177 -88.9 5.500 0.5415 110.9 1.035 12.9 0.3360 51.9 0.4236 -95.3 6.000 0.5527 102.4 0.959 8.1 0.3774 48.4 0.4234 -101.2 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/77155930-777340ZC/bfr183t.zip (T510V5M0.S2P) |
Spice Models | 29/07/2012 | 273 Kb | ZIP | bfr183t.zip |
| Search Criteria: PartType = PNP Transistor, VCE(sat) @ IB = 0.125 mAmps Part No Type Package Power (Watts) IC (Amps) BVCBO (Volts) Vceo (Volts) Vebo (Volts) 2N4236 PPC PNP TO-5 STD 6 3 80 80 7 2N3740 2N3740 2N3740 2N3740 PPC PNP TO-66 STD 25 4 60 60 7 JAN 2N3740 2N3740 2N3740 2N3740 PPC PNP TO 1 60 60 5 TIP30B TIP30B TIP30B TIP30B PPC PNP TO-220 STD 30 1 80 80 5 TIP30C PPC PNP TO-220 STD 30 1 100 100 5 2N6420 2N6420 2N6420 2N6420 PPC www.datasheetarchive.com/files/microsemi/products/pnp/207_0.125.htm |
Microsemi | 04/01/1999 | 20.8 Kb | HTM | 207_0.125.htm |
| Voltage of 25μV (25°C) Maximum Offset Drift of 0.7μV/°C Maximum Input Bias: 1pA (25°C) 50pA (≤85°C) Micropower: 54μA per Amp 95dB CMRR (Min) 100dB PSRR (Min) Input Noise voltages of 3V and 5V from -40 to 125°C. The dual amplifier LTC6078 LTC6078 LTC6078 LTC6078 is available in 8-lead MSOP and 10-lead MSOP 8 C $3.21 $2.25 View LTC6078ACMS8 LTC6078ACMS8 LTC6078ACMS8 LTC6078ACMS8#PBF MSOP 8 C $3.21 $2.25 View www.datasheetarchive.com/files/linear/product/2797.html |
Linear | 17/09/2010 | 27.41 Kb | HTML | 2797.html |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1.5 V IC = 14 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .3 0.4604 -26.5 0.300 0.4253 -156.6 6.819 92.5 0.0469 60.9 0.4398 -25.5 0.400 0.4236 .6103 104.1 0.802 9.0 0.3804 51.3 0.3718 -105.2 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB1V514M.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2 V IC = 20 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .4 0.4236 -25.6 0.900 0.4490 162.8 2.421 61.9 0.1066 70.2 0.4216 -27.7 1.000 0 .6193 103.4 0.793 9.0 0.3748 54.4 0.4004 -99.0 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB2V020M.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF770A BF770A BF770A BF770A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 6 V IC = 4 mA ! Common Emitter S-Parameters: October 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .4235 166.9 2.095 60.6 0.1369 55.9 0.4328 -42.7 1.400 0.4236 162.4 1.954 57.3 0.1451 56 .5320 111.9 1.043 18.0 0.3233 52.5 0.3948 -90.4 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/26775098-777289ZC/bf770a.zip (G26V04M0.S2P) |
Spice Models | 29/07/2012 | 238.93 Kb | ZIP | bf770a.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF770A BF770A BF770A BF770A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 5 mA ! Common Emitter S-Parameters: October 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .4 0.4064 -48.4 1.800 0.4206 146.3 1.707 46.4 0.1828 59.3 0.4050 -50.7 1.900 0.4236 .5034 112.4 1.130 19.0 0.3184 52.7 0.3828 -84.7 ! ! (c) 1999 Infineon Technologies AG, Munich www.datasheetarchive.com/download/26775098-777289ZC/bf770a.zip (G28V05M0.S2P) |
Spice Models | 29/07/2012 | 238.93 Kb | ZIP | bf770a.zip |