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CSD19532KTTT Texas Instruments 100V, N-ch NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175 visit Texas Instruments
CSD19532KTT Texas Instruments 100V, N-ch NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175 visit Texas Instruments Buy
TPS76901HDBVT Texas Instruments High Temperature Ultra Low-Power 100-mA Low-Dropout Line Regulators 5-SOT-23 -55 to 175 visit Texas Instruments Buy
CSD19536KCS Texas Instruments 100V, N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175 visit Texas Instruments Buy
CSD18542KCS Texas Instruments CSD18542KCS 60-V N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175 visit Texas Instruments Buy
CSD19505KTTT Texas Instruments 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 -55 to 175 visit Texas Instruments

transistor bf 175

Catalog Datasheet MFG & Type PDF Document Tags

BF115

Abstract: BF 145 transistor NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF 115 The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillator-mixer stages of FM tuners and generally for all H F uses. Le transistor NPN "plan epitaxial" BF 115 est destiné à , M 25 55 85 115 145 175 T kCO Weight : 0,7 g. Masse B Connection M is connected to case La , 175 °C Storage temperature Température de stockage Min. Max. Tstg - 55 + 175 °C °C â SCS 76-16
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BF200 transistor

Abstract: BF200 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 200 Preferred device Dispositif recommandé The NPN planar transistor 6F 200 is intended for use in VHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF200 est destiné è être utilisé comme , Ti 175 °C Storage temperature Tempéreture de stockage min. max. Tstg -65 + 175 °C â'¢C BF 200 , 546 BF 200 DYNAMIC CHARACTERISTICS (for small signals) j = 25°C (Unless otherwise stated
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BF200 transistor transistor 468 Transistor B C 468 transistor bf 175 BF-200 transistor BF200

BF 182 transistor

Abstract: TRANSISTOR Bf 522 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF182 The NPN planar epitaxial transistor BF 182 is intended for use in VHF converter stages of television receivers and generally for'all UHF-VHF uses. Le transistor NPN planar épitaxiai BF 182 est destiné à , puissance J" - 25°C Ptot 150 375 mW Junction temperature x Température da ¡onction Tj 175 °c Storage temperature min Température de stockage max Tstg -65 + 175 °c °C BF 182 STATIC CHARACTERISTICS t . _ 050
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BF 182 transistor TRANSISTOR Bf 522 bf 182 CI 182 transistor A11A Y11E

BF 183 transistor

Abstract: BF183 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF 183 The NPN planar epitaxial BF 183 intended for use in VHF oscillator stages of television receivers and generally for all VHF-UHF uses. Le transistor NPN planar épitaxial BF 183 est destiné à être utilisà , Tamb = 25°C Tcase = 25°C Ptot 150 375 mW Junction temperature Température de ¡onction max Tj 175 °C Storage temperature Température de stockage min max T"g -65 + 175 °C °C 75-43 1/6 527 BF
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BF 183 transistor BF183 BF 528 Y21b Oscillator CQE y12b

BF115

Abstract: TLO 721 : BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in Fig , 000515b 1 ALGG n j / - y r i B F115 Silicon NPN Epitaxial Planar RF Transistor Applications , current V'c8 = 2 0 V ,r.mb= 175 °C Collector-base breakdown voltage l, - 1 0 | iA Collector-emitter , 0.01, /p -0.3 ms T1.2/518.0484 El Vb e »ta 145 175 - 5 5 . .+ 175 Min. Typ. CBO 0.5 50 30 , A L C G BF 115 7 S Ì/- /S " i i 4 3452 b -0 3 TELEFUNKEN ELECTRONIC 7
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BF115 TLO 721 BF 145 transistor transistor bc 7-40 569-GS

BF180

Abstract: s21b NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR * BF180 Preferred device Dispositif recommandé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF 180 est destiné é être utilisé comme , puissance ""case= 25 0 C Ptot 200 375 mW Junction temperature Température de jonction Ti 175 °C Storage temperature min. Température de stockage max. Tstg -55 + 175 °C â'¢C BF 180 STATIC CHARACTERISTICS T h
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s21b BF180 TRANSISTOR s parametres s22b bf 180 MAX S21B

BF173 Transistor

Abstract: BF173 BF 173 SILICON PLANAR NPN VIDEO IF AMPLIFIER The BF173 is a silicon planar epitaxial NPN transistor in a Jedec TO-72 metal case with a very low feedback capacitance. This transistor is intended for , = 0) 4 V 'c Collector current 25 mA P.O. Total power dissipation at Tamb^25°C 175 mW at T â'" 25 °C case 230 mW Ts.g Storage temperature -55 to 175 °C Ti Junction temperature 175 °C 129 5/73 BF 173 THERMAL DATA Rth j-amb Thermal resistance junction-ambient max 850 °C/W ELECTRICAL
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BF173 Transistor 0A90 bf 173 transistor transistor bf 185 J BF173 BF 173

1412D

Abstract: UDN2983A equivalent TD62318 TD62064 TD62308 TD62164 TD62318 BP,BP-1 BF 80 V VCEF Parasitic Transistor , Tr.Array TD62500 to 599 D-MOS Transistor TD62000 to 199 TD62300 to 499 Bipolar Transistor , Output Output Channel 1. TRANSISTOR ARRAY IC 1. TRANSISTOR ARRAY IC 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT COMMON INPUT OUTPUT GND EXAMPLE , RESISTOR) OPERATE DIRECTLY WITH 6V-15V CMOS Cross Reference of Standard Transistor Array Cross
Toshiba
Original
IEEE1482 1412D UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent ULN2000 TD62M RS232C RS422 TD62600

silicon npn planar rf transistor sot 143

Abstract: transistor AC 237 Technologies BFS62 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range , . 40 25 4 25 2 200 260 175 -65.+ 175 Typ. V V V mA mA mW mW °C °C Max. 650 K/W 500 K/W , Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape Additional marking" 0": taping without paper film Additional
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silicon npn planar rf transistor sot 143 transistor AC 237 transistor bc 238 b MARKING Pa TRANSISTOR transistor bc 250c BFS 65 DDD53 HAL66 500WW D0G5315 IAL66

BF173

Abstract: transistor bf 175 BF 173 SILICON PLANAR NPN VIDEO IF AMPLIFIER The E1F173 is a silicon planar epitaxial NPN transistor ¡in a Jedec TO-72 metal case with a very low feedback capacitance. This transistor is intended , = 0) 4 V 'c Collector current 25 rriA P.O. Total power dissipation at Tamb ^ 25 °C 175 mW at T ~ 25 °C case 230 mW Storage temperature -55 to 175 °C Ti Junction temperature 175 °C MECHANICAL DATA Dimensions in mm (sim. to TO-72) 5/73 76 BF 173 THERMAL DATA Rth j-amb Thermal resistance
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BF167

Abstract: ST CB4 transistor BF 167 is intended for use in IF video amplifiers (AGC controlled stage) of television receivers. Le transistor NPN planar BF 167 est destiné aux amplificateurs FI vidéo (à gain contrôlé) des rà , temperature Température de jonction max. Ti 175 °C Storage temperature Température de stockage min, max. Tstg -65 + 175 °C °C BF 167 STATIC CHARACTERISTICS T =25°C (Unless otherwise stated , mA f = 36,6 MHz AGp 60 dB 2/7 482 BF 167 DYNAMIC CHARACTERISTICS T ,_=25°C (Unless otherwise
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BF167 ST CB4 transistor f 482 bf 167 J BF167 AF1V 45---------T

s22b

Abstract: bf181 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF181 The NPN plan transi tor BF 181 is intended for use in UHF converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné i être utilisé comme convertisseur et oscillateur dans les étages , 150 375 mW Junction temperature Température de jonction max Ti 175 °C Storage temperature Température de stockage min max Tstg -55 + 175 °c -c BF 181 STATIC CHARACTERISTICS T h - 25« C
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b 514 transistor bf 181 bf181 transistor ic s21b J BF181

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres -40 40- 120 -150 -1,5 500/50 200 175* 229 *2N 2904 A TO-39 600 -60 40- 120 -150 -1,5 500/50 200 175 , -1.5 500/50 200 200* 229 *2N 2906 TO-18 400 -40 40-120 -150 -1,6 500/50 200 175* 235 *2N 2906 A TO-18 400 -60 40- 120 -150 -1.6 500/50 200 175* 235 *2N 2907 TO-18 400 -40 100-300 -150 -1,6 500/50 200 200 , ) IVCER* *2iE y ic (mA) VCEsat / (V) / IC/lB (mA) n (MHz) See page Voir page min max min BF 179 C TO-39 0,6 250* 20 20 120 8 497 BF 257 TO-39 5 (1) 160 25 30 i 30/6 110 § 565 BF 258 TO-39 5
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catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

BF173

Abstract: BF173 Transistor The NPN planar epitaxial transistor BF 173 intended for use in LF video amplifiers (uncontrolled stages) of television receivers. Le transistor NPN "planar épitaxial" BF 173 est destiné aux étages , mW Junction temperature Température de jonction Ti 175 °C Storage temperature Température de stockage T«g -65 + 175 °C °C 78-43 1/7 489 BF 173 STATIC CHARACTERISTICS T = 25»C (Unless otherwise , Tension base-émetteur vCE= 10 V Iq =7 mA VBE 0,75 0,90 V 2/7 490 BF 173 DYNAMIC CHARACTERISTICS (for
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transistor bf 494 bf 494 transistor transistor BF 489 BF 494 C emetteur video iran

BFY88

Abstract: Telefunken u 237 T- 3/-/S~~ BFY 88 IALGG Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier , JEDEC TO 72 Weight max. 0.5 g 'ESO 40 25 3.5 25 V V V mA '»is "thJA Min. 175 175 -65.+175 , -92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on , tape in special box. Marking for orientation of transistor not necessary, because box can be opened on
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BFY88 Telefunken u 237 transistor marking code 2C BFY 88 IMB 06 C BFy 90 transistor D0DS332 00D5333 100MH

BQ 15 Transistor

Abstract: Electronic car ignition circuit standard taped: BF 5 69 R-G S 08. In case of standard taping, the transistor orienta tion on the tape is , transistors as reverse ta ping; BF 569 R-GS 07. In case of reverse taping, the transistor orientation on , c n b ooo^bos s AL66 . S 601 T T -3 3 -a ? Silicon NPN Darlington Power Transistor , current Total power dissipation Tm , SS100°C VCE0 *c ^BM 400 15 4 62.5 100 175 - 6 5 . . . + 175 V , of transistor on tape1 1 Additional marking for specials5 1 *i 0 6 * View on flat side of transistor
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BQ 15 Transistor Electronic car ignition circuit transistor bf 222 marking 601 sot

bf185

Abstract: telefunken ra 200 amplifier transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the , ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape Is shown , Technologies 7= 3/-/S- B F 185 Silicon NPN Epitaxial Planar RF Transistor Applications: General and , 30 V V V 20 5 30 1 mA mA mW °C °c 145 175 - 5 5 . . . + 175 ^ B tfl Min. Typ , transistor on tape1 1 Additional marking for specialsa) ') 06 * View on flat side of transistor, view on
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bf185 telefunken ra 200 amplifier transistor marking c y 000S173

BF167

Abstract: transistor BF 37 OOOSlbO i ALGG B F 167 Silicon NPN Planar RF Transistor Applications! Controlled video IF , 4 25 3 130 175 -6 5 .+ 1 7 5 Min. Typ. Max. 1000 V V V mA mA mW °C °C rl r.9 K/W T1 , 3454 B-05 TELEFUNKEN ELECTRONIC Ö1C T > ö'teOCHb DDGSlb2 7 * A L 6 6 BF 167 I , fi^EOD^b OQDSlbB ^ AL6G BF 167 8 3456 B-07 TELEFUNKEN ELECTRONIC 7. Taping and Reeling ^ , forTO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specialsa ) ') 06
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transistor BF 37 B--04

Transistor BFT 96

Abstract: bft96 q0q532q t BFT 96 Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially , £/576.0484E1 3613 Fâ'"10 175 telefunken electronic BFT 96 fllc » â  fl^edq^b dqqs321 1 balgg Thermal , Order-No. of Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape Additional marking" 0": taping without paper film
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Transistor BFT 96 bft96 transistor 3884 transistor BC 176 transistor fet 3884

BF173

Abstract: BF173 Transistor taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in , ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape Is shown , fiRSDGTb OOGSlbM 0 IAL6G BF173 Silicon NPN Epitaxial Planar RF Transistor Applications , DC characteristics ^CBO ^CEO ^EBO ^c 40 25 4 25 2 200 175 -6 5 .+ 1 7 5 Min. Typ. Max. 650 , filC D fi^SDCnb 00051b? b AL 66 7 ^ 3 / - / S - ! BF 173 ' 22 I S I · / / / / / i r
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