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transistor bf 175

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF 115 The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillator-mixer stages of FM tuners and generally for all H F uses. Le transistor NPN "plan epitaxial" BF 115 est destiné à , M 25 55 85 115 145 175 T kCO Weight : 0,7 g. Masse B Connection M is connected to case La , 175 °C Storage temperature Température de stockage Min. Max. Tstg - 55 + 175 °C °C ■SCS 76-16 ... OCR Scan
datasheet

8 pages,
146.58 Kb

V12EC transistor CD 910 oscillateur C22E thomson tuners transistor 115 transistor bf 175 transistor bf 910 BF 145 transistor TEXT
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Abstract: NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 200 Preferred device Dispositif recommandé The NPN planar transistor 6F 200 is intended for use in VHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF200 BF200 est destiné è être utilisé comme , Ti 175 °C Storage temperature Tempéreture de stockage min. max. Tstg -65 + 175 °C •C BF 200 , 546 BF 200 DYNAMIC CHARACTERISTICS (for small signals) j = 25°C (Unless otherwise stated ... OCR Scan
datasheet

6 pages,
108.43 Kb

transistor BF200 BF-200 transistor bf 175 Transistor B C 468 transistor 468 BF200 BF200 transistor TEXT
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Abstract: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF182 BF182 The NPN planar epitaxial transistor BF 182 is intended for use in VHF converter stages of television receivers and generally for'all UHF-VHF uses. Le transistor NPN planar épitaxiai BF 182 est destiné à , puissance J" - 25°C Ptot 150 375 mW Junction temperature x Température da ¡onction Tj 175 °c Storage temperature min Température de stockage max Tstg -65 + 175 °c °C BF 182 STATIC CHARACTERISTICS t . _ 050 ... OCR Scan
datasheet

6 pages,
136 Kb

Y11E transistor A11A CI 182 bf 182 BF182 TRANSISTOR Bf 522 BF 182 transistor TEXT
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Abstract: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL BF 183 The NPN planar epitaxial BF 183 intended for use in VHF oscillator stages of television receivers and generally for all VHF-UHF uses. Le transistor NPN planar épitaxial BF 183 est destiné à être utilisà , Tamb = 25°C Tcase = 25°C Ptot 150 375 mW Junction temperature Température de ¡onction max Tj 175 °C Storage temperature Température de stockage min max T"g -65 + 175 °C °C 75-43 1/6 527 BF ... OCR Scan
datasheet

6 pages,
124.1 Kb

Y22b transistor BF 450 transistor BF 375 pour y12b Oscillator CQE Y21b transistor bf 175 BF 528 BF183 BF 183 transistor TEXT
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Abstract: : BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in Fig , 000515b 1 ALGG n j / - y r i B F115 Silicon NPN Epitaxial Planar RF Transistor Applications , current V'c8 = 2 0 V ,r.mb= 175 °C Collector-base breakdown voltage l, - 1 0 | iA Collector-emitter , 0.01, /p -0.3 ms T1.2/518.0484 El Vb e »ta 145 175 - 5 5 . .+ 175 Min. Typ. CBO 0.5 50 30 , A L C G BF 115 7 S Ì/- /S " i i 4 3452 b -0 3 TELEFUNKEN ELECTRONIC 7 ... OCR Scan
datasheet

6 pages,
326.65 Kb

transistor bc 7-40 BF 145 transistor TLO 721 BF115 TEXT
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Abstract: NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR * BF180 BF180 Preferred device Dispositif recommandé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF 180 est destiné é être utilisé comme , puissance ""case= 25 0 C Ptot 200 375 mW Junction temperature Température de jonction Ti 175 °C Storage temperature min. Température de stockage max. Tstg -55 + 175 °C •C BF 180 STATIC CHARACTERISTICS T h ... OCR Scan
datasheet

9 pages,
162.98 Kb

transistor bf 180 CE 470 10V est 504 J BF180 MAX S21B bf 180 s parametres s22b BF180 TRANSISTOR s21b BF180 TEXT
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Abstract: BF 173 SILICON PLANAR NPN VIDEO IF AMPLIFIER The BF173 BF173 is a silicon planar epitaxial NPN transistor in a Jedec TO-72 metal case with a very low feedback capacitance. This transistor is intended for , = 0) 4 V 'c Collector current 25 mA P.O. Total power dissipation at Tamb^25°C 175 mW at T — 25 °C case 230 mW Ts.g Storage temperature -55 to 175 °C Ti Junction temperature 175 °C 129 5/73 BF 173 THERMAL DATA Rth j-amb Thermal resistance junction-ambient max 850 °C/W ELECTRICAL ... OCR Scan
datasheet

5 pages,
117.87 Kb

J BF173 BF 173 transistor bf 185 bf 173 transistor 0A90 BF173 BF173 Transistor TEXT
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Abstract: TD62318 TD62318 TD62064 TD62064 TD62308 TD62308 TD62164 TD62164 TD62318 TD62318 BP,BP-1 BF 80 V VCEF Parasitic Transistor , Tr.Array TD62500 TD62500 to 599 D-MOS Transistor TD62000 TD62000 to 199 TD62300 TD62300 to 499 Bipolar Transistor , Output Output Channel 1. TRANSISTOR ARRAY IC 1. TRANSISTOR ARRAY IC 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT COMMON INPUT OUTPUT GND EXAMPLE , RESISTOR) OPERATE DIRECTLY WITH 6V-15V CMOS Cross Reference of Standard Transistor Array Cross ... Toshiba
Original
datasheet

37 pages,
1095.99 Kb

LT 6238 IEEE1482 8ch DARLINGTON TRANSISTOR ARRAY TRANSISTOR ARRAY,cross reference ULN2003D TD62xx ULN2032A M54585FP ULN2813A ULN2803 dot matrix driver td62304ap relay driver ic ULN2804 ULN2804A application ULN2000 TLP251 equivalent ULN2000 M54563P equivalent ULN2000 DARLINGTON SINK DRIVER ULN2000 M54522P equivalent ULN2000 1411d ULN2000 UDN2983A equivalent ULN2000 1412D ULN2000 ULN2000 ULN2000 TEXT
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Abstract: Technologies BFS62 BFS62 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range , . 40 25 4 25 2 200 260 175 -65.+ 175 Typ. V V V mA mA mW mW °C °C Max. 650 K/W 500 K/W , Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape Additional marking" 0": taping without paper film Additional ... OCR Scan
datasheet

4 pages,
195.8 Kb

transistor case To 71 BFS 65 BFS62 c10 g sot-23 F-05 MARKING Pa TRANSISTOR sot-23 MARKING CODE GS 5 sot-23 TRANSISTOR MARKING 76 Telefunken u 237 to92 MARKING CODE a12 transistor bc 238 b transistor bc 250c transistor AC 237 HAL66 BFS62 HAL66 HAL66 BFS62 TEXT
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Abstract: BF 173 SILICON PLANAR NPN VIDEO IF AMPLIFIER The E1F173 E1F173 is a silicon planar epitaxial NPN transistor ¡in a Jedec TO-72 metal case with a very low feedback capacitance. This transistor is intended , = 0) 4 V 'c Collector current 25 rriA P.O. Total power dissipation at Tamb ^ 25 °C 175 mW at T ~ 25 °C case 230 mW Storage temperature -55 to 175 °C Ti Junction temperature 175 °C MECHANICAL DATA Dimensions in mm (sim. to TO-72) 5/73 76 BF 173 THERMAL DATA Rth j-amb Thermal resistance ... OCR Scan
datasheet

4 pages,
206.75 Kb

BF 173 E1F173 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
TF=794P TR=195N) * 175 Volt 1 Amp 200 MHz SiPNP Transistor 05-23-1991 * *SRC=MPS6651 MPS6651 * * *SRC=BCY70 BCY70;BCY70 BCY70;BJTs PNP;Gen. Purpose;40V 200mA .MODEL BCY70 BCY70 PNP (IS=2.03E-14 03E-14 NF=1.0 BF=321 VAF=114 + CJE=9.8E-12 8E-12 CJC=9.3E-12 3E-12 TF=3.2E-10 2E-10 TR=1.5E-07 5E-07) * 40 Volt 0.20 Amp 500 MHz SiPNP Transistor 06-27-1990 NF=1.0 BF=321 VAF=121 + IKF=7.0E-02 0E-02 ISE=4.45E-13 45E-13 NE=2.0 BR=4 NR=1.0 VAR=20 + XTB=1.5 RE=6.8E-01 8E-01 Transistor 06-27-1990 * Philips * *SRC=BCY72 BCY72;BCY72 BCY72;BJTs PNP;Gen. Purpose;25V 200mA .MODEL
/datasheets/files/spicemodels/misc/modelos/spice_complete/bjtp.lib
Spice Models 18/04/2010 90.81 Kb LIB bjtp.lib
* * *SRC=BCY59X BCY59X;BCY59X BCY59X;BJTs NPN;Amplifier;32V 200mA .MODEL BCY59X BCY59X NPN (IS=19.9F NF=1 BF=551 VAF=120 IKF=.35 CJC=9.59P VJC=.3 MJC=.5 TF=530P TR=170N) * Motorola 45 Volt .2 Amp 300 MHz SiNPN Transistor (IS=162F NF=1 BF=520 VAF=90 IKF=.3 ISE=17.4P NE=2 + BR=4 NR=1 VAR=20 IKR=.45 RE=.363 RB=.852 RC=65.2M 350 MHz SiNPN Transistor 09-09-1991 *PINOUT TO-92 3 2 1 * *SRC=BC109C BC109C;BC109C BC109C;BJTs NPN;Gen. Purpose;25V 200mA .MODEL BC109C BC109C NPN (IS=1.02E-14 02E-14 NF=1.0 BF=845 VAF=80 + IKF=6.0E-02 0E-02
/datasheets/files/spicemodels/misc/modelos/spice_complete/bjtn.lib
Spice Models 18/04/2010 92.14 Kb LIB bjtn.lib
;Amplifier;100V 2A .MODEL MPSU07 MPSU07 NPN (IS=203F NF=1 BF=175 VAF=180 IKF=.25 ISE=52.8P NE=2 + BR=4 NR=1 VAR=16 *SYM=POWBJTN .SUBCKT QN3583 QN3583 1 2 3 * TERMINALS: C B E * 175 Volt 1 Amp SiNPN Power Transistor QPWR .33 RBS 2 4 18 .MODEL QPWR NPN (IS=5.16E-13 16E-13 NF=1.0 BF=260 VAF=180 + IKF=2.3E+00 2 4 18 .MODEL QPWR NPN (IS=5.16E-13 16E-13 NF=1.0 BF=260 VAF=180 + IKF=2.3E+00 ISE=1.73E-10 73E-10 NE=2.0 7.7 .MODEL QPWR NPN (IS=147F NF=1 BF=39 VAF=284 IKF=1.5 + ISE=495P NE=2 BR=4 NR=1 VAR=20 IKR=2.25
/datasheets/files/spicemodels/misc/modelos/spice_complete/powbjt.lib
Spice Models 18/04/2010 134.66 Kb LIB powbjt.lib
Vaf=100 Bf=54.93 Ne=2.064 + Ise=347f Ikf=.1459 Xtb=1.5 Br=.8643 Nc=2 Isc=0 Ikr=0 Rc=1.75 + Cjc=4.524p Vaf=100 Bf=81.33 Ne=2.035 + Ise=199.5f Ikf=.1441 Xtb=1.5 Br=.8006 Nc=2 Isc=0 Ikr=0 Rc=1.75 + * Library of bipolar transistor model parameters * * Copyright *- *$ .model Q2N696 Q2N696 NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=65.62 Ne=1.208 + Ise=19.48f creation *$ .model Q2N697 Q2N697 NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=118.6 Ne=1.236 + Ise=14.34f
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/bipolar.lib
Spice Models 29/07/2012 403.86 Kb LIB bipolar.lib
Vaf=100 Bf=54.93 Ne=2.064 + Ise=347f Ikf=.1459 Xtb=1.5 Br=.8643 Nc=2 Isc=0 Ikr=0 Rc=1.75 + Cjc=4.524p Vaf=100 Bf=81.33 Ne=2.035 + Ise=199.5f Ikf=.1441 Xtb=1.5 Br=.8006 Nc=2 Isc=0 Ikr=0 Rc=1.75 + * Library of bipolar transistor model parameters * * Copyright *- *$ .model Q2N696 Q2N696 NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=65.62 Ne=1.208 + Ise=19.48f creation *$ .model Q2N697 Q2N697 NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=118.6 Ne=1.236 + Ise=14.34f
/datasheets/files/spicemodels/misc/schematics_layouts/bipolar.lib
Spice Models 17/06/1998 403.96 Kb LIB bipolar.lib
Xti=3 Eg=1.11 Vaf=100 Bf=43.23 Ise=1.355n + Ne=1.413 Ikf=8.245 Nk=.8069 Xtb=1.75 Br=2.131 * Library of European Power Bipolar Transistor Models NPN(Is=3.108p Xti=3 Eg=1.11 Vaf=100 Bf=142.3 Ise=6.491p + Ne=1.454 Ikf=11.52 Nk=.7978 Eg=1.11 Vaf=100 Bf=142.3 Ise=6.491p + Ne=1.454 Ikf=11.52 Nk=.7978 Xtb=1.5 Br=1.376 pid=bdx35 case=TO126 * 91-08-12 dsq *$ .model BDX37 BDX37 NPN(Is=3.108p Xti=3 Eg=1.11 Vaf=100 Bf
/datasheets/files/spicemodels/misc/epwrbjt.lib
Spice Models 19/12/2001 14.39 Kb LIB epwrbjt.lib
Xti=3 Eg=1.11 Vaf=100 Bf=43.23 Ise=1.355n + Ne=1.413 Ikf=8.245 Nk=.8069 Xtb=1.75 Br=2.131 * Library of European Power Bipolar Transistor Models NPN(Is=3.108p Xti=3 Eg=1.11 Vaf=100 Bf=142.3 Ise=6.491p + Ne=1.454 Ikf=11.52 Nk=.7978 Eg=1.11 Vaf=100 Bf=142.3 Ise=6.491p + Ne=1.454 Ikf=11.52 Nk=.7978 Xtb=1.5 Br=1.376 pid=bdx35 case=TO126 * 91-08-12 dsq *$ .model BDX37 BDX37 NPN(Is=3.108p Xti=3 Eg=1.11 Vaf=100 Bf
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/epwrbjt.lib
Spice Models 29/07/2012 14.37 Kb LIB epwrbjt.lib
QOP2X NPN BF=146 BR=17.5 RB=51.68K RC=1.881K RE=456 + NF=.990 VAF=71.8 IKF=2.289E-2 289E-2 QOP2XE NPN BF=146 BR=17.5 RB=51.68K RC=3.040K RE=456 + NF=.990 VAF=71.8 IKF=2.289E-2 289E-2 * * * LATERAL PNP TRANSISTOR MODEL (FOR TTL PNP INPUTS) * * * 5 um BASE WIDTH / DOUBLE EMITTER .MODEL QPNP PNP BF=35.0 BR=2.45 RB=78.0 RC=55 RE=4.2 + * * F151 3UM SPACED PNP SINGLE EMITTER BIPOLAR TRANSISTOR * * IMPACT PROCESS MANUFACTURED IN
/datasheets/files/texas-instruments/data/models/spice/bct/8245.in
Texas Instruments 03/11/1997 21.54 Kb IN 8245.in
BF=150 VAF=100 IKF=.175 ISE=5E-11 5E-11 NE=2.5 + BR=7.5 VAR=6.38 IKR=.012 ISC=1.9E-13 9E-13 NC=1.2 RC=.4 Transistor 09-22-1990 * .MODEL QN2904 QN2904 PNP (IS=381F NF=1 BF=51.5 VAF=113 IKF=.14 + ISE=46.1P NE=2 QN2907 QN2907 PNP (IS=1.1E-12 1E-12 BF=200 BR=6 NF=1.21 + RC=.6 IKF=100E-3 100E-3 VAF=50 XTB=1.5 NE=1.9 ISE=1.3E-11 3E-11 ) * .MODEL QN3055 QN3055 NPN(IS=1.5E-8 NF=1.67 BF=75 VAF=100 IKF=4 + BR=4 RC=.06 MJC=.45 VJE=1.2 MJE=.5 CJC=50PF CJE=175PF 175PF XTB=2.5 + IS=1E-15 1E-15 ISE=3E-9 NE=2 BF=100 BR=25 ISC=3E-9 NC=2 ) .MODEL QPSCR PNP(TF=90NS
/datasheets/files/siemens/tools/icap/disk3/demo.lib
Siemens 15/07/1994 9.27 Kb LIB demo.lib
QOP2X NPN BF=146 BR=17.5 RB=51.68K RC=1.881K RE=456 + NF=.990 VAF=71.8 IKF=2.289E-2 289E-2 QOP2XE NPN BF=146 BR=17.5 RB=51.68K RC=3.040K RE=456 + NF=.990 VAF=71.8 IKF=2.289E-2 289E-2 * * * LATERAL PNP TRANSISTOR MODEL (FOR TTL PNP INPUTS) * * * 5 um BASE WIDTH / DOUBLE EMITTER .MODEL QPNP PNP BF=35.0 BR=2.45 RB=78.0 RC=55 RE=4.2 + * * F151 3UM SPACED PNP SINGLE EMITTER BIPOLAR TRANSISTOR * * IMPACT PROCESS MANUFACTURED IN
/datasheets/files/texas-instruments/data/models/spice/bct/8245.out
Texas Instruments 03/11/1997 21.85 Kb OUT 8245.out