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transistor bc

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transistor BC 308

Abstract: transistor sc 308 MPN SILICON TRANSISTOR, EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in
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bc 357 transistor

Abstract: transistor BC 55 ©metteur lc =2 mA vce =5v vbe 0,55 0,65 0,7 V *The transistor BC 237 is grouped in two classes of DC gain A â'" 6 Le transistor BC 237 est subdivisé en deux classes de gain statique A â'" B The transistor BC 238 is grouped in three classes of DC gain A â'" B â'" C Le transistor BC 238 est subdivisé en trois classes de gain statique A â'" B â'" C The transistor BC 239 is grouped in two classes of DC gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain statique B-C 2/10 358 BC 237
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bc 303 transistor

Abstract: BC 109 Transistor thermal resistance ìésistanca thermique fjonct/on-boitier) Rth(j-c) 175 °C/W "The transistor BC 107 is grouped in two classes of DC gain : A â'" B Le transistor BC 107 est subdivisé en deux classes de gain statique : A â'" B '"The transistor BC 108 ¡s grouped in three classes of DC gain : A - B - C Le transistor BC 108 est subdivisé en trois classes de gain statique : Aâ'" B â'" C â'¢"The transisto BC 109 is grouped in two classes of DC gain : B - C Le transistor BC 109 est subdivisé en deux classes de
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transistor BC-108

Abstract: dog 53 4403-4248-033-014 Stabilisatorpl., bestückt 35 OO-2 2 15 -O37 -OI7 71. Transistor C 2 N 2195 A 72. Transistor BC 178 A 73. Diode BZP 6870 V 75 74. Transistor BC 109 B 75. Elko 1600 uF, 12V WT 392/70 76. Kondens. 0 , 201/221; Transistor BC 108 kann bei Beachtung Diode BZ 2/C9V1 entder Stromverstärkung durch den BC 149 , 85. Transistor ADP 671 8332015 8323006 8403102 8343001 7383050 7343051 7303052 7353053 7313054
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transistor t4B

Abstract: service-mitteilungen Kontaktfedern kpl. T4-D-5471-041-1 Transistor BC 109 B Transistor BC 178 Transistor AC 178p/AC 179p , . Diode Thermistor BA 560 entspricht 47 Ohm (R 113) , SY 201/SY 221 TNM 47 Der Transistor BC 109 B kann ohne Schaltungsänderungen durch den BC 149 C oder äquivalente Typen ersetzt werden. Der BC 109 B
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transistor t4B service-mitteilungen TRANSISTOR BC 109 transistor BC 238 Stassfurt servicemitteilungen T4-D-5471-571-1 T4-C-5471-169-1 T4--D-2858-002-1 UF-50 T4-A-5471-820-1 T4-B-5471-177-1

transistor bc 318

Abstract: TRANSISTOR BC 321 PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q , Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. 318 5.91 BC 516 Electrical
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transistor bc 318 TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517

transistor bc 325

Abstract: transistor bf 179 transistor BC 179 is selected in two classes of DC gain : A â'" B Le transistor BC 179 ast livré an deux , , of BC 107, BC 108, BC 109 * BC 177 * BC 178 BC 179 The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F. n-eamplifier and driver stages. The BC 179 is Foroseen for low noise stages. .es transistors PNP "planar épitaxlal" BC 177, BC 178 et SC 179 sont destinés aux usages BF dans les étages "préamplificateur" et "driver". Le BC 179 est prévu oour les étages faible
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transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179

transistor bc 517

Abstract: BC517 BC 517 NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q Complementary type: BC 516 (PNP) q 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 ­ Q62702-C825 C TO-92 B E , Group 1 5.91 BC 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified , 1) Pulse test: t 300 us, D 2 %. Semiconductor Group 2 BC 517 Total power
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transistor bc 517 transistor bc 100 TRANSISTOR BC BC 517 c825

bc516

Abstract: C944 PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , BC 516 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol , %. Semiconductor Group 2 BC 516 Total power dissipation Ptot = f (TA; TC) Collector
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C944 517 bc

transistor BC 368

Abstract: TRANSISTOR BC NPN Silicon AF Transistor BC 368 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary type: BC 369 (PNP) q 2 3 1 Type Marking Ordering Code BC 368 ­ C62702-C747 Pin Configuration 1 2 3 E C Package1) TO-92 B , 25 °C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC , test: t 300 us, D 2 %. Semiconductor Group 2 MHz BC 368 Total power dissipation Ptot
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transistor BC 368 368 marking IC 368 TRANSISTOR bC 369 bc 369 pnp silicon transistor BC368
Abstract: SIEMENS NPN Silicon Darlington Transistor BC 517 â'¢ High current gain â'¢ High collector current â'¢ Complementary type: BC 516 (PNP) Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1 ) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings , 642 flSBSbOS O i a O S E S 1998-11-01 0^3 SIEMENS BC 517 Electrical Characteristics , ' EHP00153 BC 517 â  m uâ  m uâ  i i i i i: ì H i â  i â  i i n nb i i i i : i i â -
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D1SQ52

TRANSISTOR C 369

Abstract: TRANSISTOR bC 369 PNP Silicon AF Transistor BC 369 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary type: BC 368 (NPN) q 2 3 1 Type Marking Ordering Code BC 369 ­ C62702-C748 Pin Configuration 1 2 3 E C Package1) TO-92 B , 25 °C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC , test: t 300 us, D 2 %. Semiconductor Group 2 MHz BC 369 Total power dissipation Ptot
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TRANSISTOR C 369 TRANSISTOR bC 369.remplacent bc369 BC 369 90 156 369
Abstract: orporation im KSE44H SERIES NPN EPITAXIAL SILICON TRANSISTOR BC GMWWT Ã" * in Cosipp)- CAPACE , KSE44H SERIES NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER APPLICATION AND SWITCHING â'¢ Low C ollector-E m itter Saturation Voltage: VCE(sat) = 1V (M AX)@ 8A â'¢ Fast Sw itching Speeds ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m itter Voltage : KSE44H 1,2 Rating Unit 30 V : KSE44H 4,5 45 V : KSE44H 7,8 60 V : KSE44H 10 -
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transistor eft 323

Abstract: transistor BC-108 ZF-Spule L5/6 M-ZF-Spule L9 FH-ZF-Spule L8 FU-ZF-Spule L12 FH-ZF-Spule L13 3573-092-1 Transistor BC 528 Or. II Transistor AC 180 K Transistorpaar AC 180 K/181 K Blko 4700 uF, 25 V Ferritkern UKW ROÍ a 4x0 , Transistor BC 108 C entspricht 100 kOhm 2-1-25H1-665 TGL wird vom Zentrallager Erfurt 9100 der Typ BC 149 C , V geändert in 323 u BC 108 A geändert in TBC 108 A BC 108 C geändert in TBC 108 C Äquivalente , spricht TNM 100 Das Importlager in Potsdam liefert statt des Transistors T 413 C den Typ BC 109 C oder BC
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transistor eft 323 transistor BC-108 EFT 323 6001-015 bc149 EFT323 3792-OOI-I 459I-O75 57OO9OO
Abstract: SIEM ENS PNP Silicon Darlington Transistor BC 516 â'¢ High current gain â'¢ High collector current â'¢ Complementary type: BC 517 (NPN) Type Marking Ordering Code Pin Configuration 1 2 3 BC 516 - Q62702-C944 C B Package1 ) E TO-92 Maximum Ratings , fl535bQ5 0120521 4M B 1998-11-01 SIEMENS BC 516 Electrical Characteristics at 7a = 25 â'C , SIEMENS BC 516 Total power dissipation Pm =/(7a; 7c) Collector cutoff current / c b o = /(7a) ^ -
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Q12D553 Q1E05E4

5Cs transistor

Abstract: BC 170 transistor PNP Silicon AF Transistor BC 807W BC 808W q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W (NPN) 3 1 2 Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W , Thermal Resistance Junction - ambient 1) Junction - soldering point 1) Symbol Values BC 807W BC , 40 mm x 1.5 mm /0.5 cm2 Cu BC 807W BC 808W Electrical Characteristics at TA = 25 °C, unless
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Q62702-C2328 5Cs transistor BC 170 transistor 807w Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2329 Q62702-C2330

Bc 140 transistor

Abstract: TRANSISTOR BC 141 NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec , ° v(br)ces BC 140 80 \ BC 141 100 Collector-emitter breakdown voltage Tantion de claquage
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Bc 140 transistor TRANSISTOR BC 141 bc 187 npn transistor TRANSISTOR BC 187 transistor BC 310 on BC 187 TRANSISTOR
Abstract: Transistors I PNP General Purpose Transistor BC 858BW /BC 858B · E xtern a l dim ensions (Units : mm) B C 8 5 8 B W (UM T3) · F e a tu re s 1 ; B V c e o < - 3 0 V ( l c = - -1mA) 2 ) C o m p le m e n ts the B C 8 4 8 8 /B C 8 4 8 B W . · P a c k a g e , marking and packaging specifications Type Pa ckage M arkina Code B a s ic ordering unit (pieces) BC868BW U M T3 G3K T106 3000 BC858B SST3 G3K T116 3000 · A b s o lu te maximum ratings ( T a = 2 5 'C ) Param eter C ollecto r-base -
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10IB1 200MH2 I00MH BC858BW

transistor c2311

Abstract: transistor Bc 580 SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features · · · · · For AF input stages , 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC BC BC BC BC BC BC BC BC BC BC BC 846 846 847 847 847 848 848 848 849 849 850 850 AW BW AW BW CW AW BW , Semiconductor Group 189 04.96 SIEMENS BC 846W . BC 850W Maximum Ratings Description , ES BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 -6 5 to 150 30
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Q62702-C2305 transistor c2311 transistor Bc 580 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2306 Q62702-C2307

C2310

Abstract: transistor Bc 580 NPN Silicon AF Transistor BC 846 W . BC 850 W Features q q q q q For AF input , between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 Package BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW BC 848 CW BC 849 BW BC 849 CW BC 850 BW BC 850 CW 1 As 1 Bs 1 Es 1 Fs 1 Gs 1 Js 1 Ks 1 Ls 2 Bs 2 Cs 2 Fs 2 Gs
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C2310 c2312 TRANSISTOR bc 847 BC840 c2308 transistor marking bc 8 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 Q62702-C2312 Q62702-C2313
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