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Part Manufacturer Description Datasheet BUY
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

transistor bc icbo nA npn

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BC 846U PN NPN/PNP Silicon AF Transistor Array · For AF input stages and driver applications 5 , - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA DC , isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking BC 846U PN 1Os Pin , K/W 130 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Apr-22-1999 BC Infineon Technologies
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SC-74 EHP00361 EHP00363 EHP00381 EHP00367 EHP00365

transistor BC 157

Abstract: bcy87 . SYMBOL Per transistor ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector , nA nA nA II DC current gain ratio 0 0 CM 0 .9 0 .8 _ 1.11 1 .2 5 BC Y87 BC Y88 , /K HV/K nA/K nA/K nA/K 6 10 Tam b = - 2 0 C 4 equivalent differential current BC Y87 BC , Philips Semiconductors Product specification NPN general purpose transistors FEATURES · Low , , DESCRIPTION Matched dual NPN transistors in a TO-71; SOT31 metal package. Products are divided into 3 types
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BCY89 transistor BC 157 bcy87 bcy88 transistor bc 470 BCY87 BCY88

C2320

Abstract: Q62702-C2320 BC 817-16W NPN Silicon AF Transistor · For general AF applications · High collector current · , Group V 2 Dec-19-1996 BC 817-16W NPN Silicon AF Transistor Electrical Characteristics at , nA - - 100 hFE - IC = 100 mA, VCE = 1 V, BC . 16 W 100 160 250 IC = 100 , (PNP) Type Marking Ordering Code Pin Configuration Package BC 817-16W 6As Q62702-C2320 1=B 2=E 3=C SOT-323 BC 817-25W 6Bs Q62702-C2278 1=B 2=E 3=C SOT
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BC807W C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs BC808W Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324

1ps sot

Abstract: BC847PN1Ps BC 847PN NPN/PNP Silicon AF Transistor Array · For AF input stages and driver applications · High current gain · Low collector-emitter saturation voltage · Two (galvanic) internal isolated NPN , (BR)EBO 5 - - Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA DC Characteristics per Transistor , Ordering Code Package NPN-Transistor 1=E 2=B 6=C BC 847PN 1Ps SOT-363 4=E 5
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Q62702-C2374 1ps sot BC847PN1Ps bc 104 npn transistor 4E SOT-363

4E SOT-363

Abstract: TRANSISTOR BC 450 pnp BC 846PN NPN/PNP Silicon AF Transistor Array 4 · For AF input stages and driver applications , - V(BR)CES 80 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - , isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation Top View , BC 846PN 1Os Pin Configuration Package 1=E 2=B 3=C 4=E 5=B 6=C SOT-363 Maximum Ratings , Oct-20-1999 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified
Infineon Technologies
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TRANSISTOR BC 450 pnp EHA07193 EHP00364 EHP00368 EHP00369

Marking 1ps sot

Abstract: VPS05604 BC 847PN NPN/PNP Silicon AF Transistor Array 4 · For AF input stages and driver applications , 50 - - V(BR)CES 50 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage , isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation Top View , BC 847PN 1Ps Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum
Infineon Technologies
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Marking 1ps sot

transistor 1Bs

Abstract: ic 817 BC 817U PN NPN/PNP Silicon Transistor Array · For AF input stages and driver applications 5 , )EBO 5 - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - , CBO TS BC 817/818 EHP00221 nA 10 4 Ptot 300 250 max 10 3 200 TA , isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 5 VPW09197 E2 6 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking BC 817U PN 1Bs Pin
Infineon Technologies
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transistor 1Bs BC817UPN EHP00223 EHP00222 EHP00224 EHP00218

bcx56

Abstract: BCX54 BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured , 100 10 100 0.5 1.0 250 160 250 UNITS nA µA nA V V V V V V V V MHz R0 ( 29-November 2001) Central TM Semiconductor Corp. BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT , TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=125°C IEBO VEB=5.0V BVCBO IC=100µA (BCX54) 45
Central Semiconductor
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Bcx56-16 BCX54-10 BCX55-10 BCX56-10 BCX54-16 BCX55-16 BCX56-16

BD NPN transistors

Abstract: BCX56 Central BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE MAXIMUM , nA A nA V V V V V V V V 250 160 250 130 MHz R4 (30-July 2008) Central TM BCX54 BCX55 BCX56 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - , SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar , CONDITIONS MIN ICBO VCB=30V ICBO VCB=30V, TA=125°C IEBO VEB=5.0V BVCBO IC=100A (BCX54) 45 BVCBO
Central Semiconductor
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BD NPN transistors transistor bc icbo nA npn bc transistor icbo nA marking r4 diode MARKING BM SOT89 SOT-89 marking bc 100MH

transistor 1Bs

Abstract: ic 817 BC817UPN NPN/PNP Silicon Transistor Array For AF input stages and driver applications 4 5 , - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA , s; D < 2% 2 Aug-21-2002 BC817UPN Collector cutoff current ICBO = f (TA ) Total power dissipation Ptot = f (TS ) VCB = 25V 400 10 5 mW CBO BC 817/818 EHP00221 nA , NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation VPW09197
Infineon Technologies
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1BS transistor marking 1Bs SC74

ic 817

Abstract: BC817UPN cutoff current ICBO = f (TA) VCB = 25V 10 5 400 mW CBO BC 817/818 EHP00221 nA 10 4 , BC817UPN NPN/PNP Silicon Transistor Array · For AF input stages and driver applications 5 4 , ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA DC , isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 5 VPW09197 E2 6 4 TR2 , Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), hFE = 10 10 3 C BC
Infineon Technologies
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817 c w 817 transistor

Q62702-C2537

Abstract: VPS05604 BC 846PN NPN/PNP Silicon AF Transistor Array 4 · For AF input stages and driver applications , I E = 10 µA, I C = 0 Collector cutoff current ICBO - - 15 nA ICBO - - 5 , ) internal isolated NPN/PNP Transistors in one package 2 1 Tape loading orientation 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C BC , Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics
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Q62702-C2537 846P

bc 104 npn transistor

Abstract: TRANSISTOR BC 6 pnp BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data · For AF input stages and driver , ICBO nA VCB = 30 V, IE = 0 , TA = 25 °C - - 15 VCB = 30 V, IE = 0 , TA = 150 °C - , isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration NPN-Transistor , Package BC 846PN 1Os Q62702- SOT-363 Maximum Ratings Parameter Symbol Values Unit , mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-27-1996 BC 846PN
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TRANSISTOR BC 6 pnp

transistor 1Bs

Abstract: BC817UPN NPN/PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP 5 6 , IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 45 50 5 - - 100 50 100 V nA µA nA - 160 100 - 250 - 400 0.7 1.2 V Transition frequency IC = 50 mA, VCE = 5 V, f = 100 , 10 5 BC 817/818 EHP00221 CBO nA 10 4 300 Ptot 250 10 3 max 200 150
Infineon Technologies
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1BS transistor

Abstract: cutoff current ICBO = f (TA ) VCB = 25V 400 mW 10 5 BC 817/818 EHP00221 CBO nA 10 4 , BC817UPN NPN/PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP 5 6 , 1.2 V IEBO 100 nA ICBO 50 µA ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC , 3 BC 817/818 EHP00223 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 BC 817
Infineon Technologies
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5Cs transistor

Abstract: BC 170 transistor PNP Silicon AF Transistor BC 807W BC 808W q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W (NPN) 3 1 2 Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W , current ICBO = f (TA) VCBO = 60 V BC 807W BC 808W DC current gain hFE = f (IC) VCE = 1 V , Thermal Resistance Junction - ambient 1) Junction - soldering point 1) Symbol Values BC 807W BC
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Q62702-C2328 5Cs transistor TRANSISTOR BC 807w Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2329 Q62702-C2330

bc 104 npn transistor

Abstract: npntransistor BC 847PN NPN/PNP Silicon AF Transistor Array · For AF input stages and driver applivations · High current gain · Low collector-emitter saturation voltage · Two (galvanic) internal isolated NPN , ICBO nA VCB = 30 V, IE = 0 , TA = 25 °C - - 15 VCB = 30 V, IE = 0 , TA = 150 °C - , BC 847PN 1Ps Q62702-C2374 SOT-363 Maximum Ratings Parameter Symbol Values Unit , mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-20-1997 BC 847PN
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npntransistor TRANSISTOR BC 90 1Ps MARKING CODE TRANSISTOR BC 650 c

Bc 140 transistor

Abstract: VPS05604 BC 846S NPN Silicon AF Transistor Array 4 · For AF input stages and driver applications 5 , (BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base , 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking BC 846S 1Ds Pin , 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Nov-08-1999 BC 846S
Infineon Technologies
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Bc 140 transistor

847S

Abstract: VPS05604 BC 847S NPN Silicon AF Transistor Array 4 · For AF input stages and driver applications 5 , (BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base , 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking BC 847S 1Cs Pin , 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Nov-08-1999 BC 847S
Infineon Technologies
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847S marking 1cs

transistor BC 660

Abstract: 846U BC 846U NPN Silicon AF Transistor Array · For AF input stages and driver applications 5 4 , (BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base , 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking BC 846U 1Ds Pin , 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Nov-08-1999 BC 846U
Infineon Technologies
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transistor BC 660 846U H12E
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