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transistor bc 102

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transistor bc 102

Abstract: TRANSISTOR BC 327 HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier , can be manufactured in different pin configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE , Emitter Voltage HN / BC 327 50 V HN / BC 328 30 V Collector Emitter Voltage HN / BC 327 "^CEO 45 V HN / BC 328 '^CEO 25 V Emitter Base Voltage ~^EBO 5 V Collector Current "'c 800 mA Peak , ® SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN / BC 327/328
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bc 357 transistor

Abstract: transistor BC 55 ©metteur lc =2 mA vce =5v vbe 0,55 0,65 0,7 V *The transistor BC 237 is grouped in two classes of DC gain A â'" 6 Le transistor BC 237 est subdivisé en deux classes de gain statique A â'" B The transistor BC 238 is grouped in three classes of DC gain A â'" B â'" C Le transistor BC 238 est subdivisé en trois classes de gain statique A â'" B â'" C The transistor BC 239 is grouped in two classes of DC gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain statique B-C 2/10 358 BC 237
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bc 104 npn transistor

Abstract: bc 103 transistor HN / BC 556.559 PNP Silicon Expitaxial Planar Transistor for switching and AF amplifier , Collector-base cutoff current versus junction temperature 10J HN / BC 556.BC 559 FE 3 2 102 10 10"' 10 , / / 100 200 C Collector current versus base-emitter voltage mA 102 HN / BC 556.BC 559 10 10" 0.5 , manufactured in different pin configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE OUTLINE" on page 80 , owned subsidiary of HtJNEV TECHNUJ.DGY LTD. ) SO 9 Q 0 2 - 9 HN / BC 556.559 Characteristics at T .
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transistor bc 102

Abstract: bc 103 transistor HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier , 102 103mA Ir Common emitter collector characteristics HN / BC 337, BC 338 SEMTECH ELECTRONICS LTD , can be manufactured in different pin configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE , Collector Emitter Voltage HN / BC 337 ^CES 50 V HN / BC 338 ^CES 30 V Collector Emitter Voltage HN / BC 337 ^CEO 45 V HN / BC 338 v CEO 25 V Emitter Base Voltage ^EBO 5 V Collector Current 'c 800 mA
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bc 103 transistor

Abstract: bc 106 transistor HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided , configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE OUTLINE" on page 80 for the available pin options , Maximum Ratings (Ta = 25°C) Symbol Value Unit Collector-Base Voltage HN / BC 546 ^cbo 80 V HN / BC 547 50 V HN / BC 548, HN / BC 549 ^cbo 30 V Collector-Emitter Voltage HN / BC 546 ^ces 85 V HN / BC 547 ^ces 50 V HN / BC 548, HN / BC 549 ^ces 30 V Collector-Emitter Voltage HN / BC 546 ^ceo 65
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TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain IC 107 JC 108 -BC 109 BC107, BC 108, and BC 109 are epitaxial NPN silicon Planartransistors in , » Q62702-C680 BC 107 A Q60203-X107-A BC 107 B Q60203-X107-B BC 1081' Q60203-X108 BC108 A Q60203-X108-A BC 108 B Q60203-X108-B BC 108 C Q60203-X108-C BC 1091) 060203-X109 BC 109 B Q60203-X109-B BC 109 C , BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 , order does not include any exact indication of the current amplification group desired, a transistor of
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TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor BC1071 Q60203-X109-C 10ZKH

Marking 3ds sot

Abstract: BR 101 Transistor SIEMENS PNP Silicon AF Transistor Array · For AF input stages and driver applications · High , with high matching in one package BC856S Fi FI FI U Type BC 856S Marking 3Ds Ordering , Characteristics at 7A=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics per Transistor , Collector-emitter breakdown voltage I q = 10//A, VqE - 0 ^(BR)CES '/ (BR)CBO ^(BR)CEO BC 856S Values typ , Characteristics per Transistor Transition frequency /c = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance
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Marking 3ds sot BR 101 Transistor transistor 5B1 Q62702-C2532 EHP00382

transistor 2sc 548

Abstract: equivalent transistor bc 649 , BC 549, BC550 io' 102 ma â'"h pf Collector-base capacitance CCbo ~ ' (Vcbo) Emitter-base , SIE6 _ r-2-7-2/ BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D- BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages (10 A 3 DIN 41868). They are intended for use in AF input and driver stages (BC 549; BC 550 for low-noise input stages) and as complementary transistors to BC 556, BC 557, BC 558, BC 559 and BC 560. Type
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BC5481 BC650 transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 BC5461 Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688

transistor bc 325

Abstract: transistor bf 179 transistor BC 179 is selected in two classes of DC gain : A â'" B Le transistor BC 179 ast livré an deux , , of BC 107, BC 108, BC 109 * BC 177 * BC 178 BC 179 The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F. n-eamplifier and driver stages. The BC 179 is Foroseen for low noise stages. .es transistors PNP "planar épitaxlal" BC 177, BC 178 et SC 179 sont destinés aux usages BF dans les étages "préamplificateur" et "driver". Le BC 179 est prévu oour les étages faible
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transistor bc 325 transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102

TRANSISTOR BC 137

Abstract: BC107 characteristic 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case (18 A 3 DIN 41876). The , input and driver stages. NPN Silicon Transistors Type B C 1 0 7 1) BC 107 A BC 107 B BC 1081) B C 108 A BC 108 B BC 108 C BC 1091> BC 109 B BC 109 C Ordering code Q62702-C680 Q60203-X107-A , Junction to case ftthJA flthJC Vces Vceo V'ebo B C 107 50 45 6 100 200 50 175 300 B C 108 BC 109 V
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TRANSISTOR BC 109 BC 108 transistor transistor bc 107 NT 101 BC 107 transistor b 108 b 60203-X109

transistor BC 157

Abstract: TRANSISTOR BC 181 AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V
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transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" BC161/BC141 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P

TRANSISTOR BC 157

Abstract: BC181 2SC » â  Ã»23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10
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transistor bc160 transistor BC 55 f15n BC161 transistor BC180 Q62702-C231 Q62702-C239 Q62702-C230-P Q62702-C230-S2 S20V-30V BC161

Bc 140 transistor

Abstract: TRANSISTOR BC 141 NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , \ \ V -2 468, 2 4 6 8 -2 4, 10° 101 102 311 BC 140, BC 141 DYNAMIC , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec
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Bc 140 transistor TRANSISTOR BC 141 bc 187 npn transistor TRANSISTOR BC 187 transistor BC 310 on BC 187 TRANSISTOR

BC250

Abstract: transistor bc250 base emitter voltage mA 102 -k 10 10"1 0.5 BC 250 â'"r i i -VCE= 5 V r -ocor / / â'¢an , BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. 3D £ E max.Q59 , 200 100 0 0 100 200°C ^ ^amb BC 250 , V Relative DC current gain versus collector current 10 te (1mA) 0.1 BC 250
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transistor bc250 BC 250 transistor bc 100

TRANSISTOR BC 413

Abstract: TFK 101 413 â'¢ BC 414 102 ,  BC 413 â'¢ BC 414 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar , the transistor Abmessungen in mm Dimensions In mm Absolute Grenzdaten Absolute maximum ratings , Lagerungstemperaturb'ereich Storage temperature range CBO -CEO U, EBO 'BM tot stg BC 413 45 30 Normgehäuse Case 10 A 3 DIN 41 868 JEDEC TO 92 Z Gewicht â'¢ Weight max. 0,2 g BC 414 50 45 5 100 20 300 150 V V
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TRANSISTOR BC 413 TFK 101 TFK 902 TFK 413 BC413 414 transistor

3cs transistor

Abstract: 3h250 SIEMENS PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current , package ^ F I H BC 857S "> « u i- n - i Type BC 857S Marking 3Cs Ordering Code , Parameter Symbol min. DC Characteristics per Transistor Collector-emitter breakdown voltage lc = 10 mA, /g = , < 300|is; D < 2% 600 LU BC 857S Values typ. max. Unit '/(BR)CEO V 45 ^(BR)CBO 50 , Characteristics per Transistor Transition frequency /c = 20 mA, VcE = 5 V, 1= 100 MHz Collector-base capacitance
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3cs transistor 3h250 FT12E marking Ht SOT-363 Q62702-C2373

846PN

Abstract: VQE 11E per Transistor Collector-emitter breakdown voltage I q - 10 mA, I q -0 ^(BR)CEO BC 846PN , SIEMENS NPN/PNP Silicon AF Transistor Array · For AF input stages and driver applications · High , ) corresponds to pin 1 of device BC 846PN 0 Too View 6 5 4 ijn s jl 12 3 , 1 R FI ñ LI Lit Lil C2 , PIN Configuration Type BC 846PN Marking Ordering Code 10s Q62702-C2537 Package NPN-Transistor 1 = E 2 , specified Parameter AC Characteristics per Transistor Transition frequency /c = 20 mA, VCE = 5 V, f = 100
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VQE 11E EHA07193

transistor c2311

Abstract: transistor Bc 580 SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features · · · · · For AF input stages , 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC BC BC BC BC BC BC BC BC BC BC BC 846 846 847 847 847 848 848 848 849 849 850 850 AW BW AW BW CW AW BW , Semiconductor Group 189 04.96 SIEMENS BC 846W . BC 850W Maximum Ratings Description , ES BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 -6 5 to 150 30
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Q62702-C2305 transistor c2311 transistor Bc 580 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2306 Q62702-C2307

TRANSISTOR

Abstract: transistor bc 144 SIEMENS NPN Silicon AF Transistor â'¢ â'¢ â'¢ â'¢ BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 (PNP) Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1 , . Semiconductor Group 630 flEiSbüS D12D513 371 1998-11-01 SIEMENS BC 368 Electrical , %. Semiconductor Group 631 r â  053SbD5 D1HDS14 5Gà H 1998-11-01. SIEMENS BC 368
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TRANSISTOR transistor bc 144 D12D515 Q15051L

C 548 B

Abstract: B549C asc D fi 23S hü S Q Q Q m S Q T M S I E G _ T -2 ~9~ Z / BC 546 - BC 550 NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC , are intended for use in AF input and driver stages (BC 549; BC 550 for low-noise input stages) and as complementary transistors to BC 556, BC 557, BC 558, BC 559 and BC 560. Type BC 5461 > BC 546 VI BC 546 A BC 546 B BC 5471 1 BC 547 VI BC 547 A BC 547 B BC 5481 » BC 548 VI BC 548 A BC 548 B BC 548 C Ordering
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BC547 C 548 B B549C C 547 B TRANSISTOR BC650 transistor bc 549 equivalent C547B Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q62702-C689 Q62702-C689-V4 Q62702-C689-V1
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