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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor b 595

Catalog Datasheet MFG & Type PDF Document Tags

b 595 transistor

Abstract: MA4T24300 Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 , Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as , standard transistor is available as a chip for hybrid oscillator circuits or in hermetic ceramic packages , /A-COM proprietary high temperature refractory barrier/gold metalization process. The MA4T243 transistor , +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and
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MA4T24300 b 595 transistor transistor 5 Amp 700 volt MA4T24335 transistor b 595

IC 3263

Abstract: transistor c 3263 Silicon Bipolar Transistor Case Style MA4T56800 V2.00 Chip - MA4T56800 Case Style 1170 A DIM. A B , Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor , MA4T568 is a medium power, high fT silicon NPN transistor designed to work at 8 - 12 volts VCC and with , chip transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating , provide maximum device reliability and ease of chip and wire assembly. This transistor series is also
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IC 3263 transistor c 3263 medium power high voltage transistor SILICON npn POWER TRANSISTOR c 869 MA4T568000

TRANSISTOR K 1507

Abstract: : Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 3 Volt, Low Noise High fT Silicon Transistor , : Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 3 Volt, Low Noise High fT Silicon Transistor , Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor Features q q q q q , MA4T6310 transistor series has high fT and low noise when operated with 0.3 to 2.0 milliamperes current , frequency range of 0.5 to 3 GHz. The MA4T6310 transistor is useful for wireless communication systems from
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TRANSISTOR K 1507 MA4T631000 MA4T631033 MA4T631039 MA4T631035

b 595 transistor

Abstract: Bipolar Transistor Features · High Output Power, 23 dBm PldB @ 1 GHz · High Gain-Bandwidth Product, 4 GHz fT · High Power Gain, I S21E 12 = 12 dB @ 1 GHz G TU (m ax.) = 11 d B @ 2 GHz MA4T56800 V2.00 Description The MA4T568 is a m edium power, high fT silicon NPN transistor designed to work at 8 - 12 volts , ceramic package. This chip transistor is designed for use in m edium pow er amplifiers through 3 GHz and , 8769 Europe: Tel. +44(1344)869 595 Fax +44 (1344) 300 020 Medium Power, 2 Volt, High fT NPN
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Abstract: : Tel. +44(1344)869 595 Fax +44(1344)300 020 3 Volt, Low Noise High fT Silicon Transistor , High fT Silicon Transistor Features · · · · · 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 , at small current is important. The MA4T6310 transistor series has high fT and low noise when operated , 3-5 volt battery operated VCO in the frequency range o f 0.5 to 3 GHz. The MA4T6310 transistor is , +81 (03) 3226-1451 1 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 3 Volt, Low Noise -
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2N6665

Abstract: MA42001-509 America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , America: Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81 (03)3226-1671 â  Europe: Tel. +44 (1344)869 595 , (03) 3226-1451 _ 8-69 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 SbMEEOS OOOl?1^ S2T , MA42161 is a low noise silicon planar epitaxial transistor for 0.5 to 2.0 GHz amplifiers. These , : Tel. (800) 366-2266 â  Asia/Pacific: Tel. +81(03)3226-1671 â  Europe: Tel. +44(1344)869 595 Fax (800
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MA42001 MA42021 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ MA42111 MA42141 MA42151 MA42051

transistor b 595

Abstract: Volt, High fT NPN Silicon Bipolar Transistor Features · High O utput Power, 23 dBm PldB @ 1 GHz · , 2 GHz Description The MA4T568 is a medium power, high fT silicon NPN transistor designed to w , , for use in hybrid applications as an amplifier or moderate pow er oscillator. It can also b e supplied in a common collector ceramic package. This chip transistor is designed for use in medium pow er , 3 3263 8769 1 Europe: Tel. +44(1344)869 595 Fax +44(1344)300 020 Medium Power, 2 Volt
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TRANSISTOR 3FT 81

Abstract: T20 64 diode an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz Features · · · · · · , Mismatch Tolerance 3rd Order IMD Symbol b v ces Min 65 22 30 3.0 15 10 35 10 Max 1.0 - Units V mA , C E S b v ceo b v cer B V ebo 120 - V hF E Gp V cc=25 V, lco=25 mA, P O U T=2.0 W , +81 (03) 3226-1451 Europe: 9-163 Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, 2W PH1617-2 V2.00 RF Test Fixture INPUT ai,- L [ T - 50 OHMS w 150 1
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TRANSISTOR 3FT 81 T20 64 diode transistor 81 110 w 63 transistor 9163

LC1 F150

Abstract: d 1711 Europe: Tel. +44 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, 10W , m a n A M P com pany Wireless Bipolar Power Transistor, 10W 1.45-1.60 GHz Features · · · · · · , Mismatch Tolerance 3rd Order IMD Symbol b v ces Ic e s B V cho Min 60 - Max 2.0 - Units V mA V , 20 30 3.0 15 10 40 10 bv c e , b V e, o h FE 120 - V dB % Gp 'lc Vcc=25 V , ) 3226-1451 Europe: 9-151 Tel. + 4 4 (1 3 4 4 )8 6 9 595 Fax +44 (1344) 300 020 Wireless Bipolar
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LC1 F150 d 1711 PH1516-10

PH1617

Abstract: 1445s ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz Features · · , S BVceo b v cer bv EB0 e \ Gp 1c RL VSWR-T IMDa Vcc=25 V, lco=100 mA, PO U T=10 W, F , ) 3226-1671 Fax +81 (03) 3226-1451 M/A-COM, Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, 10W PH1617-10 RF Test Fixture ARTWORK DIMENSIONS IN MILS P A R , ) 3226-1451 Europe: _ 9-171 Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless
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PH1617 1445s transistor D 1761

QE R 643

Abstract: · Features MA4T243 Series V3.00 Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages , below 4 dB. This industry standard transistor is available as a chip for hybrid oscillator circuits or , /gold metalization process. The MA4T243 transistor is em itter ballasted using ion im planted , (1344) 869 595 Fax +44(1344)300 020 Silicon Bipolar High fT Low Noise Medium Power 12 Volt
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QE R 643

balun transformer 75 ohm

Abstract: 300 ohms balun RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel , /Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. -1-44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, UF281OOH IOOW, 28V v2.00 Typical , Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, lOOW, 28V UF281 OOH v2.00 Typical Device Impedance Frequency (MHz) Z
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CRC10 balun transformer 75 ohm 300 ohms balun 15AWG

TRANSISTOR K 1507

Abstract: . + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 3 Volt, Low Noise High fT Silicon Transistor , 9 595 + 4 4 (1 3 4 4 )3 0 0 020 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series , fT Silicon Transistor · · · · · Features 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 , important. The MA4T6310 transistor series has high and low noise when operated with 0.3 to 2.0 milliamperes , the frequency range of 0.5 to 3 GHz. The MA4T6310 transistor is useful for wireless communi cation
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Transistor c54

Abstract: F1 J37 ) 300 020 PH0810-35 Wireless Bipolar Power Transistor, 35W v2.00 RF Test Fixture "B P , = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o , ) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. i-44 (1344) 869 595 Fax +44 (1344) 300 020 PH0810-35 Wireless Bipolar Power Transistor, 35W v2.00 Typical Broadband Performance , Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1 MHz Clam A Claaa A6 6 6 B ii 2 z 3
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Transistor c54 F1 J37 cl 740 transistor 431 N N4245

IU 1047

Abstract: transistor 1005 oj V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz 744 , Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting b L .D ;i4 m i , Symbol b v ces iN -r'ilS *00'j' C M .L . IH : ( VJW Min 65 22 30 30 15 10 35 10 Max 1.0 , Conditions ^ C E S b v ce0 BV ceb bvE B0 120 V V dB hF E , ) 3226-1671 Fax +81 (03) 3226-1451 Europe: 9-179 Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
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IU 1047 transistor 1005 oj PH1819-2

F1 J37

Abstract: b 595 transistor * z-,-3 y-z .- =: -= z =z = an AMP company Wireless Bipolar Power Transistor , ) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 PH1516-60 Wireless Bipolar Power Transistor, 60W RF Test Fixture "cc vB GD CR1 DUTPUT 50 OHMS INPUT 50 OHMS ARTWORK Cl c2 c3 c4 C5 C6 18pF DIMENSIONS ATC MILS B CAPACITOR 5OOOpF , ) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
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PHI516160 PHI516 wacom

TRANSISTOR 185 846

Abstract: 1N914B : Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, PH1819 , 8 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 B Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, Typical , =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819 , 0.9 0.9 Class A Class AB 0.6 3rd 0.6 b E zi z z 0.3 0 -60 20
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TRANSISTOR 185 846 1N914B

93C24

Abstract: : _ 9-167 Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor , an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features · · · · · · · · NPN Silicon M icrowave Pow er Transistor Designed for Linear Amplifier Applications Class AB: -33 dB c , System P H 1 6 1 7 -4 N 9/3 C24 7 7 ) r r .loo-.oio ceb ' I 230 (594) 12 b (1 8 .4 2 , 0JC Symbol ^CBO VC E S VE B O 'c Rating 60 60 3.0 0.7 19.5 200 -55 t o +150 7.5 Units V V V A W °C °C
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93C24 PH1617-4N

L0025

Abstract: LF2802A ) 3226-1451 _ 9-69 Europe: Tel. +44(1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 2W , Afa M an AMP company RF MOSFETPower Transistor, 2W, 28V 500-1000 MHz LF2802A Features â , to 1400 MHz IT 'LL â'" A â  B- a V2.00 Absolute Maximum Ratings at 25°C ilâ'"L , INCHES MIN MAX ION MAX A 20.70 £0.96 .eis £25 B 1435 14.61 565 575 C 13.72 1422 .540 .560 II 627 ,   Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 RF
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L0025 f10 transistor

2N6665-509

Abstract: 2N5054 7 1 Fax +81 (03) 3226-1451 Europe: Tel. Fax 1 + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 , M/A-COM, Inc. + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , Europe: Tel. Fax + 4 4 (1 3 4 4 )8 6 9 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise , 595 + 4 4 (1 3 4 4 )3 0 0 020 General Purpose Low Noise Bipolar Transistors V3.00 MA42141 , Range = 300 MHz to 2.0 GHz · Geometry = 63 The MA42141 NPN silicon planar transistor features excel lent
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MA42121 MA42181
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