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Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor ac 127

Catalog Datasheet MFG & Type PDF Document Tags

transistor ac 127

Abstract: AC127 AC 127 npn-Transistor legierter npn-GermaniumTransistor Der Transistor AC 127 ist für die Verwendung als NF-Verstärker geeignet. Die Anschlüsse sind vom Gehäuse elektrisch isoliert Telefunken Electronic
Telefunken Electronic
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PC123 optocoupler

Abstract: PC123 optocoupler example PS2705A-1 AC input, transistor coupler, high isolation 4-pin SOP 2.54 mm PS2805A-1 AC input, transistor coupler, high isolation 4-pin SSOP 1.27 mm Loop detector PS2521/25 DC/AC input , isolation voltage (min. 2.5 kV) transistor coupler 4-pin SSOP 1.27 mm PS2811-1 High isolation voltage (min. 2.5 kV) transistor coupler 4-pin SSOP 1.27 mm PS2911-1 High isolation voltage (min. 2.5 kV) transistor coupler 4-pin Mini Flat 1.27 mm Benefits and advantages · · · ·
NEC
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PC123 optocoupler PC123 optocoupler example TLP612 pc123 opto optocoupler PC123 transistor ac 127 EPMC-PU-0009-1
Abstract: ; typ. 200 mâ"¦ @ 25 °C per switch Output full short circuit protected Overtemperature protection , diodes Wide temperature range; â' 40 °C < Tj < 150 °C Type Q67000-A9283 P-TO220-7-11 TLE , integrated freewheeling diodes. A monitoring circuit for each output transistor detects whether the particular transitor is active and in this case prevents the corresponding source transistor (sink transistor) from conducting in sink operation (source operation). Therefore no crossover currents can occur Infineon Technologies
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5205-2GP Q67006-A9237 P-DSO-20-10 5205-2G Q67006-A9325 P-TO263-7-1
Abstract: Outlines P-TO263-7-1 Option E3180 (Plastic Transistor Single Outline Package) 4.4 10 ±0.2 1.27  , ; typ. 200 mâ"¦ @ 25 °C per switch Output full short circuit protected Overtemperature protection , Wide temperature range; â' 40 °C < Tj < 150 °C Type Q67000-A9290 P-TO220-7-11 TLE 5206-2GP , integrated freewheeling diodes. A monitoring circuit for each output transistor detects whether the particular transitor is active and in this case prevents the corresponding source transistor (sink Infineon Technologies
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Q67006-A9239 5206-2G Q67006-A9323 5206-2S Q67000-A9326 P-TO220-7-12

transistor 30 j 127

Abstract: transistor d 965 al Derate above 25°C 0.16 W /°C 1.75 Watts 0.014 W /°C T j, TSfg - 6 5 t o + 150 °C Symbol Max Unit Therm al Resistance, Junction to Case PÌ0JC 6.25 °C /W Therm al Resistance, Junction to Am bient* PÌ0JA 71.4 CASE 369-07 °c/w Total Power , 4 2C ELECTRICAL CHARACTERISTICS (T q = 2 5 °C unless otherwise noted) Characteristic Symbol , hfe I â'¢ ftest- 2 Motorola Bipolar Power Transistor Device Data M J D 4 1 C M J D 4 2C
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transistor 30 j 127 transistor d 965 al MJD41C/D TIP41 TIP42 MJD41C MJD42C

transistor 228 T3

Abstract: A 673 transistor Current IB 0.6 Ade Total Power Dissipation @ Tq = 25°C Derate above 25°C PD 15 0.12 Watts W/°C Total Power Dissipation* @ Ta = 25°C Derate above 25°C PD 1.56 0.0125 Watts W/°C Operating and Storage Junction Temperature Range Tj, Tstg -65 to+150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R0JC 8.33 °C/W Thermal Resistance, Junction to Ambient* R9JA 80 °c/w Lead Temperature for Soldering Purpose Tl 260 °c ELECTRICAL CHARACTERISTICS
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TIP47 TIP50 MJD47 MJD50 transistor 228 T3 A 673 transistor 369A-13 MJD47/D

IC 40106 pin diagram

Abstract: CI 40106 -7-1 (Plastic Transistor Single Outline Package) +0.4 4.6 - 0 .2 1 X 45° 1.27 +0.1 oo oo LO , TLE 4271 P-T0220-7-11 (Plastic Transistor Single Outline Package) 1 + .2 00 1.27 ±0 .1 , . P-T0220-7-8 (Plastic Transistor Single Outline Package) 4.6 1.27 10.2 02 2.6 3.0 1 , base of a series transistor via a buffer. Saturation control as a function of the load current , TLE 4271 Absolute Maximum Ratings Ti = - 40 to 150 °C Parameter Symbol Limit Values min
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IC 40106 pin diagram CI 40106 SMD 40106 Q67000-A9210-A901 Q67000-A9244-A901 P-T0220-7-12 067006-A9195-A901 P-T0263-7-1 Q67000-A9210-C801

PS8551L4

Abstract: PS2581 : Transistor output type Collector emitter voltage Orange: AC input 18 Transistor output / AC input , (Option), BSI ·· High VCEO (350 V) ·· Insulation thickness: 0.4 mm 17 Transistor output / AC , ±5 mA 80 IF = ±1 mA 40 VCEO in V TRANSISTOR OUTPUT - AC INPUT Absolute Maximum Ratings , IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house , . Transistor output optocoupler ff Single transistor output ff Darlington transistor output Based on a
NEC
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PS8551L4 PS2581 PS9317 PS9817A-1 NEC PS2581 PS9451 SO-16 25KV/ EPMC-PU-0038-4
Abstract: Transistor M JD 243* DPAK For Surface Mount Applications â'˜ M o t o r o la P r e fe r r e d D e v , SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS MAXIMUM RATINGS Rating Symbol C o , above 25°C Pd 12.5 0.1 Watts W /°C Total Device Dissipation @ T /\ = 25°C * Derate above 25°C Pd 1.4 0.011 Watts W /°C T j, TSfg - 6 5 t o + 150 °C Symbol Max Unit 10 89.3 °c/w O perating and Storage Junction Temperature Range THERMAL -
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MJD243/D

BY164

Abstract: TCA160 â'¢c Silicon p-n-p planar epitaxial transistor in plastic encapsulation. Suitable for use in high , ~ MHz â'¢c dag C/W Silicon n-p-n planar epitaxial transistor in plastic encapsulation , MHz â'¢c deg C/W Silicon p-n-p planar epitaxial transistor in plastic encapsulation , V mA â'¢c Silicon n-p-n high voltage power transistor in metal envelope, intended for use in , % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For
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BY164 TCA160 Mullard C296 TAA310A TAA700 TBA480 AC187 BC157 BC158 BC159 BC186 BC187

MOTOROLA MJD122

Abstract: transistor 3568 overall value. REV 1 Motorola Bipolar Power Transistor Device Data 3-563 MJD122 MJD-127 ELECTRICAL , Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS MJD122 MJD-127 PNP MJD127 20,000 10,000 s 7000 , CURRENT (AMP) Figure 4. "On" Voltages 3-664 Motorola Bipolar Power Transistor Device Data MJD122 MJD-127 , Transistor Device Data MJD122 MJD-127 RB & Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS Di, MUST BE FAST , Total Power Dissipation* @ Ta - 25°C Derate above 25° C Pd 1.75 0.014 Watts W/°C Operating and
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TIP125-TIP127 JD122 MOTOROLA MJD122 transistor 3568 darlington transistor with built-in temperature c 1N5825 MSD6100 2N6040-2N6045 P120-T

BS250

Abstract: transistor wz Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BS250 DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and , A Total power dissipation up to Tamb = 25 °C Ptot max. 0.83 W Drain-source ON-resistance -lD = , Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BS250 RATINGS Limiting , dissipation up to Tamb = 25 °C (note 1 ) Ptot Storage temperature range Tstg Junction temperature Tj max. 45
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transistor wz transistor BS250 to92 transistor pinout Z22045 7Z94273 SC-43
Abstract: MITSUBISHI SEMICONDUCTOR M63827WP/DP Taiwan Aâ'™ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the , ICs have resistance of 2.7kâ"¦ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor -
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16P4X-A 16P2X-B 16PIN
Abstract: Philips Semiconductors Product specification NPN medium power transistor BC368 FEATURES , transistor in a TO -92; S O T 54 plastic package. PNP com plem ent: BC369. LIMITING VALUES In accordance , - 0.83 W T s tg storage tem perature -6 5 +150 °C Tj junction tem perature - 150 °C Tam b operating am bient tem perature -6 5 +150 °C Tamb < 25 °C; note 1 Note 1. T ran sistor m ounted on an FR4 printed-circuit board. 1999 A pr 26 2 -
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darlington array with clamp diode 2A

Abstract: on semiconductor "Transistor Arrays" -unit 500mA Darlington transistor array with clamp diode DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the , Darlington transistors. These ICs have resistance of 2.7kQ between input transistor bases and input pins. A , transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum , temperature -40 -+85 °C Tstg Storage temperature -55-+125 °C Feb. 2003 A MITSUBISHI ELECTRIC POWEREX
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darlington array with clamp diode 2A on semiconductor "Transistor Arrays" TRANSISTOR BI 185 power ex DARLINGTON ARRAYS 24 "transistor array"

BT 156 transistor

Abstract: TRANSISTOR BJ 122 Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy VHF Transmitters Features: â  High transistor dissipation rating (Pj) = 2 W max. â  Low output capacitance (C0 , planar transistor intended for frequency multiplier service to 175 MHz. The 40637A is particularly , CURRENT . . "C 0.2 A TRANSISTOR DISSIPATION: PT At case temperature up , Soldering): °C At distances > 1/16 in. (1.58 mm) from seating plane for 10 s max. 265 295 8-73
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RCA-40637A BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 13-MH 92CS- 92CS-20223
Abstract: MITSUBISHI SEMICONDUCTOR M63828WP/DP Taiwan Aâ'™ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the , ICs have resistance of 10.5kâ"¦ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor -
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P521 OPTO

Abstract: p181 opto SOP4 Lead pitch = 1.27 mm AC Input SEMKO-approved TST part recm'ed TLP284(4) 1 2 16 15 14 , -4 1 2 3 SOP16 4-channel version of the TLP284 Lead pitch = 1.27 mm AC Input , part recm'ed SOP4 Lead pitch = 1.27 mm AC input SEMKO-approved TST part recm'ed TLP180(4) 1 , 8 SOP16 4-channel version of the TLP280 Lead pitch = 1.27 mm AC input SEMKO-approved GB , also offered with a wide selection of output (transistor, thyristor, triac, IC output and photorelay
Toshiba
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P521 OPTO p181 opto P521 opto coupler Opto Coupler p181 opto P181 p421 opto TLP521-1 BCE0034E

SMD transistor UY

Abstract: smd transistor 406 Dissipation Per Stage (mW) Derate 1.33 mW/°C above 25" Ambient 190 190 190 190 190 190 190 190 Max Cont ,   AC and DC input versions available â  3,750 Volt input-to-output isolation â  Small DIP package , 25°C Min Max Units 2500 â'" VRMS 1011 _ Ohms â'" 2 PF -40 125 °C -40 85 °C _ 260 °C 33 â , LDA201 : Pkg. F LDA211 : Pkg. Single Transistor Detector (Typical) 0123456789 10 Collector-Emitter , : Single transistor ("0") or Darlington transistor ("1") output configuration â  Z: Number of input
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LDA100 LDA101 LDA110 LDA111 LDA200 LDA210 SMD transistor UY smd transistor 406 1981-R TRANSISTOR SMD catalog smd transistor 079 transistor smd 127

nec optocoupler

Abstract: igbt display plasma 10 DC, general purpose AC, general purpose Single Transistor Optocouplers, DC & AC , DC, high isolation voltage 14 AC, high isolation voltage 15 Single Transistor , = 100 to 400 11 Single Transistor, General Purpose AC Optocouplers Absolute Maximum Ratings , . 12 M = 100 to 400 Single Transistor DC & AC Optocouplers, Optimized for Power Supplies , Transistor AC Optocouplers, Guaranteed 0.4mm Insulation (BSI) Absolute Maximum Ratings Package Part
California Eastern Laboratories
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nec optocoupler igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 SSOP12 CL-610B
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