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transistor a928

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 162.1 150.7 139.8 127.7 115.8 98.9 77.0 24.8 â'"58.9 â'"92.8 â'"120.5 â'"150.7 176.6 136.6 Teledyne Cougar
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transistor A1045 MIL-HDBK-217E
Abstract: Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 162.1 150.7 139.8 127.7 115.8 98.9 77.0 24.8 â'"58.9 â'"92.8 â'"120.5 â'"150.7 176.6 136.6 Agilent Technologies
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transistor A1207 1500MH 5963-2498E
Abstract: '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"78.5 â'"79.9 â'"82.6 â'"84.3 â'"84.9 â'"88.3 â'"89.2 â'"91.5 â'"92.8 â'"94.0 â'"97.7 â Agilent Technologies
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transistor a920 transistor a1266 transistor A915 A1279 transistor a640 UTM-1053 1000MH 5963-3240E 5963-2510E
Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , â'".4 â'"41.5 â'"71.5 â'"92.8 â'"108.7 â'"120.2 â'"130.0 â'"139.1 â'"146.6 â'"152.7 â Teledyne Cougar
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transistor A798 A1309 transistor PP-38
Abstract: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , '"68.2 â'"79.3 â'"87.1 â'"92.8 â'"97.4 â'"101.4 _105.7 â'"108.7 dB 14.644 14.574 14.473 Teledyne Cougar
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Abstract: +100°C â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â Teledyne Cougar
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Abstract: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , .898 .911 .907 175.3 170.6 159.9 141.4 108.7 56.4 â'".4 â'"41.5 â'"71.5 â'"92.8 â Agilent Technologies
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6822 TRANSISTOR equivalent 400MH P-222 SN62PRMAB3 5963-3232E 5963-2564E
Abstract: â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â Agilent Technologies
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A1308 transistor 500MH 5963-2545E
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"179.6 159.4 130.4 98.6 72.4 48.4 26.2 â'"1.0 â'"29.1 â'"51.6 â'"68.2 â'"79.3 â'"87.1 â'"92.8 â Agilent Technologies
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a1281 TRANSISTOR equivalent 5963-2555E
Abstract: TRANSISTOR ÂuPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , 0.536 0.523 0.506 0.522 â'"13.9 â'"25.9 â'"37.8 â'"48.5 â'"58.4 â'"71.5 â'"82.4 â'"92.8 â Renesas Electronics
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Abstract: ) INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 30 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 8) and , output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor , '49.0 â'57.0 â'65.7 â'68.6 â'77.5 â'84.9 â'92.8 â'100.5 â'110.4 â'119.0 â'128.7 â Renesas Electronics
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Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '52.3 â'57.5 â'62.7 â'67.2 â'71.7 â'78.3 â'84.4 â'88.7 â'92.8 VCE = 2 V, IC = 3 mA, ZO = Renesas Electronics
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nec A1394 PU10104EJ01V0DS
Abstract: heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , '13.18 â'12.03 â'11.04 â'10.13 â'9.28 Angle (°) +109.99 +99.58 +88.80 +77.69 +66.77 +55.88 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK Analog Devices
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transistor a2160 a2324 a2530 a2746 ADL5601 0603LS-NX 09-12-2013-C ADL5601ARKZ-R7 ADL5601-EVALZ D08219-0-11/13
Abstract: TRANSISTOR ÂuPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 Ã , '"57.0 â'"58.2 â'"58.7 â'"60.3 â'"62.0 â'"65.1 â'"67.3 â'"70.4 â'"72.3 â'"75.4 â'"78.5 â'"84.2 â'"92.8 Renesas Electronics
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nec a1232
Abstract: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , '74.0 â'77.6 â'81.5 â'85.4 â'89.1 â'92.8 0.388 0.417 0.452 0.474 0.508 0.535 0.568 NEC
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transistor A1024 A1712 2SC5761-T2
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