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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

transistor a928

Catalog Datasheet MFG & Type PDF Document Tags

transistor A1045

Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 162.1 150.7 139.8 127.7 115.8 98.9 77.0 24.8 â'"58.9 â'"92.8 â'"120.5 â'"150.7 176.6 136.6
Teledyne Cougar
Original

transistor A1207

Abstract: Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 162.1 150.7 139.8 127.7 115.8 98.9 77.0 24.8 â'"58.9 â'"92.8 â'"120.5 â'"150.7 176.6 136.6
Agilent Technologies
Original

transistor a920

Abstract: transistor A915 '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"78.5 â'"79.9 â'"82.6 â'"84.3 â'"84.9 â'"88.3 â'"89.2 â'"91.5 â'"92.8 â'"94.0 â'"97.7 â
Agilent Technologies
Original

transistor A798

Abstract: A1309 transistor Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , â'".4 â'"41.5 â'"71.5 â'"92.8 â'"108.7 â'"120.2 â'"130.0 â'"139.1 â'"146.6 â'"152.7 â
Teledyne Cougar
Original
Abstract: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , '"68.2 â'"79.3 â'"87.1 â'"92.8 â'"97.4 â'"101.4 _105.7 â'"108.7 dB 14.644 14.574 14.473 Teledyne Cougar
Original
Abstract: +100°C â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â Teledyne Cougar
Original

6822 TRANSISTOR equivalent

Abstract: transistor A798 Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , .898 .911 .907 175.3 170.6 159.9 141.4 108.7 56.4 â'".4 â'"41.5 â'"71.5 â'"92.8 â
Agilent Technologies
Original

A1308 transistor

Abstract: â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"52.3 â'"66.9 â'"81.0 â'"92.8 â'"102.7 â'"109.8 â'"114.9 â'"119.4 â'"123.2 â'"127.1 â'"130.8 â
Agilent Technologies
Original

a1281 TRANSISTOR equivalent

Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"179.6 159.4 130.4 98.6 72.4 48.4 26.2 â'"1.0 â'"29.1 â'"51.6 â'"68.2 â'"79.3 â'"87.1 â'"92.8 â
Agilent Technologies
Original
a1281 TRANSISTOR equivalent 500MH PP-38 P-222 SN62PRMAB3 5963-3232E 5963-2555E
Abstract: TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , 0.536 0.523 0.506 0.522 â'"13.9 â'"25.9 â'"37.8 â'"48.5 â'"58.4 â'"71.5 â'"82.4 â'"92.8 â Renesas Electronics
Original
Abstract: ) INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 30 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 8) and , output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor , '49.0 â'57.0 â'65.7 â'68.6 â'77.5 â'84.9 â'92.8 â'100.5 â'110.4 â'119.0 â'128.7 â Renesas Electronics
Original

nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '52.3 â'57.5 â'62.7 â'67.2 â'71.7 â'78.3 â'84.4 â'88.7 â'92.8 VCE = 2 V, IC = 3 mA, ZO =
Renesas Electronics
Original
nec A1394 PU10104EJ01V0DS

transistor a2160

Abstract: a2324 heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , '13.18 â'12.03 â'11.04 â'10.13 â'9.28 Angle (°) +109.99 +99.58 +88.80 +77.69 +66.77 +55.88 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK
Analog Devices
Original
transistor a2160 a2324 a2530 a2746 ADL5601 0603LS-NX 09-12-2013-C ADL5601ARKZ-R7 ADL5601-EVALZ D08219-0-11/13

nec a1232

Abstract: TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 à , '"57.0 â'"58.2 â'"58.7 â'"60.3 â'"62.0 â'"65.1 â'"67.3 â'"70.4 â'"72.3 â'"75.4 â'"78.5 â'"84.2 â'"92.8
Renesas Electronics
Original
nec a1232

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , '74.0 â'77.6 â'81.5 â'85.4 â'89.1 â'92.8 0.388 0.417 0.452 0.474 0.508 0.535 0.568
NEC
Original
transistor A1024 A1712 2SC5761-T2
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