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Part Manufacturer Description Datasheet BUY
OPA338NA/3K Texas Instruments MicroSIZE, Single-Supply CMOS Operational Amplifier MicroAmplifier(TM) Series 5-SOT-23 -40 to 85 visit Texas Instruments
OPA338NA/3KG4 Texas Instruments MicroSIZE, Single-Supply CMOS Operational Amplifier MicroAmplifier(TM) Series 5-SOT-23 -40 to 85 visit Texas Instruments
OPA338NA/250G4 Texas Instruments MicroSIZE, Single-Supply CMOS Operational Amplifier MicroAmplifier(TM) Series 5-SOT-23 -40 to 85 visit Texas Instruments
OPA338NA/250 Texas Instruments MicroSIZE, Single-Supply CMOS Operational Amplifier MicroAmplifier(TM) Series 5-SOT-23 -40 to 85 visit Texas Instruments Buy
INA338AIDGST Texas Instruments Wide-Temperature, Precision Instrumentation Amplifier with Shutdown 10-VSSOP -40 to 125 visit Texas Instruments Buy
OPA338UA Texas Instruments MicroSIZE, Single-Supply CMOS Operational Amplifier MicroAmplifier(TM) Series 8-SOIC -40 to 85 visit Texas Instruments Buy

transistor a338

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transistor a338

Abstract: transistor A347 +115°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , '"29.7 â'"29.6 â'"29.6 â'"29.6 â'"29.8 â'"30.0 â'"30.3 â'"30.0 â'"31.4 â'"31.9 â'"32.6 â'"33.3 â'"33.8 , '"5.42 â'"5.14 â'"4.63 â'"4.04 â'"3.38 â'"2.68 â'"1.98 â'"1.25 â'".66 â'".04 .57 1.00 1.57 2.09
Teledyne Cougar
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transistor on 4409

Abstract: A1357 transistor Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105 , '"46.5 â'"43.7 â'"41.1 â'"38.9 â'"37.1 â'"35.2 â'"34.5 â'"34.2 â'"33.8 â'"33.2 â'"32.3 S22 Ang
Agilent Technologies
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A1712

Abstract: a1712 transistor Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105°C/W 150 mW 16 , '"46.5 â'"43.7 â'"41.1 â'"38.9 â'"37.1 â'"35.2 â'"34.5 â'"34.2 â'"33.8 â'"33.2 â'"32.3 S 22
Teledyne Cougar
Original

a639 transistor

Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"16.8 S22 Ang 15.5 2.7 â'"4.2 â'"8.9 â'"13.5 â'"17.8 â'"22.0 â'"26.0 â'"29.9 â'"33.8 â
Teledyne Cougar
Original

8 905 958 460

Abstract: , MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above , '"12.5 â'"16.9 â'"21.2 â'"25.4 â'"29.6 â'"33.8 â'"38.0 â'"42.1 â'"46.2 â'"50.3 â'"54.3 â'"58.4 â
Agilent Technologies
Original

A706 transistor

Abstract: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 13.1 5.6 1.4 â'"3.0 â'"8.0 â'"12.5 â'"16.9 â'"21.2 â'"25.4 â'"29.6 â'"33.8 â'"38.0 â
Teledyne Cougar
Original

transistor a458 pin configuration

Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"16.8 S22 Ang 15.5 2.7 â'"4.2 â'"8.9 â'"13.5 â'"17.8 â'"22.0 â'"26.0 â'"29.9 â'"33.8 â
Agilent Technologies
Original

wv3 transistor

Abstract: TRANSISTOR wv4 , SHARP LZ2426J PIN DESCRIPTION SYMBOL PIN NAME NOTE OD Output transistor drain OS Output signals 0rs Reset transistor clock h1, 0v2, 0v3, 0v4 Vertical shift register clock 1 0h1, 4>h2, ¿h1b, 0h2b , SYMBOL RATING UNIT Output transistor drain voltage vod Oto +15 V Overflow drain voltage vofd 0 to +30 V , SYMBOL MIN. TYP. MAX. UNIT NOTE Ambient operating temperature Topr 25.0 °C Output transistor drain , suppression ratio ABL 1 000 10 Output transistor drain current lod 4.0 8.0 mA Output impedance Ro 400
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OCR Scan
wv3 transistor TRANSISTOR wv4 14-pin cmos IMAGE SENSOR LR38580 AAFA1 sharp CMOS image sensor IP014- P-0400A 14-PIN WDIP014-P-0400A
Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"35.3 â'"36.5 â'"37.6 â'"37.8 â'"37.3 â'"36.7 â'"35.0 â'"33.8 23.4 10.6 4.1 .7 â'"1.0 â Teledyne Cougar
Original
MIL-HDBK-217E
Abstract: +100°C â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"22.5 â'"33.8 â'"45.1 â'"60.5 4 Product Options UTO â'" 509R Model Number Prefix UTOUTMPPA Teledyne Cougar
Original
PP-38

L817

Abstract: sharp CCD Image Sensor RD Reset transistor drain OD Output transistor drain OS Output signals ¿rs Reset transistor , °C) PARAMETER SYMBOL RATING UNIT NOTE Output transistor drain voltage Vod Oto +15 V Reset transistor drain voltage Vrd Oto +15 V Overflow drain voltage vofd Internal output V 1 Test pin, Ti VT1 , Ambient operating temperature Topr 25.0 °C Output transistor drain voltage Vod 12.0 12.5 13.0 V Reset transistor drain voltage Vrd Vod V Overflow drain clock p-p level vfsofd 12.0 12.5 13.0 V 1
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OCR Scan
LZ2315 LZ2316AR LZ2315A L817 sharp CCD Image Sensor FV410 LZ2315A/LZ2316 LZ2315A/LZ2316AR WDIP016-N-0500C

A1308 transistor

Abstract: â'"62 to +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"22.5 â'"33.8 â'"45.1 â'"60.5 4 Product Options UTO â'" 509R Model Number Prefix UTOUTMPPA
Agilent Technologies
Original
A1308 transistor 500MH P-222 SN62PRMAB3 5963-3232E 5963-2545E
Abstract: Document Number: AFT26P100â'4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor Nâ'Channel Enhancementâ'Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide , with both sides of the transistor tied together. 5. Each side of device measured separately , Adjacent Channel Power Ratio Input Return Loss PAR 6.8 7.4 â'" dB ACPR â'" â'33.8 Freescale Semiconductor
Original
Abstract: Power LDMOS Transistor Nâ'Channel Enhancementâ'Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide , with both sides of the transistor tied together. 5. Each side of device measured separately , Adjacent Channel Power Ratio Input Return Loss PAR 6.8 7.4 â'" dB ACPR â'" â'33.8 , Capacitors MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor AFT26P100â Freescale Semiconductor
Original
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra , 5.3 .9 â'"3.5 â'"7.5 â'"11.3 â'"15.0 â'"18.7 â'"21.7 â'"24.9 â'"27.9 â'"30.9 â'"33.8 â Renesas Electronics
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A1697

Abstract: transistor A431 BFP92A/BFP92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653 13 579 94 9279 3 2 4 BFP92A Marking: 92V Plastic case , '"42.0 â'"48.3 â'"55.1 â'"59.6 â'"21.1 â'"26.9 â'"23.5 â'"22.0 â'"23.0 â'"24.8 â'"29.1 â'"33.8 â
Vishay Intertechnology
Original
A1697 transistor A431 BFP92AW 88/540/EEC 91/690/EEC D-74025
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , .325 â'"13.3 â'"23.5 â'"30.1 â'"33.8 â'"36.9 â'"38.7 â'"40.2 â'"41.9 â'"43.3 â'"45.1 â Renesas Electronics
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A1489 TRANSISTOR

Abstract: BFP93A/BFP93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 1 13 653 13 579 94 9279 3 2 4 BFP93A Marking: FE Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base , 0.196 0.194 0.185 0.186 0.184 ANG deg â'"17.3 â'"33.8 â'"37.1 â'"38.2 â'"39.0 â'"40.7 â
Vishay Intertechnology
Original
A1489 TRANSISTOR BFP93AW

nec A1441

Abstract: A1441 nec developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , 0.630 0.589 0.565 0.549 0.529 0.511 0.513 0.522 0.512 â'9.3 â'17.6 â'26.5 â'33.8 â
Renesas Electronics
Original
nec A1441 A1441 nec PU10101EJ01V0DS

nec a1232

Abstract: TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD , 0.293 0.281 â'"9.5 â'"16.0 â'"22.5 â'"24.8 â'"26.3 â'"27.5 â'"27.7 â'"29.6 â'"30.9 â'"33.8
Renesas Electronics
Original
nec a1232
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