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transistor a1266

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transistor a1266

Abstract: a1266 transistor EC4H08C Ordering number : ENA1266 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H08C UHF to X Band Low-Noise Amplifier and OSC Applications Features · · , . A1266-1/3 EC4H08C Package Dimensions Electrical Connection (Top view) unit : mm (typ , 2 3 5 Collector-to-Base Voltage, VCB - V 7 10 IT13897 No. A1266-2/3 EC4H08C , . Specifications and information herein are subject to change without notice. PS No. A1266-3/3 SANYO
SANYO Electric
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transistor a1266 a1266 transistor A-1266 24GHz UHF transistor transistor 24 GHz A1266-3/3

A1266

Abstract: transistor a1266 Ordering number : ENA1266 EC4H08C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H08C Features · · · · UHF to X Band Low-Noise Amplifier and OSC Applications , -00001511 No. A1266-1/3 EC4H08C Package Dimensions unit : mm (typ) 7036-002 Polarity mark (Top) Top , Collector Current, IC - mA IT13878 Collector-to-Base Voltage, VCB - V 7 10 IT13897 No. A1266 , to change without notice. PS No. A1266-3/3 SANYO Electric
SANYO Electric
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A1546

Abstract: â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , .150 .170 .190 .215 1.4 â'"2.8 â'"6.1 â'"12.5 â'"17.7 â'"30.6 â'"40.1 â'"64.7 â'"96.1 â'"126.6
Teledyne Cougar
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A1546 PP-38 MIL-HDBK-217E

A1357 transistor

Abstract: a639 transistor +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , '"96.3 â'"104.2 â'"109.5 â'"113.9 â'"117.4 â'"120.8 â'"124.1 â'"126.6 dB 14.377 14.274 14.131
Teledyne Cougar
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A1357 transistor a639 transistor transistor a1042 a1718

transistor a920

Abstract: transistor A915 '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"3.2 â'"13.0 â'"32.5 â'"52.9 â'"72.8 â'"92.0 â'"109.8 â'"126.6 â'"142.2 â'"154.1 â'"175.4 172.3
Agilent Technologies
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transistor a920 transistor A915 A1279 transistor a640 UTM-1053 1000MH 5963-3240E 5963-2510E

A1328

Abstract: transistor A654 Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"59.8 â'"66.2 â'"77.0 â'"98.6 â'"100.7 â'"113.4 â'"126.6 â'"142.1 â'"163.0 â'"173.9 167.6 154.4
Teledyne Cougar
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A1328 transistor A654

transistor A562

Abstract: a562 transistor Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 161.7 160.3 â'"176.3 â'"135.6 â'"126.6 â'"137.8 â'"153.0 â'"169.2 177.7 165.7 S12 dB
Teledyne Cougar
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transistor A562 a562 transistor transistor A144

a1718

Abstract: +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , '"96.3 â'"104.2 â'"109.5 â'"113.9 â'"117.4 â'"120.8 â'"124.1 â'"126.6 S12 dB Ang dB
Agilent Technologies
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500MH 5963-2546E

A7628

Abstract: 8055 transistor Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , '".10 â'".29 â'"1.43 â'"12.66 â'"14.05 â'"12.62 â'"15.46 â'"19.39 â'"19.06 â'"16.44 â'"14.47 â
Agilent Technologies
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A7628 8055 transistor a979 a1137 transistor PPA-4213 P-222 SN62PRMAB3 5963-3232E 5963-4213E
Abstract: Frequency, MHz Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature , '"176.3 â'"135.6 â'"126.6 â'"137.8 â'"153.0 â'"169.2 177.7 165.7 S12 dB Ang dB 14.689 Agilent Technologies
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15VDC 5963-2453E
Abstract: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , '"30.6 â'"40.1 â'"64.7 â'"96.1 â'"126.6 â'"154.6 â'"175.3 169.4 156.1 148.6 140.3 134.9 130.3 Agilent Technologies
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5963-2547E

A4436

Abstract: transistor a684 +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 84.45 13.99 â'"114.50 147.26 â'"3.10 â'"10.88 â'"15.83 â'"12.66 â'"12.84 â'"13.97 â
Agilent Technologies
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A4436 transistor a684 PPA-18222 PP-25 1021R 5963-2591E

nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '65.1 â'69.9 â'75.6 â'81.1 â'86.6 â'93.9 â'103.4 â'111.5 â'118.7 â'126.6 Data Sheet
Renesas Electronics
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nec A1394 PU10104EJ01V0DS

nec A1441

Abstract: A1441 nec developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '52.6 â'77.5 â'95.9 â'112.1 â'126.6 â'138.2 â'148.0 â'158.4 â'169.1 â'176.8 177.7 172.8
Renesas Electronics
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nec A1441 A1441 nec PU10101EJ01V0DS
Abstract: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , '97.6 â'101.2 â'104.2 â'107.6 â'110.4 â'113.8 â'117.0 â'120.2 â'123.3 â'126.6 â Renesas Electronics
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PU10151EJ01V0DS
Abstract: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , '121.8 â'126.6 1.090 0.999 0.925 0.854 0.805 0.776 0.762 0.764 0.752 0.784 7.74 8.74 7.95 Renesas Electronics
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BFG55A

Abstract: IC05 philips characteristics 67 Type designation 71 Rating systems 73 Transistor ratings 75 Letter , BFG198 April 1991 NPN 7 GHz wideband transistor
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OCR Scan
BFG55A IC05 philips SMD MARKING CODE ALg philips discrete a440 a1211 lg LCD01

transistor f6 13003

Abstract: equivalent transistor bj 131-6 power DIODE; variable capacitance TRANSISTOR; low power, audio frequency (Rth j-mb ^ ^ K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency , sensitive TRANSISTOR; power, high frequency (Rth j-mb ^ 15 K/W) PHOTO-COUPLER R A D IA T IO N DETECTOR , ) CONTROL AND SWITCHING DEVICE; e.g. thyristor, low power ( Rt h j-mb > 15 K/W) TRANSISTOR; low power , ) TRANSISTOR; power, switching ( Rt h j-mb 15 K/W) DIODE; m ultiplier, e.g. varactor, step recovery DIODE
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transistor f6 13003 equivalent transistor bj 131-6 BB112 tunnel diode BFQ25 BU705
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