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transistor a 1837

Catalog Datasheet MFG & Type PDF Document Tags

transistor MW 882

Abstract: uhf range fm modulator Philips Semiconductors Semiconductors for Wireless Ä Communications Types added to the range , module N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channei enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS
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transistor a 1837

Abstract: SUD45N05-20L SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic , near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model , . All model parameter values are optimized to provide a best fit to the measured electrical data and , This document is intended as a SPICE modeling guideline and does not constitute a commercial product , 10 V 410 A VGS = 10 V, ID =20 A 0.012 Static Gate Threshold Voltage a On-State
Vishay Siliconix
Original
transistor a 1837 sud*45N05-20L

transistor a 1837

Abstract: Single Supply - Low Cost Surface Mount Plastic Package Description Stanford Microdevices' SN A -386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor M M IC A Darlington , 21dB of gain and +10dBm of P1dB power when biased at 4V and 35mA. This M M IC requires only a single , evaluation boards with S M A connectors are also available (SNA-386CD). HMEHWON« A M IN H L U W T tllS i'N , Vd dV/dT psec dB V mV/degC a. a. 3.5 4.5 46 50 Ohm Gain (S2I) vs. Frequency and
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SNA-386 SNA-386TR SNA-38 SNA-387

transistor a 1837

Abstract: SUD45N05-20L SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic , voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge , optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
Vishay Siliconix
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S-60542R

transistor 43A

Abstract: A 1837 1837 366 pF 154 38 7 nC 10 5.3 10 32 ns 8.4 51 ns Notes: a) Guaranteed , SPICE Device Model SUD45N05-20L N-Channel Enhancement-Mode Transistor, Logic Level , Linear and Switchmode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge , parameter values are optimized to provide a best fit to measured electrical data and are not intended as an exact physical description of a device. The attached SPICE Model describes typical electrical
Vishay Intertechnology
Original
transistor 43A A 1837 DIODE S 43a The subcircuit model was extracted and optimized

transistor 2n 929

Abstract: transistor BF 697 1711 2N 1837 60 100 40* 80* 40* 32 60 80* 100* 45* · 80* 80* 80* 80* 80* 45 45 50* 30* 30* 50* 40* 50 , DIMENSIONS IN INCHES PACKAGE OUTLINES TO-39 TO-72 322 MAX 208MII\ .230 J96MAX ".178MIN 196 «A , MAX .028MINBOTTOM VIEW LEAD-3.COLLECTOR *.005 BOTTOM VIEW For transistor BF 167, 173 in TO , -COLLECTOR 3.EMITTER BOTTOM VIEW .060 BOTTOM VIEW Note;For HF. transistor TO-106 Package 1.Base2.Emitter and 3. Collector TYPICAL DIMENSIONS E Q A B C D Package A DO-7 DO-35 DO-41 DO-34 1.100 1.100 1.100
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transistor 2n 929 transistor BF 697 S3033TM

transistor 2SA 1837

Abstract: ir 1837 TOSHIBA 2SA1837 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications Driver Stage , 2SC4793 A bsolute M axim um Ratings (Ta = 25 C) CHARACTERISTIC C o lle c to r-B a s e V o lta ge C o lle c to r-E m itte r V o lta g e E m itte r-B a se V o lta ge C o lle c to r C u rre n t Base C u rre n t C o lle c to r Pow er D is s ip a tio n Tc = 2 5 °°C J u n c tio n T em p e ra ture S to ra g e , -5 5 - 1 5 0 UNIT V V V A A W lc Ib Ta = 2 5 ~ C pc ooC ~C Tä,g Height : 1.7g
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transistor 2SA 1837 ir 1837

SUD45N05-20L

Abstract: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic , voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge , optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
Vishay Siliconix
Original

VRF154

Abstract: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications , otherwise specified VRF154FL 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C Static Electrical , 4.0 Max Unit V mA A mhos V Thermal Characteristics Symbol RJC Characteristic Junction to Case , dBc 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi
Microsemi
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VRF154 100MH MRF154

1N5362

Abstract: w amplifier 30mhz VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high , Max 5.0 20 5.0 5 Unit Volts mA µA mhos Volts 11-2006 050-4939 Rev A 16 2 Thermal , -1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change , 267300081 .5" bead R1-R2 1kW 1/4W R3 10W 1/4W RF Input 050-4939 Rev A C1, C2, C6, C7 ARCO 465
Microsemi
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1N5362 w amplifier 30mhz

10k trimpot

Abstract: 10k trimpot vertical VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications , Unit V Continuous Drain Current @ TC = 25°C 60 A VGS Gate-Source Voltage ±40 V , Current (VDS = ±20V, VDS = 0V) 4.0 A gfs Forward Transconductance (VDS = 10V, ID = 40A) 16 , Input 050-4939 Rev B 6-2007 C16 C15 L4 L1 Unit dB 1. To MIL-STD-1311 Version A, test
Microsemi
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10k trimpot 10k trimpot vertical thermistor 10k ohm arco mica trimmer mica trimmer MRF154 equivalent

EHP00

Abstract: marking 2P 1837 SIEMENS SXT 2222 A Saturation voltage /¡FE = 10 l e = / (V b e s « , V c e m i , SIEMENS NPN Silicon Switching Transistor · High current gain: 0.1 mA to 500 mA · Low collector-emitter saturation voltage SXT 2222 A Type SXT 2222 A Marking 2P Ordering Code (tape and reel , . Semiconductor Group 1833 SIEMENS SXT 2222 A Electrical Characteristics at 7a = 25 "C, unless , cutoff current V ce = 3 0 V , V be = - 3 DC current gain k = 1 0 0 nA , V ce - 1 0 V lc - 1 m A
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EHP00 marking 2P Q68000-A8330
Abstract: SIEMENS BGA 427 Si-M M IC-Am plifier in SIEGET® 25-Technologie Preliminary data â'¢ Cascadable 50 Q-gain block â'¢ Unconditionally stable â'¢ Gain IS2 1 P = 18,5 dB at 1.8 GHz (appl.1) gain IS2 1 1 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (Vb=3V, /D=9.4mA) â'¢ Noise figure N F = 2.2 dB at 1.8 GHz â'¢ typical device voltage VD = 2 V to 5 V â'¢ Reverse isolation < 35 dB , on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group 1837 â I -
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Q62702-G0067 53SLDS D15SS30 D15S231

2sb1303

Abstract: Silicon Transistor High Voltage Driver Applications · · · · S A N Y O : T P package Adoption of M B IT , Frequency Amp Applications · · · S A N Y O : CP4 package Composite transistor with zener diode on chip v CEO , , !c = ( - ) 3 A ,P C = 1.5W. 1837 SANYO SEMICONDUCTOR CORP 15E D g 7Tì707Li , Amp Applications · · · · · S A N Y O : T 0 3 P C package No insulator required for mounting Large , Complementary Pair Silicon Transistors Motor Driver Applications S A N Y O : PCP package On-chip diode across
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2sb1303 2SB1231 2SB1232 2SB1303 2SB1323 2SB1325 2SB1346

transistor c 3228

Abstract: 2SK2496 TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 0.9dB (f=12GHz) â'¢ High Gain : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C) Marking â¡ 3 ELECTRICAL , 125 °C Storage Temperature Range Tstg -55-125 °C 2.16±0.2 1.0 ±0.1 m 1. GATE 2. SOURCE 3 , CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current ÏGSS VDS = 0, VGS=-2V â'" â'" -20 /uA Drain Current
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transistor c 3228 2SK24 961001EAC2

VRF154

Abstract: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications , otherwise specified VRF154FL 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C Static Electrical , 4.0 Max Unit V mA A mhos V Thermal Characteristics Symbol RJC Characteristic Junction to Case , dBc 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi
Microsemi
Original

transistor c 3228

Abstract: transistor a 1837 TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 0.9dB (f=12GHz) â'¢ High Gain : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C) Marking â¡ 3 ELECTRICAL , 125 °C Storage Temperature Range Tstg -55-125 °C 2.16±0.2 1.0 ±0.1 m 1. GATE 2. SOURCE 3 , CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current tGSS VDS = 0, VGS=-2V â'" â'" -20 /J.K Drain Current
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S2V 97

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 , 0 V d S = 2V> Id = !00^A VdS = 2V, I d = 15mA, f= lkH z \ T T ~ in - r>\T SYMBOL CHARACTERISTIC , .8 - 2 80 - - - n Q i o - UNIT //A mA V mS «-1 Vi T3 ' JJOVdS = 2V, MJ - I d = , utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property
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S2V 97

BFR134

Abstract: 2322 712 specification BFR134 5bE » VllOflPb 0DHSÃD1 HIPHIN DESCRIPTION NPN transistor in a plastic SOT37 envelope , wideband transistor BFR134 philips international 5be ]> , â  7110fl2b 004SfiQa OTT HPHIN LIMITING , Product specification NPN 7 GHz wideband transistor BFR134 PHILIPS INTERNATIONAL SbE ]> â  7110fl2b , specification T-33-05 NPN 7 GHz wideband transistor BFR134 PHILIPS INTERNATIONAL SbE D â  711Dfl5b â , wideband transistor BFR134 PHILIPS INTERNATIONAL SbE » â  711Dfl2b D045fllD 175 â PHIN Table 1 Common
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2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372

BFR134

Abstract: 2322-712 transistor £ BFR134 N APIER PHILIPS/DISCRETE blZ D - DESCRIPTION PINNING NPN transistor in a plastic , (Issue 4), 1986 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors â  b b 5 3 T 31 D031113 5 T 3 â  A P X Product specification NPN 7 GHz wideband transistor BFR134 - N , transistor BFR134 - N A PIER PHILIPS/DISCRETE b^E D CHARACTERISTICS Tj = 25 °C unless otherwise specified , HIAPX Product specification NPN 7 GHz wideband transistor BFR134 â - N AUER PHILIPS/DISCRETE b^E D
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tag c2 680 800 2322 712 philips transistor A 1264 B 1449 transistor philips resistor 2322 710 2222 379 MBBS16 800MH
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