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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor TIP 31A

Catalog Datasheet MFG & Type PDF Document Tags

transistor TIP 31A

Abstract: transistor tip 31c TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Linear Switching Applications - Complement , Cycle2% SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) Typical Characteristics , ,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) Package Dimension TO-220 (B) ±0.20 84 , Millimeters SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) Package Dimension Semihow
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TIP31

Abstract: TIP 31A C ollecto r Base Voltage Sym bol 100 V TIP31 VcBO TIP31 40 V 60 V TIP31B 80 V TIP31C 100 V VcEO TIP 31A Em itter-Base Voltage V ebo , TIP31 SERIES (TIP31/31 A/31 B/31C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS â'¢ C om plem ent to TIP 32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS Characteristic , Max Unit 40 V TIP31A 60 V TIP31B 80 V TIP31C 100 TIP31/31A C
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TIP31/31A TIP31B/31C

transistor tip 31c

Abstract: transistor TIP 31A TIP31 SERIRES (TIP31/31A/31B/31C) NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS · Complement to TIP32/32A/32B/32C T O -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic , TIP 31/31A TIP31B /31C TIP31 TIP31A TIP31B TIP31C ^ = 2 5 °c> Symbol B V ceo Test Condition , * Pulse Test: PW
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transistor tip 31c transistor TIP 31A TIP31 NPN Transistor TRANSISTOR TIP31 transistor tip 32C TIP 31a Transistor TIP31/31A/31B/31C 31/31A

npn, transistor, sc 107 b

Abstract: transistor TIP 31A | 1,31,7554 a o a S S lT 0 | TIP31, TIP 31A , TIP31B, TIP31C, NPN, TIP 32, TIP 32A , TIP32B , | t>3b?aS4 0085551 T | TIP31, TIP 31A , TIP31B, TIP31C, NPN, TIP 32, TIP 32A , TIP32B, TIP32C , Ade Collector-Emitter Sustaining Voltage - v CEO(sus) = = = = · · · 4 0 Vdc (M 'n) ~ TIP 31, TIP 32 6 0 Vdc (Min) - T IP 31 A , TIP 32A 80 Vdc (Min) - TIP31B , TIP32B 100 Vdc (Min) -T IP 3 1 C ,T IP 3 2 , , NPN, TIP 32, TIP32A, TIP32B, TIP32C, PNP T -33-11 FIGURE 4 - TH E R M A L RESPONSE 2.0 5 0
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npn, transistor, sc 107 b TIP 133 transistor TIP32 NPN Transistor 31076 tip 31A T1P31B TIP32 40-60-80-1QO

TIP32

Abstract: transistor tip 32C TIP 32 series (TIP32/32A/32B/32C) TIP32/32A/32B/32C SEMIHOW REV.A0,Oct 2007 TIP 32 , to TIP31/31A/31B/31C Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Ta , 150 -65~150 V A A A W W PNP Epitaxial Silicon Darlington Transistor TO-220 1. Base , * Pulse Test: PW300us, Duty Cycle2% SEMIHOW REV.A0,Oct 2007 TIP 32 series (TIP32/32A/32B/32C , Millimeters SEMIHOW REV.A0,Oct 2007 TIP 32 series (TIP32/32A/32B/32C) Package Dimension TO-220 (B
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TIP32 applications Tip 32 TIP 32 transistor transistor 31C TIP 32c transistor darlington tip31 TIP32/32A TIP32B/32C PW300

tip318

Abstract: tip318 transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP 31A Com plem entary Silicon Plastic Power TVansistors , Storage Junction Temperature Range Symbol VCEO VCB VEB ic Iß pd NPN TIP 31B * T IP 31C * PNP , . REV 1 Motorola Bipolar Power Transistor Device Data 3-873 TIP31A TIP31B TIP31C TIP32A TIP32B , Transistor Device Data TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C Q Ç ' 0.01 0.02 0.05 , power handling ability of a transistor: average Junction temperature and second break down. Safe
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tip318 tip318 transistor tip31C-tip32C equivalent transistor tip31c data tip318 transistor tip 31a equivalent TIP318
Abstract: TIP32 SERIES (TIP32/32A/32B/32C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS â'¢ C om plem ent to TIP 31/31A/31B/31C ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage Sym bol : TIP32 Rating Unit -40 V -60 V : TIP32B -80 V : TIP32C -100 V -40 V : TIP32A -60 V : TIP32B -80 V , EPITAXIAL SILICON TRANSISTOR BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE hFE -
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31/31A/31B/31C TIP32B/32

tip 31c

Abstract: til 31a Collector-Emitter TE S T C O N D IT IO N S TIP31 M IN MAX T IP 31A M IN MAX TIP31B M IN MAX TIP 31C M IN MAX U N IT , based on th e c a p a b ility o f th e transistor to o perate safely in th e c irc u it o f Figure 2 . L , values show n are n om inal; exact values vary slightly w ith transistor param eters. 1 270 5.328
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tip 31c til 31a texas instruments tip32 texas instruments tip31
Abstract: condition OV. Sync tip clamp condition 5V. Center bias condition Center biased to approx , m Transistor used PIMP : 2SA1175 m Delay time « 1 90nsec â'ž I Transistor used , -A JEDEC CODE M O - O O à - A H » EIAà * (Similar) â'" 9 â'" Ã3Ã23Ã3 D017QMS 31Ã" -
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CXL5505M/P CXL5505M CXL5505P G17D43 IP-14P-01

ISL9003A

Abstract: ISL9003AIEFZ-T current of 31A (typical), and 0.5A shutdown current, the ISL9003A is an ideal choice for portable , quiescent current: 31A · Low dropout voltage: typically 200mV @ 150mA · Low output noise: typically 20VRMS , high-gain operational amplifier driving a PMOS pass transistor. The design of the ISL9003A provides a , .2 November 6, 2007 ISL9003A Small Outline Transistor Plastic Packages (SC70-5) P5.049 D VIEW C e1 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE INCHES 5 SYMBOL 4 MIN
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ISL9003AIEFZ-T ISL9003AIEHZ-T ISL9003AIEJZ-T ISL9003AIEKZ-T ISL9003AIEMZ-T ISL9003AIENZ-T FN6299 SC-70 MO-229 TB389 ISO9000

transistor TIP 31A

Abstract: ISL9003A quiescent current of 31A (typical), and 0.5A shutdown current, the ISL9003A is an ideal choice for portable , quiescent current: 31A · Low dropout voltage: typically 200mV @ 150mA · Low output noise: typically 20VRMS , PMOS pass transistor. The design of the ISL9003A provides a regulator that has low quiescent current , 1.25 LAND PATTERN 10 6 FN6299.1 December 21, 2006 ISL9003A Small Outline Transistor Plastic Packages (SC70-5) P5.049 D VIEW C e1 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE
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MO-203AA

transistor 551 x17

Abstract: transistor tt 2078 NEC Silicon Transistor 2SD471 NPNX £ ^ vTJ^m NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier 02SB564Ì n >7°'J pf > ? , 1 ^(ìf)H ft «i m 7t te aT 1 3 ft 5 ^(^Si^pt:'^) -i fò^-T g 5 ft 3 6 ° -tip t IV) ÌS 'Jt e» Tfi , - 4 4 5 5( it ) X720 ma fs dj (0849)31â  - 5 0 6 3 X690 â Â«a il (0852)24- -4115 X745 f»s tÃ
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transistor 551 x17 transistor tt 2078 Transistor iaw 91 2SD471 K lm 348 audio SCI 0542 TC-5253 MAY-15-79M 121-SJ

IR2128 application notes

Abstract: PD65003 power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to , -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2127C , . www.irf.com 5 IR2127C/IR2128C/IR21271C Device Information Process & Design Rule Transistor Count Die , 25 Temperature ( o C) VBIAS Supply Voltage (V) Figure 31A Output Source Current vs , handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used. Wafer/Die
International Rectifier
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PD65003 IR2128 application notes IR2127/IR2128 IR21271 IR2127/IR21271 IR2128

bc557

Abstract: 2N3645 87â'™ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY , condenser microphone T IP 31A NPN 60 60 5 3 40W 150 Genera -purpose AM P , 40W 150 General-purpose AM P/switchinq TIP 41A NPN 60 60 5 6A 65W 150 , /switching TIP41C NPN 100 100 5 6A 65W 150 General-purpose AM P/switching TIP
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bc557 2N3645 BC307 MJE2955 BC212

LZL -60-C

Abstract: transistor tip 122 show pin diagram 9 C * 0 # D Hook Switch /-7 Keypad M PU IH^l o Tip Ring This document contains , . MC34010 2-416 b3b7253 00^53^5 31â"¢ MOTOROLA MAXIMUM RATINGS (Voltage References to V-) Parameter , signal currents (¡TXO anc' ¡rxo' "ow through the voltage regulator pass transistor (T1) to drive the , the DTMF output signal level at Tip and Ring. 38 35 FB FeedBack terminal for DTMF output. Capacitor C14 connected from FB to V+ provides ac feedback to reduce the output impedance to Tip and Ring when
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RS-470 LZL -60-C transistor tip 122 show pin diagram keypad and dtmf ic power 22D regulator MC6821 PIA circuit diagram regulator avr for generator MDA101A 4-1N4005 2N4126 1N5931A 1N5936A

apm 4030

Abstract: backlit 31â" 2-digit LCD displays forward and reflected power in either watts or dBm, VSWR, return loss , , CW. An improved power system using two internal, 9-Volt alkaline, transistor batteries enhances , — 10 â'"4 min. Battery: Two 9-Volt alkaline transistor batteries Battery Life: 20 hours of operation , × 51â"8" W × 41â"4" D, (161 mm × 131 mm × 108 mm ) Weight: 31â" 4 lbs. (1.5 kg) Elements , connectors) 67â"8" H × 51â" 8" W × 35â"8" D, (175 mm × 130 mm × 92 mm) Weight: 31â" 2 lbs. (1.6 kg
Bird Technologies
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apm 4030

IR2125 APPLICATION NOTE

Abstract: transistor tip 33B Undervoltage lockout Current detection and limiting loop to limit driven power transistor current Error lead , protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage , held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 , Figure 31A. ERR Timing Charge Current vs. Temperature 16 18 20 Figure 31B. ERR Timing Charge
International Rectifier
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IR2125 IR2125 APPLICATION NOTE transistor tip 33B IR2125S PD60017-P MS-001AB MS-013AA

IR2125

Abstract: IR2125 APPLICATION NOTE Undervoltage lockout Current detection and limiting loop to limit driven power transistor current Error lead , protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage , -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2125 , (V) Figure 31A. ERR Timing Charge Current vs. Temperature ERR Pull-Up Current (mA) 25
International Rectifier
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PD60017-M MS-012AA N-Channel mosfet 600v 20A IR2125(S) equivalent 5M-1994

IR2125 APPLICATION NOTE

Abstract: IR2125SPBF 18V Undervoltage lockout Current detection and limiting loop to limit driven power transistor , power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external , Design Tip DT97-3 for more details). 2 www.irf.com IR2125(S) & (PbF) Dynamic Electrical , . 100 Min. 50 0 -50 -25 0 25 50 75 100 125 10 12 Figure 31A. ERR
International Rectifier
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IIR2125 IR2125SPBF IR2125PBF 2A 500V MOSFET PD60017 IR2125P IR2125SP

IR2125 APPLICATION NOTE

Abstract: ir2125 and limiting loop to limit driven power transistor current Error lead indicates fault conditions and , circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by , held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). 2 , Voltage (V) Figure 31A. ERR Timing Charge Current vs. Temperature 25.0 Figure 31B. ERR Timing
International Rectifier
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