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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor SOT23 J8

Catalog Datasheet MFG & Type PDF Document Tags

transistor SOT23 J8

Abstract: transistor S9018 =200mW) APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23 Type No. Marking S9018 Package Code J8 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES , Electrical Production specification Silicon Epitaxial Planar Transistor S9018 TYPICAL , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018
BL Galaxy Electrical
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transistor SOT23 J8 transistor S9018 S9018 SOT-23 J8 SOT23 S9018 J8 S9018 SOT23 400MH BL/SSSTC085 3000/T

J8 SOT23

Abstract: transistor SOT23 J6 ,-J8, J13, J14, J16 Jumper L1 22uH Q1 NPN Transistor SOT-23 200 mA, 40V Q5 NSC , FLT J6 FLT FLT PWM J7 PWM PWM PWM J8 PWM PWM PWM J13 PWMQ6 PWM J14 , "IQ , OVP1.24V LED7 OVPOVP 1.24VOVP 7 PWM J7 J8 Q6 J13 J14 Q7, Q1, E3, R23, C10, Z2 MOSFET 8 8 PWM 4 OVP J7 J8 Q6
National Semiconductor
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transistor SOT23 J6 RC1206JR-072RL j6 sot23 sud40n10-25-e3 MMBT3904LT1G resistor 2512 LM3423 LM3423NFET LM342335V C17C4 Q935V R11R12

GRM32ER61C106K

Abstract: C135-C138 SCHOTTKY BARRIER Page 1 - of - 6 CASE-D DIODES INC. BAT54-7 SOT-23 DIODES INC. BAT54A-7 SOT-23 DIODES INC. MMBZ5231B SOT-23 CENTRAL SEMI., CMDSH-3-LTC SOD-323 DIODES INC. B320A -13 SMA Bill Of , SI7856DP S08 OPT. TRANSISTOR NPN TRANSISTOR PNP POT., SMT 20K POT., SMT 50K RES., CHIP 0.002 1W 1% ZETEX FMMT619 TA SOT23 ZETEX FMMT718 TA SOT23 BOURNS 3313J-1-203E BOURNS 3313J-1-503E , U7 (5 Tubes) VR1 VR2 U9 U10 U11 FOR MTGS AT 4 CORNERS FOR MTGS AT 4 CORNERS J1,J2,J3,J5,J8
Linear Technology
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TLC555CD GRM32ER61C106K C135-C138 R62-R67 c86 msop-8 transistor c114 chip 06035A470JAT1A 12-PHASE LTC3731 LTC3731CUH DC561A-A DC561A-B DC561A

SMD TRANSISTOR j8

Abstract: transistor SMD J9 NPN Switching Transistor SOT23 Q3-4 2 FMMT717 PNP Switching Transistor SOT23 Q1-2 2 , from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of
Wolfson Microelectronics
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WM8762-EV1B WM8762-EV1M SMD TRANSISTOR j8 transistor SMD J9 transistor smd j6 j13 SMD Transistor smd transistor J6 transistor SMD wm WM8762 M8727

MARKING CODE j8

Abstract: transistor SOT23 J8 junction temperature range: -55OC to +150 OC Marking Code: J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter , Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9018 Features · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts(Tamb , .070 .018 .0005 .035 .003 .015 Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) MAX
Shanghai Lunsure Electronic
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MARKING CODE j8 sot-23 MARKING CODE 21

transistor SOT23 J8

Abstract: MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9018 SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D Electrical , ) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Min 25 18 4.0 -Max -0.1 0.1 0.1 Units Vdc
Micro Commercial Components
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MARKING CODE j8

Abstract: transistor SOT23 J8 MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9018 Features · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D , .015 Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) MAX .120 .098 .055 .041 .081
Micro Commercial Components
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transistor SOT23 J8

Abstract: AV9018LT1 @vic SOT-23 Plastic-Encapsulate Transistors AV9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55 to , DEVICE MARKING VCE=5V, IC= 5mA f=400MHz 70 600 190 MHz S9018LT1= J8 Copyright
Avic Electronics
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transistor j8 npn sot-23

transistor SOT23 J8

Abstract: SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25â"ƒ) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55â"ƒ , DEVICE MARKING S9018LT1= J8 VCE=5V, IC= 5mA f=400MHz 70 600 190 MHz Bytes
Bytes
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transistor SOT23 J8

Abstract: transistor j8 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 , 1.4 V fT Transition frequency DEVICE MARKING S9018LT1= J8 VCE=5V, IC= 5mA f
Jiangsu Changjiang Electronics Technology
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Abstract: storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability , MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9018 Features · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Min 25 18 4.0 -Max -0.1 0.1 Micro Commercial Components
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transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 4 FERRANTI semiconductors ® PNP Silicon Planar High Voltage Transistor BSS63 DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS64. Encapsulated in the popular SOT-23 , industrial and commercial applications. The Ferranti SOT-23 package is formed by transfer moulding a SILICONE , . SOT-23 Actual size in inset ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector Base
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OCR Scan
transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 sot-23 MARKING CODE G1 m6 marking transistor sot-23 D6 TRANSISTOR MARKING 100MA BFQ31 BCV72 BFQ31A BCW29 BFS20

m6 marking transistor sot-23

Abstract: C5 MARKING TRANSISTOR HT3 PNP Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT2 Encapsulated in the popular SOT-23 package the device is designed , Ferranti SOT-23 package is formed by transfer moulding a SILICONE plastic specially selected to provide a , * SOT-23 Actual size in inset HT3 CHARACTERISTICS (at 25°C ambient temperature unless otherwise
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OCR Scan
C5 MARKING TRANSISTOR transistor ad 1v TRANSISTOR a43 ht3 SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 BCW30 BCW31 BCW32 BSS65 BCW33

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is designed , Ferranti SOT-23 package is formed by transfer moulding a SILICONE plastic specially selected to provide a , ® SOT-23 Actual size in inset HT2 CHARACTERISTICS (at 25°C ambient temperature unless otherwise
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OCR Scan
sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 l6 MARKING NT SOT23 sot-23 marking LC marking of m7 diodes BSS66 BCW60A BSS67 BCW60B BSS69 BCW60C
Abstract: NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · · · C B Electrical Characteristics , MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9018-L MMS9018-H Features · · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable , Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , ) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0 - Max Micro Commercial Components
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Abstract: -0 flammability rating Moisure Sensitivity Level 1 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D · , MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9018-L MMS9018-H Features · · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable , Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) Rank Range L 70~105 Min 25 18 4.0 Micro Commercial Components
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"Zener Diode 0805"

Abstract: LM3423 , J16 Jumper L1 22uH Q1 NPN Transistor SOT-23 200 mA, 40V Q5 NSC Vishay , : Enables high-side PWM dimming. CLOSED: Disables high-side PWM dimming. J8 PWM Dimming OPEN , amplifier's output transistor pulls current through R7 (RHSP) until VHSP = VHSN and this happens when the , boosted output voltage goes J7 Open Jumper above a maximum value. J8 Close Jumper The OVP threshold , , causing the voltage at the OVP pin to fall. Jumper Operation J7 Close Jumper J8 Open Jumper
National Semiconductor
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zener diode 0805 high voltage resistor SUD40N10-25 TP10 AN-1872
Abstract: Moisure Sensitivity Level 1 â'¢ â'¢ NPN Silicon Plastic-Encapsulate Transistor SOT-23 A D C , â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts , storage junction temperature range: -55OC to +150 OC Marking : J8 Lead Free Finish/RoHS Compliant ("P" , ) Base-Emitter Saturation Voltage (IC=100mAdc, IB =1.0mAdc) E H G Transistor Frequency (IC Micro Commercial Components
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marking J8

Abstract: BF600 % !"# MMS9018 Features · · · · · · SOT-23 Plastic-Encapsulate Transistors Capable , Operating and storage junction temperature range: -55OC to +150 OC Marking : J8 NPN Silicon Plastic-Encapsulate Transistor Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 SOT-23 A D C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol , ) E H G Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) J K DIMENSIONS
Micro Commercial Components
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marking J8 BF600

RC1206JR-072RL

Abstract: digital p channel mosfet sot-23 fairchild , J16 Jumper L1 22uH Q1 NPN Transistor SOT-23 200 mA, 40V Q5 NSC Vishay , : Enables high-side PWM dimming. CLOSED: Disables high-side PWM dimming. J8 PWM Dimming OPEN , amplifier's output transistor pulls current through R7 (RHSP) until VHSP = VHSN and this happens when the , boosted output voltage goes J7 Open Jumper above a maximum value. J8 Close Jumper The OVP threshold , , causing the voltage at the OVP pin to fall. Jumper Operation J7 Close Jumper J8 Open Jumper
National Semiconductor
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digital p channel mosfet sot-23 fairchild ERJL12KF10CU 22-28-4023 LM3423MH Initio 174-K
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