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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor R1d

Catalog Datasheet MFG & Type PDF Document Tags

R22A

Abstract: transistor MTBF Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or , ,R4,R5,R6,R18, 8 R18A 4 R1A,R1B,R1C,R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 , Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener 6.1 Voltage Regulator 6.4 Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or glaze 9.2 , R1A,R1B,R1C,R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 C8,C10,CX1 1 C16 1 C2 1
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transistor R1d

Abstract: TRANSISTOR 106 d1 Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or , ,R4,R5,R6,R18, 8 R18A 4 R1A,R1B,R1C,R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 , Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener 6.1 Voltage Regulator 6.4 Transistor NPN 6.4 Transistor MOSFET 6.11 Optocupler 6.11 Light Emitting Diode 9.2 Resistor film or glaze 9.2 , R1A,R1B,R1C,R1D 1 Z1 1 VR1 C1,C3,C5,C6,C7,C11,C17, 10 CY1,CY2,CY3 3 C8,C10,CX1 1 C16 1 C2 1
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transistor R1d

Abstract: r1c diode VIN R1C + VZ - D1C IZ C1C Option C VIN Q1 VPWR R1D + VZ - IQ , bipolar transistor. This circuit reduces the current through the resistor from IZ + IQmax to IZ + IQmax/ hFE, where hFE is the bipolar transistor's current gain. Also, the bipolar transistor's current gain , is the NPN transistor's maximum base-emitter voltage at IQmax, typically near 0.7 V. Following the same recommendation in Option C, Equation 2 shows how to compute R1D with VZmax 0.9*VINmax. - VZmax
Texas Instruments
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pm2301as

Abstract: PM2301 integrated power Fieldeffect Transistor (FET) Constant Current Constant Voltage (CCCV mode) Flexible charge , . 1/1424-LZN 901 4441 Uen Rev D 2012-07-10 LZN 901 4441 R1D © Copyright ST-Ericsson 2011 , Rev D 2012-07-10 LZN 901 4441 R1D 2 (72) © Copyright ST-Ericsson 2011, 2012. All rights , Uen Rev D 2012-07-10 LZN 901 4441 R1D 3 (72) © Copyright ST-Ericsson 2011, 2012. All , indicator 34 35 35 1/1424-LZN 901 4441 Uen Rev D 2012-07-10 LZN 901 4441 R1D 4 (72
ST-Ericsson
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PM2301 PM2301AST pm2301as abstract for overvoltage and overcurrent monitor PM2301AHT marking R1d JISC8714 YDT1591 PM2301AH PM2301AQT PM2301AQ

PKB 4610 PIP

Abstract: with rubbing EN/LZT 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 PKB 4610 PINB , 36-75Vdc Cin CD3 CD2 CY3 PKB Module - CY1 EN/LZT 108 6067 R1D ©Ericsson Inc., Power , 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 PKB 4610 PINB Output Characteristic , TA = +25oC, IO = 20A, Vin = 53V EN/LZT 108 6067 R1D ©Ericsson Inc., Power Modules , November 2002 , /off is referenced to the primary side. A mechanical switch or an open collector transistor or FET
Ericsson
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PKB 4610 PIP
Abstract: ERICSSON ^ PTB 20134 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , Specifications subject to change without notice. © Ericsson Components AB 1995 R1D May 1998 7-22 -
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transistor A 935

Abstract: t 935 ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to , R1D April 1998
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transistor A 935 t 935 NE50

lc 945 transistor

Abstract: transistor LC 945 ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , Components AB 1995 R1D April 1998
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lc 945 transistor transistor LC 945 TRANSISTOR 955 E 35 W 960 MHz RF POWER TRANSISTOR NPN 965 transistor

1501 ic

Abstract: RF Transistor 1500 MHZ ERICSSON ^ PTB 20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor Description T he 20046 is a c la ss A B , N PN , com m on emitter R F power transistor intended for 26 V d c operation from 1465 to 1501 M H z. Rated at 1 watt minimum output power, it m ay be used for both C W and P E P applications. Ion implantation, nitride surface passivation and gold m etallization are used to ensure , without notice. © Ericsson Components A B 1994 R1D April 1998 8-16
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1501 ic RF Transistor 1500 MHZ

IEC-68-2-54

Abstract: transistor rf a 5.8 ghz a 30 watts ERICSSON ^ PTB 20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , . © Ericsson Components AB 1995 R1D April 1998 9-4
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IEC-68-2-54 transistor rf a 5.8 ghz a 30 watts
Abstract: ERICSSON ^ PTB 20141 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPIM, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent , without notice. © Ericsson Components AB 1995 R1D April 1998 -
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202279m

Abstract: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NIPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used for both C W and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent , without notice. © 1996 Ericsson Inc. R1D May 1998 9-10
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202279m

r1c diode

Abstract: Zener Diodes with small tolerances manufacturer R1 and R2 from their calculated values given by, R1C RD = R1 + R2 C C ( R1D - R2D , providing. Figure 4 shows how this can be done using a transistor Q1 to provide current amplification , a SOT23 transistor with a VCEO rating of -60V, an IC of -1A and can dissipate up to 350mW when , ( R1D - R 2 D ) + R1 + R 2 C C R1P R1P R1P R 2 P R 2 P - , ( R1D - R 2D ) + R1 + R 2 C C C C R1P R 2 P R1 + R 2 C C Equation 12
Zetex Semiconductors
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r1c diode Zener Diodes with small tolerances manufacturer R2C Zener r1p 11 TRANSISTOR h a 431 transistor precision shunt regulator 431 D-81541 TX75248

Ericsson B

Abstract: ERICSSON $ PTB 20006 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, com m on em itter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 w atts minimum output power, it m ay be used for both C W and PEP applications. Ion im plantation, nitride surface passivation and gold m etallization are used , Telephone: 408-778-9434 Specifications subject to change without notice. © Ericsson Components AB 1994 R1D
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Ericsson B 860MH

transistor R1d

Abstract: ERICSSON ^ PTB 20004 50 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to , notice. © Ericsson Components A B 1994 R1D March 1998
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transistor R1d
Abstract: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to , 5 -9 Specifications subject to change without notice. O Ericsson Components AB 1995 R1D May 1998 -
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Abstract: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , Telephone: 408-778-9434 Specifications subject to change without notice. © Ericsson Components AB 1995 R1D -
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470-860 mhz Power 5 w

Abstract: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is , without notice. © 1996 Ericsson Inc. R1D May 1998 6-12
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470-860 mhz Power 5 w

transistor R1d

Abstract: ericsson 20144 ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device , Telephone: 408-778-9434 Specifications subject to change without notice. © Ericsson Components AB 1995 R1D
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ericsson 20144
Abstract: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, com m on em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 W atts minim um output power, it may be used for both CW and PEP applications. Ion im plantation, nitride surface passivation and gold metallization are used to , : 408-778-9434 Specifications subject to change without notice. © Ericsson Components AB 1994 R1D April 1998 -
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