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transistor P1

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Abstract: P1 Page 1 of 7 February, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor , WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A T0600TB45A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , Prospective Data Sheet T0600TB45A T0600TB45A Issue P1 Page 2 of 7 February, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0600TB45A T0600TB45A Curves Figure 1 – Typical collector-emitter ... Westcode Semiconductors
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transistor P1 TEXT
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Abstract: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A T1200TB25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , Issue P1 Page 1 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200TB25A T1200TB25A Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST , diode Prospective Data Sheet T1200TB25A T1200TB25A Issue P1 Page 2 of 7 January, 2011 WESTCODE An IXYS ... Westcode Semiconductors
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transistor 7830 TEXT
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Abstract: P1 Page 1 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor , WESTCODE An Date:- 18 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G T0570VB25G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , diode Prospective Data Sheet T0570VB25G T0570VB25G Issue P1 Page 2 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G T0570VB25G Curves Figure 1 – Typical ... Westcode Semiconductors
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386.2 Kb

TEXT
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Abstract: P1 Page 1 of 7 January, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type , WE STCO DE An Date:- 18 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G T0570VB25G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , freewheeling diode Prospective Data Sheet T0570VB25G T0570VB25G Issue P1 Page 2 of 7 January, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G T0570VB25G Curves Figure 1 – Typical ... Westcode Semiconductors
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TEXT
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Abstract: Issue P1 Page 1 of 7 January, 2011 An IXYS Company Insulated Gate Bi-polar Transistor , WE STCO DE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A T1200TB25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , freewheeling diode Prospective Data Sheet T1200TB25A T1200TB25A Issue P1 Page 2 of 7 January, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type T1200TB25A T1200TB25A Curves Figure 1 – Typical ... Westcode Semiconductors
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TEXT
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Abstract: WE STCO DE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A T0360NB25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Prospective Data Sheet T0360NB25A T0360NB25A Issue P1 Page 1 of 7 August, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A T0360NB25A , T0360NB25A T0360NB25A Issue P1 Page 2 of 7 August, 2011 An IXYS Company Insulated Gate Bi-polar ... Westcode Semiconductors
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TEXT
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Abstract: P1 Page 1 of 7 February, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type , WE STCO DE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A T0600TB45A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , Prospective Data Sheet T0600TB45A T0600TB45A Issue P1 Page 2 of 7 February, 2011 An IXYS Company Insulated Gate Bi-polar Transistor Type T0600TB45A T0600TB45A Curves Figure 1 – Typical collector-emitter saturation ... Westcode Semiconductors
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334.34 Kb

TEXT
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Abstract: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A T0360NB25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Prospective Data Sheet T0360NB25A T0360NB25A Issue P1 Page 1 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type , Issue P1 Page 2 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar ... Westcode Semiconductors
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375.14 Kb

T0360 T0360NB25A T0360NB TEXT
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Abstract: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New , of transistor drawn current. We will use the CGH40025F CGH40025F transistor in a 2 to 6 GHz broadband amplifier and demonstrate how the transistor operating temperature can be minimized during the simulation , DCVS ID=V1 V=1.61 V RES ID=R1 R=25 Ohm PORT P=1 Z=50 Ohm PIPAD ID=P1 Z1=50 Ohm Z2 , PORT_PS1 P=1 Z=50 Ohm PStart=9 dBm PStop=39 dBm PStep=1 dB TLIN ID=TL5 Z0=60.01 Ohm EL=19.66 Deg ... Cree
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5 pages,
307.27 Kb

C2358 Hemt transistor Cree Microwave microwave office MR 1261 Gan hemt transistor CGH40025 research paper on voltmeter CGH40 C3909 CGH40025F ID4002 Gan hemt transistor x band transistor DB p16 Voltmeter pt 2358 transistor c3909 TEXT
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Abstract: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G T0800EB45G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , inductance 150nH. 4) Half-sinewave, 125°C Tj initial. Prospective Data Sheet T0800EB45G T0800EB45G Issue P1 Page 1 of 6 December, 2010 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type , UNITS - Prospective Data Sheet T0800EB45G T0800EB45G Issue P1 Page 2 of 6 V Current range 267-800A ... Westcode Semiconductors
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6 pages,
239.99 Kb

transistor P1 P 12 T0800EB45G T0800 MAR 208 transistor 2008AN01 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT DEVICE FEATURES AND fig. 2) I F(AV) = 1.5A d = 0.5 Tlead= 725C 2.5 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 675C 2.8 W THERMAL AND POWER DATA Symbol Parameter Test Conditions Min Typ Max < 2% STTA206S STTA206S 2/8 TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode OFF : P3 Watts ON : P4 Watts (Fig. 3 & 4) CONDUCTION LOSSES in the diode P1 Watts (Fig. 2
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3752.htm
STMicroelectronics 20/10/2000 11.6 Kb HTM 3752.htm
diode P1 Watts (Fig. 2) SWITCHING LOSSES in the transistor due to the diode P2 Watts (Fig. 3 POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 675C 2.8 W THERMAL AND POWER DATA Symbol , duty cycle < 2% STTA206S STTA206S 2/8 TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts both the diode and the companion transistor, thus optimizing the overall performance in the end
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3752-v3.htm
STMicroelectronics 25/05/2000 10.87 Kb HTM 3752-v3.htm
ST | RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Application Note RF POWER TRANSISTOR BALLASTING RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Anthony T. Harris the main beam of the SSR antenna. P1 P2 P3 Transmit Receive # 1 Receive # 2 P1 > P2 = REPL Y P2 > P1 = IGNORE AIRCRAFT # 1 AIRCRAFT # 2 P1 , P3 P2 Notched Main Beam Secondary surveillance radars
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6967.htm
STMicroelectronics 20/10/2000 24.21 Kb HTM 6967.htm
ST | RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Application Note RF POWER TRANSISTOR AN1225 AN1225 APPLICATION NOTE RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS antenna. P1 P2 P3 Transmit Receive # 1 Receive # 2 P1 > P2 = REPL Y P2 > P1 = IGNORE AIRCRAFT # 1 AIRCRAFT # 2 P1 , P3 P2 Notched Main Beam Secondary surveillance radars operate in
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6967-v1.htm
STMicroelectronics 25/07/2000 23.82 Kb HTM 6967-v1.htm
COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : ISOTOP Electrical insulation 645C 108 W ISOTOP Tc= 585C P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 equation : P = V to x I F(AV) + rd x I F 2 (RMS) STTA12006TV1/2 STTA12006TV1/2 / STTA6006P STTA6006P 2/8 P1(W) 0 5 10 15 / STTA6006P STTA6006P 4/8 Fig. A : "FREEWHEEL" MODE. TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 diode and the companion transistor, thus optimizing the overall performance in the end application.
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6074-v3.htm
STMicroelectronics 25/05/2000 11.39 Kb HTM 6074-v3.htm
AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR Tc= 965C Tc= 745C 36 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 equation : P = V to x I F(AV) + rd x I F 2 (RMS) STTA2006P/PI STTA2006P/PI 2/8 P1(W) 0 2 4 6 8 10 12 14 16 MODE. TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the transistor, thus optimizing the overall performance in the end application. The way of calculating the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3170-v3.htm
STMicroelectronics 25/05/2000 11.04 Kb HTM 3170-v3.htm
COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very high 1.4 W I F(AV) = 0.8A d = 0.5 Tlead= 605C F126 1.4 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 905C SMB 1.5 W Tlead= 605C F126 1.5 W THERMAL AND POWER DATA Symbol Parameter 1.0 1.2 1.4 1.6 1.8 IF(av) (A) P1(W) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 Fig. 1 : Conduction losses versus reverse volt - age applied (typical values). STTA106/U STTA106/U 4/9 SWITCHING LOSSES in the transistor due
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3750-v1.htm
STMicroelectronics 02/04/1999 8.9 Kb HTM 3750-v1.htm
OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND 1.4 W I F(AV) = 0.8A d = 0.5 Tlead= 605C F126 1.4 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 905C SMB 1.5 W Tlead= 605C F126 1.5 W THERMAL AND POWER DATA Symbol Parameter 1.0 1.2 1.4 1.6 1.8 IF(av) (A) P1(W) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 Fig. 1 : Conduction losses versus reverse volt - age applied (typical values). STTA106/U STTA106/U 4/8 SWITCHING LOSSES in the transistor due
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3750.htm
STMicroelectronics 20/10/2000 11.23 Kb HTM 3750.htm
COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very high 1.4 W I F(AV) = 0.8A d = 0.5 Tlead= 605C F126 1.4 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 905C SMB 1.5 W Tlead= 605C F126 1.5 W THERMAL AND POWER DATA Symbol Parameter 1.0 1.2 1.4 1.6 1.8 IF(av) (A) P1(W) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 Fig. 1 : Conduction losses versus reverse volt - age applied (typical values). STTA106/U STTA106/U 4/9 SWITCHING LOSSES in the transistor due
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3750-v2.htm
STMicroelectronics 14/06/1999 8.86 Kb HTM 3750-v2.htm
COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : ISOTOP Electrical insulation : 2500V power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 Tc= 545C 120 W ISOTOP Tc= 485C THERMAL AND F 2 (RMS) STTA12006TV1/2 STTA12006TV1/2 / STTA6006P STTA6006P 2/8 P1(W) 0 5 10 15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 / STTA6006P STTA6006P 4/8 Fig. A : "FREEWHEEL" MODE. TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts transistor, thus optimizing the overall performance in the end application. The way of calculating the power
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6074.htm
STMicroelectronics 20/10/2000 12.13 Kb HTM 6074.htm