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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

transistor P1

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Abstract: applied at the input, the upper p-channel transistor (P1) is off and the lower n-channel transistor (N1 , ) through the transistor P1. When changing output states from high to low, transistor P1 begins to turn off , V+ P1 VOUT VIN N1 A) Inverter Logic Symbol B) Inverter Transistor Implementation , N-channel transistor (N1) is off while the upper P-channel transistor (P1) is on. There is a back flow of current from the high supply to the low supply through the resistor R and the transistor P1. This current ... Original
datasheet

13 pages,
228.78 Kb

TS5A6542 TS5A3159A TS5A26542 TS5A12301E TS3A44159 transistor P1 SN74LVC1T45 dual supply analog switch SCDA011 SCDA011 abstract
datasheet frame
Abstract: /hold clock pulse width T4 REFOUT (Pin 14) can drive up the base current of an external transistor (P1 , to the emitter of the external transistor. (The external transistor must have enough gain and current ... OCR Scan
datasheet

6 pages,
147.12 Kb

CXA1496Q CXA1496AQ transistor 9ct QFP032-P-0707-A CXA1694Q CXA1693Q QFP-32P-L01 CXA1693Q abstract
datasheet frame
Abstract: w idth T4 R EFO U T (Pin 14) can drive up the base current of an external transistor (P1) to 400 uA. , the em itter of the external transistor. (The external tran sistor m ust have enough gain and current ... OCR Scan
datasheet

7 pages,
229.34 Kb

QFP-32P-L01 CXA1693Q CXA1693Q abstract
datasheet frame
Abstract: Yes Yes FB Build-in Transistor External Transistor Build-in Transistor Build-in Transistor P1/10 Rev. B, July 2005 ML65 ML65A ML65A Pin Configuration Package Pin Number SOT23-3 , circuit, a Lx switch driver transistor, a reference voltage unit, an error amplifier for voltage , with low noise and ultra low supply current. Switching Transistor CE Function VDD Pin FB Pin Features Build-in Transistor No No No Lx External Transistor No No ... Original
datasheet

10 pages,
1468.63 Kb

vlx60 1n5817 sot23 8 pin 4v power supply converter diode 1N5817 IC, POWER SUPPLY 10uF CAPACITOR 35V tantalum ML65 sot89 sot89-3 so sot89 1N5819 SOT23 icel p3 sot89-5 datasheet abstract
datasheet frame
Abstract: transistor P1 is ON. The intermediate point between the N1 and N2 is actively pulled to VCC by P1. When , transistor. In addition to this NMOS transistor, there exists a parasitic NPN bipolar transistor (with a beta , from achieving a 650mV VTN and turning ON. When OE is HIGH, the gate of the NMOS transistor is at , voltage of the NMOS transistor becomes lower than that of the gate. The NMOS threshold voltage, VTN, for , VBE on the parasitic NPN bipolar transistor will occur. The NPN will conduct current from the drain ... Original
datasheet

4 pages,
50.26 Kb

FSTU6800 AN-5008 IN 5008 DIODE AN-5008 abstract
datasheet frame
Abstract: transistor P1 is ON. The intermediate point between the N1 and N2 is actively pulled to VCC by P1. When , pass transistor. In addition to this NMOS transistor, there exists a parasitic NPN bipolar transistor , transistor is at 0V and the switch is OPEN or OFF. An undershoot condition actually creates two phenomena , source node voltage of the NMOS transistor becomes lower than that of the gate. The NMOS threshold , VBE on the parasitic NPN bipolar transistor will occur. The NPN will conduct current from the drain ... Original
datasheet

4 pages,
55.49 Kb

nmos transistor FSTU6800 Fairchild Bipolar Transistor High Beta AN-5008 IN 5008 DIODE AN-5008 abstract
datasheet frame
Abstract: Build-in Transistor Build-in Transistor P1/10 Rev. B, June 2006 Marking: SOT23: ML63A ML63A series , oscillator, a PFM control circuit, a Lx switch driver transistor, a reference voltage unit, an error , TO-92 SOT23-5 SOT89-5 SOT23-5 SOT89-5 SOT23-5 SOT89-5 SOT23-5 SOT89-5 Switching Transistor CE Function VDD Pin FB Pin Features Build-in Transistor No No No Lx External Transistor No No No Ext Yes No No Lx+CE Yes No No Ext+CE ... Original
datasheet

11 pages,
1570.97 Kb

marking code SS SOT23 marking code lx diode marking code of sot89 transistor marking 93, sot-89 ML63S ML63SA33 so sot89 sot23 Transistor marking p2 sot89 93 sot89 marking 93 MARKING CODE B2 SOT23-5 IC 74xx series ML63S abstract
datasheet frame
Abstract: BIAS 13 VLD PHOTODIODE R2 10 R1 15 C7 0.01µF Optional Shutdown Transistor P1 , VCC VLD V7 V5 R3 V4 V2 V4 V2 V1 V5 P1 V3 V5 Q1 V4 Thermal ... Original
datasheet

7 pages,
278.99 Kb

vlf ferrite HFDN-26 MAX3656 MAX3735 MAX3735A MAX3737 MAX3850 Modulating VCSELs SLT2170-LN HFAN-02 HFAN-09 HFDN-26 abstract
datasheet frame
Abstract: BIAS 13 VLD PHOTODIODE R2 10 R1 15 C7 0.01µF Optional Shutdown Transistor P1 , VCC VLD V7 V5 R3 V4 V2 V4 V2 V1 V5 P1 V3 V5 Q1 V4 Thermal ... Original
datasheet

7 pages,
592.58 Kb

SLT2170-LN OC48 MAX3737 MAX3735A MAX3735 MAX3656 HFDN-26 HFAN-09 HFRD-04 HFDN-26 abstract
datasheet frame
Abstract: charged to VDD by turning on transistor P1 . When the voltage on the capacitor reaches Vref 2, the reset , be externally grounded VSS CONTROL + C1 - ENABLE Vref2 ENABLE + C2 - VDD P1 MC14538B MC14538B 1 (15 , trigger is recognized, which turns on comparator C1 and N-channel transistor N1 . At the same time the output latch is set. With transistor N1 on, the capacitor CX rapidly discharges toward V SS until Vref1 is reached. At this point the output of comparator C1 changes state and transistor N1 turns off. ... Original
datasheet

9 pages,
120.74 Kb

BA rx transistor 14538b ON CD4098 14538B mc14538b MC14538B MC14528B CD4528B MC54/74HC4538A MC14538B abstract
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Datasheet Content (non pdf)

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www.datasheetarchive.com/download/57904041-314022ZC/soundfxcod.zip (SOUNDFX.DOC)
KyteLabs 11/06/2002 3.34 Kb ZIP soundfxcod.zip
OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 905C SMB 1.5 W Tlead= 605C F126 1.5 W THERMAL AND POWER 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IF(av) (A) P1(W) d = 1 d = 0.5 d = 0.2 d = 0.1 d = STTA106/U STTA106/U STTA106/U STTA106/U 4/8 SWITCHING LOSSES in the transistor due to the diode TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode CONDUCTION LOSSES in the diode
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3750.htm
STMicroelectronics 20/10/2000 11.23 Kb HTM 3750.htm
ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR F(AV) = 1.5A d = 0.5 Tlead= 725C 2.5 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 675C 2.8 W THERMAL AND POWER DATA Symbol Parameter Test conditions Min Typ Max Unit t rr ) STTA206S STTA206S STTA206S STTA206S 2/8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) IF(av) (A) d = applied (typical values). STTA206S STTA206S STTA206S STTA206S 4/8 TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3752-v2.htm
STMicroelectronics 14/06/1999 8.59 Kb HTM 3752-v2.htm
ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR F(AV) = 1.5A d = 0.5 Tlead= 725C 2.5 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 675C 2.8 W THERMAL AND POWER DATA Symbol Parameter Test conditions Min Typ Max Unit t rr ) STTA206S STTA206S STTA206S STTA206S 2/8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) IF(av) (A) d = applied (typical values). STTA206S STTA206S STTA206S STTA206S 4/8 TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3752-v1.htm
STMicroelectronics 02/04/1999 8.63 Kb HTM 3752-v1.htm
TRANSISTOR HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very high performance 605C F126 1.4 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 905C (av) (A) P1(W) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 Fig. 1 : Conduction losses applied (typical values). STTA106/U STTA106/U STTA106/U STTA106/U 4/8 SWITCHING LOSSES in the transistor due to the diode TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3750-v3.htm
STMicroelectronics 25/05/2000 10.52 Kb HTM 3750-v3.htm
Application Note RF POWER TRANSISTOR BALLASTING Format July 2000 1/9 AN1225 AN1225 AN1225 AN1225 APPLICATION NOTE RF POWER TRANSISTOR BALLASTING IMPROVES they are in the main beam of the SSR antenna. P1 P2 P3 Transmit Receive # 1 Receive # 2 P1 > P2 = REPL Y P2 > P1 = IGNORE AIRCRAFT # 1 AIRCRAFT # 2 P1 , P3 P2 Notched Main Beam interrogation: directional, main beam and omnidirectional (Figure 2). If pulses P1 and P2 are transmitted
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6967.htm
STMicroelectronics 20/10/2000 24.21 Kb HTM 6967.htm
TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS AN1225 AN1225 AN1225 AN1225 Document Format NOTE RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS Anthony T. Harris SSR antenna. P1 P2 P3 Transmit Receive # 1 Receive # 2 P1 > P2 = REPL Y P2 > P1 = IGNORE AIRCRAFT # 1 AIRCRAFT # 2 P1 , P3 P2 Notched Main Beam Secondary surveillance interrogation: directional, main beam and omnidirectional (Figure 2). If pulses P1 and P2 are transmitted
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6967-v1.htm
STMicroelectronics 25/07/2000 23.82 Kb HTM 6967-v1.htm
TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY FEATURES AND BENEFITS TURBOSWITCH 1200V (AV) = 1.5A d = 0.5 Tlead= 725C 2.5 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) d =0.1 d =0.2 d =0.5 d =1 IF(av diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode CONDUCTION LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode REVERSE LOSSES in the diode The 1200V TURBOSWITCH has
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3753-v1.htm
STMicroelectronics 02/04/1999 8.7 Kb HTM 3753-v1.htm
TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY FEATURES AND BENEFITS TURBOSWITCH 1200V (AV) = 1.5A d = 0.5 Tlead= 725C 2.5 W P max Total power dissipation Pmax = P1 + P3 (P3 = 10% P1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W) d =0.1 d =0.2 d =0.5 d =1 IF(av diode P = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode CONDUCTION LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode REVERSE LOSSES in the diode The 1200V TURBOSWITCH has
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3753-v2.htm
STMicroelectronics 14/06/1999 8.67 Kb HTM 3753-v2.htm
TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY FEATURES AND BENEFITS TURBOSWITCH Pmax = P1 + P3 (P3 = 10% P1) Tlead= 675C 2.8 W THERMAL AND POWER DATA Symbol Parameter Test /8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P1(W = P1+ P2+ P3+ P4+ P5 Watts SWITCHING LOSSES in the diode CONDUCTION LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode REVERSE LOSSES in the diode
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3753-v3.htm
STMicroelectronics 25/05/2000 10.4 Kb HTM 3753-v3.htm