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BYI-1T Microsemi Corporation Transistor visit Digikey Buy
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transistor P 0.2 V

Catalog Datasheet MFG & Type PDF Document Tags

transistor p86

Abstract: sps transistor it » -*» « Photo Transistor a « T -V /- 7 3 Lens Appearance Clear Colored Clear Colored , , M U ì È W v s f cY 4 > ? 7 7 ° ? T t o P - 76 m C W « C T 1 , m « £ *M H 0 Drawing No. P-83 P-84 P-85 P-86 4 tt Ä If mA m m 5 "J V X ^ r k , 50 50 , FEATU RE S S P I - 1 4 0 x ' lê^^GaAsi^^LEDè-, ÍC Si * V h 7 > i > x ? * x · Use o f G aA s infrared , rSA N Y O S E M IC O N D U C T O R CORP 7b D Ë J 7=1^7071= D O O a S l? S p
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62003F

Abstract: 62004A 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (2) v OU T (V) 'O U T (m A ) CLAM P , Transistor Arrays B i p o l a r |Tra n s i st o r| rray| (40Series, 226Devices) TTL TD62 xxx P O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F CP ~35V 50V 80V 100 V 19 [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (1) v OUT (V ) 107 107 T D 62003P/PA 107 117 107 117 107 107 TD 62003A P/ A PA TD 62004A
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62003F 62004A 62004f 62004AP TD62801P 62c852 62003F/FB/ 62004F/FB/ 62004P/PA DIP20 62C852P 10UT1
Abstract: -P o - 10 - 10 7 5 7 5 â - ._ 3 _- '2 3 2 2 V e c i = V CO î= = 1 2 .5 V 1 1 0.7 P in â'" 5 m W 0 .5 T c = 25 C 0.7 0 .5 0 , ‰ Pin (d B m ) -» â  1st DC SU P PLY VOLTAGE Veci (V) OUTPUT POW ER, EACH CURRENT VS. 1st DC SUPPLY VOLTAGE 1st D C SU P PLY VOLTÃ'GE Veci (V) A MITSUBISHI ELECTRIC 3 2 V , IN P U T P O W E R j * / 2 7 5 ,2 _ i â'" â'" â'"â  3 3 = V c c i = V c -
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M57789 889-915MH
Abstract: temperature of the third stage transistor = Tj3 = ( V CC2 x Its - P o3 + P 0 2 ) x R th (j-c )3 + Tc , transistor Tj4 = (V C C 2 x l T 4 - PQ 4 + P 0 3 ) x R th (j-c )4 + Tc = (12.5 x 0.43 - 2 + 0.5) x 9 + Tc , ® V c c i : 1 s t. D C S U P P L Y ® V c c 2 : 2nd. DC S U P P L Y ® V c c 3 : 3 rd . D C S U P , otherwise noted) Symbol VCC1.2 VCC3 Ico Pin(m ax) P o(m ax) TC(OP) Tstg N o te . A b o v e , . A b o v e Vcci = Vcci = 8V, Vcc3 = 12.5V P in = 1mW Z g = Z l = 50 Q Load VSWR tolerance -
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0D17ST3 M57793 903-905MHZ

KBR800H

Abstract: KBR-1000H Ports S, K, P, M, SO and A pull-down transistor input resistance VDD­0.2 V 0.2 VDD­0.2 V , 0 to maximum generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage , generated voltage V Ports K, P, SO and A, and CUP1, CUP2, SEG1 to SEG 35 and COM1 to COM4 output , to +13 V Ports N output current range IO1 ­10 to +15 mA Ports K, P, M, SO and A , 0.25VDD 0.75VDD V VDD V Ports K, P, M, SO and A output low-level voltage Ports K, P, M
SANYO Electric
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KBR800H KBR-1000H KBR-800H ENN3410C LC58E68 LC586X
Abstract: P U T © V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d , 5°C 0.3 MHz â Vb b â'"8 V if h "P in â'" 5 mW T c = 25 °C ' 0.11 0.2 , transistors are shown in Table 1. â'¢ Junction temperature of the first stage transistor Tjn = (V CCi x Ix i , temperature of the second stage transistor T j2 = ( V c c i â'¢ Table 1 : The conditions at standard , the third stage transistor T]3 = (V c c 2 x I t 3 _ ^ 0 3 + P0 2 ) x ^ th (j-c )3 + T c = (12.5 X -
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2sc3052ef

Abstract: 2n2222a SOT23 Maximum Ratings N = NPN P = PNP VCE0 [V] IC [mA] IC VCE [mA] [V] f Gma,Gms [MHz] [dB , N = NPN P = PNP Maximum Ratings BFR193L3 BFR340L3 BFR360L3 BFR380L3 VCE0 [V] 12 6 6 , Booster Transistor [V] [mA] [mA] [V] Protection Features Package Family Overvoltage , N = NPN P = PNP BF517 BF770A BF771 BF775 BF799 BF799W BFG135A BFG193 BFG196 BFG19S , BFR360F BFR380F BFR92P BFR92W BFR93A BFR93AW BFS17P BFS17S BFS17W BFS481 BFS483 VCE0 [V] 15
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG235 BFP181 BFP181R BFP182 BFP182R BFP182W
Abstract: 10mA QUAD COLLECTOR CONTACT FEATURES Four Collector Contacts Matched V b e and hpE Transistor , for Reduced Noise Dual Collector Contacts Matched V b e and hpp transistor parameters TYPICAL , of Vp 1s satisfied by tvp (2) â'VF (1) * * Z 'iVF(MAX)' w* ere VF(1) #mi ' V p ^ ) are any two , ; therefore, V z 1s tested at lyA and 10m A for each transistor. Operation at higher current has been fully , Transistor with Clamp (Notes 2,3) JCB0 T a =125°C V Collector-Emitter Leakage Current ICE0 -
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1250C T-42-21

3410C

Abstract: KBR-1000H generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage range V|2 -0.3 to Vdd + 0.3 V XTOUT and CFOUT output voltage range â'¢ Voi 0 to maximum generated voltage V Ports K, P, SO and , IXA Porte S, K, P, M, SO and A, and INT LOW-level input voltage Vili 0 - 0.3Vdd V Ports S, K, P, M , , SO and A LOW-level output voltage VoL2 Iol = 400 nA - 0.2 0.5 V Ports K, P, M, SO and A HIGH-level , to COM4 HIGH-level output voltage VoHfl Ioh = -100 na Vdd - 0.2 - - V Ports S, K, P, M, SO and A
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3410C mp 3410 LC5863H LC5864H CSB800J CSB1000J
Abstract: VCC2 = 1 2.5V -V bb â'" í V r P in = 5 mW / 1 t/ 1 " â'" 0 01 00 I 3 â c 2 , ( V c c 2 X It 3 ~ ^ 0 3 + P o 2 ) x ^ t h ( j - c ) 3 + T c = ( 1 2 .5 x 0 .2 8 -1 .3 + 0 .4 ) x 15 + TC = 39.0 + T c (°C) Junction temperature of the fourth stage transistor T j4 = ( V c c 2 x , = 45.9 + Tc (°C) Junction temperature of the final stage transistor Tjs = ( V c c 3 x I t B - , temperature of the first stage transistor â'¢ T jl = (V cci X ^T1 _ Poi + Pin) x R th (j-c)! + T c*Note -
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890-915MH
Abstract: stage transistor â'¢ Tj i = ( V CC x IT1 - P 01 + P i n ) x R t h i j - c i + T c (Note4) = ( 1 2 , temperature o f final stage transistor T j 2 = ( V CC x I t 2 â' Po + P o i ) x R t h ( j ~c)2 + T c = , T c â'" 25'C V c c =- 1 2 . 5 ' / P in = 0 .3 W Z L= 5 20 hz UJ cr 5 10 K . 232 O , CURRENT VS. INPUT POWER cr < V INPUT POWER P in (W ) - SUPPLY VOLTAGE VCC1=VCC2 ( V , CURRENT, VS. FIRST VOLTAGE 100 Tc = 25'C V c c 2 = 1 2 .5 V 50 - f = 2 30 M H z P in = 0 . 3W 30 -
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M57774 220-225MH 220-225MHZ

transistor 12w

Abstract: M57789 firs t stage transistor T ji = ( V c c i X I t j " P o 1 + Pin ) x ^ t h ( j - c ) 1 + T C * Nota 1 , / V A i ,P L - TV 1C v' 5`C £> 0.3 0.2 0.1 12 0.1 0.07 0.05 If / 10 , (Typ.) c) Third stage transistor P th (j-c )3 ~ 15°C/W (Typ.) d) Fourth stage transistor R th(i-c)4 = 7.50C/W (Typ.) e) Final stage transistor Rth , second stage transistor T j2 = W CC1 x *T2 " P 0 2 + P o l i x ^ t h ( j~ c ) 2 + T c · · =
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transistor 12w

BULD85KC

Abstract: BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t© 1997, Power Innovations , INNOVATIONS P BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE M AY 1994 - REVISED SEPTEM BER , Typically 1 |j s TO-220 PACKAGE (TOP VIEW) B C C C E C Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running , transistor. The integrated diode has m inim al charge coupling with the transistor, increasing frequency
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Abstract: Tc (°C) Junction temperature of the fourth stage transistor Tj4 = ( V C C 2 X l T 4 - P 0 4 + P 0 , 0.2 0.02 0.1 2nd STAGE DC SUPPLY V O L TA G E V CC2 (V) IN P U T POWER Pin {dBm} OUTPUT , . Junction temperature of the first stage transistor T ji = (V CC1 x IT1 - P0 i + Pin) x Rth(i. c)i + Tc , Dimensions in mm PIN ; © P in : RF INPUT ®VCC1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY , unless otherwise noted) Symbol Voci VCC2 VCC3 Icc Pin(max) Po(m ax) T c (O P ) T s tg -
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905MH

TH 2190 Transistor

Abstract: transistor Tj3 = (V CC2 â'¢ (2 ) V p c , I t . input & output power conditions at stand­ ard , OUTLINE DRAWING Dimensions in mm P IN : © P in : RF IN P U T ® V c c i : 1 s t. D C S U , V S . IN P U T PO W E R O U T P U T P O W E R , EACH C U R R E N T V S . FR E Q U E N C Y 10 7 , FREQUENCY IN P U T P O W E R Pin (d B m ) f (M H z ) O U T P U T P O W E R , EACH C U R R E N T V S . 2nd DC SU P P L Y VOLTAGE 10i i . . O U T P U T P O W E R , EAC H C U R R E N T V S
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TH 2190 Transistor DG17E M57791

cb pj 47 diode

Abstract: b MODE OF OPERATION f (GHz) VCE (V) Icq (A) P li (W) Gpo (dB) TIC (% , OPERATION f (GHz) VCE (V) Icq (A) P li (W) Gpo (dB) TIC (%) Z|/ZL (O) class , N AUER PHILIPS/DISCRETE b^E J > bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ , transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. Fig
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cb pj 47 diode S3T31 DD3227 LFE15600X 15600X
Abstract: verter and a current source type output section. The output section is composed of a P N P transistor and an N PN Darlington transistor, w ith the base cu rren t of the P N P transistor con stant. A clamp , transistor a rra y is suitable for drivin g replays, p rin ters, L E D fluorescent display tubes and lamps as , 30 4 -U n it 400m A Transistor Array IR 2C26 Absolute Maximum Ratings Param eter S u p p , time of loi T v ,N v, i, P[. A P, °C T ., T.K Ta £ 25 C T a > 2 5 °C ! output being "H " Svm bol -
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IR2C26

486DX-CPU

Abstract: tamagawa Voltage (V) N+ Gate P- Substrate Figure 4: Direct tunneling leakage mechanism for thin SiO2 As , 0.4 0.4 0.4 0.4 0.3 0.3 C Miller 0.2 0.2 0.2 0.2 C Miller = C O v e r l a p +C F r , Scaling: Transistor Challenges for the 21st Century 0.4 0.5 VTP (V) 0.6 0.7 9 Intel , MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology , Technology Development, Intel Corp. Index words: SDE, transistor, scaling Table 1: Fundamental scaling
Intel
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486DX-CPU tamagawa 486DX retrograde well 0.35 transistors mos

ultra low noise RF Transistor

Abstract: BFR740F A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ' s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s , Transistor in TSFP-4 package is shown in a +3.0 V 2.33 GHz LNA application. Amplifier draws 8.9 mA. +5 V , 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF
Infineon Technologies
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ultra low noise RF Transistor BFR740F sdars sdars lna RF TRANSISTOR 20 GHZ low noise Low Noise R.F

876A

Abstract: IR TRANSISTOR +) 1 ftrf V cc-S V T a-2 8 C nS TYP V c c * 6.26V If-2 0 m A 0 /P » Q N D tDtfl V cc-S V lf - 0 V o , - 1 0 m A C I- S 0 P F R 1- 390 US MIN 0.5 0.5 0.5 M S MAX 5 5 5 f Dhl tr C I- 6 0 P F R1-390 V , |iA l e - 100gA V r - 3V* lf - 0 1 h- 0 nA IIA V V m u MAX MAX M IN P H V Y l Ir BVceo IV eco 30 tr , -40mA Ic-lOOuA *0-0.200' V MAX 0.4 Vceitol) lf-40mA Ic-S p A ·0-0.150* V MAX 8 Outoul i | PK611 , Optolink Ltd Optical Switches ChanetorM te ic o n Ic O F F V c* A t Shown H -0 IO N | 1OFF
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876A IR TRANSISTOR H21A1 H21A2 B13S3 813S5 813S7 H21B1
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