NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10+ 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + , SYMBOL RATING P UNIT F 1 L F 2 3 Collector-Base Voltage VCBO -160 V , A Base Current IB -0.3 A MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.89 + 0.1 _ 2.00 + 0.20 _ ... | Original |
1 pages, |
KTC2983D/L KTC2983D/L abstract |
|
|||
| Abstract: Ic (max) AMPS h FE @ V VCE min/max @ mA/V VcE(Mt) @IC/IB V @ inA/mA C , 60 0.2 50/150@10/l 0.25@10/1 6 250 2N3251AA 2N3251AA 60 0.2 100/300@10/1 0.25@10/1 6 300 2N3496 2N3496 80 0.1 , 100 2N3799 2N3799 60 0.05 300@l/5 0.25@1/0.1 4 100 2N3962 2N3962 60 0.2 100/450@l/5 0.25@ 10/0.5 6 40 2N3963 2N3963 80 0.2 100/450@l/5 0.25@10/0.5 6 40 2N3964 2N3964 45 0.2 250/600@l/5 0.25@10/0.5 6 50 2N3965 2N3965 60 0.2 250 , BC107 BC107 45 0.2 110/450@2/5 0.25@ 10/0.5 4.5 150 BC108 BC108 25 0.2 120/800@2/5 0.25@10/0.5 4.5 150 BC109 BC109 25 ... | OCR Scan |
1 pages, |
2N2906 2N2907 2N3496 2N3497 2N3798 2N3799 2N4028 2n869a bc107 transistor bc109 TRANSistor BC108 TO-18 amps pnp transistor 2N2907aA transistor BC109 T0206AA 2N2906 abstract |
|
|||
| Abstract: 3 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ , 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ... | Original |
2 pages, |
datasheet abstract |
|
|||
| Abstract: 2.5 3.0 3.0 8.0 2.0 Max. Units 0.2 0.5 IC = 100A IB1 = +0.1A IB2 = -2A V V us , 2DI100MA-050 2DI100MA-050 (100A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , (Tc=25°C unless otherwise specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Symbol Rating VCBO 600 VCEO 600 VCEO(SUS) 450 VEBO 10 IC , nu i t con s Unit V V V V A A A A A W W °C °C g V Nm Nm M203 E82988 E82988(M ... | Original |
3 pages, |
M203 2DI100MA-050 transistor 1240 2DI100MA-050 abstract |
|
|||
| Abstract: W °C °C g V Nm Nm Nm ct. u rod p Note: *1:Recommendable Value; 3.5to4.0Nm , Diode With Thermal Compound Min. Typ. Max. 0.083 0.2 0.04 Units °C/W °C/W °C/W 1 , con s ct. u rod p 2 ETN01-055 ETN01-055 (200A) FUJI POWER TRANSISTOR MODULE Di , ETN01-055 ETN01-055 (200A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , specified) Item DC 1ms DC DC 1ms one Transistor AC.1min Di ... | Original |
3 pages, |
ETN01-055 ETN01-055 abstract |
|
|||
| Abstract: SEMICONDUCTOR KTD2424 KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) C M N P Q R P , /-0.05 _ 3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 DIM A B C D E F , UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 VEBO ... | Original |
1 pages, |
KTD2424 KTB1424 KTB1424 abstract |
|
|||
| Abstract: SEMICONDUCTOR KTB1424 KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) C M N P Q R P S Complementary to KTD2424 KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL , 0.76+0.09/-0.05 _ 3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 DIM A B C D E ... | Original |
1 pages, |
KTD2424 KTB1424 KTD2424 abstract |
|
|||
| Abstract: /200@150/10 1,0@150/15 15 100 v 2N3013 2N3013 15 0.2 30/100@30/0.4 0.18@30/3 5 350* 2N3014 2N3014 20 0.2 25@10/0.4 , NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS îc (max) AMPS hFE @ Ic/ VCE min/max @ inA/V VcE(s»t) @IC/IB V @ 111 A/in A C , 0.2@150/15 12 100 2N3946 2N3946 40 0.2 50/150@10/l 0.2@10/1 4 250 2N3947 2N3947 40 0.2 100/300@ 10/1 0.2@10/1 4 300 ... | OCR Scan |
1 pages, |
2N3014 2N3013 2N2896 2N2895 2N3700 JANTX 2N2484 2N3946 2n3946 npn transistor 2N3947 2N2897 2N2484 JANTX 2N3013 JANTX 2N3302 2n3700a 2N2481 2N2484 2N2481 abstract |
|
|||
| Abstract: Unit V V V V A A A A A W °C °C ct. u rod p Electrical characteristics (Tc =25°C , ) Test Conditions Junctionl to case Min. Typ. 0.2 °C/W 1 ET188 ET188 FUJI POWER TRANSISTOR Characteristics Di d e nu i t con s ct. u rod p 2 ET188 ET188 FUJI POWER TRANSISTOR Di d e nu i t con s ct. u rod p 3 ET188 ET188 FUJI POWER TRANSISTOR Di d e nu i t con s ct. u rod p 4 ... | Original |
4 pages, |
IC free transistor ET-188 free transistor high power ET188 FUJI POWER TRANSISTOR ET188 abstract |
|
|||
| Abstract: specified) Item DC 1ms DC DC 1ms one Transistor AC.1min Di : Equivalent Circuit Schematic d e nu i t con s Unit V V V V A A A A A W °C °C g V Nm Nm Nm ct. u rod p Note: *1:Recommendable Value; 3.5to4.0Nm , Thermal Compound Min. Typ. Max. 0.083 0.2 0.04 Units °C/W °C/W °C/W 1 ETN31-055 ETN31-055 , ETN31-055 ETN31-055 (200A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline ... | Original |
2 pages, |
ETN31-055 6a transistor ETN31-055 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| - MAX (mA) KIND Y FS (ms) KIND I G (mA) -V(P)GS (V) Y FS (ms) CRS (pF) V DS @ max. (V) -V(P)GS (V) CRS (pF) I DSS MIN - MAX (mA) I DSS MIN - MAX (mA) KIND Y FS (ms) I G (mA) CRS (pF) V DS @ max. (V) -V(P)GS (V 0.2 to 1.5 General purpose amplifiers www.datasheetarchive.com/files/philips/pip/bft46_cnv_2-v1.html |
Philips | 14/02/2002 | 7.45 Kb | HTML | bft46_cnv_2-v1.html |
| 15000.0@10V 15000.0@10V 250 15000.0@10V 0.2 Single P-channel 250 0.2 Single P-channel 12 - 300 V P-channel MOSFETs 250 0.2 12 - 300 V P-channel MOSFETs BSP254 BSP254 BSP254 BSP254; BSP254A BSP254A BSP254A BSP254A P-channel enhancement mode vertical D-MOS transistor P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line BSP254 BSP254 BSP254 BSP254; BSP254A BSP254A BSP254A BSP254A P-channel enhancement mode vertical D-MOS transistor 01-Apr-95 www.datasheetarchive.com/files/philips/pip/bsp254_a_cnv_2-v1.html |
Philips | 14/02/2002 | 7.06 Kb | HTML | bsp254_a_cnv_2-v1.html |
| .0","4.0","10","25.0","50","50","","","25","", "BSR57 BSR57 BSR57 BSR57","SOT23","N-channel junction field-effect transistors for switching","40.0","2 to 6","5","20.0","2 ","80.0","3.0","10","8.0","50","80","typ. 4","6","","", "J109","SOT54","N-channel junction field-effect transistors for switching","25.0","2 ","N-channel junction field-effect transistors for switching","40.0","2 to 5","3.5","25.0","2 ","80.0","3.0","10","8.0","50","80","typ. 4","6","","", "PMBFJ109 PMBFJ109 PMBFJ109 PMBFJ109","SOT23","N-channel junction field-effect transistors for switching","25.0","2 shown. "Type www.datasheetarchive.com/download/25230819-648936ZC/15528_e.csv |
Philips | 13/06/2005 | 3.3 Kb | CSV | 15528_e.csv |
| Conditions Value Unit Min. Typ. Max. P OUT f = 1.4 GHz P IN = 0.2W V CC = 28V 2.0 - - W h c f = 1.4 GHz P IN = 0.2W V CC = 28V 50 - - % G P f = 1.4 GHz P IN = 0.2W V CC = 28V 10.0 - - dB C OB f = 1MHz V CB = 28V - 3.2 - pF STATIC Symbol ST | GENERAL PURPOSE AMPLIFIERS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIERS APPLICATIONS RF & MICROWAVE TRANSISTORS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2750-v3.htm |
STMicroelectronics | 25/05/2000 | 5.51 Kb | HTM | 2750-v3.htm |
| . Typ. Max. P OUT f = 1.4 GHz P IN = 0.2W V CC = 28V 2.0 - - W h c f = 1.4 GHz P IN = 0.2W V CC = 28V 50 - - % G P f = 1.4 GHz P IN = 0.2W V CC = 28V 10.0 - - dB C OB f = 1MHz V CB = 28V - 3.2 - pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO I C ST | GENERAL PURPOSE AMPLIFIERS APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet GENERAL PURPOSE AMPLIFIERS APPLICATIONS RF & MICROWAVE TRANSISTORS MSC www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2750.htm |
STMicroelectronics | 20/10/2000 | 5.72 Kb | HTM | 2750.htm |
| . P OUT f = 2.0 GHz P IN = 0.2 W V CC = 28 V 1.0 1.2 - W h c f = 2.0 GHz P IN = 0.2 W V CC = 28 V 35 40 - % G P f = 2.0 GHz P IN = 0.2 W V CC = 28 V 7.0 7 MSC82001 MSC82001 MSC82001 MSC82001 2/5 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE P IN = 0.2 W designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. PIN CONNECTION Parameter Value Unit P DISS Power Dissipation* 7.0 W I C Device Current* 200 mA V CC www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2756-v3.htm |
STMicroelectronics | 25/05/2000 | 6.17 Kb | HTM | 2756-v3.htm |
| ","250.0","1.0","4","35","35","50","2 to 35","50", "PMBFJ177 PMBFJ177 PMBFJ177 PMBFJ177","SOT23","P-channel junction field-effect transistors for switching","30.0","2 -channel junction field-effect transistors for switching","30.0","2.25","0.8 to 2.25","4","45","45","1.5","20","300 Selection results for P-channel junction field-effect transistors for switching, 8 results shown. "Type > www.datasheetarchive.com/download/23316735-648942ZC/15554_e.csv |
Philips | 13/06/2005 | 1.97 Kb | CSV | 15554_e.csv |
| case = 25 5 C) Symbol Test Conditions Value Unit Min. Typ. Max. P OUT f = 2.0 GHz P IN = 0.2 W V CC = 28 V 1.0 1.2 - W h c f = 2.0 GHz P IN = 0.2 W V CC = 28 V 35 40 - % G P f = 2.0 GHz P IN = 0.2 W V CC = 28 V 7.0 7.8 - dB C OB f = 1 MHz V CB = 28 V - - 3.2 pF STATIC /5 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE P IN = 0.2 W V CC = 28 V Normalized was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. PIN CONNECTION www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2756.htm |
STMicroelectronics | 20/10/2000 | 6.44 Kb | HTM | 2756.htm |
| Test Conditions Value Unit Min. Typ. Max. P OUT f = 2.0 GHz P IN = 0.2 W V CC = 28 V 1.0 1.2 - W h c f = 2.0 GHz P IN = 0.2 W V CC = 28 V 35 40 - % G P f = 2.0 GHz P IN = 0.2 W V CC = 28 V 7.0 7.8 - dB C 2/5 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE P IN = 0.2 W V CC = 28 V Normalized to conditions. The MSC82001 MSC82001 MSC82001 MSC82001 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range Parameter Value Unit P DISS Power Dissipation* 7.0 W I C Device Current* 200 mA V CC Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2756-v1.htm |
STMicroelectronics | 02/04/1999 | 4.36 Kb | HTM | 2756-v1.htm |
| Test Conditions Value Unit Min. Typ. Max. P OUT f = 2.0 GHz P IN = 0.2 W V CC = 28 V 1.0 1.2 - W h c f = 2.0 GHz P IN = 0.2 W V CC = 28 V 35 40 - % G P f = 2.0 GHz P IN = 0.2 W V CC = 28 V 7.0 7.8 - dB C 2/5 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE P IN = 0.2 W V CC = 28 V Normalized to conditions. The MSC82001 MSC82001 MSC82001 MSC82001 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range Parameter Value Unit P DISS Power Dissipation* 7.0 W I C Device Current* 200 mA V CC Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2756-v2.htm |
STMicroelectronics | 14/06/1999 | 4.32 Kb | HTM | 2756-v2.htm |