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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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transistor P 0.2 V

Catalog Datasheet Results Type PDF Document Tags
Abstract: ) ® U (mA) Optimum Point Of Response (In.) Page No. HOAOI49-001 HOAOI49-001 Transistor 1.0 40 0.20 228 HOA0708-001 HOA0708-001 HOA0708-011 HOA0708-011* Transistor 0.2 40 0.15 232 ,· ' j HOA0709-001 HOA0709-001 , 240 HOA1397-001 HOA1397-001 HOA1397-002 HOA1397-002 |· Transistor 0.2 0.7 2.0 7.0 0.2 0.8 2.0 20 0.05 244 , HOA1404-003 HOA1404-003 Darlington HOA1405-001 HOA1405-001* HOA1405-002 HOA1405-002* Transistor 0.2 0.8 30 0.20 252 , a n g e s in o r d e r to im p ro v e d e s ig n a n d s u p p ly th e b e s t p ro d u c ts po s s ... OCR Scan
datasheet

1 pages,
27.29 Kb

HOA1406-001 datasheet abstract
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Abstract: ype (D7) (V) Neh 2 elem ents 50 40 Id (mA) 1 Basic Type X N 1D 8 73/X P 1D 873* XN 1D 874/X 874/X P 1D 874 0.02 0.001 2 0.2 1 .8 C is s /lp F 10 10 2S K 1103 2S K1842 K1842 f= 1M , Package Ic (A) Ib (No.) (V) - 0.2/0.2 - 0.2/0.2 - 0.5 C i,(tvp .) (mA) U N 206 U N 208 , Transistor Arrays V cE O Application Type No. Polarity le (A) V cE(sat) (V) - 18/18 - 18 , 0.2/0.2 - 0.4/0.4 - 0.5/0.5 - 0.3/0.3 - 0.3/0.3 Vr - 10/10 - 10/10 -5 0 f = 1MHz SO-10C SO-10C(I)78 ... OCR Scan
datasheet

1 pages,
48.23 Kb

transistor xn n227 K-1103 datasheet abstract
datasheet frame
Abstract: Type No. SPI-302-02 SPI-302-02 SPI-304-04 SPI-304-04 SPI-306 SPI-306 SPI-310 SPI-310 V 20 20 20 20 ¡A 0,2 0.2 0.2 0.2 ßS 30 30 30 30 , it » -*» « Photo Transistor a « T -V /- 7 3 Lens Appearance Clear Colored Clear Colored , -2 5 -8 0 -2 5 -8 0 -2 5 -8 0 -2 5 -8 0 -2 5 -8 0 #A 0.2 0,2 0.2 0.2 0.2 0.2 0,2 50 -f 50 , ÿXi'ÿffllr'fc, M U ì È W v s f cY 4 > ? 7 7 ° ? T t o P - 76 m C W « , Characteristics m « £ *M H 0 Drawing No. P-83 P-84 P-85 P-86 4 tt Ä If mA m m 5 "J V X ^ r k ... OCR Scan
datasheet

4 pages,
406.41 Kb

transistor p89 p88 transistor sanyo phototransistor spi105 P82 transistor transistor 86 y transistor p83 transistor p88 SPI140-01 p83 transistor sps transistor transistor p86 datasheet abstract
datasheet frame
Abstract: 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10+ 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + , SYMBOL RATING P UNIT F 1 L F 2 3 Collector-Base Voltage VCBO -160 V , A Base Current IB -0.3 A MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.89 + 0.1 _ 2.00 + 0.20 _ ... Original
datasheet

1 pages,
61.64 Kb

KTC2983D/L KTC2983D/L abstract
datasheet frame
Abstract: 2.5 3.0 3.0 8.0 2.0 Max. Units 0.2 0.5 IC = 100A IB1 = +0.1A IB2 = -2A V V µs , 2DI100MA-050 2DI100MA-050 (100A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , (Tc=25°C unless otherwise specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Symbol Rating VCBO 600 VCEO 600 VCEO(SUS) 450 VEBO 10 IC , nu i t con s Unit V V V V A A A A A W W °C °C g V Nm Nm M203 E82988 E82988(M ... Original
datasheet

3 pages,
337.45 Kb

transistor P 0.2 V M203 2DI100MA-050 transistor 1240 2DI100MA-050 abstract
datasheet frame
Abstract: Ic (max) AMPS h FE @ V VCE min/max @ mA/V VcE(Mt) @IC/IB V @ inA/mA C , 60 0.2 50/150@10/l 0.25@10/1 6 250 2N3251AA 2N3251AA 60 0.2 100/300@10/1 0.25@10/1 6 300 2N3496 2N3496 80 0.1 , 100 2N3799 2N3799 60 0.05 300@l/5 0.25@1/0.1 4 100 2N3962 2N3962 60 0.2 100/450@l/5 0.25@ 10/0.5 6 40 2N3963 2N3963 80 0.2 100/450@l/5 0.25@10/0.5 6 40 2N3964 2N3964 45 0.2 250/600@l/5 0.25@10/0.5 6 50 2N3965 2N3965 60 0.2 250 , BC107 BC107 45 0.2 110/450@2/5 0.25@ 10/0.5 4.5 150 BC108 BC108 25 0.2 120/800@2/5 0.25@10/0.5 4.5 150 BC109 BC109 25 ... OCR Scan
datasheet

1 pages,
36.53 Kb

2N2906 2N2907 2N3496 2N3497 2N3798 2N3799 2N4028 2n869a bc107 transistor bc109 New England Semiconductor 2n2907 TRANSistor BC108 2N2907aA transistor BC109 TO-18 amps pnp transistor datasheet abstract
datasheet frame
Abstract: 3 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ , 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ... Original
datasheet

2 pages,
299.96 Kb

datasheet abstract
datasheet frame
Abstract: W °C °C g V Nm Nm Nm ct. u rod p Note: *1:Recommendable Value; 3.5to4.0Nm , Diode With Thermal Compound Min. Typ. Max. 0.083 0.2 0.04 Units °C/W °C/W °C/W 1 , con s ct. u rod p 2 ETN01-055 ETN01-055 (200A) FUJI POWER TRANSISTOR MODULE Di , ETN01-055 ETN01-055 (200A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , specified) Item DC 1ms DC DC 1ms one Transistor AC.1min Di ... Original
datasheet

3 pages,
308.14 Kb

max 550 transistor ETN01-055 ETN01-055 abstract
datasheet frame
Abstract: Conditions V Cc = 5 V, Iq = 100 |aA V 0 = 0.2 V, l0 = 5 mA 3.0 0.3 0.36 0.5 56 15.4 0.8 V mA Iq/Ii = , FMC2A (SMT5) 2.9 ± 0.2 1.9* 0.2 Jo.95 0 .9 5 J I1 fi40-2 lV6-0.1 2.8 ± 0.2 i i i i i i ïïl(2) ÏÏI , : UMC2N and FMC2A; C2 package contains an NPN (DTC124EKA DTC124EKA) and a PNP (DTA124EKA DTA124EKA) digital transistor, each , SMT3 (SMT, SC-59 SC-59) so same placement machine can be used for both Transistor, digitai, dual, PNP and , Mount Transistors novivn R,= 22 k ii R2 : 22 kiî 639 UMC2N, FMC2A Transistor, digital, dual ... OCR Scan
datasheet

4 pages,
131.07 Kb

640 TRANSISTOR NPN 639 TRANSISTOR PNP SC-74A DTC124EKA DTA124EKA SC-70 SC-59 SC-74A abstract
datasheet frame
Abstract: .h F E > 2 0 0 @ IO juA 1mA HIGH GAIN T IG H T V BE M A T C H IN G .| V B E i · V ^ l = .2m V T Y P . HIGH fT , Derating Factor Maximum Voltage and Current for Each Transistor V c b q Collector to Base Voltage V C E 0 , Capacitance 100 30 0.7 0.5 0.2 0.2 0.2 2 2 2 150 50 0.7 0.5 0.2 0.2 0.2 2 2 2 AD822A AD822A 200 600 200 600 200 75 0.7 0.5 0.2 0.2 0.2 2 2 2 LIMIT MIN. MAX. MIN. MAX. MIN. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MAX. MAX. ... OCR Scan
datasheet

1 pages,
77.69 Kb

AD822A ad821 transistor datasheet abstract
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- MAX (mA) KIND Y FS (ms) KIND I G (mA) -V(P)GS (V) Y FS (ms) CRS (pF) V DS @ max. (V) -V(P)GS (V) CRS (pF) I DSS MIN - MAX (mA) I DSS MIN - MAX (mA) KIND Y FS (ms) I G (mA) CRS (pF) V DS @ max. (V) -V(P transistors 25 0.2 to 1.5 General purpose amplifiers
www.datasheetarchive.com/files/philips/pip/bft46_cnv_2-v1.html
Philips 14/02/2002 7.45 Kb HTML bft46_cnv_2-v1.html
V DSS (V) I D (A) P D (W) (Ta=25 o C) R DS (on)Typ.( W ) Package V GS =4V V GS =10V Switching 2SK2731 2SK2731 2SK2731 2SK2731 30 0.2 0.2 ) P D (W) (Ta=25 o C) R DS (on)Typ.( W ) Package V GS =2.5V V GS 0.1 0.2 7 5 UMT3 EM6K1 30 0.1 0.15 2.2 SST3 RK7002A RK7002A RK7002A RK7002A 60 0.3 0.2 1.1 0.7 SST3
www.datasheetarchive.com/files/rohm/products/shortform/21trstr/trstr1.html
Rohm 05/02/2002 28.51 Kb HTML trstr1.html
) Efficiency (%) DESCRIPTION Frequency (MHz) Frequency (MHz) V DS @ max. (V) G p (dB) P L (W) V DS @ max. (V) DESCRIPTION P L (PEP) (W) V DS @ max. (V) P L ) BLF177 BLF177 BLF177 BLF177 HF/VHF power MOS transistor 02-Jul-98 Product Specification 20 HF/VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged
www.datasheetarchive.com/files/philips/pip/blf177_3-v1.html
Philips 14/02/2002 10.24 Kb HTML blf177_3-v1.html
Min. Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 100 V 0.2 mA I CEO Collector Voltage I C = 1 A I B = 0.2 A 0.7 V V BE * Base-Emitter Voltage I C = 1 A V CE = 4 V 1.3 V h FE * DC Current Gain I C = 0.2 A V CE = 4 V I C = 1 A V CE = 4 V 40 15 h fe Small Signal Current Gain I C = 0.2 A V CE = 10 V f = 1MHz I C = 0.2 A V CE = 10 V f = 1KHz 3 BD239C BD239C BD239C BD239C NPN SILICON POWER TRANSISTOR Document Number: 4190 Date Update: 19
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4190-v2.htm
STMicroelectronics 14/06/1999 4.35 Kb HTM 4190-v2.htm
= 0) V CE = 100 V 0.2 mA I CEO Collector Cut-off Current (I B = 0) V CE = 60 V 0.3 mA I I B = 0.2 A 0.7 V V BE * Base-Emitter Voltage I C = 1 A V CE = 4 V 1.3 V h FE * DC Current Gain I C = 0.2 A V CE = 4 V I C = 1 A V CE = 4 V 40 15 h fe Small Signal Current Gain I C = 0.2 A V CE = 10 V f = 1MHz I C = 0.2 A V CE = Datasheet NPN SILICON POWER TRANSISTOR
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4190.htm
STMicroelectronics 20/10/2000 6.44 Kb HTM 4190.htm
CE = 100 V 0.2 mA I CEO Collector Cut-off Current (I B = 0) V CE = 60 V 0.3 mA Voltage I C = 1 A I B = 0.2 A 0.7 V V BE * Base-Emitter Voltage I C = 1 A V CE = 4 V 1.3 V h FE * DC Current Gain I C = 0.2 A V CE = 4 V I C = 1 A V CE = 4 V 40 15 h fe Small Signal Current Gain I C = 0.2 A V CE = 10 V f = 1MHz I C = 0.2 A V CE = 10 V f = 1KHz 3 20
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4190-v3.htm
STMicroelectronics 25/05/2000 6.17 Kb HTM 4190-v3.htm
) * Collector-Emitter Saturation Voltage I C = 0.2 A I B = 40 mA I C = 0.3 A I B = 75 mA I C = 0.4 A I B = 135 mA 0.2 0.3 0.4 0.5 1.0 1.5 V V V V BE(sat) * Base-Emitter Saturation Voltage I C = 0.2 A * DC Current Gain I C = 0.2 A V CE = 5 V I C = 0.4 A V CE = 5 V 10 5 30 20 t f INDUCTIVE LOAD Fall Time I C = 0.2 A
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7233-v1.htm
STMicroelectronics 03/10/2000 6.42 Kb HTM 7233-v1.htm
mH 400 V V CE(sat) * Collector-Emitter Saturation Voltage I C = 0.2 A I B 0.2 0.3 0.4 0.5 1.0 1.5 V V V V BE(sat) * Base-Emitter Saturation Voltage I C = 0.2 A Gain I C = 0.2 A V CE = 5 V I C = 0.4 A V CE = 5 V 10 5 30 20 t f INDUCTIVE LOAD Fall Time I C = 0.2 A V clamp = 300 V I B1 = C = 0) 9 V I C Collector Current 0.75 A I CM Collector Peak Current (t p < 5 ms) 1.5 A I
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7233.htm
STMicroelectronics 20/10/2000 6.71 Kb HTM 7233.htm
(ms) -V(P)GS (V) KIND V DS (V) 0.2 to 1.5 5 1,5 BFT46 BFT46 BFT46 BFT46 N-channel silicon FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film
www.datasheetarchive.com/files/philips/pip/bft46_cnv_2-v3.html
Philips 05/12/2000 6.35 Kb HTML bft46_cnv_2-v3.html
R DS(on) (mOhm) Technology @ V GS (V) V DS (V) I DS (A) 8 (N) / 17 (P) N-/P-channel 10 300 0.3 (N) / 0.2 (P PHC2300 PHC2300 PHC2300 PHC2300 Complementary enhancement mode MOS transistors One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8
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Philips 27/12/2000 6.59 Kb HTML phc2300_2-v1.html