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BCV26_L99Z Fairchild Semiconductor Corporation PNP Darlington Transistor ri Buy
KSA1156OSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy
KSA1156YSTSTU_NL Fairchild Semiconductor Corporation PNP Silicon Transistor ri Buy

transistor P 0.2 V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: it » -*» « Photo Transistor a « T -V /- 7 3 Lens Appearance Clear Colored Clear Colored , , M U ì È W v s f cY 4 > ? 7 7 ° ? T t o P - 76 m C W « C T 1 , m « £ *M H 0 Drawing No. P-83 P-84 P-85 P-86 4 tt Ä If mA m m 5 "J V X ^ r k , 50 50 , FEATU RE S S P I - 1 4 0 x ' lê^^GaAsi^^LEDè-, ÍC Si * V h 7 > i > x ? * x · Use o f G aA s infrared , rSA N Y O S E M IC O N D U C T O R CORP 7b D Ë J 7=1^7071= D O O a S l? S p ... OCR Scan
datasheet

4 pages,
406.41 Kb

SPI 226 SPI-140-03 spi105 spi140 sanyo p85 SPI204 SPS-103 transistor 306 x transistor 86 y transistor 86 y 87 transistor p83 transistor P84 transistor ti p80 SPI140-01 p83 transistor transistor p89 transistor p85 p88 transistor sps transistor transistor p86 TEXT
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Abstract: 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (2) v OU T (V) 'O U T (m A ) CLAM P , Transistor Arrays B i p o l a r |Tra n s i st o r| rray| (40Series, 226Devices) TTL TD62 xxx P O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F CP ~35V 50V 80V 100 V 19 [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (1) v OUT (V ) 107 107 T D 62003P/PA 62003P/PA 107 117 107 117 107 107 TD 62003A P/ A PA TD 62004A ... OCR Scan
datasheet

24 pages,
552.3 Kb

A 107 transistor 62c852 TD62801P 62004f 62004A 62003F TEXT
datasheet frame
Abstract: -P o - 10 - 10 7 5 7 5 ■- ._ 3 _- '2 3 2 2 V e c i = V CO î= = 1 2 .5 V 1 1 0.7 P in — 5 m W 0 .5 T c = 25 C 0.7 0 .5 0 , ‰ Pin (d B m ) -» ■ 1st DC SU P PLY VOLTAGE Veci (V) OUTPUT POW ER, EACH CURRENT VS. 1st DC SUPPLY VOLTAGE 1st D C SU P PLY VOLTÀGE Veci (V) A MITSUBISHI ELECTRIC 3 2 V , IN P U T P O W E R j * / 2 7 5 ,2 _ i — — —■ 3 3 = V c c i = V c ... OCR Scan
datasheet

3 pages,
82.33 Kb

TEXT
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Abstract: temperature of the third stage transistor = Tj3 = ( V CC2 x Its - P o3 + P 0 2 ) x R th (j-c )3 + Tc , transistor Tj4 = (V C C 2 x l T 4 - PQ 4 + P 0 3 ) x R th (j-c )4 + Tc = (12.5 x 0.43 - 2 + 0.5) x 9 + Tc , ® V c c i : 1 s t. D C S U P P L Y ® V c c 2 : 2nd. DC S U P P L Y ® V c c 3 : 3 rd . D C S U P , otherwise noted) Symbol VCC1.2 VCC3 Ico Pin(m ax) P o(m ax) TC(OP) Tstg N o te . A b o v e , . A b o v e Vcci = Vcci = 8V, Vcc3 = 12.5V P in = 1mW Z g = Z l = 50 Q Load VSWR tolerance ... OCR Scan
datasheet

3 pages,
85.94 Kb

0D17ST3 TEXT
datasheet frame
Abstract: Ports S, K, P, M, SO and A pull-down transistor input resistance VDD­0.2 V 0.2 VDD­0.2 V , 0 to maximum generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage , generated voltage V Ports K, P, SO and A, and CUP1, CUP2, SEG1 to SEG 35 and COM1 to COM4 output , to +13 V Ports N output current range IO1 ­10 to +15 mA Ports K, P, M, SO and A , 0.25VDD 25VDD 0.75VDD 75VDD V VDD V Ports K, P, M, SO and A output low-level voltage Ports K, P, M ... SANYO Electric
Original
datasheet

16 pages,
201.51 Kb

KBR-800H KBR-1000H KBR800H ENN3410C LC58E68 TEXT
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Abstract: P U T © V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d , 5°C 0.3 MHz ■Vb b —8 V if h "P in — 5 mW T c = 25 °C ' 0.11 0.2 , transistors are shown in Table 1. • Junction temperature of the first stage transistor Tjn = (V CCi x Ix i , temperature of the second stage transistor T j2 = ( V c c i • Table 1 : The conditions at standard , the third stage transistor T]3 = (V c c 2 x I t 3 _ ^ 0 3 + P0 2 ) x ^ th (j-c )3 + T c = (12.5 X ... OCR Scan
datasheet

3 pages,
92.54 Kb

M57789 TEXT
datasheet frame
Abstract: Maximum Ratings N = NPN P = PNP VCE0 [V] IC [mA] IC VCE [mA] [V] f Gma,Gms [MHz] [dB , N = NPN P = PNP Maximum Ratings BFR193L3 BFR193L3 BFR340L3 BFR340L3 BFR360L3 BFR360L3 BFR380L3 BFR380L3 VCE0 [V] 12 6 6 , Booster Transistor [V] [mA] [mA] [V] Protection Features Package Family Overvoltage , N = NPN P = PNP BF517 BF517 BF770A BF770A BF771 BF771 BF775 BF775 BF799 BF799 BF799W BF799W BFG135A BFG135A BFG193 BFG193 BFG196 BFG196 BFG19S BFG19S , BFR360F BFR360F BFR380F BFR380F BFR92P BFR92P BFR92W BFR92W BFR93A BFR93A BFR93AW BFR93AW BFS17P BFS17P BFS17S BFS17S BFS17W BFS17W BFS481 BFS481 BFS483 BFS483 VCE0 [V] 15 ... Infineon Technologies
Original
datasheet

120 pages,
5860.08 Kb

RK44LF Fairchild Cross Reference MOSFET TRANSISTOR SMD MARKING CODE nh smd transistor 24 sot23 Transistor SMD SOT363 SC70 Motorola transistor smd marking codes toshiba smd marking code transistor semiconductor cross reference TRANSISTOR S1A 64 smd 1N4148 SOD323 2n2222 sot23 TRANSISTOR SMD CODE PACKAGE SOT23 1N4148 SMD LL-34 TRANSISTOR SMD MARKING CODE s2a 2n2222a SOT23 TEXT
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Abstract: 10mA QUAD COLLECTOR CONTACT FEATURES Four Collector Contacts Matched V b e and hpE Transistor , for Reduced Noise Dual Collector Contacts Matched V b e and hpp transistor parameters TYPICAL , of Vp 1s satisfied by tvp (2) “VF (1) * * Z 'iVF(MAX)' w* ere VF(1) #mi ' V p ^ ) are any two , ; therefore, V z 1s tested at lyA and 10m A for each transistor. Operation at higher current has been fully , Transistor with Clamp (Notes 2,3) JCB0 T a =125°C V Collector-Emitter Leakage Current ICE0 ... OCR Scan
datasheet

47 pages,
1384.28 Kb

TEXT
datasheet frame
Abstract: generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage range V|2 -0.3 to Vdd + 0.3 V XTOUT and CFOUT output voltage range • Voi 0 to maximum generated voltage V Ports K, P, SO and , IXA Porte S, K, P, M, SO and A, and INT LOW-level input voltage Vili 0 - 0.3Vdd V Ports S, K, P, M , , SO and A LOW-level output voltage VoL2 Iol = 400 nA - 0.2 0.5 V Ports K, P, M, SO and A HIGH-level , to COM4 HIGH-level output voltage VoHfl Ioh = -100 na Vdd - 0.2 - - V Ports S, K, P, M, SO and A ... OCR Scan
datasheet

19 pages,
461.98 Kb

LC58E68 LC5864H LC5863H mp 3410 KBR-1000H 3410C TEXT
datasheet frame
Abstract: VCC2 = 1 2.5V -V bb — í V r P in = 5 mW / 1 t/ 1 " — 0 01 00 I 3 ■c 2 , ( V c c 2 X It 3 ~ ^ 0 3 + P o 2 ) x ^ t h ( j - c ) 3 + T c = ( 1 2 .5 x 0 .2 8 -1 .3 + 0 .4 ) x 15 + TC = 39.0 + T c (°C) Junction temperature of the fourth stage transistor T j4 = ( V c c 2 x , = 45.9 + Tc (°C) Junction temperature of the final stage transistor Tjs = ( V c c 3 x I t B - , temperature of the first stage transistor • T jl = (V cci X ^T1 _ Poi + Pin) x R th (j-c)! + T c*Note ... OCR Scan
datasheet

3 pages,
94.64 Kb

M57789 TEXT
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Archived Files

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Package SOT23 (SST3)@package/SOT23.html -V(P)GS (V) typ. 0.8 V DS max (V) 20 Y FS Package SOT23 (SST3)@package/SOT23.html -V(P)GS (V) typ. 1.5 V DS max (V) 20 Y FS Package SOT23 (SST3)@package/SOT23.html -V(P)GS (V) typ. 2.2 V DS max (V) 20 Y FS Package SOT23 (SST3)@package/SOT23.html -V(P)GS (V) typ. 3 V DS max (V) 20 Y FS (ms /SOT23 /SOT23.html -V(P)GS (V) V DS max (V) 25 Y FS (ms) 1 to 4
/datasheets/files/philips/catalog/parametrics/15.html
Philips 25/04/2003 325.82 Kb HTML 15.html
) POLARITY NPN P tot (MW) 9000 V CE (V) 15 Category Transistor wideband NPN up to 6 stages I DSS MIN - MAX(mA) 0.7 to 3 I G (mA) 10 Y FS (ms) 2.5 -V(P)GS(V BF511 BF511 V DS @ max.(V) 20 I G (mA) 10 -V(P)GS(V) typ. 1.5 CRS(pF) 0.4 Y transistors BF512 BF512 I DSS MIN - MAX(mA) 6 to 12 -V(P)GS(V) typ. BF513 BF513 -V(P)GS(V) typ. 3 Y FS (ms) 7 CRS(pF) 0.4 I G (mA) 10 I DSS MIN
/datasheets/files/philips/catalog/parametrics/15-v1.html
Philips 21/01/2002 257.07 Kb HTML 15-v1.html
Storage Time Fall Time V CC = 100 V I C = 70 A I B1 = - I B2 = 7 A t p = 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 E B R C D A P G N V U O ST | HIGH POWER NPN SILICON TRANSISTOR BUT90 BUT90 HIGH POWER NPN SILICON TRANSISTOR Document Number: 5083 Date Update: 30/04 Document Format and Raw Text Format BUT90 BUT90 HIGH POWER NPN SILICON TRANSISTOR n ST
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5083-v2.htm
STMicroelectronics 14/06/1999 5.58 Kb HTM 5083-v2.htm
Emitter-Base Voltage (I C = 0, I B V CC = 125 V I C = 1 A I B1 = 0.2 A I B2 = -0.2 A T p = 30 m TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL118 BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY SCHEMATIC DIAGRAM May 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5639-v3.htm
STMicroelectronics 25/05/2000 8.08 Kb HTM 5639-v3.htm
Storage Time Fall Time V CC = 100 V I C = 70 A I B1 = - I B2 = 7 A t p = 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 E B R C D A P G N V U O ST | HIGH POWER NPN SILICON TRANSISTOR Datasheet HIGH POWER NPN SILICON TRANSISTOR BUT90 BUT90 Document Format SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH CURRENT CAPABILITY n FAST
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5083.htm
STMicroelectronics 20/10/2000 7.9 Kb HTM 5083.htm
) 9 V I C Collector Current 2 A I CM Collector Peak Current (t p < 5 ms) 4 A I B Base Current 1 A I BM ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULT118D BULT118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 4830 Date Update TRANSISTOR n NPN TRANSISTOR n INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE n HIGH VOLTAGE CAPABILITY n FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4830-v2.htm
STMicroelectronics 14/06/1999 5.79 Kb HTM 4830-v2.htm
Emitter-Base Voltage (I C = 0) 9 V I C Collector Current 4 A I CM Collector Peak Current (t p < 5 ms TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL128FP BUL128FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD SCHEMATIC DIAGRAM April 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5773-v3.htm
STMicroelectronics 25/05/2000 7.75 Kb HTM 5773-v3.htm
= 100 V I C = 70 A I B1 = - I B2 = 7 A t p = 30 m s V CC = 100 V I C = 70 A I B1 = - I B2 = 7 A t p = 30 V 30.00 30.30 1.187 1.193 E B R C D A P G N V U O P003O P003O TO-3 (version S) MECHANICAL ST | HIGH POWER NPN SILICON TRANSISTOR Datasheet HIGH POWER NPN SILICON TRANSISTOR BUT90 BUT90 Document Format
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5083-v3.htm
STMicroelectronics 25/05/2000 7.4 Kb HTM 5083-v3.htm
MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0, I B TRANSISTOR Datasheet HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL118 BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5639.htm
STMicroelectronics 20/10/2000 8.5 Kb HTM 5639.htm
V I C = 2 A I B1 = 0.4 A I B2 = -0.4 A T p = 30 m s (see ST | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL128D-B BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Document Number: 6355 Date Update TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD : n ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6355-v1.htm
STMicroelectronics 02/04/1999 6.2 Kb HTM 6355-v1.htm