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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor P 0.2 V

Catalog Datasheet MFG & Type PDF Document Tags

transistor p86

Abstract: sps transistor it » -*» « Photo Transistor a « T -V /- 7 3 Lens Appearance Clear Colored Clear Colored , , M U ì È W v s f cY 4 > ? 7 7 ° ? T t o P - 76 m C W « C T 1 , m « £ *M H 0 Drawing No. P-83 P-84 P-85 P-86 4 tt Ä If mA m m 5 "J V X ^ r k , 50 50 , FEATU RE S S P I - 1 4 0 x ' lê^^GaAsi^^LEDè-, ÍC Si * V h 7 > i > x ? * x · Use o f G aA s infrared , rSA N Y O S E M IC O N D U C T O R CORP 7b D Ë J 7=1^7071= D O O a S l? S p
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62003F

Abstract: 62004f 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (2) v OU T (V) 'O U T (m A ) CLAM P , Transistor Arrays B i p o l a r |Tra n s i st o r| rray| (40Series, 226Devices) TTL TD62 xxx P O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F CP ~35V 50V 80V 100 V 19 [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (1) v OUT (V ) 107 107 T D 62003P/PA 107 117 107 117 107 107 TD 62003A P/ A PA TD 62004A
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62003F 62004f 62004A TD62801P 62004AP TD62XXX 62003F/FB/ 62004F/FB/ 62004P/PA DIP20 62C852P 10UT1
Abstract: -P o - 10 - 10 7 5 7 5 â - ._ 3 _- '2 3 2 2 V e c i = V CO î= = 1 2 .5 V 1 1 0.7 P in â'" 5 m W 0 .5 T c = 25 C 0.7 0 .5 0 , ‰ Pin (d B m ) -» â  1st DC SU P PLY VOLTAGE Veci (V) OUTPUT POW ER, EACH CURRENT VS. 1st DC SUPPLY VOLTAGE 1st D C SU P PLY VOLTÃ'GE Veci (V) A MITSUBISHI ELECTRIC 3 2 V , IN P U T P O W E R j * / 2 7 5 ,2 _ i â'" â'" â'"â  3 3 = V c c i = V c -
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M57789 889-915MH
Abstract: temperature of the third stage transistor = Tj3 = ( V CC2 x Its - P o3 + P 0 2 ) x R th (j-c )3 + Tc , transistor Tj4 = (V C C 2 x l T 4 - PQ 4 + P 0 3 ) x R th (j-c )4 + Tc = (12.5 x 0.43 - 2 + 0.5) x 9 + Tc , ® V c c i : 1 s t. D C S U P P L Y ® V c c 2 : 2nd. DC S U P P L Y ® V c c 3 : 3 rd . D C S U P , otherwise noted) Symbol VCC1.2 VCC3 Ico Pin(m ax) P o(m ax) TC(OP) Tstg N o te . A b o v e , . A b o v e Vcci = Vcci = 8V, Vcc3 = 12.5V P in = 1mW Z g = Z l = 50 Q Load VSWR tolerance -
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0D17ST3 M57793 903-905MHZ

KBR800H

Abstract: KBR-800H Ports S, K, P, M, SO and A pull-down transistor input resistance VDD­0.2 V 0.2 VDD­0.2 V , 0 to maximum generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage , generated voltage V Ports K, P, SO and A, and CUP1, CUP2, SEG1 to SEG 35 and COM1 to COM4 output , to +13 V Ports N output current range IO1 ­10 to +15 mA Ports K, P, M, SO and A , 0.25VDD 0.75VDD V VDD V Ports K, P, M, SO and A output low-level voltage Ports K, P, M
SANYO Electric
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KBR800H KBR-800H KBR-1000H ENN3410C LC58E68 LC586X
Abstract: P U T © V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d , 5°C 0.3 MHz â Vb b â'"8 V if h "P in â'" 5 mW T c = 25 °C ' 0.11 0.2 , transistors are shown in Table 1. â'¢ Junction temperature of the first stage transistor Tjn = (V CCi x Ix i , temperature of the second stage transistor T j2 = ( V c c i â'¢ Table 1 : The conditions at standard , the third stage transistor T]3 = (V c c 2 x I t 3 _ ^ 0 3 + P0 2 ) x ^ th (j-c )3 + T c = (12.5 X -
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2sc3052ef

Abstract: 2n2222a SOT23 Maximum Ratings N = NPN P = PNP VCE0 [V] IC [mA] IC VCE [mA] [V] f Gma,Gms [MHz] [dB , N = NPN P = PNP Maximum Ratings BFR193L3 BFR340L3 BFR360L3 BFR380L3 VCE0 [V] 12 6 6 , Booster Transistor [V] [mA] [mA] [V] Protection Features Package Family Overvoltage , N = NPN P = PNP BF517 BF770A BF771 BF775 BF799 BF799W BFG135A BFG193 BFG196 BFG19S , BFR360F BFR380F BFR92P BFR92W BFR93A BFR93AW BFS17P BFS17S BFS17W BFS481 BFS483 VCE0 [V] 15
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG235 BFP181 BFP181R BFP182 BFP182R BFP182W
Abstract: 10mA QUAD COLLECTOR CONTACT FEATURES Four Collector Contacts Matched V b e and hpE Transistor , for Reduced Noise Dual Collector Contacts Matched V b e and hpp transistor parameters TYPICAL , of Vp 1s satisfied by tvp (2) â'VF (1) * * Z 'iVF(MAX)' w* ere VF(1) #mi ' V p ^ ) are any two , ; therefore, V z 1s tested at lyA and 10m A for each transistor. Operation at higher current has been fully , Transistor with Clamp (Notes 2,3) JCB0 T a =125°C V Collector-Emitter Leakage Current ICE0 -
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1250C T-42-21

mp 3410

Abstract: 3410C generated voltage V Ports S, K, P, SO and A, and RES, INT and TST input voltage range V|2 -0.3 to Vdd + 0.3 V XTOUT and CFOUT output voltage range â'¢ Voi 0 to maximum generated voltage V Ports K, P, SO and , IXA Porte S, K, P, M, SO and A, and INT LOW-level input voltage Vili 0 - 0.3Vdd V Ports S, K, P, M , , SO and A LOW-level output voltage VoL2 Iol = 400 nA - 0.2 0.5 V Ports K, P, M, SO and A HIGH-level , to COM4 HIGH-level output voltage VoHfl Ioh = -100 na Vdd - 0.2 - - V Ports S, K, P, M, SO and A
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3410C mp 3410 LC5863H LC5864H CSB800J CSB1000J
Abstract: VCC2 = 1 2.5V -V bb â'" í V r P in = 5 mW / 1 t/ 1 " â'" 0 01 00 I 3 â c 2 , ( V c c 2 X It 3 ~ ^ 0 3 + P o 2 ) x ^ t h ( j - c ) 3 + T c = ( 1 2 .5 x 0 .2 8 -1 .3 + 0 .4 ) x 15 + TC = 39.0 + T c (°C) Junction temperature of the fourth stage transistor T j4 = ( V c c 2 x , = 45.9 + Tc (°C) Junction temperature of the final stage transistor Tjs = ( V c c 3 x I t B - , temperature of the first stage transistor â'¢ T jl = (V cci X ^T1 _ Poi + Pin) x R th (j-c)! + T c*Note -
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890-915MH
Abstract: stage transistor â'¢ Tj i = ( V CC x IT1 - P 01 + P i n ) x R t h i j - c i + T c (Note4) = ( 1 2 , temperature o f final stage transistor T j 2 = ( V CC x I t 2 â' Po + P o i ) x R t h ( j ~c)2 + T c = , T c â'" 25'C V c c =- 1 2 . 5 ' / P in = 0 .3 W Z L= 5 20 hz UJ cr 5 10 K . 232 O , CURRENT VS. INPUT POWER cr < V INPUT POWER P in (W ) - SUPPLY VOLTAGE VCC1=VCC2 ( V , CURRENT, VS. FIRST VOLTAGE 100 Tc = 25'C V c c 2 = 1 2 .5 V 50 - f = 2 30 M H z P in = 0 . 3W 30 -
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M57774 220-225MH 220-225MHZ

transistor 12w

Abstract: M57789 firs t stage transistor T ji = ( V c c i X I t j " P o 1 + Pin ) x ^ t h ( j - c ) 1 + T C * Nota 1 , / V A i ,P L - TV 1C v' 5`C £> 0.3 0.2 0.1 12 0.1 0.07 0.05 If / 10 , (Typ.) c) Third stage transistor P th (j-c )3 ~ 15°C/W (Typ.) d) Fourth stage transistor R th(i-c)4 = 7.50C/W (Typ.) e) Final stage transistor Rth , second stage transistor T j2 = W CC1 x *T2 " P 0 2 + P o l i x ^ t h ( j~ c ) 2 + T c · · =
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transistor 12w

BULD85KC

Abstract: BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t© 1997, Power Innovations , INNOVATIONS P BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE M AY 1994 - REVISED SEPTEM BER , Typically 1 |j s TO-220 PACKAGE (TOP VIEW) B C C C E C Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running , transistor. The integrated diode has m inim al charge coupling with the transistor, increasing frequency
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Abstract: Tc (°C) Junction temperature of the fourth stage transistor Tj4 = ( V C C 2 X l T 4 - P 0 4 + P 0 , 0.2 0.02 0.1 2nd STAGE DC SUPPLY V O L TA G E V CC2 (V) IN P U T POWER Pin {dBm} OUTPUT , . Junction temperature of the first stage transistor T ji = (V CC1 x IT1 - P0 i + Pin) x Rth(i. c)i + Tc , Dimensions in mm PIN ; © P in : RF INPUT ®VCC1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY , unless otherwise noted) Symbol Voci VCC2 VCC3 Icc Pin(max) Po(m ax) T c (O P ) T s tg -
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905MH

TH 2190 Transistor

Abstract: transistor Tj3 = (V CC2 â'¢ (2 ) V p c , I t . input & output power conditions at stand­ ard , OUTLINE DRAWING Dimensions in mm P IN : © P in : RF IN P U T ® V c c i : 1 s t. D C S U , V S . IN P U T PO W E R O U T P U T P O W E R , EACH C U R R E N T V S . FR E Q U E N C Y 10 7 , FREQUENCY IN P U T P O W E R Pin (d B m ) f (M H z ) O U T P U T P O W E R , EACH C U R R E N T V S . 2nd DC SU P P L Y VOLTAGE 10i i . . O U T P U T P O W E R , EAC H C U R R E N T V S
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TH 2190 Transistor DG17E M57791

cb pj 47 diode

Abstract: b MODE OF OPERATION f (GHz) VCE (V) Icq (A) P li (W) Gpo (dB) TIC (% , OPERATION f (GHz) VCE (V) Icq (A) P li (W) Gpo (dB) TIC (%) Z|/ZL (O) class , N AUER PHILIPS/DISCRETE b^E J > bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ , transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. Fig
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cb pj 47 diode S3T31 DD3227 LFE15600X 15600X
Abstract: verter and a current source type output section. The output section is composed of a P N P transistor and an N PN Darlington transistor, w ith the base cu rren t of the P N P transistor con stant. A clamp , transistor a rra y is suitable for drivin g replays, p rin ters, L E D fluorescent display tubes and lamps as , 30 4 -U n it 400m A Transistor Array IR 2C26 Absolute Maximum Ratings Param eter S u p p , time of loi T v ,N v, i, P[. A P, °C T ., T.K Ta £ 25 C T a > 2 5 °C ! output being "H " Svm bol -
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IR2C26

486DX-CPU

Abstract: tamagawa Voltage (V) N+ Gate P- Substrate Figure 4: Direct tunneling leakage mechanism for thin SiO2 As , 0.4 0.4 0.4 0.4 0.3 0.3 C Miller 0.2 0.2 0.2 0.2 C Miller = C O v e r l a p +C F r , Scaling: Transistor Challenges for the 21st Century 0.4 0.5 VTP (V) 0.6 0.7 9 Intel , MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology , Technology Development, Intel Corp. Index words: SDE, transistor, scaling Table 1: Fundamental scaling
Intel
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486DX-CPU tamagawa 486DX retrograde well 0.35 transistors mos

BFR740F

Abstract: ultra low noise RF Transistor A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ' s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s , Transistor in TSFP-4 package is shown in a +3.0 V 2.33 GHz LNA application. Amplifier draws 8.9 mA. +5 V , 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF
Infineon Technologies
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BFR740F ultra low noise RF Transistor sdars infineon b 58 468 11 A 122 transistor application note no. 122

IR TRANSISTOR

Abstract: 876A +) 1 ftrf V cc-S V T a-2 8 C nS TYP V c c * 6.26V If-2 0 m A 0 /P » Q N D tDtfl V cc-S V lf - 0 V o , - 1 0 m A C I- S 0 P F R 1- 390 US MIN 0.5 0.5 0.5 M S MAX 5 5 5 f Dhl tr C I- 6 0 P F R1-390 V , |iA l e - 100gA V r - 3V* lf - 0 1 h- 0 nA IIA V V m u MAX MAX M IN P H V Y l Ir BVceo IV eco 30 tr , -40mA Ic-lOOuA *0-0.200' V MAX 0.4 Vceitol) lf-40mA Ic-S p A ·0-0.150* V MAX 8 Outoul i | PK611 , Optolink Ltd Optical Switches ChanetorM te ic o n Ic O F F V c* A t Shown H -0 IO N | 1OFF
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IR TRANSISTOR 876A H21A1 H21A2 B13S3 813S5 813S7 H21B1
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