NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PUMF11 T/R | NXP Semiconductors | NPN resistor-equipped transistor; PNP general purpose transistor | 
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| PUMF12 T/R | NXP Semiconductors | PNP general purpose transistor; NPN resistor-equipped transistor |
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| PMBT4403Z | NXP Semiconductors | PMBT4403 - PNP switching transistor |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: INFRARED EMITTING DIODES NTE TVpe Number Description Diagram Number Typical Total External , ton.'off 3017 High Speed for Remote Control 141 15 1.28 6 100 175 900 500 3027 PN Gallium Arsenide 144 1 , Bi-Directional 460 2 1.5 6 50 75 950 - INFRARED DETECTOR DIODES NTE Type Number Description Diagram Number , Infrared Pin Photodiode 437 30 50 35 100 50 65 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description , 590 35(Vceo) 50 10MA@10VVCE 10VVCE 0.2 75 400 - PHOTON COUPLED INTERRUPTER MODULE NTE Type No. Output ... | OCR Scan |
1 pages, |
T046 650nW GALLIUM ARSENIDE ir detector NPN 200 VOLTS POWER TRANSISTOR npn 940 3035A SWITCHING TRANSISTOR 144 T018 photo interrupter module Si pin photodiode module darlington IR phototransistor photon coupled interrupter nte 3100 npn phototransistor npn datasheet abstract |
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| Abstract: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External , (xW 2 2 VF 1.28 1.5 1.5 1.5 1.5 1.5 6 5 3 If 100 100 150 100 50 50 Pd 175 150 250 100 75 75 900 950 900 940 950 950 toni 500 400 50 1ns - 6 6 6 INFRARED DETECTOR DIODES NTE Type , 100 V 50 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description Diagram Number Collector , 45 15 20 PHOTON COUPLED INTERRUPTER MODULE Maximum Emitter Specification» NTE Type No. Reverse ... | OCR Scan |
1 pages, |
NPN Transistor 5V DARLINGTON TRANSISTOR 2SC 950 phototransistor npn datasheet abstract |
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| Abstract: driver SOP DIP DIP/SOP DIP/SOP DIP/SOP SSOP 8 8 8 8 8 16 R equires external pow er transistor; R equires external pow er transistor; Io m a x Io m a x = 70m A = 70m A N 0.3121A N 0.3121A N o.3121A N 0.3121A - No. 3246 R equires external pow er transistor; bult-in auto reset circuit; Io m a x = 70m A R equires external pow er transistor; built-in auto reset circuit; I o m a x = 70mA Built-in pow er transistor and auto reset circuit, I o m a x = 1A; lock-u p dete ction output Built-in pow er transistor and ... | OCR Scan |
3 pages, |
BA-4113 BA6474FP BA6473FP-Y BA631 BA-4114 BA6600K ba6607k ba8215 PH 33m POWER LINE FM INTERCOM servo circuit BA6476FP transistor intercom circuit BA6571A datasheet abstract |
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| Abstract: + IVO I , regulated by controlling the power transistor switch current; this maintains a constant charge on the output , OPERATION V SAT V, 'lo ad VL Power Transistor Saturation Voltage Diode Forward Voltage Drop , ) Where: Output Voltage is as follows: *ON = And: ^ · off = L x [lLPK / (|VOUT| + V F)] where: Vref = 1.28 , maximum inductor current is limited by the power transistor switch capacity: lLPK(MAX) ~ 3 ° ° mA- X ... | OCR Scan |
13 pages, |
TK11830 TK11830 abstract |
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| Abstract: Semiconductors Integrated Circuits Integrated Circuits (cont.) Part Number Description NTE40175B NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B NTE4018B IC-CMOS, Presettable Divide-By-"N" Counter NTE4001B NTE4001B IC-CMOS, Quad 2-Input NOR Gate NTE4019B NTE4019B IC-CMOS, Quad AND/OR Select Gate NTE4001BT NTE4001BT IC-CMOS, Quad 2-Input NOR Gate (Surface Mount ... | Original |
43 pages, |
NTE7400 NTE74HC165 NTE4027BT NTE74HCT273 NTE4011B 7 SEGMENT DISPLAY 5022a NTE74HC374 NTE4051B NTE7493A NTE4093BT NTE4020B NTE4026B NTE4023B NTE4027B NTE40175B NTE4017B NTE40175B abstract |
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| Abstract: PIN NAME R e s e t transistor drain O u tput transistor drain < t >RS ¿V1, ^V2, 4 >V3, ^V4 0H1. 0H2 OFD PW AGND CGND T 1, T 2 R e s e t transistor g a te c lo c k V ertical shift register g a te , lo c k part ground T e s t term inal ABSOLUTE MAXIMUM RATINGS PARAMETER O u tput transistor drain voltage R e s e t transistor drain voltage O verflow drain voltage T e s t te rm in al, T i T e s , transistor drain voltage R e s e t transistor drain voltage O verflow drain v oltage W h e n D C is applied W ... | OCR Scan |
8 pages, |
LZ2324AK LZ2324AK abstract |
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| Abstract: N.C. Not connected â- S235b05 011Ab23 SEI â- Semiconductor Group 128 1998-11-01 This Material , proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation , Reset Delay Voltage Vd -0.3 42 V . Current h - - nte"1 ally limited Output Voltage VQ , 4.5 4.8 V VRE = 0 V Switching voltage 1.28 1.35 1.42 V VQ > 3.5 V Saturation voltage vB - 0.10 0.40 , â- tjyuuuyi 12.8, 1) 10 Index Marking 1) Does not Include plastic or metal protrusions of 0.15 max per ... | OCR Scan |
15 pages, |
235L 6 pin TRANSISTOR SMD CODE XI AEB01081 AEP01083 AEP02588 C160 KL15 MARKING CODE SMD IC O235 Q67006-A9068 Q67006-A9356 sei smd resistors smd code HF transistor smd marking XF Q67006-A9068 abstract |
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| Abstract: specification PNP 4 GHz wideband transistor BFT93W BFT93W FEATURES • High power gain • Gold metallization ensures , transistor for wideband applications up to 2 GHz. DESCRIPTION Silicon PNP transistor in a plastic, SOT323 , wideband transistor BFT93W BFT93W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134 , rs = ropt; lc = -10 mA; VCE = -5 V; f = 1 GHz 3 dB N°te |s21|2 1. Gum is the maximum unilateral , tTE ]> Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W BFT93W 400 ... | OCR Scan |
18 pages, |
transistor wideband marking 545 5b0 sot23 BFT93 BFT93W FC 0137 l3 sot323 marking code x1 transistor 1661 equivalent transistor BF 502 206 transistor specification sheet OA95 Transistor MJE 5331 TRANSISTOR D 5702 datasheet abstract |
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| Abstract: 5 80 80 ±12 ±10 + 12 5 100 100 ±13.4 ±12.8 ±14 7 15 7 50 0.002 0.9 0.53 5.5 4.5 0.7 120 0.65 8 MAX. , bias curren ts flo w o u t fro m IC. Because each curren ts are base c u rre n t o f PN P*transistor on , NOTES 1 1 Each lead ce nte rline is loca ted w ith in 0 .2 5 m m {0 .0 1 inch ) o f its tru e p osition (T .P .) at m axim um m a teria l co n d itio n . 2} Item "K " to ce nte r o f leads w h en fo rm e d ... | OCR Scan |
10 pages, |
upc4570 equivalent UC4570C pc4570HA IPC4570 cd 4558 NEC 4570 NTE 4558 datasheet abstract |
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| Abstract: transistor or a latched activity flag OVERVIEW The DS2407 DS2407 Dual Addressable Switch Plus M em ory provides , System". The functions required to read and w nte the data and status mem ory o f the DS24-G7 DS24-G7 and to access , starting byte location w ithin the data field. S ince the data m em ory contains 128 bytes, T15:T8 and T7 , using e ight w nte time slots. As the DS2407 DS2407 receives this byte of data into the scratchpad, it also , if the bus m aster transm itsa 1 (Wnte One Tim e Slot), th e output transistor of the selected ... | OCR Scan |
31 pages, |
DS2407 DS2407 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| No abstract text available www.datasheetarchive.com/download/57356131-744103ZC/stcd0695.dic |
SGS-Thomson | 12/05/1995 | 446.14 Kb | DIC | stcd0695.dic |