500 MILLION PARTS FROM 12000 MANUFACTURERS
500 MILLION PARTS FROM 12000 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| BCV26_L99Z | Fairchild Semiconductor Corporation | PNP Darlington Transistor | 
|
|
|
| KSA1156YSTSTU_NL | Fairchild Semiconductor Corporation | PNP Silicon Transistor |
|
|
|
| KSA1156OSTSTU_NL | Fairchild Semiconductor Corporation | PNP Silicon Transistor |
|
|
| Part | Manufacturer | Description | Last Check | Distributor | Ordering |
| TRANSISTOR | Fairchild Semiconductor | BULK / SEC PKG | 25 (Sep 2016) | New Advantage | |
| TRANSISTOR | FSC | BULK / SEC PKG | 25 (Sep 2016) | New Advantage | |
| TRANSISTOR | MICROSEMI | BULK / SEC. PKG | 45 (Sep 2016) | New Advantage | |
| TRANSISTOR | RAYTHEON | BULK / SEC PKG | 3 (Sep 2016) | New Advantage | |
| TRANSISTOR KIT | Jameco | 560 Piece Transistor Component Kit | 38 from $59.95 (Sep 2016) | Jameco Electronics | |
| TRANSISTOR-/TEMP-ADAPTER | Voltcraft | VOLTCRAFT® Transistor-/Temperatur-Messadapter, Passend für VOLTCRAFT® VC100-Serie | 118 from €6.16 (Sep 2016) | Conrad Electronic | |
| Catalog Datasheet | MFG & Type | Document Tags |
| Abstract: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External , (xW 2 2 VF 1.28 1.5 1.5 1.5 1.5 1.5 6 5 3 If 100 100 150 100 50 50 Pd 175 150 250 100 75 75 900 950 900 940 950 950 toni 500 400 50 1ns - 6 6 6 INFRARED DETECTOR DIODES NTE Type , 100 V 50 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description Diagram Number Collector , 45 15 20 PHOTON COUPLED INTERRUPTER MODULE Maximum Emitter Specification» NTE Type No. Reverse ... | OCR Scan |
1 pages, |
transistor 2sc SI 3105 A nte 3122 NPN Transistor 5V DARLINGTON phototransistor npn TRANSISTOR 2SC 950 TEXT |
|
|||
| Abstract: INFRARED EMITTING DIODES NTE TVpe Number Description Diagram Number Typical Total External , ton.'off 3017 High Speed for Remote Control 141 15 1.28 6 100 175 900 500 3027 PN Gallium Arsenide 144 1 , Bi-Directional 460 2 1.5 6 50 75 950 - INFRARED DETECTOR DIODES NTE Type Number Description Diagram Number , Infrared Pin Photodiode 437 30 50 35 100 50 65 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description , Cut-Off 590 35(Vceo) 50 10MA@10VVCE 10VVCE 0.2 75 400 â PHOTON COUPLED INTERRUPTER MODULE NTE Type No. Output ... | OCR Scan |
1 pages, |
T046 650nW GALLIUM ARSENIDE ir detector NPN 200 VOLTS POWER TRANSISTOR npn 940 3035A SI 3105 A T018 SWITCHING TRANSISTOR 144 photo interrupter module darlington IR phototransistor Si pin photodiode module photon coupled interrupter phototransistor npn photon coupled interrupter nte 3100 npn photon coupled interrupter 3101 TEXT |
|
|||
| Abstract: Transistor: 5A Load Current Capability D Programmable Switch: Manual Operation Can be Obtained D Pause , Plunger OFF ICC(ON) Pin2 Voltage Power Transistor Cutoff Current Current at Plunger ON , (2.0) .128 (3.2) Dia .276 (7.0) .433 (11.0) 1 10 .217 (5.5) .100 (2.54) .900 (22.8) NTE Electronics ... | NTE Electronics Original |
2 pages, |
transistor 5a NTE1478 icer capacitor "Solenoid Driver" TEXT |
|
|||
| Abstract: NTE341 NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead for high gain performance , = 136MHz 12.8 - j11 11 - j14.8 f = 175MHz Zcl 3.0 - j3.8 f = 155MHz Clamping , Emitter/Case 45° .031 (.793) NTE Electronics ... | NTE Electronics Original |
2 pages, |
NTE341 TEXT |
|
|||
| Abstract: NTE190 NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High CollectorEmitter Breakdown Voltage: V(BR , 300us. Duty Cycle 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia , ) Collector Connected to Tab NTE Electronics ... | NTE Electronics Original |
2 pages, |
NTE190 TEXT |
|
|||
| Abstract: ) .504 (12.8) 1 7 .209 (5.5) Min .100 (2.54) NTE Electronics , Symbol Saturation Voltage of the Vertical Output Transistor VV(sat)1 Note 3 0.3 0.5 1.0 , V Saturation Voltage of the PumpUp Output Transistor Output Current with No Input Center ... | Original |
43 pages, |
NTE74HC374 7 SEGMENT DISPLAY 5022a NTE4020B NTE74HCT273 NTE4051B NTE4093BT NTE4026B NTE7493A NTE4511B nte4584b NTE74HC165 NTE4553B NTE4027B NTE74HC4053 NTE4023B NTE4007 NTE4017B NTE74HC299 NTE4097B NTE74HC4067 TEXT |
|
|||
| Abstract: monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR , measured during the V(BR)CES test is the V(BR)CEO of the output transistor. Electrical Characteristics , (1.27) B .160 (4.06) E .280 (7.25) Max .128 (3.28) Dia .218 (5.55) NTE273 NTE273 Schematic C , (5.08) Collector Connected to Tab TO202N pF NTE Electronics ... | NTE Electronics Original |
2 pages, |
NTE7158 TEXT |
|
|||
| Abstract: (NTE7229 NTE7229) at current up to 0.5A and 12V at current up to 1A with an external PNP transistor. An internal , Output Current up to 1A with External Transistor (Output 3) D Fixed Precision Output 1 Voltage 5.1V +2% , (26.05) .128 (3.25) Dia .065 (1.65) .311 (7.9) .537 (13.65) 1 10 .350 (8.9) .276 (7.0) .100 (2.54) .020 (0.5) .020 (0.5) NTE Electronics ... | NTE Electronics Original |
2 pages, |
NTE273 NTE272 application note ic 555 npn darlington transistor 150 watts PNP Monolithic Transistor Pair ic 555 audio amplifiers TEXT |
|
|||
| Abstract: monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR , measured during the V(BR)CES test is the V(BR)CEO of the output transistor. Electrical Characteristics , (1.27) B .160 (4.06) E .280 (7.25) Max .128 (3.28) Dia .218 (5.55) NTE273 NTE273 Schematic C , ) Collector Connected to Tab TO202N pF NTE Electronics ... | NTE Electronics Original |
3 pages, |
NTE7228 NTE7229 TEXT |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
|
Byte up to 3 KByte Internal 128 or 256 Byte Special Function Register Internal 128/256 Bytes distinct blocks: the lower 128 byte of internal data RAM, the upper 128 byte of internal data RAM, and the 128 byte special function register (SFR) area. The lower internal data RAM and the SFR area further include 128 bit locations each. These bits can be handled by specific bit manipulation Semiconductor indirectly (e.g. MOV A,@R0 with address in R0). A bit-addressable area of 128 free programmable, direct
/datasheets/files/infineon/mc_data/dave/products/c504.dip |
Infineon | 01/02/2000 | 5668.08 Kb | DIP | c504.dip |
|
No abstract text available
/download/63482201-592495ZC/price-04.zip () |
NEDIS | 22/02/2001 | 1894.94 Kb | ZIP | price-04.zip |
|
No abstract text available
/download/59539157-592504ZC/price-11.zip () |
NEDIS | 28/02/2001 | 1026.63 Kb | ZIP | price-11.zip |
|
No abstract text available
/download/15008676-592499ZC/price-07.zip () |
NEDIS | 26/02/2001 | 1872.34 Kb | ZIP | price-07.zip |
|
No abstract text available
/download/4636711-592506ZC/price-13.zip () |
NEDIS | 28/02/2001 | 1026.63 Kb | ZIP | price-13.zip |
|
No abstract text available
/download/38266838-592491ZC/price-00.zip () |
NEDIS | 28/02/2001 | 1026.63 Kb | ZIP | price-00.zip |
|
No abstract text available
/download/24297679-592503ZC/price-10.zip () |
NEDIS | 23/02/2001 | 1817.66 Kb | ZIP | price-10.zip |
|
No abstract text available
/download/12785203-592508ZC/price-15.zip () |
NEDIS | 27/02/2001 | 1644.67 Kb | ZIP | price-15.zip |
|
No abstract text available
/download/71449995-592493ZC/price-02.zip () |
NEDIS | 23/02/2001 | 2050.48 Kb | ZIP | price-02.zip |
|
No abstract text available
/download/56556195-592510ZC/price-32.zip () |
NEDIS | 28/02/2001 | 1330.97 Kb | ZIP | price-32.zip |