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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor NTE 128

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR 2SC 950

Abstract: phototransistor npn INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External , (xW 2 2 VF 1.28 1.5 1.5 1.5 1.5 1.5 6 5 3 If 100 100 150 100 50 50 Pd 175 150 250 100 75 75 900 950 900 940 950 950 toni 500 400 50 1ns - 6 6 6 INFRARED DETECTOR DIODES NTE Type , 100 V 50 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description Diagram Number Collector , 45 15 20 PHOTON COUPLED INTERRUPTER MODULE Maximum Emitter Specification» NTE Type No. Reverse 		-
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photon coupled interrupter 3101

Abstract: phototransistor npn INFRARED EMITTING DIODES NTE TVpe Number Description Diagram Number Typical Total External , ton.'off 3017 High Speed for Remote Control 141 15 1.28 6 100 175 900 500 3027 PN Gallium Arsenide 144 1 , Bi-Directional 460 2 1.5 6 50 75 950 - INFRARED DETECTOR DIODES NTE Type Number Description Diagram Number , Infrared Pin Photodiode 437 30 50 35 100 50 65 900 PHOTOTRANSISTOR DETECTORS NTE Type Number Description , Cut-Off 590 35(Vceo) 50 10MA@10VVCE 0.2 75 400 â'" PHOTON COUPLED INTERRUPTER MODULE NTE Type No. Output 		-
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photon coupled interrupter 3101 phototransistor npn photon coupled interrupter photon coupled interrupter nte 3100 npn darlington IR phototransistor photo interrupter module 4315S

"Solenoid Driver"

Abstract: transistor 5a Transistor: 5A Load Current Capability D Programmable Switch: Manual Operation Can be Obtained D Pause , Plunger OFF ICC(ON) Pin2 Voltage Power Transistor Cutoff Current Current at Plunger ON ­ , (2.0) .128 (3.2) Dia .276 (7.0) .433 (11.0) 1 10 .217 (5.5) .100 (2.54) .900 (22.8) NTE Electronics 		NTE Electronics
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NTE1478 transistor 5a icer capacitor

NTE341

Abstract: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead for high gain performance , = 136MHz 12.8 - j11 11 - j14.8 f = 175MHz Zcl 3.0 - j3.8 f = 155MHz Clamping , Emitter/Case 45° .031 (.793) NTE Electronics 		NTE Electronics
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175MH 155MH 136MH

NTE190

Abstract: NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector­Emitter Breakdown Voltage: V(BR , 300µs. Duty Cycle 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia , ) Collector Connected to Tab NTE Electronics 		NTE Electronics
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NTE74HC4067

Abstract: NTE4097B ) .504 (12.8) 1 7 .209 (5.5) Min .100 (2.54) NTE Electronics , Symbol Saturation Voltage of the Vertical Output Transistor VV(sat)1 Note 3 0.3 0.5 1.0 , V Saturation Voltage of the Pump­Up Output Transistor Output Current with No Input Center 		-
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NTE4017B NTE4007 NTE4020B NTE74HC4067 NTE4097B NTE74HC299 NTE74HC165 NTE40175B NTE40182B NTE4018B NTE4001B NTE4019B

NTE7158

Abstract: monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR , measured during the V(BR)CES test is the V(BR)CEO of the output transistor. Electrical Characteristics , (1.27) B .160 (4.06) E .280 (7.25) Max .128 (3.28) Dia .218 (5.55) NTE273 Schematic C , (5.08) Collector Connected to Tab TO202N pF NTE Electronics 		NTE Electronics
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NTE7158

Complementary Darlington Audio Power Amplifier

Abstract: PNP Monolithic Transistor Pair (NTE7229) at current up to 0.5A and 12V at current up to 1A with an external PNP transistor. An internal , Output Current up to 1A with External Transistor (Output 3) D Fixed Precision Output 1 Voltage 5.1V +2% , (26.05) .128 (3.25) Dia .065 (1.65) .311 (7.9) .537 (13.65) 1 10 .350 (8.9) .276 (7.0) .100 (2.54) .020 (0.5) .020 (0.5) NTE Electronics 		NTE Electronics
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NTE272 Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts application note ic 555 100MH
Abstract: monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR , measured during the V(BR)CES test is the V(BR)CEO of the output transistor. Electrical Characteristics , (1.27) B .160 (4.06) E .280 (7.25) Max .128 (3.28) Dia .218 (5.55) NTE273 Schematic C , ) Collector Connected to Tab TO202N pF NTE Electronics NTE Electronics
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NTE7228

TO202N

Abstract: NTE272 NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen­Band and other high­frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up­modulation in AM , (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) E B C .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab NTE Electronics 		NTE Electronics
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TO202N

NTE322

Abstract: 27mhz rf amplifier NPN transistor ) .504 (12.8) 1 7 .209 (5.5) Min .100 (2.54) NTE Electronics , Output Transistor Leakage Current C t Upper IL U Lower Input Voltage IN 1 VIN (H 		NTE Electronics
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27mhz rf amplifier NPN transistor choke 380 65/3B

NTE7064

Abstract: .364 Multicomp . . . . .360, 364 Nichicon . . . . . .354~359, 361, 362 NTE . . .351~355, 364~367 ON . . , 1.51 CD4040BCN 0.51 CD4044 2.47 CD4046 4.96 CD4047BCN 0.43 CD4050 0.82 CD4051 1.28 CD4053 1.51 CD4060 , 0.88 H-CP82C55A 5.58 HD14051BP 1.28 HD14052BP 0.31 HD14538 1.42 HD14538BP 2.07 HD74HC27FP 0.69 HER101 , 0.55 BA6219 5.59 BA6219B 5.59 BA6229 1.59 BA6238 1.28 BA6238A 1.28 BA6239 1.73 BA6239A 1.73 BA6247 1.35 , BDX33C 1.50 BDX34C 1.28 BDX53C 0.77 BDX54C 0.65 BF245A 0.40 BF422 0.13 BF423 0.15 BF469 2.19 BF471 2.19 		NTE Electronics
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NTE7064

STk442-130

Abstract: M56730ASP NTE454 MOSFET, Nâ'"Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance â'" Crss = 0.03pf (Max) D High Forward Transfer Admittance â'" |yfe , | VDS = 15Vdc, VG2S = 4.0Vdc, VGIS = 0, f = 1.0kHZ 8.0 12.8 20 mmhos Input Capacitance , (0.45) Dia Gate 2 Drain Gate 1 45° Source/Case .040 (1.02) NTE Electronics 		MCM in One Catalog
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STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A A3141LUA A3212ELHLT A3280LLHLT A3515EUA A3515LUA A3516LUA
Abstract: NTE454 MOSFET, N­Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance ­ Crss = 0.03pf (Max) D High Forward Transfer Admittance ­ |yfe| = , Transfer Admittance (Note 3) |yfe| VDS = 15Vdc, VG2S = 4.0Vdc, VGIS = 0, f = 1.0kHZ 8.0 12.8 , (0.45) Dia Gate 2 Drain Gate 1 45° Source/Case .040 (1.02) NTE Electronics NTE Electronics
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200MHZ

NTE454

Abstract: 200MHZ 1.28 V TJ = -40° to +125°C Efficiency VIN = 12V, ILOAD = 3A, VOUT = 5V - 77 - , output transistor OFF. Pin Connection Diagram (Front View) ON/OFF VIN Feedback Output , ) Max .067 (1.7) 1 5 .105 (2.67) NTE Electronics 		NTE Electronics
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VG15

NTE7223

Abstract: NTE722 cell density, high performance and high reliability. The NTE2164 uses a single transistor dynamic , performing RAS only refresh cycles, hidden refresh cycles, or normal read or write cycles on lthe 128 , input capacitance D 128 Refresh Cycles (AO-A6 Pins for Refresh Address) D CAS Controlled Output , to VIH) is indeterminate. Note13 Either tRRH or tRCH must be satisfied for a read cycle. NTE 		NTE Electronics
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NTE7223 NTE722

NTE2164

Abstract: , C = 180nF to GND ­ 12.8 ­ ms Free Running Frame Period FFP2 R = 408k, C = 220nF , V FV8B V8 > V7, I8 = 1A ­ 2.5 4.5 V Flyback Transistor ON (Output = High State , Voltage to V7 Flyback Transistor OFF (Output = V7 ­ V8) Note 1. Frame Period Ratio = F2DB FCI , ) Max .200 (5.08) Max .100 (2.54) .700 (17.78) .099 (2.5) Min NTE Electronics 		NTE Electronics
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DR1300

Abstract: LV14 NTE6664 incorporates a one­ transistor cell design and dynamic storage techniques. In addition to the , Early­Write Common I/O Capability D D D D D D 128 Cycle, 2ms Refresh Control on Pin1 for Automatic or , ) .700 (17.78) .099 (2.5) Min Mouser Electronics Related Product Links 526-NTE6664 - NTE NTE6664 NTE Electronics 		NTE Electronics
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NTE1888 DR1300 LV14
Abstract: driver SOP DIP DIP/SOP DIP/SOP DIP/SOP SSOP 8 8 8 8 8 16 R equires external pow er transistor; R equires external pow er transistor; Io m a x Io m a x = 70m A = 70m A N 0.3121A N 0.3121A N o.3121A N 0.3121A - No. 3246 R equires external pow er transistor; bult-in auto reset circuit; Io m a x = 70m A R equires external pow er transistor; built-in auto reset circuit; I o m a x = 70mA Built-in pow er transistor and auto reset circuit, I o m a x = 1A; lock-u p dete ction output Built-in pow er transistor and NTE Electronics
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