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Part Manufacturer Description Datasheet BUY
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

transistor NPN 30 watt

Catalog Datasheet MFG & Type PDF Document Tags

motorola AN1308

Abstract: 300 watts audio amplifier schematics 30 ­ 25°C COMMON EMITTER VCE = ­ 5 V h FE , DC CURRENT GAIN 1000 500 300 2SC3281 - NPN COMMON , Diode 2 µH - 6 turns airwound #16 wire, 1.625 diameter NPN Transistor PNP Transistor NPN Transistor NPN Transistor PNP Transistor NPN Transistor PNP Transistor NPN Transistor NPN Transistor NPN Transistor PNP Transistor PNP Transistor NPN Transistor 221 , Resistor 2.21 k, Resistor 10 k, Resistor 511 , Resistor 22.1 , pF, Mica Capacitor Signal Diode 2 µH - 6 turns airwound #16 wire, 1.625 diameter NPN Transistor PNP
Motorola
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motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram an1308 Elmwood Sensors AN1308/D AN1308

ELMWOOD SENSORS

Abstract: AN1308 , 1.625 diameter Q1, 2 2 NPN Transistor 80 volt Motorola MPS8099 Q3, 4 2 PNP Transistor 80 volt Motorola MPS8599 Q5 1 NPN Transistor 80 volt Motorola MPSW56 Q6 1 NPN Transistor 80 volt Motorola MPSW06 Q7 1 PNP Transistor 200 volt Motorola 2SA1306B Q8 1 NPN Transistor 200 volt Motorola 2SC3298B Q13 1 PNP Transistor 40 volt Motorola MPS750 Q14 1 NPN Transistor 40 volt Motorola MPS650
Motorola
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500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics elmwood sensors ltd Motorola design of audio amplifier an1308 300 watts amplifier schematics 12 volt audio amplifier class D schematic

rohm mtbf

Abstract: CAPACITOR chip murata mtbf , Emitter Ballasted for Long Life and Resistance to Metal Migration 30 W, 1.5 GHz RF POWER TRANSISTOR NPN , Preferred Device NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common , Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x , Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP , - 30 Watts Gain - 9 dB Min @ 30 Watts (PEP) Efficiency - 30% Min @ 30 Watts (PEP) Intermodulation
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rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 MRF15030 GX-0300-55-22

opto-coupler darlington pnp

Abstract: transistor current booster circuit current and 10 watt dissipation are needed. A Motorola MJE3055 might be used for the output transistor , and a 60°C maximum ambient. The transistor junction-to-ambient thermal resistance is 333°C/ watt, so , because the LED light output and transistor beta have approximately compensating coefficients. Figure 1. NPN driver VCC IO RIF 1.2 K T2L Input 2N3568 Multiplying the minimum CTR by 0.9 , to discrete transistor drivers. Figure 3 shows how this is done. Note that the gate is used in the
Vishay Intertechnology
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2N3638 opto-coupler darlington pnp transistor current booster circuit k 2750 transistor 2N3638 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055

178 09T

Abstract: 1000 watt Motorola power supply :1 Load VSWR @ 28 Vdc, at Rated Output Power 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · Gold , PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x 330 £2,1/8 Watt Chip , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Si, 1/8 Watt , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , Volts, 1490 MHz, Class AB Characteristics: Output Power - 30 Watts Gain - 9 dB Min @ 30 Watts (PEP
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178 09T 1000 watt Motorola power supply capacitor mallory transistor MTBF Mallory Capacitor bd136 equivalent

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Phoenix, AZ. MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · · · · · · · CASE 395C , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola , R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola , Volts, 1490 MHz, Class AB Characteristics: Output Power - 30 Watts Gain - 9 dB Min
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor

2N3568

Abstract: optocoupler pnp than one transistor must be used in cascade. For example, suppose 3 amperes load current and 10 watt , boosters Figure 4. NPN current booster Io Q1 Q2 Io Rb1 Rb2 ICBO(max) at 30 volts or , ambient. The transistor junction-to-ambient thermal resistance is 333°C/ watt, so a maximum junction , limited by the 30 volt rating of the IL1 not by the voltage or power rating of the transistor(s). Figure , 1. NPN driver VCC Available optocoupler output current is found by multiplying input (LED
Infineon Technologies
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optocoupler pnp optocoupler NPN optocoupler pnp or npn K39 2 GATE TRANSISTOR FOR LED 6 VOLT OPTOCOUPLER HAND BOOK 1-888-I

opto-coupler darlington pnp

Abstract: 2N3568 transistor must be used in cascade. For example, suppose 3 amperes load current and 10 watt dissipation are , NPN and the PNP circuits. R b provides a return path for ICBO of the output transistor. Its value is , derating is not usually necessary over the 0°C to +60°C range because the LED light output and transistor beta have approximately compensating coefficients. Figure 1. NPN driver VCC IO Multiplying , the IL1 is being operated from logic with 5 volt driving transistor and 0.2 volt VCE saturation is
Siemens
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pnp phototransistor mje3055 data transistor MJE3055 optocoupler base resistor DARLINGTON phototransistor 14 MJE205
Abstract: : Output Power â'" 30 Watts Gain â'" 9 dB Min @ 30 Watts (PEP) Efficiency â'" 30% Min @ 30 Watts (PEP) Intermodulation Distortion â'" â'"30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor, NPN, Motorola (MJD47) 2 x 330 â"¦, 1/8 Watt Chip Resistors in Parallel, Rohm 100 â"¦, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 â"¦, 1/8 Watt , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave largeâ'"signal, common Motorola
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MRF15030/D

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Power - 30 Watts Gain - 9 dB Min @ 30 Watts (PEP) Efficiency - 30% Min @ 30 Watts (PEP) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt, Chip Resistor Rohm 500 , 1 , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN
Motorola
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CAPACITOR chip mtbf IrL 1540 N RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 electrolytic capacitor MURATA ERIE CAPACITOR

BC237

Abstract: BC548 MPSA20 MPSA27 MPSA28, MPSA29 MPSA42, MPSA43 One Watt Amplifier Transistor - NPN Silicon . . . . . . . . . , Watt High Voltage Transistor - NPN Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1327 , -25, BC327-40 BC368 (NPN), BC369 (PNP) BC372, BC373 BC447, BC449, BC449A 30 Volts Schottky Barrier , Mount PNP Transistor . . . . . . . . . . . . . . . . . . . 428 Medium Power NPN Silicon HIght Current Transistor Surface Mount . . . . . . . . . . . . 430 Medium Power NPN Silicon High Current Transistor Surface
ON Semiconductor
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BC237 BC548 BC212 BC847BPDW1T1 Series low noise transistors bc638 cbc550c 1SS383T1 2N3819 2N3903 2N3904 2N3906 2N4401

rohm mtbf

Abstract: kermet case b Applications MRF20030 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · · · · · · MAXIMUM , Resistor 10 0 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola , Flange Mount RF Connector, MA/COM Q1 Q2 R1 R2 R3 R4 R5 R6 R7, R9 R8 Board Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 250 £i, Chip Resistor, 1/8 Watt, Rohm 500 Q, 1/4 Watt , Watt, Rohm 30 Mil Glass Teflon®, Arlon GX-0300-55-22, E r- 2.55 Figure 2. Class A Test Fixture
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kermet case b SILICON PNP POWER TRANSISTOR b 861 933 TRANSISTOR 1S211 1S22I

marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U . DESCRIPTION MIN - MAX MIN MARKING LEADED CMPT918 NPN RF OSC 15 350 20 3.0 600 C3B 2N918 CMPT2222A NPN , 2N2907A CMPT3640 PNP SAT SWITCH 12 80 30 120 10 500 C2J 2N3640 CMPT3904 NPN AMPL/SWITCH 4o 200 100 300 , 2N5087 CMPT5088 NPN LOW NOISE 30 50 300 900 0.1 50 CI Q 2N5088 CMPT5089 NPN LOW NOISE 25 50 400 1200 , DARLINGTON 30* 500 10K 100 125 C1M MPSA13 CMPTA14 NPN DARLINGTON 30* 500 20K 100 125 C1N MPSA14 CMPTA42 NPN HIGH VOLT 300 500 40 30 50 C1D MPSA42 CMPTA56 PNP HIGH CURRENT 80 500 50 100 50 C2G MPSA56
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marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd DDQD43D 2N2222A CMPT2369 2N2369 CMPT2484 2N2484

bd135 equivalent

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ , Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon®, Arlon GX , , Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 Q, Chip Resistor , (PEP) Power Gain - 9 dB Efficiency - 33% Intermodulation Distortion 30 dBc Characterized with Series , BROADBAND NPN BIPOLAR · · · · · MAXIMUM RATINGS Rating Collector-Emitter Voltage (Iß = 0 mA , Range Operating Junction Temperature Symbol VCEO V CES Value 25 60 60 30 -3 8 Unit Vdc Vdc Vdc
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bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ mrf2006 Arlon mallory 170 MRF20060 MRF20060S RF20060 RF20060S IS22I

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ , Rohm 10 f t 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass , Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola , (PEP) Power Gain - 9 dB Efficiency - 33% Intermodulation Distortion 30 dBc · Characterized with , BROADBAND NPN BIPOLAR MAXIM UM RATINGS Rating Collector-Emitter Voltage de = 0 mA) Collector-Emitter , Symbol Rejc Max 0.7 Unit C C/W Symbol V CEO V CES v CBO V CER V EB Value 25 60 60 30 -3 8 Unit
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motorola rf power transistors mtbf mallory trimmer CHIP - X 0934 2779, transistor transistor bd135 transistor APPLICATIONS Hf 12 v 150 watt

transistor current booster circuit

Abstract: CCLH150 shown in Figure 2A and 2B. In this circuit, the transistor Q1 (NPN), or Q1A (PNP) amplifies the CLDs , booster with an NPN transistor and Figure 2B with a PNP transistor. The principle of operation of the two , . Current Booster with NPN transistor For illustration, the complementary NPN CZT3055 and PNP CZT2955 , regulation only up to 15mA maximum, and in terms of power, only 1 watt maximum. Hence, the usefulness of the , design technique to boost the current limit by utilizing the current gain of a transistor and applying
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CCLH150 transistor theory current limiting diodes ir* booster

MRF321

Abstract: JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed , Efficiency = 50% Min â'¢ 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR â'¢ Gold Metallization System for High Reliability â'¢ 10W, 400MHz RF POWER TRANSISTOR NPN SILICON , Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (lc = 500mA, VCE = 5.0Vdc) NOTE , 50 60 â'" % Load Mismatch (Vcc = 28 Vdc, Pout = 10 W, f = 400 MHz, VSWR = 30:1 all
New Jersey Semiconductor
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400MH 1N4001 56-590-65/4B VK200-19/4B

transistor NPN 30 watt

Abstract: transistor Ic 1A NPN NPN NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current Ptot =1 Watt NPN FHFCX491 SOT-89 PIN ASSIGNMENT PIN NAME , 100 - 300 - - nA DC Current Gain hFE3 hFE4 1 NPN NPN Medium Power Transistor NPN Medium Power Transistor NPN FHFCX491 Min - - - Type - - - Max 250 500 1.1 1.0 150 - - - - 10 , =500mA VCE=5V, IC=1.0A VCE=5V, IC=2.0A 60 80 5.0 - - - 100 100 80 30 - - - - - - - - - -
Fenghua Advanced Technology
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transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt Collector 5v npn TRANSISTOR 60V transistor npn 1a 5v power transistor 100MHZ

2N5108

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or , pre-driver stages in UHF equipm ent and as a fundam ental frequency oscillator at 1.68 GHz. NPN SILIC O N · Specified 1 GHz, 28 Vdc Characteristics O u tp u t Power - 1.0 Watt M inim um Gain = 5 0 dB E fficiency = 35% Typical 1.68 GHz, 28 Vdc Characteristics O u tp u t Power = 0.3 Watt Efficiency = 15% · , Valua 30 55 55 3.0 0.4 3.5 0.02 -65 to +200 Unit Vdc Vdc Vdc Vdc Ade Watts W /°C c Po NOTES 1
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2N5108 MOTOROLA 2N5108 TRANSISTOR C-111 M

bfr96 equivalent

Abstract: mce544 FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle , 55 30 3.5 400 150 -55 to +150 APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Unit V V V mA C C ! 1 Watt PA, pre-driver, Oscillator IM Symbol VCBO VCEO VEBO IC TJ TSTG , AR IN STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Min. 55 30 IE = 0 IB = 0 IC = 0 , Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Units MHz dB Watt Page
Microsemi
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MRF545 MRF544 MC1012 MC1343 MC1333 MCE545 bfr96 equivalent mce544 Bipolar Transistor y 200Mhz MRF237 / SD1127 200MH MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96
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