500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor MW 882

Catalog Datasheet MFG & Type PDF Document Tags

transistor MW 882

Abstract: 5v ZENER DIODE times more power per area (mW/ mm2) compared to standard SOT-23 packages. Typical Power Density Package (mW/mm2) 2 DFN (Dual Flat No Leads): Leadless package type: SOD-323 65mW/mm SOT , Pre-Biased PNP Transistors 47k 47k 250mW 100mA DFN1006-3 Bipolar Transistor Product , applications such as mobile phones, digital audio players and LCD modules Bipolar Transistor Product , NPN Bipolar Transistor 250mW 45V 100mA 200 450 5V 2mA DFN1006-3 BC857BLP
Diodes
Original
DFN1006 DFN1006-2 SBR02M30LP transistor MW 882 5v ZENER DIODE zener diode 5v Zener Diode SOT-, 5v, 200mA AEC-Q101 1N4448HLP BAS16LP BAS40LP

diode sot-23 marking AG

Abstract: 706 TRANSISTOR sot-23 versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel , 1.5 350 -65 to +150 357 UNITS V V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA , 0.586 0.568 0.018 0.176 0.135 0.035 0.17 (ppm) 27,059 2,471 149,882 104,118 7,059 468,706 137,882 68,941 6,941 6,941 530,824 68,941 66,824 2,118 20,706 15,882 4,118 20,000 7439-89-6 14.99% 7440-02-0
Central Semiconductor
Original
CMPDM7002AG diode sot-23 marking AG 706 TRANSISTOR sot-23 transistor 702g sot23 material composition sot-23 Marking ag CMPDM7002A C702A

transistor MW 882

Abstract: TRANSISTOR b 882 p . MAX. -5 0 -100 -100 500 61 1.2 UNIT V mA mA mW kQ hFE R1 R2 R1 68 33 0.8 47 1 1997 Jul 01 882 Philips Semiconductors Product specification PNP resistor-equipped transistor , Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES · , .1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION PNP resistor-equipped transistor in a TO , c c D C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS
-
OCR Scan
TRANSISTOR b 882 p 882 transistor transistor D 882 p transistor 882 transistor D 882 PNP TRANSISTOR SOT54 PDTA144ES PDTC144ES

transistor MW 882

Abstract: ILD766 ) .150 (3.81) 4° Typ. 18° Typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .020 (.051 , °C Ambient (LED Plus Detector) Single Channel . 250 mW Dual Channel. 400 mW Derate Linearly from 25°C Single Channel . 3.3 mW/°C Dual Channel . 5.3 mW/°C Creepage , °C . 100 mW Derate Linearly from 25°C . 1.33 mW/°C 1 .248 (6.30) .256 (6.50
Siemens
Original
IL766 ILD766 IL766-2 IL/ILD766-1 IL/ILD766-2 E52744 VACPK/5300

smd transistor 6b-1

Abstract: 6B1 zener diode ) designed to drive highly capacitive loads such as the gate of a power MOSFET transistor and at the same , ) .347 (8.82) .110(2.79) .150(3.81) t M axim um R atings E m itter Reverse Voltage , . 100 mW Thermal Resistance. 700 , Power Dissipation (pin 5 to 4 ) . 150 mW , .250 mW Storage Temperature R to +150°C Operating
-
OCR Scan
smd transistor 6b-1 6B1 zener diode 6 pin Optocoupler smd transistor 6b1 1209 optocoupler L05B IL485

TRANSISTOR 187

Abstract: RADIO fm RECEIVER IC UHF UHF amplifier module 148 BSH103 N-channel enhancement mode MOS transistor 156 BSH104 N-channel enhancement mode MOS transistor 163 BSH105 N-channel enhancement mode MOS transistor 166 BSH106 N-channel enhancement mode MOS transistor 169 BSH107 N-channel enhancement mode MOS transistor 172 BSH203 P-channel enhancement mode MOS transistor 175 BSH204 P-channel enhancement mode MOS transistor 178 BSH205 P-channel enhancement mode MOS transistor
Philips Semiconductors
Original
TRANSISTOR 187 RADIO fm RECEIVER IC UHF IC 740 1ghz fm modulator transistor for RF amplifier and mixer audio compandor IC 80CL580/83CL580 83CL781/83CL782 BGY120A BGY120B BGY120D BGY122A

6B1 zener diode

Abstract: 5- pin smd IC 775 the gate of a power MOSFET transistor and at the same time provide isolation and floating voltage , (8.82) 6] -out SI B 3 +out n * .110(2.79) .150(3.81) t Maximum Ratings Emitter Reverse Voltage , Power mW , ).150 mW Package Insulation Thickness between Emitter and Detector.>0.4 mm , Total Power mW
-
OCR Scan
5- pin smd IC 775 transistor 335 smd SMD 6 PIN IC 2N2222 transistor 2N2222 SMD 2n2222 smd transistor transistor 2N2222 SMD configuration

"IGBT Drivers"

Abstract: transistor CC 11 A without Base Connection · GaAlAs Emitter · Integrated Detector with Photodiode and Transistor · High , photodetector consisting of a photodiode and a high speed transistor in a DIP-6 plastic package. The device is , ) .150 (3.81) .300 (7.62) .347 (8.82) Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage , pulses/sec. Total Power Dissipation. 45 mW Detector (Si Photodiode + Transistor) Supply Voltage
Siemens
Original
SFH636 6N136 transistor CC 11 A

NB SOT-23 NPN

Abstract: CHT44 Dissipation Bandwidh No. Emitter VCE(SAT) @ IC / IB Max.V mA / mA fT @ VCE / IC MHz V / mA mW NPN SILICON TRANSISTOR (CIRCUIT 25) CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 , -223 SOT-223 SOT-223 NPN SILICON TRANSISTOR (CIRCUIT 33) 2SD2098 CHTA14X 2SD882 2SD1664 CHT3904X , CHT3019Z CHT31CZ CHT122Z CHT5338Z CHT5551Z CHT2000Z CHTA42Z CHTA44Z R98 XEN 882 1664 XBN XAN , No. Emitter VCE(SAT) @ IC / IB Max.V mA / mA fT @ VCE / IC MHz V / mA mW NPN SILICON
-
Original
2SC2411K 2SC2412K NB SOT-23 NPN ch3904 transistor marking s1a transistor s1p 39 MARKING SOT223 transistor circuit CHBTA13 CH3904 CHT2222A 2SD1781K
Abstract: Integrated Detector with Photodiode and Transistor High Data Transmission Rate: 1 MBit/s TTL Compatible Open , (0.55)' T 'VP- V .010 (.25) .014(35) .300(7.62) .347 (8.82) J 110(2.79) 150 (3.81) . T , speed transistor in a DIP-6 plastic package. The device is functionally similar to 6N136 except there is , . Total Power Dissipation. 45 mW Detector (Si Photodiode + Transistor) Supply Voltage -
OCR Scan

transistor MW 882

Abstract: transistor D 882 p -J g N P N '>'J-1> h -7 > 's Z ? ( S t f t r t Ä ^ 'l'7 P ) Epitaxal Planar NPN Silicon Transistor , used for mount ing. 3) No mutual interference exists be tween each transistor. 4) This device can cut , V V mA mA mW 1 *2 100 300 (TOTAL)*3 -5 5 ~ 1 5 0 ·c *1 i n * * » : O utput C u r r , r r e n t: lc(M ax.)-lnd icates m axim um current flow ing as a single unit of transistor. H o w e , ) Fig.3 Fig.4 i 882 mum
-
OCR Scan
SC-70 SC-59

OPTOCOUPLER 636

Abstract: Detector with Photodiode and Transistor High Data Transmission Rate: 1 MBit/s TTL Compatible Open Collector , [3 .343 (8.70) 18° typ. _.010 (.25) .014 (.35) .100 (2.54) typ. .300 (7.62) .347 (8.82 , transistor in a DIP-6 plastic package. The device is functionally similar to 6N136 except there is no base , /sec. Total Power D mW Detector (Si Photodiode + Transistor) Supply V oltage
-
OCR Scan
OPTOCOUPLER 636

transistor 647

Abstract: amplifier TRANSISTOR 12 GHZ SA630 SA900 SA910 SA9025 SA2410 TDA7050T TDA7052A; TDA7052AT TDA8541 TDA8547 UBA1710M DECT 500 mW power amplifier DECT 500 mW power amplifier Single pole double throw (SPDT) switch l/Q transmit modulator Variable , programmable low power compandor Unity gain level programmable low power compandor 850 857 865 875 878 882 , N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor
-
OCR Scan
transistor 647 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ TRANSISTOR BTL POWER AMPLIFIER sa636 DECT Transceiver power SA601 SA602A SA611 SA612A SA620 SA621

transistor MW 882

Abstract: uhf range fm modulator module N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor N-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channei enhancement mode MOS transistor P-channel enhancement mode MOS transistor P-channel enhancement mode MOS transistor N-channel enhancement mode vertical D-MOS transistor N-channel enhancement mode vertical D-MOS
-
OCR Scan
BG204 uhf range fm modulator N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOS 4w TRANSISTOR BTL POWER AMPLIFIER TRANSISTOR TRANSMIT FM transistor 1734 wireless lcd receiver 80CL580/83CL530 33CL781/83CL782 BGY1208 BGY122B BGY205

sled motor

Abstract: 4851-4 associated 5.0 V CD LSIs, including the DSP and microprocessor. (The drive transistor, L, Di and C are , PNP transistor, L, Di and C are external components: step-down circuit) · System start and stop can , ICD 150 mA Allowable power dissipation Pd max 800 mW Operating temperature , Operating output Unit V 150 mW Electrical Characteristics at Ta = 25°C, VCC = 2.4 V Parameter , Circuit] Output voltage VCD NPN transistor drive current Ino 4.75 3.0 V mA Load
SANYO Electric
Original
EN4851 sled motor 4851-4 2Sc3650 equivalent servo iai block diagram of VCD and its functions LB8107M 3148-QFP44MA

Silonex

Abstract: NSL-892 stability, linearity, and compatibility with simple transistor amplifiers also well suit them for low light , >K Tungsten (25 mW/cm') - . Typ. Min. Typ. Dark Current â'ž (|i.A) » Capacitance (a- V = 1 V , 0.38 10 0.095 10.90 NSL-882 0.44 0.58 0.28 0.3 2.5 5.0 0.55 10 0.148 7.50 NSL-891 0.65 0.80 0.28 0.3 , t 3 O OC O fe o X V) IRRAOIANCE (mW/cm2) 10 16 20 100 200 300 ILLUMINATION (Ftc) 400 25 , current is extremely linear over wide ranges of illumination. Ui § § t O ÇÇ o IRRAOIANCE (mW/cm2
-
OCR Scan
NSL-710 NSL-720 NSL-751 NSL-781 NSL-782 NSL-791 Silonex NSL-892 F394 SSSS71 2870I

B550 transistor

Abstract: trios cny17-3 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82 , .100 mW Forward Voltage VF 1.25 (1.65) V IF = 60 mA Breakdown Voltage VBR 6 V , .150 mW Package Isolation Test Voltage (Between emitter & detector referred to climate DIN 40046, part , transfer ratio versus diode current (TA=50°C) VCE=5 V, IC/IF=f (IF) Figure 9. Transistor , -4 VCEsat=f (IC) (TA=25°C) Figure 18. Permissible power dissipation transistor and diode Ptot=f (TA
Siemens
Original
CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-4 B550 transistor trios cny17-3
Abstract: the associated 5.0 V CD LSIs, including the DSP and microprocessor. (The drive transistor, L, Di and , drive PNP transistor, L, Di and C are external components: step-down circuit) â'¢ System start and , circuit output current ICD 150 mA Allowable power dissipation Pd max 800 mW , 2.0 VCC 2.4 4.0 Operating output Unit V 150 mW Electrical Characteristics at , 27 mA 5.0 5.25 [Step-up Circuit] Output voltage VCD NPN transistor drive current SANYO Electric
Original

SFH600

Abstract: SFH600-0 ) typ. .110 (2.79) .150 (3.81) .010 (.25) .014 (.35) .300 (7.62) .347 (8.82 , µs) . 2.5 A Total Power Dissipation. 100 mW Forward , . 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN , ) Figure 9. Transistor characteristics (HFE =550) SFH600-2, -3 IC=f(VCE) (TA=25°C, IF =0) Figure 12 , power dissipation for transistor and diode Ptot=f (TA) Figure 16. Saturation voltage versus
-
Original
SFH600 SFH600-0 SFH600-1 SFH600-3

SFH600

Abstract: SFH600-0 ) typ. .110 (2.79) .150 (3.81) .010 (.25) .014 (.35) .300 (7.62) .347 (8.82 , ). 2.5 A Total Power Dissipation. 100 mW Forward Voltage VF , . 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN , ) Figure 9. Transistor characteristics (HFE =550) SFH600-2, -3 IC=f(VCE) (TA=25°C, IF=0) Figure 12 , dissipation for transistor and diode Ptot=f (TA) Figure 16. Saturation voltage versus collectorcurrent
Siemens
Original
LINEAR OPTOCOUPLER long term stability optocoupler
Showing first 20 results.