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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor F 585-34

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transistor 585-34

Abstract: transistor F 585-34 TARF1502U NPN Planer RF TRANSISTOR SOT-323 DESCRIPTION unit : mm The TARF1502U is a , suitable for a high density surface mount since transistor has been SOT323 package FEATURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=3V, Ic=5mA N.F = 1.5dB TYP. @ f=2GHz, VCE=3V, Ic=5mA o High Gain MSG = 17.5dB TYP. @ f=1GHz, VCE=3V, Ic=15mA MAG = 11.5dB TYP. @ f=2GHz, VCE=3V, Ic=15mA o High Transition Frequency fT = 12GHz TYP. @ f=2GHz, VCE=3V, Ic=15mA PIN CONFIGURATION PIN NO
Tachyonics
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transistor 585-34 transistor F 585-34 137615 141344 56833 160751 000GH 200GH 400GH 600GH 800GH

59013 transistor

Abstract: transistor 59013 THN4501 Series Semiconductor SiGe NPN Transistor SOT-523 Application Unit in mm LNA and wide band amplifier up to GHz range FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.5 dB at f = 2 GHz, VCE = 1 V, IC = 7 mA o High Transition Frequency fT = 11 GHz at f = 2 GHz, VCE = 3 V, IC = 50 mA Pin Configuration Pin No Base E
AUK
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THN4501E 59013 transistor transistor 59013 79024 79015 ic 8237 38436 THN4501U THN4501Z