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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor E 13009

Catalog Datasheet MFG & Type PDF Document Tags

transistor E 13009

Abstract: transistor d 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C , KSE13008/13009 POWER DERATING NPN SILICON TRANSISTOR 0 25 50 75 100 125 150 175 , Characteristic : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008 : KSE13009 Emitter Base Voltage
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transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L KSE13008/13009

transistor E 13009

Abstract: all transistor 13009 Rev. B FAIRCHILD S E M IC O N D U C T O R ^ 1 9 9 9 Fairchild S em iconductor Corporation KSE13008/13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , /13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or , CHARACTERISTICS Characteristic (Tc =25°C) Symbol V ceo( sus) Iebo h FE VC E(sat) Test Conditions lc = 10mA
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all transistor 13009 e 13009 f transistor EN 13009 D 13009 13009 2 transistor EN 13009

transistor E 13009

Abstract: D 13009 K ), TURN OFF TIME 594 ELECTRONICS KSE13008/13009 POW ER DERATING NPN SILICON TRANSISTOR , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 1 3008 : KSE13009 Collector Emitter Voltage : KSE13008 : K S E 1 3009 Emitter , Characteristic (Tc = 2 5 t) Symbol V o e o (s u s ) Test Conditions lc = 10mA, Ib " 0 V eb = 9 V , lc =0
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E13009 transistor b 595 J 13009 - 2 E 13009 2 transistor j 13009 p 13009

e 13009 d

Abstract: transistor E 13009 NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN SILICON TRANSISTOR POWER DERATING 160 140 d is s ip a t io n 120 100 P d , Gain hFE 'C o lle c to r Em itter Saturation Voltage VC (sat) E 'B a se Em itter Saturation
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e 13009 d transistor E 13009 l

E 13009 2

Abstract: e 13009 l 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V , passivated npn power transistor in a TO-220 envelope, intended fo r use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , max (2x) JI 2,54 2,54 -0,9 max (3x) 7 S6 2 2 5 7 .S ^ J u n e 1988 617 / 11 N
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EB 13009 D EB 13009 transistor mje 13009 13009 to-3p 13009 H S3T31 T-33-13

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , transistor in a T0-220 envelope, intended for use in switching regulators, inverters, motor controls , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , â'¢bm IE >E ptot tot 1 stg Rth j-mb Rth j-a max. max. max. max. max. max. max. max. max. â
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tr 13009 transistor MJE 13009 13008 TRANSISTOR E 13009 J 13009 13009 K 53T31

SR 13009

Abstract: E 13009 Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 0.5 1 1 Unit mA mA mA mA V 300 400 9 1.5 1.6 8 6 4 150 V V V V I e = 1 mA le = 8 A; Ib = , Transistor Features · · · · · HIGH SPEED technology High reverse voltage Power dissipation Pu,| = 100 W
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SR 13009 transistor sr 13009 13009T BR 13009 D 13008 K TE13008 TE13009

transistor 13009

Abstract: transistor E 13009 NPN SILICON TRANSISTOR 13009 4 100mm D423AG-00 240±20µm 4230×4230µm 2 1200×420µm 2 1140×540µm 2 B E KSE13009HE13009 Ta=25 TO-220 Tstg -. -65~150 Tj-. 150 PC -T c=25. 100W VCBO-. 700V VCEO-. 400V IC-DC
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transistor E 13009 2 d423a npn 13009 13009 NPN Transistor T 13009 HE13009 12AIB 10VIC 125VIC

transistor E 13009

Abstract: transistor d 13009 150 -1 5 0 -1 5 0 100 100 30 30 -3 0 -3 0 Medium Power Transistor T ype No. NPN M JE I3 0 0 4 M JE I3 0 0 5 M JE I3 0 0 6 M JE 13007 M JE 13008 M J E 13009 T IP 2 9 /A /B /C T IP 3 1 /A /B /C T I P 4 , «Transistors Small Signal Transistor T ype No. TO-92 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 , YTS3905 YTS3906 Y TS4I23 YTS4124 YTS412Ò YTS4126 YTS4400 YTS440I YTS4402 YTS4403 V e» (V) 40 40 -4 0 -4 0 , 80 100 Pt (A) 4 4 8 8 12 12 1 3 6 5 E 5 . hre V ce {V) 1 0 -6 0 1 0 -6 0 8 -6 0 8 -6 0 8 -4 0 8
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13007 2 transistor 13007 m 13009 PNP Transistor jE 13007 transistor E 13007 power transistor npn to-220 2N4400 2N4401 2N4402 2N4403 2N5400 2N540I

transistor E 13009

Abstract: 13009 H ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q
STMicroelectronics
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13009 L 13009L transistor switch 13009 ST-13009 13009 TRANSISTOR equivalent power switching transistor 13009

transistor E 13009 l

Abstract: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic parameters I High voltage capability I Minimum lot-to-lot spread for reliable operation I Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 âP Q
STMicroelectronics
Original

transistor E 13009

Abstract: 13009 H ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L
STMicroelectronics
Original
13009 applications

transistor d 13009

Abstract: transistor E 13009 (su s) M JE 1 3 00 8 M J E 13009 'C E V >E80 1 5 1 300 4 00 - Vdc m Adc mAdc *S/b - See , ?254 0GÛ54G5 7 | M JE 13008, M JE 13009 7 ~33 ~ / 3 -, -, F IG U R E 1 - F O R W A R D B IA S , temperature and second breakdown. Safe operating area curves indicate I q - V q e limits of the transistor , power transistor for S W IT C H M O D E applications are voltage and current ratings, switching speed , specifications which make this a " S W I T C H M O D E " transistor are the inductive switching speeds (tc and
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n752 E 13009 TRANSISTOR motorola e 13009 p E 13009 TRANSISTOR AN719 e8015 MJE13009

diode D45C

Abstract: JE 800 transistor STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O (s u s ) V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS , JF10012## 100/12k 6 650 10 *T MHz 5 3 min 3 min D e v ic e T yp e M JF16212 , -220AB) R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O (s u s ) V o lts M ax M in 0.5 , PNP M JE 2360T M JE 2361T 1 tf hFE M in /M a x 1 0.6 typ 3 30 D e v ic e
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diode D45C JE 800 transistor L146 IC BD800 JF16006A JF16018 JF16206 JF16010A JF16210 JF6284

transistor MJ 13009

Abstract: E13009 . : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description , Page No. : 5/6 MICROELECTRONICS CORP. TO-247(TO-3P) Dimension G H A DIM A B C D E F G H I J K L M r1 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H MJ E 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2.Collector 3.Emitter E M L C I Material: · Lead solder
Hi-Sincerity Microelectronics
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HR200202 transistor MJ 13009 j 13009 to247 mj 13009 Vcc-125Vdc e13009d

E 13009

Abstract: transistor MJ 13009 Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , . : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description , 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: · All rights are
Hi-Sincerity Microelectronics
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SEC 13009 tr 2 13009 HE200206

transistor d 13009

Abstract: 9622 transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF FEATURES LOW NOISE , : |S21 e |2 = 9.0 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2: |S21 e |2 = 8.5 dB TYP at f = 2 GHz, V , VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Vce = 3 V < E < E O o u .i? "o O , = 3 V DC CURRENT GAIN vs. D C Current, Gain h F E 0.5 5 10 50 0.1 0.2 0.5 , Insertion Power Gain, |S2 1 E|2 (dB) 0.5 1 5 10 50 100 0.5 2 5 10 20 50
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9622 transistor t 3866 power transistor NE856 NE685 NE85630 NE68530 UPA835TF UPA832TF-T1

ta 8268 ah

Abstract: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · · · LOW NOISE: N F = 1.2 dB T Y P at f = 1 G H z, V c e = 3 V, Ic = 7 mA UPA821TF OUTLINE DIMENSIONS i«*- - , at f = 1 G H z, V c e = 3 V, Ic = 7 mA - * - 1 .2 5 ± 0 . 1 - * - SMALL PACKAGE STYLE: 2 N E 8 5 6 die in a 2 mm x 1.25 mm x 0 .6 mm package 0 .2 2 . 5 Ï "(ÀH Leads) DESCRIPTION T h e U , amplification in the V H F to U H F band. T h e two die are chosen from adjacent locations on the w afer. T h e
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ta 8268 ah UPA821TF-T1

NEC uPA 63 H

Abstract: NEC uPA 63 PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TF FEATURES · · · LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS (Units in mm) P ack age Outline T S 06 2.1 ± 0.1 - HIGH GAIN: |S 21 e |2 = 9.0 dB TYP at f = 1 GHz, V c e , CHARACTERISTICS (Ta = 25 c) P A R T NUM BER P A C K A G E OUTLINE SYM BO LS ICBO Ie b o hFE UPA 821 TF T S , 1.0 140 P A R A M E T E R S AND CONDITIONS Collector Cutoff Current at V c b = 1 0 V , I e = 0 Em
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NEC uPA 63 H NEC uPA 63 NEC uPA 63 a CL 2183 ic 4017 ic operation

transistor d 13009

Abstract: transistor j 13009 PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ · LOW NOISE: Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA 2.1 ±0.1 j'*- 1.25 ± 0.1 -* UPA832TF OUTLINE DIMENSIONS (Units in mm , Cutoff Current at Vcb = 5 V, I e = 0 Emitter Cutoff Current at V eb = 1 V, Ic = 0 DC Current Gain1 at V , 130.09 114.27 102.28 MAG 6.73 6.15 5.66 5.08 4.52 4.00 3.57 3.21 2.90 2.65 2.25 1.82 1.61 1.38 1.10 0.91
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IC 566 vco IC 8085 pin 1S21EI2
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