NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

transistor D 587

Catalog Datasheet Results Type PDF Document Tags
Abstract: TRANSISTOR POWER DERATING P d(W), p o w e r d is s ip a t i o n 589 ELECTRONICS , KSE13006/13007 KSE13006/13007 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic , , lc = 5A = Im = 1A tf > II 587 ELECTRONICS KSE13006/13007 KSE13006/13007 DC CURRENT GAIN NPN SILICON TRANSISTOR BA S E EMITTER SATURATION VOLTAGE CO LLECTO R EMITTER SATURATION VOLTAGE IciA), C O ... OCR Scan
datasheet

3 pages,
113.96 Kb

13007* transistor D 13007 transistor D 587 transistor D 588 13007 2 transistor E 13007 0 transistor En 13007 p 13007 transistor d 13007 NPN Transistor 13007 transistor 13007 13007 en 13007 KSE13006/13007 KSE13006/13007 abstract
datasheet frame
Abstract: SAMSUNG SEMICONDUCTOR INC 14E D 17^4142 00Q7317 00Q7317 «J | MPS3706 MPS3706 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V«o=20V • Collector Dissipation:'Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta -25°C) Characteristic Symbol Rating Unit Collector-Base \foltage VcBO 40 V Collector-Emitter Vbltage VcEO 20 V Emitter-Base Vbltage Vebo 5 V Collector Current ic 600 mA Collector , SEMICONDUCTOR 587 ... OCR Scan
datasheet

1 pages,
32.2 Kb

MPS3706 2N4400 transistor D 587 datasheet abstract
datasheet frame
Abstract: FC4901 FC4901 NPN SILICON RF TRANSISTOR FC4901 FC4901 NPN SOT-323 VHFUHF :S212 13dB , - 1 - FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) V 15 IC=1.0uA , mm mm A 0.30 0.40 B 1.15 1.35 C 2.00 2.40 D 0.65 H 2.20 , FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) LASERON MICRO ELECTRONIC CO., LTD - 3 - FC4901 FC4901 NPN SILICON RF TRANSISTOR SMITH VCE=5VIC=20mA, Zo=50 S21-FREQUENCY S21-FREQUENCY S22-FREQUENCY S22-FREQUENCY LASERON ... Original
datasheet

7 pages,
205.8 Kb

d 1556 transistor Transistor B C 458 transistor 9747 IC 7587 transistor 5457 FC4901 6558 s-parameter s11 s12 s21 Transistor s-parameter transistor c 2316 RF Transistor s-parameter FC4901 abstract
datasheet frame
Abstract: wideband transistor BFQ32M BFQ32M - N AUER PHILIPS/DISCRETE blE D THERMAL RESISTANCE SYMBOL PARAMETER , transistor BFQ32M BFQ32M AMER PHILIPS/DISCRETE blE ]) DESCRIPTION PNP transistor in a TO-72 metal envelope with , transistor features high power gain, high transition frequency and low noise up to high frequencies. NPN , temperature at the soldering point of the collector lead. November 1992 587 This Material Copyrighted By Its , 0D31543 0D31543 bD7 M A P X Product specification PNP 4 GHz wideband transistor BFQ32M BFQ32M - N AHER PHILIPS/DISCRETE ... OCR Scan
datasheet

3 pages,
80.76 Kb

UHF pnp transistor BFQ63 BFQ32M datasheet abstract
datasheet frame
Abstract: S AM SU N G SEMICONDUCTOR INC IME D | 7^4142 00G7317 00G7317 1 | MPS3706 MPS3706 NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR · Collector-Em ltter Voltage: Veto= , Pulse Test: Pulse Width ... OCR Scan
datasheet

6 pages,
310.71 Kb

datasheet abstract
datasheet frame
Abstract: 711002b GObV'ìMB 1"3 I PH IN BST110 BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and , Pinning 1 = source 2 = gate 3 = drain I X _I -Vos max. 60 V ±vGSO max. 20 V ->D max. 0.25 A , 25 °C unless otherwise specified Drain-source breakdown voltage -'D= 10 MA; Vgs = 0 Drain-source , max. 20 V -'D max. 0.25 A -'dm max. 0.5 A ptot max. 0.83 W Tstg -65 to + 150 °C Tj max. 150 °C ... OCR Scan
datasheet

3 pages,
65.38 Kb

P-channel max 083 BST110 BST110 abstract
datasheet frame
Abstract: KSE13006/13007 KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , lle c to r C urrent (DC) C o lle c to r C urrent (Pulse) Base C urrent C o lle c to r D is s ip a tio , urrent 'D C C urrent G ain 'C o lle c to r E m itte r S a tu ra tio n V oltag e Symbol V ceo(SUS) lc , a n d w id th P roduct Turn On Tim e S torage Tim e Fall T im e * P ulse Test: P W < 3 0 (V S , D , KSE13006/13007 KSE13006/13007 OC C U RRENT GAIN NPN SILICON TRANSISTOR B A SE EM ITTER SATURATIO N VOLTAGE C O LLEC T ... OCR Scan
datasheet

3 pages,
71.84 Kb

Y 13007 13007 m T 13007 E 13007 0 transistor E 13007 transistor 13007 j 13007 NPN Transistor 13007 p 13007 SE 13007 13007 TRANSISTOR SE 13007 TRANSISTOR EB 13007 KSE13006/13007 KSE13006/13007 KSE13006/13007 abstract
datasheet frame
Abstract: Philips Semiconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL SbE D yW7 BFQ32M BFQ32M 711062b 0DHS43Q 0DHS43Q 33T IPHIN DESCRIPTION PNP transistor In a TO-72 metal envelope , analyzers etc. The transistor features high power gain, high transition frequency and low noise up to high , temperature at the soldering point of the collector lead. November 1992 587 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ3PM ... OCR Scan
datasheet

3 pages,
78.24 Kb

GHz PNP transistor BFQ63 BFQ32M datasheet abstract
datasheet frame
Abstract: ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 SGSP577 Voss 200 V ^DS(on) 0.17 Q Id 20 A · HIGH SPEED , ROBOTICS. N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli cations , V V V A A A A W W /°C °C °C 'd b 'd m ( ' ) Id l m P.01 (*) "l"stg Ti Storage , otherwise specified) Parameters Test Conditions Min. Typ. Max. Unit OFF V (BR) d s s Drain-source ... OCR Scan
datasheet

5 pages,
151.64 Kb

SGSP577 SGSP577 abstract
datasheet frame
Abstract: POWER MOS TRANSISTOR TYPE SGSP577 SGSP577 V DSS ^D S(on) 200 V 0.17 ß Id 20 A · HIGH SPEED , ROBOTICS. N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli cations , 200 200 ±2 0 20 13 80 80 150 1.2 - 6 5 to 150 150 V V V A A A A W W /°C °C °C *D Id Idm (*) Idlm , o > > - I o o o o II Il > > > > o o o II Il C /3 C D II C /D CD Ciss ... OCR Scan
datasheet

5 pages,
151.11 Kb

SGSP577 SGSP577 abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
* Discrete Bipolar Electrical Parameters * * NPN Epitaxial Silicon Transistor * Package: D-PAK / TO-220 * High Voltage Power Switching Application *- .SUBCKT KSC5502D KSC5502D KSC5502D KSC5502D C B E q1 C B E VNPN d1 E C DFW .MODEL VNPN npn ( + IS = 1.4547E-12 4547E-12 4547E-12 4547E-12 BF = 58.7 NF = 1 + BR = 20.4 NR = 1 ) .MODEL DFW d ( + IS = 2.4E-13 4E-13 4E-13 4E-13 N = 1 RS = 0.052 + EG = 1.158 CJO =
www.datasheetarchive.com/files/fairchild/simulation-models/ksc5502d.lib
Fairchild 22/10/2012 1.22 Kb LIB ksc5502d.lib
) WITH 48K ROM, OTP, EPROM WITH ON SCREEN DISPLAY AND A/D CONVERTER 10 789 Datasheets 6 684 Datasheets BUT90 BUT90 BUT90 BUT90 HIGH POWER NPN SILICON TRANSISTOR 6 631
www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/587.htm
STMicroelectronics 31/03/1999 16.95 Kb HTM 587.htm
! BFQ181 BFQ181 BFQ181 BFQ181 Si NPN RF transistor in CEREC package ! VCE= 2.50V, IC= 5.00mA ! # GHz S MA R 50 ! .100 .8099 -18.8 13.5228 165.9 .0121 80.2 .9753 -7.5 .110 .8064 -20.6 13.4625 164.5 .0132 79.5 .9722 -8.3 .150 .7918 -27.8 13.1837 .5259 -47.8 2.200 .4079 176.6 3.0030 58.7 .0893 38.9 .5183 -50.8 2.400 Semiconductor Group ! Balanstr. 73, D-8000 Munich 80, Federal Republic of Germany
www.datasheetarchive.com/files/siemens/ehdata/spar/bfq181/a32v55m0.s2p
Siemens 02/07/1993 2.54 Kb S2P a32v55m0.s2p
! BFQ193 BFQ193 BFQ193 BFQ193, NPN RF silicon transistor in SOT 89 package ! Vce= 3 V, Ic= 20 mA ! # GHz S MA R 50 ! .060 .6780 -36.0 21.4503 153.9 .0245 73.5 .9028 -22.1 .080 .6410 -46.7 20.1464 146.6 .0311 69.6 .8514 -28.1 .100 .6047 -56.3 18.7742 .2826 -71.5 .900 .3186 170.6 3.5641 72.4 .1494 58.7 .2718 -73.9 1.000 Semiconductor Group ! Balanstr. 73, D-8000 Munich 80, Federal Republic of Germany ! ! kjs/db3tb#26;#26;
www.datasheetarchive.com/files/siemens/ehdata/spar/bfq193/q63v020m.s2p
Siemens 02/07/1993 2.25 Kb S2P q63v020m.s2p
! BFQ193 BFQ193 BFQ193 BFQ193, NPN RF silicon transistor in SOT 89 package ! Vce= 8 V, Ic= 20 mA ! # GHz S MA R 50 ! .060 .7169 -33.3 21.8542 154.7 .0235 74.3 .9064 -20.9 .080 .6785 -43.1 20.6133 147.5 .0300 70.3 .8580 -26.8 .100 .6391 -52.1 19.2629 .2902 166.7 3.3867 69.9 .1602 58.7 .2754 -72.5 1.200 .2999 153.5 2.8608 Semiconductor Group ! Balanstr. 73, D-8000 Munich 80, Federal Republic of Germany ! ! kjs/db3tb#26;#26;
www.datasheetarchive.com/files/siemens/ehdata/spar/bfq193/q68v020m.s2p
Siemens 22/08/1990 2.25 Kb S2P q68v020m.s2p
! BFQ193 BFQ193 BFQ193 BFQ193, NPN RF silicon transistor in SOT 89 package ! Vce= 3 V, Ic= 30 mA ! T359 SOT89 LV1/14 LV1/14 LV1/14 LV1/14 #1 CERFASS VCE=3V IC= 30mA ! # GHz S MA R 50 ! .060 .5795 -46.1 26.5897 148.1 .0228 71.3 .8517 -27.4 .080 .5412 -58.7 24.2947 140.0 .0283 67.5 .7825 -34.2 .100 .5028 -70.0 22.0678 133.1 .0330 64.6 .7151 -39.7 .150 .2910 -121.7 ! ! SIEMENS AG Semiconductor Group ! Balanstr. 73, D-8000 Munich
www.datasheetarchive.com/files/siemens/ehdata/spar/bfq193/q63v030m.s2p
Siemens 22/08/1990 2.3 Kb S2P q63v030m.s2p
! BF 579, PNP RF transistor in SOT 23 package ! VCE= -5.00V, IC= -2.00mA ! # GHz S MA R 50 ! .050 .8173 -19.4 6.2298 166.4 .0172 79.5 .9824 -4.9 .060 .8128 -23.1 6.1661 163.8 .0205 77.5 .9774 -5.9 .070 .8064 -26.9 6.1169 40.1 .1230 57.9 .6305 -31.5 1.800 .5226 145.1 .9227 38.6 .1263 58.7 SIEMENS AG Semiconductor Group ! Balanstr. 73, D-8000 Munich 80, Federal Republic of Germany ! !
www.datasheetarchive.com/files/siemens/ehdata/spar/bf579/rg5v05m0.s2p
Siemens 22/08/1990 2.48 Kb S2P rg5v05m0.s2p
! BF579 BF579 BF579 BF579, PNP RF transistor in SOT 23 package ! VCE= -5.00V, IC= -2.00mA ! # GHz S MA R 50 ! .050 .8173 -19.4 6.2298 166.4 .0172 79.5 .9824 -4.9 .060 .8128 -23.1 6.1661 163.8 .0205 77.5 .9774 -5.9 .070 .8064 -26.9 6.1169 40.1 .1230 57.9 .6305 -31.5 1.800 .5226 145.1 .9227 38.6 .1263 58.7 SIEMENS AG Semiconductor Group ! Balanstr. 73, D-8000 Munich 80, Federal Republic of Germany ! !
www.datasheetarchive.com/files/siemens/ehdata/spar/bf579/rg5v02m0.s2p
Siemens 02/07/1993 2.48 Kb S2P rg5v02m0.s2p
624 DCD3 22 C2 DMOD 182 .ENDS To complete the transistor model, the above die 22 C2 DMOD 228 .ENDS .MODEL DMOD D(IS=1E-25 1E-25 1E-25 1E-25, CJO=2.45E-16 45E-16 45E-16 45E-16, VJ=.76, M=.53, BV=45 , ISE=5E-15 5E-15 5E-15 5E-15, + NE=2.5) To complete the transistor model, the above die model must be 22 C2 DMOD 342 .ENDS .MODEL DMOD D(IS=1E-25 1E-25 1E-25 1E-25, CJO=2.45E-16 45E-16 45E-16 45E-16, VJ=.76, M=.53, BV=45 , ISE=5E-15 5E-15 5E-15 5E-15, + NE=2.5) To complete the transistor model, the above die model must be
www.datasheetarchive.com/files/agilent/hprfhelp/design/spice/msas.htm
Agilent 23/11/1999 60.09 Kb HTM msas.htm
2N3904 2N3904 2N3904 2N3904 - NPN switching transistor 2N4401 2N4401 2N4401 2N4401 - NPN switching transistor 2N5401 2N5401 2N5401 2N5401 - PNP high-voltage transistor 2N5550 2N5550 2N5550 2N5550 - NPN high-voltage transistors 2N5551 2N5551 2N5551 2N5551 - NPN high-voltage transistors 2PA733P 2PA733P 2PA733P 2PA733P - PNP general purpose transistor 2PC4617RJ 2PC4617RJ 2PC4617RJ 2PC4617RJ - NPN general purpose transistor 2PC945P 2PC945P 2PC945P 2PC945P - NPN general purpose transistor 74ALVC162334A 74ALVC162334A 74ALVC162334A 74ALVC162334A - 16-bit registered BB804W BB804W BB804W BB804W - VHF variable capacitance double diode BC516 BC516 BC516 BC516 - PNP Darlington transistor
www.datasheetarchive.com/files/philips/catalog/listing/283.html
Philips 17/02/2002 627.82 Kb HTML 283.html