NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SAMSUNG SEMICONDUCTOR INC 14E D 17^4142 00Q7317 00Q7317 «J | MPS3706 MPS3706 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V«o=20V • Collector Dissipation:'Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta -25°C) Characteristic Symbol Rating Unit Collector-Base \foltage VcBO 40 V Collector-Emitter Vbltage VcEO 20 V Emitter-Base Vbltage Vebo 5 V Collector Current ic 600 mA Collector , SEMICONDUCTOR 587 ... | OCR Scan |
1 pages, |
MPS3706 2N4400 transistor D 587 00Q7317 00Q7317 abstract |
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| Abstract: FC4901 FC4901 NPN SILICON RF TRANSISTOR FC4901 FC4901 NPN SOT-323 VHFUHF :S212 13dB , - 1 - FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) V 15 IC=1.0uA , mm mm A 0.30 0.40 B 1.15 1.35 C 2.00 2.40 D 0.65 H 2.20 , FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) LASERON MICRO ELECTRONIC CO., LTD - 3 - FC4901 FC4901 NPN SILICON RF TRANSISTOR SMITH VCE=5VIC=20mA, Zo=50 S21-FREQUENCY S21-FREQUENCY S22-FREQUENCY S22-FREQUENCY LASERON ... | Original |
7 pages, |
IC 7587 FC4901 d 1556 transistor s-parameter s11 s12 s21 6558 transistor c 2316 Transistor s-parameter RF Transistor s-parameter FC4901 abstract |
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| Abstract: wideband transistor BFQ32M BFQ32M - N AUER PHILIPS/DISCRETE blE D THERMAL RESISTANCE SYMBOL PARAMETER , transistor BFQ32M BFQ32M AMER PHILIPS/DISCRETE blE ]) DESCRIPTION PNP transistor in a TO-72 metal envelope with , transistor features high power gain, high transition frequency and low noise up to high frequencies. NPN , temperature at the soldering point of the collector lead. November 1992 587 This Material Copyrighted By Its , 0D31543 0D31543 bD7 M A P X Product specification PNP 4 GHz wideband transistor BFQ32M BFQ32M - N AHER PHILIPS/DISCRETE ... | OCR Scan |
3 pages, |
UHF pnp transistor BFQ63 BFQ32M BFQ32M abstract |
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| Abstract: 711002b GObV'ìMB 1Ã"3 I PH IN BST110 BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and , Pinning 1 = source 2 = gate 3 = drain I X _I -Vos max. 60 V ±vGSO max. 20 V ->D max. 0.25 A , 25 °C unless otherwise specified Drain-source breakdown voltage -'D= 10 MA; Vgs = 0 Drain-source , max. 20 V -'D max. 0.25 A -'dm max. 0.5 A ptot max. 0.83 W Tstg -65 to + 150 °C Tj max. 150 °C ... | OCR Scan |
3 pages, |
BST110 BST110 abstract |
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| Abstract: Manufacturer N AMER PHILIPS/DISCRETE N-P-N h.f. wideband transistor SSE D ^5313 QOlfllbl 4 I BFT25 BFT25 , wideband transistor ESE D â- bfci53131 QQlölbB & U BFT25 BFT25 10 F (dB) 7,5 2,5 10 -2 Jl T-31-17 T-31-17 0,6 , N AMER PHILIPS/DISCRETE BSE D ^53^31 ooiaisi b 'l BFT25 BFT25 T-3I-I7 J N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor ... | OCR Scan |
7 pages, |
BFT25 BFT25 abstract |
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| Abstract: Philips Semiconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL SbE D yW7 BFQ32M BFQ32M 711062b 0DHS43Q 0DHS43Q 33T IPHIN DESCRIPTION PNP transistor In a TO-72 metal envelope , analyzers etc. The transistor features high power gain, high transition frequency and low noise up to high , temperature at the soldering point of the collector lead. November 1992 587 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ3PM ... | OCR Scan |
3 pages, |
GHz PNP transistor BFQ63 BFQ32M 0DHS43Q BFQ32M abstract |
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| Abstract: VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended for , Drain-source voltage -vDs max. 60 V Gate-source voltage (open drain) ±vGSO max. 20 V Drain current (DC) -•d , ) ±vGSO max. 20 V Drain current (DC) -'D max. 0.25 A Drain current (peak) -'DM max. 0.5 A Total power , ; ~VGS = 0 to 10 V ^n typ. 4 ns toff typ. 10 ns Note 1. Transistor mounted on printed circuit board , 1^53=131 â-¡D53cì7b bb3 BAPX P-channel vertical D-MOS transistor N AUER PHILIPS/DISCRETE b?E » BST110 BST110 ... | OCR Scan |
3 pages, |
727 Transistor power values transistor wz BST110 BST110 abstract |
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| Abstract: /DISCRETE bTE D Philips Semiconductors PowerMOS transistor Fast recovery diode FET â- (^53^31 00306*13 Tifi , N AMER PHILIPS/DISCRETE hTE D Philips Semiconductors 1^53^31 0030AT0 0030AT0 â- APX Product Specification PowerMOS transistor BUK657-500B BUK657-500B Fast recovery diode FET_ general description N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly , configuration symbol PIN DESCRIPTION 1 gate 2 drain 3 source tab drain d limiting values Limiting values ... | OCR Scan |
5 pages, |
BUK657-500B 0030AT0 0030AT0 abstract |
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| Abstract: transistor £ BFT24 BFT24 ^- N AflER PHILIPS/DISCRETE hlE D DESCRIPTION NPN transistor in a plastic SOT37 , transistor BFT24 BFT24 N AMER PHILIPS/DISCRETE bRE D CHARACTERISTICS Tj = 25 °C unless otherwise specified. , BAPX Product specification NPN 2 GHz wideband transistor BFT24 BFT24 - N AMER PHILIPS/DISCRETE fa^E D lc=1 , systems, etc. The transistor features low current consumption (100 nA to 1 mA); due to its high , GHz wideband transistor BFT24 BFT24 N AHER PHILIPS/DISCRETE fc.'iE T> LIMITING VALUES In accordance with ... | OCR Scan |
8 pages, |
8891 702 P TRANSISTOR BFT24 Philips FA 291 BFT24 abstract |
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| Abstract: PINNING - SOT186A 1^39-0 J BUK 475-400B 475-400B PowerMOS transistor sbe d m 711002b 0d44b4"ì 300 hphin QUICK , PowerMOS transistor BUK475-400B BUK475-400B philips international THERMAL RESISTANCES 5LE D 711GflEb DDMMbSO DT2 â- , Transient thermal impedance. Zmhhs = f(t): parameter D = t/T March 1991 587 This Material Copyrighted By , Philips Components T-39-09 T-39-09 Preliminary specification PowerMOS transistor PHILIPS INTERNATIONAL SbE D , philips international I-1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ... | OCR Scan |
5 pages, |
BUK475-400B datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Protector Circuits AN587/D Analysis and Design of the Op Amp Current Source AN703/D Designing Line Operated, Regulated 5V/50A Switching Power Supply AN875/D Power Transistor Safe Operating V Off-Line Converter Transistors *AN954/D A Unique Converter Configuration AN976/D A New Design Considerations for a Two Transistor, Current Mode Forward Converter AN1314/D Bipolar Planar Power Transistor AN1327/D Very Wide Input Voltage Range, Off-Line Flyback www.datasheetarchive.com/files/motorola/design-n/lit/html/br135a/power.htm |
Motorola | 25/11/1996 | 9.06 Kb | HTM | power.htm |
| * Discrete Bipolar Electrical Parameters * * NPN Epitaxial Silicon Transistor * Package: D-PAK / TO-220 * High Voltage Power Switching Application *- .SUBCKT KSC5502D C B E q1 C B E VNPN d1 E C DFW .MODEL VNPN npn ( + IS = 1.4547E-12 4547E-12 4547E-12 4547E-12 BF = 58.7 NF = 1 + BR = 20.4 NR = 1 .6368 XTB = 1.1034 EG = 0.95 + XTI = 3 TF = 1.4076E-8 4076E-8 4076E-8 4076E-8 ) .MODEL DFW d ( + IS = 2 www.datasheetarchive.com/files/fairchild/simulation-models/ksc5502d.lib |
Fairchild | 22/10/2012 | 1.22 Kb | LIB | ksc5502d.lib |
| Analysis and Design of the Op Amp Current Source AN587/D (363.0kB) 0 100 Optimization for 1.0 kV Off-Line Converter Transistors AN951/D (250.0kB) 0 100 Introduction to Insulated Gate Bipolar Transistors AN1541/D (184.0kB) 0 100 /D (49.0kB) 1 100 Power Transistor Safe Operating Area: Special Recovery Rectifiers Extend Power Transistor SOA AN952/D (359.0kB) 0 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/others.htm |
On Semiconductor | 30/11/2007 | 21.62 Kb | HTM | others.htm |
| * * Double resistor equipped NPN/PNP transistor * IC = 500 mA * VCEO = 5 V * hFE = min. 70 @ 5V/50m * Q1 1 2 3 RET1 D1 2 1 DIODE1 * .MODEL RET1 NPN + IS = 1.451E-013 451E-013 451E-013 451E-013 + NF = 0.9728 + ISE = 1.154E-014 154E-014 154E-014 154E-014 + NE = 1.587 + BF = 390 + IKF = 2.8 + VAF = 90 + NR = 0.972 + ISC = 1E-019 1E-019 1E-019 1E-019 + NC .85 .MODEL DIODE1 D + IS = 8.285E-015 285E-015 285E-015 285E-015 + N = 1.03 + BV = 1000 + IBV = 0.001 + RS = 500 + CJO = 0 3 * Q2 1 2 3 RET2 D2 1 2 DIODE2 * .MODEL RET2 PNP + IS = 1.451E-013 451E-013 451E-013 451E-013 + NF = 0.9728 + ISE www.datasheetarchive.com/download/12357188-596957ZC/30588.zip (PIMC31_NPN.prm) |
NXP | 23/10/2012 | 252.45 Kb | ZIP | 30588.zip |
| ST | TRANSISTOR PROTECTION BY TRANSIL Application Note TRANSISTOR PROTECTION BY TRANSIL AN587 Text Format APPLICATION NOTE AN587/0898 TRANSISTOR PROTECTION BY inductive load. The switch can be a bipolar or a MOS transistor. The purpose of this paper is to through the coil when the transistor switches off. FIG.3 shows the current variation versus time. t1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3599-v3.htm |
STMicroelectronics | 25/05/2000 | 7.17 Kb | HTM | 3599-v3.htm |
| ST | TRANSISTOR PROTECTION BY TRANSIL Application Note TRANSISTOR PROTECTION BY TRANSIL AN587 Document Format Size Document Number /08/1998 3 Raw Text Format APPLICATION NOTE AN587/0898 TRANSISTOR load. The switch can be a bipolar or a MOS transistor. The purpose of this paper is to calculate the M < Ip is the current through the coil when the transistor switches off. FIG.3 shows the current www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3599.htm |
STMicroelectronics | 20/10/2000 | 7.7 Kb | HTM | 3599.htm |
| * * * * PBHV8215Z PBHV8215Z PBHV8215Z PBHV8215Z * * NXP Semiconductors * * High voltage BISS-transistor NPN * IC = 2 A * VCEO = 150 V * hFE = 100 - 250 @ 10V/50 * Q1 1 2 3 PBHV8215Z PBHV8215Z PBHV8215Z PBHV8215Z D1 2 1 DIODE * * Diode D1 is dedicated to improve modeling in reverse * mode + NF = 0.9923 + ISE = 1.587E-014 + NE = 1.407 + BF = 256.4 + IKF = 0.38 + VAF = 5.7 + NR -008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.79 .MODEL DIODE D + IS = 5.797E-014 797E-014 797E-014 797E-014 www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (PBHV8215Z.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * * PBHV8215Z PBHV8215Z PBHV8215Z PBHV8215Z * * NXP Semiconductors * * High voltage BISS-transistor NPN * IC = 2 A * VCEO = 150 V * hFE = 100 - 250 @ 10V/50 * Q1 1 2 3 PBHV8215Z PBHV8215Z PBHV8215Z PBHV8215Z D1 2 1 DIODE * * Diode D1 is dedicated to improve modeling in reverse * mode + NF = 0.9923 + ISE = 1.587E-014 + NE = 1.407 + BF = 256.4 + IKF = 0.38 + VAF = 5.7 + NR -008 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.79 .MODEL DIODE D + IS = 5.797E-014 797E-014 797E-014 797E-014 www.datasheetarchive.com/download/28222960-596966ZC/41781.zip (PBHV8215Z.prm) |
NXP | 23/10/2012 | 188.74 Kb | ZIP | 41781.zip |
| ST | TRANSISTOR PROTECTION BY TRANSIL AN587 TRANSISTOR PROTECTION BY TRANSIL 587/0898 TRANSISTOR PROTECTION BY TRANSIL [ B. Rivet Figure 1 : Basic Diagram L,r +Vcc or Figure 3 load. The switch can be a bipolar or a MOS transistor. The purpose of this paper is to calculate the L ) + T Y U I P + V BR min - V CC r N M < Ip is the current through the coil when the transistor in the TRANSIL can be expressed by : W = T Y U V BR min y L r N M < y I S D I P + T Y U V BR min www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3599-v1.htm |
STMicroelectronics | 02/04/1999 | 5.32 Kb | HTM | 3599-v1.htm |
| ST | TRANSISTOR PROTECTION BY TRANSIL AN587 TRANSISTOR PROTECTION BY TRANSIL 587/0898 TRANSISTOR PROTECTION BY TRANSIL [ B. Rivet Figure 1 : Basic Diagram L,r +Vcc or Figure 3 load. The switch can be a bipolar or a MOS transistor. The purpose of this paper is to calculate the L ) + T Y U I P + V BR min - V CC r N M < Ip is the current through the coil when the transistor in the TRANSIL can be expressed by : W = T Y U V BR min y L r N M < y I S D I P + T Y U V BR min www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3599-v2.htm |
STMicroelectronics | 14/06/1999 | 5.29 Kb | HTM | 3599-v2.htm |