500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N2221AUB Microsemi Corporation Transistor visit Digikey Buy
2N6988 Microsemi Corporation Transistor visit Digikey Buy
2N3810L Microsemi Corporation Transistor visit Digikey Buy
2N6990 Microsemi Corporation Transistor visit Digikey Buy
2N2222AUB Microsemi Corporation Transistor visit Digikey Buy
BYI-1F Microsemi Corporation Transistor visit Digikey Buy

transistor D 587

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 240V AC) w DC type (10 to 30V DC) Output q NPN open-collector transistor w PNP open-collector transistor e AC non-contact (thyristor) output Connection q Cable type w Connector type IP67 achieved , open-collector transistor UZC250 NPN open-collector transistor PNP open-collector transistor 10 to 30V DC UZC240 NPN open-collector transistor UZC2405 NPN open-collector transistor , transistor UZC230 1.5m 4.921ft. (*1) Output operation NPN open-collector transistor UZC2505 NAiS
Original
UZZ112 UZC151 UZC2305 UZC102 UZC8121 UZC230A SUS304 UZZ1110 UZZ111 UZZ1120
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor , high density surface mount assembly since the transistor has been applied small mini mold package , sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4227) D o c u m e n t No. P10371 E J2 V 0 D S 0 0 (2nd e ditio n ) (P re v io u s No. T C -2 4 0 3 ) D ate P u b lish ed J u ly 1 995 P P -
OCR Scan
3181 R33 A 564 transistor transistor A 564 SC-70 2SC4227-T2
Abstract: Transistor Arrays & MOSFET Arrays . 24 3-1 Thyristors , . 22 2-3 Power Transistor Arrays & MOS FET Arrays . , Transistors 2-1-1 Transistors for Audio Amplifiers Chip Single Transistor General 2SA1725 2SA1726 , . Part No. b. Lot No. B D C S E (unit: mm) 15 (41) 0.8 20.0min 4.1max 2 , ±0.1 (unit: mm) 23 2-3 Transistor Arrays & MOS FET Arrays 2-3-1 For Sink Drive Sanken Electric
Original
2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 em 234 stepper TFD312S-N TFD312S-O TM1041S-L TM1041S-R TM1061S-L TM1061S-R
Abstract: Transistor Arrays & MOSFET Arrays . 24 3-1 Thyristors , . 22 2-3 Power Transistor Arrays & MOS FET Arrays . , Transistors 2-1-1 Transistors for Audio Amplifiers Chip Single Transistor General 2SA1725 2SA1726 , lead roots) a. Part No. b. Lot No. B D C S E (unit: mm) 15 (41) 0.8 20.0min , . Lot No. a. Part No. b. Lot No. B C E (unit: mm) 23 2-3 Transistor Arrays & MOS FET Sanken Electric
Original
8002 1018 AUDIO amplifier se125n voltage doubler bridge 2sa2003 varistor 560-2 SE090 O01ED0 H1-O01ED0-0106030ND
Abstract: FC4901 NPN SILICON RF TRANSISTOR FC4901 NPN SOT-323 VHFUHF :S212 13dB , - 1 - FC4901 NPN SILICON RF TRANSISTOR (TA=25) V 15 IC , SOT-323 mm mm A 0.30 0.40 B 1.15 1.35 C 2.00 2.40 D , 0.25 - 2 - FC4901 NPN SILICON RF TRANSISTOR (TA=25) LASERON MICRO ELECTRONIC CO., LTD - 3 - FC4901 NPN SILICON RF TRANSISTOR SMITH VCE=5VIC=20mA, Zo=50 S21-FREQUENCY Laseron Micro Electronic
Original
RF Transistor s-parameter transistor c 2316 Transistor s-parameter transistor 9747 transistor 5457 s-parameter s11 s12 s21 YK50-100 S22-FREQUENCY S12-FREQU
Abstract: . 19 Transistor Arrays . 20 · Sink Drive Transistor Arrays . 20 · Source Drive Transistor Arrays . 20 · H-Bridge Transistor Arrays . 20 · 3-Phase Motor Driver Transistor Arrays . 20 · Stepper Motor Dual Power Supply Drive Transistor Arrays . 20 · Surface Mount Transistor Arrays (SD Series Sanken Electric
Original
STR83159 HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c O01EC0 STR7001 STR7002 STR7003 STR7101 STR7102
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed , transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 , |S2ie|2 = 12 dBTYP . @ f = 1 GHz, Vce = 3 V, Ic = 7 mA C M d CO +i o o 00+ T c v J _L Small , person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4227) D -
OCR Scan
transistor NEC D 587 transistor c 3181 2SC4227-T1 4227-T2
Abstract: (°) p (nm) d (nm) 30/35 45/50 626 636 571 574 626 636 571 574 Lens , °C) Typical Emitting Viewing Angle Wavelength 2·1/2 (°) d (nm) p (nm) Lens Color Absolute Maximum , Intensity (mcd) IF = 20 mA p (nm) 587 590 Transparent 587 590 Transparent 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Yellow transparent 50 590 594 Transparent 50 2200 587 590 Transparent 50 Toshiba
Original
TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TLRME20CP TLSH20TP TLRMH20TP
Abstract: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier , MHz Note: VC = 5 V, lc = 20 mA E 1. Marking of 2SC5080 is â'Z D -â'. Attention: This , when handling this transistor. HITACHI 2 2SC5080 S Parameter (VC = 5 V, Ic = 5 mA, Z0 = 50 E , 0.419 -115.9 11.75 111.0 0.0507 53.9 0.480 -58.7 800 0.389 -134.1 9.29 , 0.354 -171.4 5.63 97.1 0.0806 58.7 0.274 -72.8 1600 0.356 -179.7 4.98 -
OCR Scan
Abstract: Optical Characteristics (Ta = 25°C) Typical Emitting Viewing Angle Wavelength 21/2 (°) d (nm) p (nm , Wavelength 21/2 (°) d (nm) p (nm) 4760 626 636 Red transparent 613 623 Transparent , °C) Typical Emitting Viewing Angle Wavelength 21/2 (°) d (nm) p (nm) 1200 Lens Color Absolute Maximum DC Forward Current Rating IF (mA) @Ta = 25°C 12 20 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 7 590 Transparent -
Original
transistor SMD t04 transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TLSE20TP TLRME20TP TLRE20TP TLSH38TP TLRMH38TP TLSH17TP
Abstract: specification NPN 5 G H z wideband transistor BFP90A PHILIPS INTERNATIONAL SbE D 7110B2b , Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in hermetically sealed, sub-miniature SOT173 and SOT173X micro-stripline envelopes. It is designed for R F wideband amplifiers and applications up to 1 GHz. The transistor , 515 Philips Semiconductors Product specification NPN 5 G H z wideband transistor PH ILIPS -
OCR Scan
TRANSISTOR c 5578 B 603 transistor npn transistor 3bn TRANSISTOR C 4460 AG TRANSISTOR 1702 NPN transistor 00KS3SS
Abstract: 21/2 (°) d (nm) p (nm) 626 574 626 636 571 40 636 571 30 574 Lens , Characteristics (Ta = 25°C) Typical Emitting Viewing Angle Wavelength 21/2 (°) d (nm) p (nm) Lens Color , Wavelength 21/2 (°) d (nm) p (nm) 1200 476 1300 1530 4000 476 1350 Lens Color Absolute Maximum DC Forward Current Rating IF (mA) @Ta = 25°C 587 590 Transparent 50 590 Transparent 50 590 Yellow transparent 50 590 Transparent 50 587 590 Transparent Toshiba
Original
TCD1254GFG TCD2964 TCD2716DG transistor SMD t05 TCD2712DG tcd2563bfg SCE0004I TLRMH17TP TLRH17TP TLSE17TP TLRME17TP TLRE17TP
Abstract: wideband transistor BFP90A N AMER PHILIPS/DISCRETE November 1992 519 b'lE D Philips , wideband transistor â'" DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] ) PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is designed for RF wideband amplifiers and applications up to 1 GHz. PIN The transistor features low ,   bbSBTBl 0 0 3 m 7 0 75H W A P X Product specification NPN 5 GHz wideband transistor BFP90A -
OCR Scan
500MH
Abstract: PRELIMINARY DATA SHEET_ \F | f / HETERO JUNCTION FIELD EFFECT TRANSISTOR , Drain Current Gate Current Total Power Dissipation ds 4.0 gs V -3.0 V Id I d , Id 10 20 mA Input Power Pin 0 dBm Drain to Source Voltage D ocum ent No , , c "O 'ra c OS aa â  c S _ g ra 'rät: > (D ^ c i ira E ;W 4 V gs , NE24283B Gain Calculations M SG. = i ^ i K = I Sl2| MAG. = - L § d _ I Sid 1 + 1 A -
OCR Scan
transistor d 2389 P12778EJ1V0D C10535E
Abstract: Orange, transparent 50 Typical Emitting Wavelength Open Rank Rank Specified d (nm) p , 612 Transparent 50 605 612 Transparent 50 587 590 Transparent 30 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 50 587 590 Transparent 30 587 Toshiba
Original
CIPS299CF600 smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 78 S308BS621 CIPS27BSA00 CIPS54CS301 CIPS109CS302 CIPS109CS600 CIPS218CF602
Abstract: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features , electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor , 55.8 57.3 58.7 60.4 61.2 62.4 S22 MAG. 0.826 0.619 0.480 0.395 0.337 0.300 0.274 0.255 0.242 0.232 ANG. ­31.8 ­49.8 ­58.7 ­63.8 ­67.6 ­70.1 ­72.8 ­74.6 ­77.1 ­79.9 3 2SC5080 When using this document , Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax Hitachi
Original
SL6 TRANSISTOR Hitachi DSA002746 Transistor D 799 D-85622
Abstract: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier , transistor. HITACHI 2 2SC5080 S Parameter (VOE= 5 V, Ic = 5 mA, Z0 = 50 Q.) Freq. (MHz) 200 400 600 , 53.9 54.5 55.8 57.3 58.7 60.4 61.2 62.4 S22 MAG. 0.826 0.619 0.480 0.395 0.337 0.300 0.274 0.255 0.242 0.232 ANG. -31.8 - 49.8 -58.7 -63.8 -67.6 -70.1 -72.8 -74.6 -77.1 -79.9 HITACHI 3 2SC5080 , : 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D -
OCR Scan
Abstract: TRANSISTOR POWER DERATING P d(W), p o w e r d is s ip a t i o n 589 ELECTRONICS , KSE13006/13007 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic , , lc = 5A = Im = 1A tf > II 587 ELECTRONICS KSE13006/13007 DC CURRENT GAIN NPN SILICON TRANSISTOR BA S E EMITTER SATURATION VOLTAGE CO LLECTO R EMITTER SATURATION VOLTAGE IciA), C O -
OCR Scan
EB 13007 E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR KSE13Q06 KSE13007 KSE13006
Abstract: SAMSUNG SEMICONDUCTOR INC 14E D 17^4142 00Q7317 «J | MPS3706 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR â'¢ Collector-Emitter Voltage: V«o=20V â'¢ Collector Dissipation:'Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta -25°C) Characteristic Symbol Rating Unit Collector-Base \foltage VcBO 40 V Collector-Emitter Vbltage VcEO 20 V Emitter-Base Vbltage Vebo 5 V Collector Current ic 600 , : Pulse Width -
OCR Scan
2N4400 T-29-21
Abstract: X BST110 P-channel vertical D-MOS transistor N AMER P H I L I P S / D I S C R E T E 6 8 , ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope , (open drain) 20 V 0.25 A Drain current (DC) ± v GSO max. max. ~*D Total power dissipation up to Tgppju â'"25 °C ^ to t max. 0.83 W Drain-source ON-resistance - l D = 200 mA; - V GS= 10 V ^DSon typ. max. 7.5 S2 10 n T ransfer admittance - l D = 2 0 0 m A ;- V -
OCR Scan
GSO 69 53T31
Showing first 20 results.