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transistor BF245

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BF245 N-CHANNEL JUNCTION FET arrnwiiijijswwwwwwMT'fi'iiw 111i n iniari'inrnnrnnrinnmnniiriririnnrnnnriiimiTiBri i'iiiiiuu DESCRIPTION BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature VDS 3ÖV VDG 30V VGS 30V ID 25mA IG ì Dm A Ptot 300mW Tj,Tstg -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS ... OCR Scan
datasheet

1 pages,
48.79 Kb

transistor gds "igss 5 na" BF245 TRANSISTOR transistor BF245 A BF245 fet BF245 transistor BF245 TEXT
datasheet frame
Abstract: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO Field for VDS VDG VGS ID IG Ptot Tj,Tstg BF245 N-CHANNEL JUNCTION FET TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature 30V 30V 30V 25mA 10mA 300mW -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Gate-Source Breakdown Voltage ... OCR Scan
datasheet

1 pages,
52.23 Kb

FET TO-92 BF245 TRANSISTOR Fet BF245 transistor BF245 BF245 TEXT
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Abstract: LrKU N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voi tage VDG 30V Gate-Source Voltage VGS 30V Drain Current ID 25mA Gate Current IG 10mA Total Power Dissipation Ptot 300mW Operating & Storage Junction Temperature Tj,Tstg -65 to + 150°C ELECTRO-OPTICAL CHARACTERISTICS_(Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT CONDITIONS ... OCR Scan
datasheet

1 pages,
48.51 Kb

UHF transistor FET transistor BF245 A Fet BF245 BF245 transistor BF245 TEXT
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Abstract: FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM, CANAL N BF245 - LF and HF amplification Amplification BF et HF VDS 30 V max IDSS 2 . 25 mA ( .VgS = 0 ) in 3 groups en 3 groupes C12S 1,1 pF typ. Plastic case F 139 B - See outline drawing CB-76 CB-76 on last pages Bottier plastique Voir dessin coté CB-76 CB-76 dernières pages Maximum power dissipation Dissipation de puissance maximale 50 100 1 50 Tamb(°C) Gl» Weight Masse 9 Bottom view Vue de dessous ... OCR Scan
datasheet

5 pages,
88.12 Kb

BF 245 B transistor a effet de champ C12S transistor Bf-245 transistor BF 245 c BF 245 C BF245 canal n BF245 TRANSISTOR transistor BF245 A transistor BF245 BF245 bf 245 transistor BF 245 TEXT
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Abstract: change if R1 is increased? Additional information BF245 transistor data site (parameters, data sheet, spice model, etc.): Transistor data , laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and nonlinear distortions of the amplifier , resistors RG, RS and RD are used for transistor polarization and the Q-point setting. Fig. 1 Transistor ... Original
datasheet

4 pages,
107.94 Kb

TRANSISTOR DATA simulation model electrolytic capacitor transistor BF245 A Frequency Generator 1MHz BF245 spice model BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 B spice BF245 BF245A spice BF245 spice BF245 A spice TEXT
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Abstract: Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE ... ON Semiconductor
Original
datasheet

43 pages,
468.96 Kb

transistor equivalent 2n5551 transistor c-1000 applications of Transistor BC108 Transistor 2N2905A TEXT
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant ... ON Semiconductor
Original
datasheet

36 pages,
400.87 Kb

mps3646 equivalent MPS3646 mps4123 opposite TEXT
datasheet frame
Abstract: . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , VENBL = VCC TA = 25°C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA , °C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 ­5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300 ­10 ­15 ... ON Semiconductor
Original
datasheet

39 pages,
386.14 Kb

BC450 spice 2n2222a spice model BJT 2N2222 beta bc547 spice bc108 spice model BF245 spice 2N3637 transistor spice BC140 SPICE BF245 B spice BC559 SPICE BF245 A spice BC238 spice MRF9411 EQUIVALENT MDC5001T1 bc237 SPICE model MDC5001T1 bc237 SPICE MDC5001T1 BF256B spice model MDC5001T1 BC238 spice model MDC5001T1 SPICE model BC237 MDC5001T1 bc547 spice model MDC5001T1 MDC5001T1 MDC5001T1 TEXT
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN5111T1 MUN5111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE ... ON Semiconductor
Original
datasheet

38 pages,
377.23 Kb

TEXT
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE ... ON Semiconductor
Original
datasheet

39 pages,
366.39 Kb

2N930 NPN transistor FREE transistor 2N5458 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
*SRC=MMBT2907A MMBT2907A;DI_MMBT2907A MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A MMBT2907A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 MMBTA56 PNP (IS=50.8f TR=97.8n EG=1.12 ) *SRC=BC856BW BC856BW;DI_BC856BW BC856BW;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor .67 Q2 col base2 emtr QPWR .33 RBS base base2 18.5 .MODEL QPWR PNP (IS=618f NF=1.00 BF=245 VAF=180
/datasheets/files/diodes-inc/spice-model/spicemodels_transistor-bjt-master-table_transistors-55v-to-100v.txt
Diodes, Inc. 04/09/2012 52.47 Kb TXT spicemodels_transistor-bjt-master-table_transistors-55v-to-100v.txt
*SRC=MMBT2907A MMBT2907A;DI_MMBT2907A MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A MMBT2907A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 MMBTA56 PNP (IS=50.8f 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_BC856BW BC856BW PNP (IS=3.90f NF=1.00 BF=408 VAF=161 + 18.5 .MODEL QPWR PNP (IS=618f NF=1.00 BF=245 VAF=180 + IKF=2.13 ISE=147p NE=2.00 BR=4.00 NR=1.00 +
/datasheets/files/diodes-inc/spice-model/transistor-bjt-master-table_transistors-55v-to-100v.txt
Diodes, Inc. 21/10/2012 52.47 Kb TXT transistor-bjt-master-table_transistors-55v-to-100v.txt
No abstract text available
/datasheets/files/spicemodels/misc/models/mcebjt.lib
Spice Models 17/09/2010 51.12 Kb LIB mcebjt.lib
ECG228A ECG228A 1 2 3 * TERMINALS: C B E * 350 Volt 1 Amp SiNPN Power Transistor 04-02-1996 Q1 1 2 3 *MJE340 MJE340 MCE Power Transistor Subcircuit 1/30/96 * TERMINALS: C B E *Si 20.8W 300V 500mA pkg:TO-220 2
/datasheets/files/spicemodels/misc/modelos/mcebjt.lib
Spice Models 21/02/2008 197.99 Kb LIB mcebjt.lib
No abstract text available
/datasheets/files/diodes-inc/spice-model/spicemodels_all.txt
Diodes, Inc. 04/09/2012 1443.84 Kb TXT spicemodels_all.txt
No abstract text available
/datasheets/files/diodes-inc/spice-model/all.txt
Diodes, Inc. 23/10/2012 1445.73 Kb TXT all.txt