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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor BF245

Catalog Datasheet MFG & Type PDF Document Tags

transistor BF245

Abstract: fet BF245 BF245 N-CHANNEL JUNCTION FET arrnwiiijijswwwwwwMT'fi'iiw 111i n iniari'inrnnrnnrinnmnniiriririnnrnnnriiimiTiBri i'iiiiiuu DESCRIPTION BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature VDS 3ÃV VDG 30V VGS 30V ID 25mA IG ì Dm A Ptot 300mW Tj,Tstg -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS
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transistor BF245 fet BF245 transistor BF245 A BF245 TRANSISTOR transistor gds

BF245

Abstract: transistor BF245 G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO Field for VDS VDG VGS ID IG Ptot Tj,Tstg BF245 N-CHANNEL JUNCTION FET TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature 30V 30V 30V 25mA 10mA 300mW -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Gate-Source Breakdown Voltage
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FET TO-92

transistor BF245

Abstract: BF245 LrKU N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voi tage VDG 30V Gate-Source Voltage VGS 30V Drain Current ID 25mA Gate Current IG 10mA Total Power Dissipation Ptot 300mW Operating & Storage Junction Temperature Tj,Tstg -65 to + 150°C ELECTRO-OPTICAL CHARACTERISTICS_(Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT CONDITIONS
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UHF transistor FET

transistor BF 245

Abstract: bf 245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM, CANAL N BF245 - LF and HF amplification Amplification BF et HF VDS 30 V max IDSS 2 . 25 mA ( .VgS = 0 ) in 3 groups en 3 groupes C12S 1,1 pF typ. Plastic case F 139 B - See outline drawing CB-76 on last pages Bottier plastique Voir dessin coté CB-76 dernières pages Maximum power dissipation Dissipation de puissance maximale 50 100 1 50 Tamb(°C) Gl» Weight Masse 9 Bottom view Vue de dessous
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transistor BF 245 bf 245 transistor BF 245 c BF245 canal n BF 245 C transistor Bf-245

BF245 A spice

Abstract: BF245 spice change if R1 is increased? Additional information BF245 transistor data site (parameters, data sheet, spice model, etc.): Transistor data , laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and nonlinear distortions of the amplifier , resistors RG, RS and RD are used for transistor polarization and the Q-point setting. Fig. 1 Transistor
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BF245 A spice BF245 spice electronic power generator using transistor BF245A spice BF245 B spice BF245 spice model

Transistor 2N2905A

Abstract: BC237 Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE
ON Semiconductor
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Transistor 2N2905A BC237 applications of Transistor BC108 transistor equivalent 2n5551 transistor c-1000 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1

BC237

Abstract: transistor BC107 specifications MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant
ON Semiconductor
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MPS3646 transistor BC107 specifications mps4123 opposite transistor equivalent book 2N5401 2n3819 equivalent transistor mps3646 equivalent 226AA MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1

bc547 spice model

Abstract: SPICE model BC237 . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , VENBL = VCC TA = 25°C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA , °C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 ­5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300 ­10 ­15
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bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MDC5001T1 MMPQ3799 MMSV3401T1 MPF970 MPF971 MPF3821

BC237

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN5111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE
ON Semiconductor
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70/SOT MPF3822 MPF4856 MPF4857 MPF4858 MPF4859

transistor 2N5458

Abstract: BC237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE
ON Semiconductor
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transistor 2N5458 2N930 NPN transistor FREE BC848 MPF4860 MPF4861 MPQ6501 MPS3638 MPS3866 MPS4123

transistor marking wt

Abstract: BC237 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10­23 j/°K) T , transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be
ON Semiconductor
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transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 MOTOROLA TRANSISTOR 2N3819 2N2222 MPS2222 npn transistor hie for bc547b MPS6521 MPS6523 MPS6520/D MPS4125 MPS4258 MPS5771

BC237

Abstract: 2771 040 0002 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack
ON Semiconductor
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2771 040 0002 level shifter 2N5401 SC-70/SOT-323 MUN5211T1 MPS6520 2N5551 MPS2222A 2N5401

BC237

Abstract: 2N2904 PNP Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon COLLECTOR 3 2 , ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack
ON Semiconductor
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2N2904 PNP Transistor MPS3906 BAS16LT1 MMBF4391LT1 MMBF5457LT1 2N5486 MMBT5551LT1

BC237

Abstract: transistor bc107b equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon MPSA20 , en2 ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant , curves indicate IC­VCE limits of the transistor that must be observed for reliable operation. Collector , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack
ON Semiconductor
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transistor bc107b equivalent BC107B, MOTOROLA MMBV2103LT1 MMPQ3725 MMBV3401LT1 MMBFJ175LT1 MPF4391RLRA 2N5639

BC237

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR · The SC­59 package can be
ON Semiconductor
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MUN2111T1 2N5638RLRA MPQ6502 MPS3638A BF224 MPS4124

BC237

Abstract: MPS-A70 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 , the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan
ON Semiconductor
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MPS-A70 equivalent MPSA70 MPS4126 MPS3640 MPS6530 MPS6531 MPS6562

BC237

Abstract: 2n2904 2n2905 MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon COLLECTOR 3 2 , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan
ON Semiconductor
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2n2904 2n2905 K 2056 BC547 hie hre hfe TO-226-AE BC338 hie hre hfe MPS3904 MPS6568A MPS6571 MPS6595 MPS8093 MPSA16

MPQ6842

Abstract: MC3001 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon , Voltage Emitter ­ Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Each Transistor , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan , transistor and adhesive tape visible. Flat side of transistor and carrier strip visible (adhesive tape on
ON Semiconductor
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MPQ6842 MC3001 MPSH04 MPSH07A MPSH20 MPSH24 MPSH34

Transistor BC107 motorola

Abstract: transistor motorola 2n3053 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , 160 1.7 5.6 - 3.0 6.5 MHz pF pF dB RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan , transistor and adhesive tape visible. Flat side of transistor and carrier strip visible (adhesive tape on
ON Semiconductor
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Transistor BC107 motorola transistor motorola 2n3053 symbol transistor BC108 BC107 Transistor application notes 2N2904 transistor TO92 MPSA18 BC547 MPSA18 MPSH69 MSA1022 MSB709 MSB710 MSB1218A

Transistor BC107 motorola

Abstract: transistor motorola 2n3053 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor NPN Silicon 14 13 12 11 , VCEO VCES VEBO IC One Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and , ­116 THERMAL CHARACTERISTICS Characteristic Symbol Max One Transistor Thermal Resistance, Junction to Ambient , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan
ON Semiconductor
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2N2369 transistor pulse generator Transistor BC107b motorola Gate Driver SOT-363 Marking Code G MPQ3725 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624
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