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TBF24-5PSX ITT Interconnect Solutions Circular Connector Adapter, 16 Contact(s), Aluminum Alloy, Male-Female visit Digikey
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transistor BF245

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BF245 N-CHANNEL JUNCTION FET arrnwiiijijswwwwwwMT'fi'iiw 111i n iniari'inrnnrnnrinnmnniiriririnnrnnnriiimiTiBri i'iiiiiuu DESCRIPTION BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature VDS 3ÃV VDG 30V VGS 30V ID 25mA IG ì Dm A Ptot 300mW Tj,Tstg -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS -
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fet BF245 transistor BF245 A BF245 TRANSISTOR transistor gds
Abstract: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO Field for VDS VDG VGS ID IG Ptot Tj,Tstg BF245 N-CHANNEL JUNCTION FET TO-92 GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Gate Current Total Power Dissipation Operating & Storage Junction Temperature 30V 30V 30V 25mA 10mA 300mW -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Gate-Source Breakdown Voltage -
OCR Scan
FET TO-92
Abstract: LrKU N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voi tage VDG 30V Gate-Source Voltage VGS 30V Drain Current ID 25mA Gate Current IG 10mA Total Power Dissipation Ptot 300mW Operating & Storage Junction Temperature Tj,Tstg -65 to + 150°C ELECTRO-OPTICAL CHARACTERISTICS_(Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT CONDITIONS -
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UHF transistor FET
Abstract: FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM, CANAL N BF245 - LF and HF amplification Amplification BF et HF VDS 30 V max IDSS 2 . 25 mA ( .VgS = 0 ) in 3 groups en 3 groupes C12S 1,1 pF typ. Plastic case F 139 B - See outline drawing CB-76 on last pages Bottier plastique Voir dessin coté CB-76 dernières pages Maximum power dissipation Dissipation de puissance maximale 50 100 1 50 Tamb(°C) Gl» Weight Masse 9 Bottom view Vue de dessous -
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transistor BF 245 bf 245 transistor BF 245 c BF245 canal n BF 245 C transistor Bf-245
Abstract: change if R1 is increased? Additional information BF245 transistor data site (parameters, data sheet, spice model, etc.): Transistor data , laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and nonlinear distortions of the amplifier , resistors RG, RS and RD are used for transistor polarization and the Q-point setting. Fig. 1 Transistor -
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BF245 A spice BF245 spice BF245A spice BF245 B spice BF245 spice model Frequency Generator 1MHz
Abstract: Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE ON Semiconductor
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Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant ON Semiconductor
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MPS3646 mps4123 opposite transistor BC107 specifications 2n3819 equivalent transistor mps3646 equivalent transistor equivalent book 2N5401 226AA MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1
Abstract: . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , VENBL = VCC TA = 25°C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA , °C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 ­5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300 ­10 ­15 ON Semiconductor
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bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE model bc237 SPICE MDC5001T1 MMPQ3799 MMSV3401T1 MPF970 MPF971 MPF3821
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN5111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE ON Semiconductor
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70/SOT MPF3822 MPF4856 MPF4857 MPF4858 MPF4859
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE ON Semiconductor
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transistor 2N5458 2N930 NPN transistor FREE BC848 MPF4860 MPF4861 MPQ6501 MPS3638 MPS3866 MPS4123
Abstract: 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10­23 j/°K) T , transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , us 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be ON Semiconductor
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transistor marking wt modes of operation of transistor BC177 motorola application note AN-569 2N2222 MPS2222 npn transistor BC547 collector characteristic curve hie for bc547b MPS6521 MPS6523 MPS6520/D MPS4125 MPS4258 MPS5771
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack ON Semiconductor
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2771 040 0002 level shifter 2N5401 SC-70/SOT-323 MUN5211T1 MPS6520 2N5551 MPS2222A 2N5401
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon COLLECTOR 3 2 , ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 , us 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack ON Semiconductor
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2N2904 PNP Transistor MPS3906 BAS16LT1 MMBF4391LT1 MMBF5457LT1 2N5486 MMBT5551LT1
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon MPSA20 , en2 ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant , curves indicate IC­VCE limits of the transistor that must be observed for reliable operation. Collector , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack ON Semiconductor
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BC107B, MOTOROLA transistor bc107b equivalent MMBV2103LT1 MMPQ3725 MMBV3401LT1 MMBFJ175LT1 MPF4391RLRA 2N5639
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR · The SC­59 package can be ON Semiconductor
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MUN2111T1 2N5638RLRA MPQ6502 MPS3638A BF224 MPS4124
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 , the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan ON Semiconductor
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MPS-A70 equivalent MPSA70 MPS4126 MPS3640 MPS6530 MPS6531 MPS6562
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon COLLECTOR 3 2 , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , limits of the transistor that must be observed for reliable operation. Collector load lines for specific , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan ON Semiconductor
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2n2904 2n2905 BC338 hie hre hfe BC547 hie hre hfe K 2056 TO-226-AE MPS3904 MPS6568A MPS6571 MPS6595 MPS8093 MPSA16
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon , Voltage Emitter ­ Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Each Transistor , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan , transistor and adhesive tape visible. Flat side of transistor and carrier strip visible (adhesive tape on ON Semiconductor
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MPQ6842 MC3001 MPSH04 MPSH07A MPSH20 MPSH24 MPSH34
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , 160 1.7 5.6 - 3.0 6.5 MHz pF pF dB RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan , transistor and adhesive tape visible. Flat side of transistor and carrier strip visible (adhesive tape on ON Semiconductor
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transistor motorola 2n3053 Transistor BC107 motorola symbol transistor BC108 2N2904 transistor TO92 BC107 Transistor application notes MOTOROLA 2n2102 TRANSISTOR MPSA18 MPSH69 MSA1022 MSB709 MSB710 MSB1218A
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor NPN Silicon 14 13 12 11 , VCEO VCES VEBO IC One Transistor Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and , ­116 THERMAL CHARACTERISTICS Characteristic Symbol Max One Transistor Thermal Resistance, Junction to Ambient , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box. ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan ON Semiconductor
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2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola MPQ3725 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624
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