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Part Manufacturer Description PDF & SAMPLES
CSX-750FBF20000000T Citizen Finedevice Co Ltd CMOS Output Clock Oscillator, 20MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 4 PIN
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN

transistor BF200

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF200 TO-72 Metal Can Package BF200 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS , 0.65 pF Page 1 of 3 BF200 TO-72 Metal Can Package TO-72 Metal Can Package A B E , Limited Data Sheet 5K OUTER CARTON BOX Qty Gr Wt 80K 32 kgs Page 2 of 3 Notes BF200 Continental Device India
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BF200 transistor bf200 pin configuration bf200 datasheet J BF200 100MH C-120 BF200R
Abstract: DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor (NPN) Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28 + BR=55 + NR=1 + VAR=50 + IKR=0.22 + ISC=12.0000E-15 + NC=1.03 + NK=1 + RE=.03 + RB=.015 + RC=0.25 + CJE=60.000E-12 + VJE=.5 + MJE=.4 + CJC=15.432E-12 + VJC=.59364 + MJC=.40507 + FC=.7 + TF -
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DSC-5002 NC103 RE03 0000E-18 0000E-15 000E-12 40E-12 000E-9
Abstract: DMC20402 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC20402 Product type: Composite Transistor (NPN×2) 5 C 4 E Tr1 Tr2 E C 1 2 3 Parameters *$ .SUBCKT DMC20402 1 2 3 4 5 6 Q_Q1 6 2 1 QN1 Q_Q2 3 5 4 QN1 .MODEL QN1 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28 + BR=55 + NR=1 + VAR=50 + IKR=0.22 + ISC=12.0000E-15 + NC=1.03 + NK=1 + RE=0.03 + Panasonic
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Abstract: NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 200 Preferred device Dispositif recommandé The NPN planar transistor 6F 200 is intended for use in VHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF200 est destiné è être utilisé comme amplificateur VHF à gain réglable dans les récepteurs de télévision. VCEO 20 V -C12e 0,3 pF AGp 45 dB Maximum power dissipation Dissipation de puissance maximale Case TO-72 â'" See outline drawing CB-4 on -
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transistor 468 Transistor B C 468 transistor bf 175 BF-200
Abstract: â'" â'" 400 â'" â'" â'" 43. BF 173 25 40 4 37min. 7 10 25 260 â'" â'" 550 â'" â'" â'" 44. BF200 , '" â'" 2 NPN GENERAL PURPOSE TRANSISTOR 46. BEL100N 50 60 7 50/280 150 1 500 800 .05 .6 130 â'" â'" 10 39 PNP GENERAL PURPOSE TRANSISTOR 47. BEL 10OP 50 60 7 50/280 150 1 500 800 .05 .6 130 -
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2N2218 2N2219A 2N918 2N930 BEL 100N TRANSISTOR bel 100n transistor npn 2n 2222a transistor BEL 100N BEL100 transistor BF 245 143S3T BF200B 2N3501TV
Abstract: '" 550 â'" â'" â'" 44. BF200 20 30 3 15min. 3 10 20 150 â'" â'" 650 â'" â'" 2 45. BF200B 20 30 3 90min. 3 10 20 150 â'" â'" 650 â'" â'" 2 NPN GENERAL PURPOSE TRANSISTOR 46. BEL100N 50 60 7 50/280 150 1 500 800 .05 .6 130 â'" â'" â'" TO 39 PNP GENERAL PURPOSE TRANSISTOR 47. BEL 10OP 50 60 -
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2N3501 41 bf BEL100N TRANSISTOR BEL 167 transistor BEL BF200 BF 145 transistor BF 184 NPN transistor 2N2221A 2N3500 2N657 2N929
Abstract: current out of pin 8 an open-collector TTL output, a 5V CMOS output, or an NPN transistor can be used , 3K r10 25 23 1K r11 26 23 1K * * Models * .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200 tf=0.05nS) .model dclamp d(is=1e-30 ibv=0.266 bv=1.3 n=4) .ends 12 Elantec
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EL2070C EL2070CN EL2070CS 200MH MDP0031 MDP0027
Abstract: output, or an NPN transistor can be used. 9 EL2070 EL2070 Macromodel * Revision A. March 1992 , 26 23 1K * * Models * .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200 Intersil
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FN7031 ISO9000
Abstract: output, or an NPN transistor can be used. 57 EL2070C EL2070C 200MHz Current Feedback Amplifier , e6 26 O 4 O 1.0 r9 24 23 3 K rlO 25 23 1 K rll 26 23 1 K * Models .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200 tf=0.05nS) .model dclamp d(is=le-30 ibv=0.266 bv=1.3 .ends n=4) 59 -
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M2070
Abstract: transistor should be subtracted from the first term because, under loading and due to the class AB nature of , * .model qn npn (is=5e-15 bf=200 tf=0.1ns) .model qp pnp (is=5e-15 bf=200 tf=0.1ns) .model dclamp d (is Intersil
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EL2166 EL2166CN EL2166CS 110MH FN7052 115MH
Abstract: 0.092 Inch, 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES , V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 RB4 R11 TP Q8 , approximately 100 uA. With transistor current gains around 200, the short circuit current limits are typically , is focused on ensuring a pass transistor's long-term reliability over a wide range of load current , =100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS Analog Devices
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OP484 ad284 Hall Effect Current Measurements OP184 OP284 OP184/OP284/OP484 OP184/OP284/ C2167
Abstract: 0.092 Inch, 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES , V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 RB4 R11 TP Q8 , circuit conditions, this input current level is approximately 100 uA. With transistor current gains , is focused on ensuring a pass transistor's long-term reliability over a wide range of load current Analog Devices
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photo I-V amplifier 8pin twin-t
Abstract: Connected to V­. Transistor Count, 62. NOTES 1 Absolute maximum ratings apply to both DICE and , , 8,800 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 120. VCC RB1 , circuit conditions, this input current level is approximately 100 uA. With transistor current gains , control circuits, a great deal of design effort is focused on ensuring a pass transistor's long-term Analog Devices
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OP-482 Q810 OP184/OP184/OP284/OP484
Abstract: Substrate (Die Backside) Is Connected to V-. Transistor Count, 62. 1 NOTES â'˜Absolute maximum ratings , Backside) Is Connected to V-. Transistor Count, 120. Figure 1. Simplified Schematic OfllbflDO â¡ â , current level is approximately 100 (iA. With transistor current gains around 200, the short circuit , DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP -
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0P284/0P484 OP284/OP484
Abstract: , 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. ABSOLUTE MAXIMUM , Substrate (Die Backside) Is Connected to V­. Transistor Count, 120. RB1 TP JB1 R3 R4 QB6 QB5 , . With transistor current gains around 200, the short circuit current limits are typically 20 mA. The , design effort is focused on ensuring a pass transistor's long-term reliability over a wide range of load , =1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA Analog Devices
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OP484S OP484A R2996 bf200 equivalent
Abstract: . Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES 1 Absolute maximum , (Die Backside) Is Connected to V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 , current level is approximately 100 uA. With transistor current gains around 200, the short circuit , transistor's long-term reliability over a wide range of load current conditions. As a result, monitoring Analog Devices
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592E 100 MICROVOLTS POWER SUPPLY C2012
Abstract: circuit conditions, this input current level is approximately 100 uA. With transistor current gains , ensuring a pass transistor's long-term reliability over a wide range of load current conditions. As a , =100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS ­18­ REV. B OP184/OP284/OP484 OUTLINE DIMENSIONS Analog Devices
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folded cascode op amp 05E16 op284FP R2k diode OP184/ MS-012AA 6/02--D 9/02--D C00293
Abstract: ) Is C onnected to V-. Transistor Count, 62. NOTES A bsolute maximum ratings apply to both DICE , 0.080 X 0.110 Inch, 8,800 Sq. Mils Substrate (Die Backside) Is Connected to V-. Transistor Count, 120 , approximately 100 |jA. With transistor current gains around 200, the short circuit current limits are typically , () .MODEL DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC -
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0P184/0P284/0P484
Abstract: output short circuit conditions, this input current level is approximately 100 uA. With transistor , design effort is focused on ensuring a pass transistor's long-term reliability over a wide range of load , =130E-21) .MODEL DX D() .MODEL DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS ­18­ REV. A OP184/OP284/OP484 OUTLINE Analog Devices
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r2k v twin-T instrumentation amplifier 06/02--D
Abstract: level is approximately 100 |jA. With transistor current gains around 200, the short circuit current , ODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .M ODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .M ODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .M ODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS -1 8 - REV. 0 -
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