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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor BF200

Catalog Datasheet MFG & Type PDF Document Tags

BF200 transistor

Abstract: BF200 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF200 TO-72 Metal Can Package BF200 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS , 0.65 pF Page 1 of 3 BF200 TO-72 Metal Can Package TO-72 Metal Can Package A B E , Limited Data Sheet 5K OUTER CARTON BOX Qty Gr Wt 80K 32 kgs Page 2 of 3 Notes BF200
Continental Device India
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BF200 transistor bf200 pin configuration transistor BF200 bf200 datasheet J BF200 100MH C-120 BF200R

DSC5002

Abstract: BF200 transistor DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor (NPN) Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28 + BR=55 + NR=1 + VAR=50 + IKR=0.22 + ISC=12.0000E-15 + NC=1.03 + NK=1 + RE=.03 + RB=.015 + RC=0.25 + CJE=60.000E-12 + VJE=.5 + MJE=.4 + CJC=15.432E-12 + VJC=.59364 + MJC=.40507 + FC=.7 + TF
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DSC-5002 NC103 RE03 0000E-18 0000E-15 000E-12 40E-12 000E-9
Abstract: DMC20402 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC20402 Product type: Composite Transistor (NPN×2) 5 C 4 E Tr1 Tr2 E C 1 2 3 Parameters *$ .SUBCKT DMC20402 1 2 3 4 5 6 Q_Q1 6 2 1 QN1 Q_Q2 3 5 4 QN1 .MODEL QN1 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28 + BR=55 + NR=1 + VAR=50 + IKR=0.22 + ISC=12.0000E-15 + NC=1.03 + NK=1 + RE=0.03 + Panasonic
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BF200 transistor

Abstract: BF200 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 200 Preferred device Dispositif recommandé The NPN planar transistor 6F 200 is intended for use in VHF amplifier stages of TV receivers (AGC controlled stages). Le transistor planar NPN BF200 est destiné è être utilisé comme amplificateur VHF à gain réglable dans les récepteurs de télévision. VCEO 20 V -C12e 0,3 pF AGp 45 dB Maximum power dissipation Dissipation de puissance maximale Case TO-72 â'" See outline drawing CB-4 on
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transistor 468 Transistor B C 468 transistor bf 175 BF-200

BEL 100N TRANSISTOR

Abstract: BEL100N â'" â'" 400 â'" â'" â'" 43. BF 173 25 40 4 37min. 7 10 25 260 â'" â'" 550 â'" â'" â'" 44. BF200 , '" â'" 2 NPN GENERAL PURPOSE TRANSISTOR 46. BEL100N 50 60 7 50/280 150 1 500 800 .05 .6 130 â'" â'" 10 39 PNP GENERAL PURPOSE TRANSISTOR 47. BEL 10OP 50 60 7 50/280 150 1 500 800 .05 .6 130
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BEL 100N TRANSISTOR bel 100n transistor npn 2n 2222a transistor BEL 100N transistor BF 245 TRANSISTOR bd 657 143S3T 2N2218 2N2219A BF200B 2N3501TV 2N918

BEL100N

Abstract: bel 100n transistor '" 550 â'" â'" â'" 44. BF200 20 30 3 15min. 3 10 20 150 â'" â'" 650 â'" â'" 2 45. BF200B 20 30 3 90min. 3 10 20 150 â'" â'" 650 â'" â'" 2 NPN GENERAL PURPOSE TRANSISTOR 46. BEL100N 50 60 7 50/280 150 1 500 800 .05 .6 130 â'" â'" â'" TO 39 PNP GENERAL PURPOSE TRANSISTOR 47. BEL 10OP 50 60
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41 bf BEL100N TRANSISTOR BEL100 BEL 167 transistor 2n 2222 -31 BF 184 transistor 2N2221A 2N3500 2N3501 2N657 2N929 2N930

EL2070

Abstract: EL2070CN output, or an NPN transistor can be used. 9 EL2070 EL2070 Macromodel * Revision A. March 1992 , 26 23 1K * * Models * .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200
Intersil
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EL2070CN EL2070CS FN7031 200MH ISO9000
Abstract: output, or an NPN transistor can be used. 57 EL2070C EL2070C 200MHz Current Feedback Amplifier , e6 26 O 4 O 1.0 r9 24 23 3 K rlO 25 23 1 K rll 26 23 1 K * Models .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200 tf=0.05nS) .model dclamp d(is=le-30 ibv=0.266 bv=1.3 .ends n=4) 59 -
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M2070

BF200 transistor

Abstract: EL2070C current out of pin 8 an open-collector TTL output, a 5V CMOS output, or an NPN transistor can be used , 3K r10 25 23 1K r11 26 23 1K * * Models * .model qn npn (is=5e-15 bf=200 tf=0.05nS) .model qp pnp (is=5e-15 bf=200 tf=0.05nS) .model dclamp d(is=1e-30 ibv=0.266 bv=1.3 n=4) .ends 12
Elantec
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MDP0031 MDP0027

EL2166

Abstract: EL2166CN transistor should be subtracted from the first term because, under loading and due to the class AB nature of , * .model qn npn (is=5e-15 bf=200 tf=0.1ns) .model qp pnp (is=5e-15 bf=200 tf=0.1ns) .model dclamp d (is
Intersil
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EL2166 EL2166CN EL2166CS 110MH FN7052 115MH

OP484

Abstract: ad284 0.092 Inch, 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES , V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 RB4 R11 TP Q8 , approximately 100 uA. With transistor current gains around 200, the short circuit current limits are typically , is focused on ensuring a pass transistor's long-term reliability over a wide range of load current , =100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS
Analog Devices
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OP484 ad284 OP184 OP284 Hall Effect Current Measurements OP184/OP284/OP484 OP184/OP284/ C2167

ad284

Abstract: OP484 0.092 Inch, 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES , V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 RB4 R11 TP Q8 , circuit conditions, this input current level is approximately 100 uA. With transistor current gains , is focused on ensuring a pass transistor's long-term reliability over a wide range of load current
Analog Devices
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twin-t photo I-V amplifier 8pin

ad284

Abstract: OP184 Connected to V­. Transistor Count, 62. NOTES 1 Absolute maximum ratings apply to both DICE and , , 8,800 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 120. VCC RB1 , circuit conditions, this input current level is approximately 100 uA. With transistor current gains , control circuits, a great deal of design effort is focused on ensuring a pass transistor's long-term
Analog Devices
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OP-482 Q810 OP184/OP184/OP284/OP484

0P284

Abstract: Substrate (Die Backside) Is Connected to V-. Transistor Count, 62. 1 NOTES â'˜Absolute maximum ratings , Backside) Is Connected to V-. Transistor Count, 120. Figure 1. Simplified Schematic OfllbflDO â¡ â , current level is approximately 100 (iA. With transistor current gains around 200, the short circuit , DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP
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0P284 0P284/0P484 OP284/OP484

ad284

Abstract: OP484S , 5,980 Sq. Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. ABSOLUTE MAXIMUM , Substrate (Die Backside) Is Connected to V­. Transistor Count, 120. RB1 TP JB1 R3 R4 QB6 QB5 , . With transistor current gains around 200, the short circuit current limits are typically 20 mA. The , design effort is focused on ensuring a pass transistor's long-term reliability over a wide range of load , =1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA
Analog Devices
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OP484S OP484A R2996 bf200 equivalent

OP484A

Abstract: ad284 . Mils Substrate (Die Backside) Is Connected to V­. Transistor Count, 62. NOTES 1 Absolute maximum , (Die Backside) Is Connected to V­. Transistor Count, 120. VCC RB1 R4 R3 QB6 QB5 RB3 , current level is approximately 100 uA. With transistor current gains around 200, the short circuit , transistor's long-term reliability over a wide range of load current conditions. As a result, monitoring
Analog Devices
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592E 100 MICROVOLTS POWER SUPPLY C2012

OP484S

Abstract: twin-t circuit conditions, this input current level is approximately 100 uA. With transistor current gains , ensuring a pass transistor's long-term reliability over a wide range of load current conditions. As a , =100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS ­18­ REV. B OP184/OP284/OP484 OUTLINE DIMENSIONS
Analog Devices
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folded cascode op amp op284FP 05E16 R2k diode OP184/ MS-012AA 6/02--D 9/02--D C00293
Abstract: ) Is C onnected to V-. Transistor Count, 62. NOTES A bsolute maximum ratings apply to both DICE , 0.080 X 0.110 Inch, 8,800 Sq. Mils Substrate (Die Backside) Is Connected to V-. Transistor Count, 120 , approximately 100 |jA. With transistor current gains around 200, the short circuit current limits are typically , () .MODEL DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC -
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0P184/0P284/0P484

twin-T instrumentation amplifier

Abstract: r2k v output short circuit conditions, this input current level is approximately 100 uA. With transistor , design effort is focused on ensuring a pass transistor's long-term reliability over a wide range of load , =130E-21) .MODEL DX D() .MODEL DEN D(RS=100 KF=12E-15 AF=1) .MODEL DIN D(RS=5.358 KF=56E-15 AF=1) .MODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .MODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .MODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .MODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS ­18­ REV. A OP184/OP284/OP484 OUTLINE
Analog Devices
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twin-T instrumentation amplifier r2k v 06/02--D
Abstract: level is approximately 100 |jA. With transistor current gains around 200, the short circuit current , ODEL QIN NPN(BF=200 VA=200 IS=0.5E-16) .M ODEL QIP PNP(BF=100 VA=60 IS=0.5E-16) .M ODEL QON NPN(BF=200 VA=200 IS=0.5E-16 RC=50) .M ODEL QOP PNP(BF=200 VA=200 IS=0.5E-16 RC=160) .ENDS -1 8 - REV. 0 -
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