500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPS24740EVM-667 Texas Instruments Texas Instruments TPS24740EVM-667 visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments

transistor BC 667

Catalog Datasheet MFG & Type PDF Document Tags

transistor BC 667

Abstract: transistor BC 247 f'*" approx. = 1.7 mV/K; approx. = -2 mV/K /it, a r, 3) only applies to BC 656, BC 667, BC 668 , '=2ma) ='(,c) m A BC 666, BC 667, BC 668. BC 669, BC 600 /c = 0.2 mA;Ra , aktiengesellschaf-f- 2./ " for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial , AF input and driver stages (BC 559, BC 560 for low-noise input stages) and as complementary transistors to BC 546, BC 547, BC 548, BC 549, and BC 550. Type Ordering code BC5561' Q62702-C692 BC556VI
-
OCR Scan
BC659 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 BC556-BC560 Q62702-C692-V3 BC556A Q62702-C692-V1 BC556B Q62702-C692-V2

Q62702-C2325

Abstract: SIEMENS BC 807-16W PNP Silicon AF Transistor â'¢ For general AF applications â'¢ High , 0.7 â  667 !â  ÃE35L0S D1EG5SÃ 54*1 â  1998-11-01 SIEMENS BC 807-16W PNP , types: BC817W, BC818W (NPN) 2 Pin Configuration Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326 1 =B U L J U II II C C M M BC 807-40W 5Cs Q62702-C2327 1 =B Package SOT-323 BC 808-16W 5Es Q62702-C2328 1 =B 2=E BC 808-25W 5Fs Q62702-C2329 1 =B SOT
-
OCR Scan
Q62702-C2330 VS005561 D120551 D1E055E G1B05S3

CA3062

Abstract: a3081 . Derate lin e a rly 6.67 A m b ie n t Tem perature Range: O p e r a tin g , E RÉSISTANCE FOR R IS DETERMINED BY THE RELATIO NSHIP V e - V BC - Vr ( L E D) I (L E D ) R * 0 FOR , transistor o f the C A 3 0 8 1 d rivin g o n e segm ent o f an in can descent display. F i g . / -Schem atic diagram show ing on e transistor o f the C A 3 0 8 2 driving a lig h t-e m ittin g diode (L E D ).
-
OCR Scan
CA3081 CA3062 a3081 A3082 CA3082 A3081 A308I

TIPL780

Abstract: TIPL750 Characteristics Fully Guaranteed at 100°C BC â'¢ 1000 Volt Blocking Capability C r â'¢ 75 W at 25°C Case , vaiues vary slightly with transistor parameters, _, Texas 6-62 Instruments TIPL760, TIPL760A NPN , procast (no do«* not nacèssarily Includa Imctt» nfcmt^ c ct tearmgof.nttwpararatsr*. instruments 6-67 , slightly with transistor parameters. 6-68 Texas Instruments TIPL760B, TIPL760C NPN SILICON POWER
-
OCR Scan
TIPL750 T1PL760A TIPL780 TIK760A BC 251 transistor TIPL76Q PL760A 8VM801 BY205-4CO

transistor BC 667

Abstract: TO-8-090 , 2N 667 5 I I I 5 I I - 1 - 1 ° c /w I " Pulsed: pulse duration , N 3 7 6 2 O .O O I fiF 0 4 ,0 5 , 0 6 , Q7 = C A 3 7 2 5 QUAD TRANSISTOR ARRAY. * T H I S CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE TO COLLECTOR OF TRANSISTOR UNDER TEST * * KELVIN SENSING , Circuit for measuring switching times. 2-196 2N6674, 2N6675 WAVEFORMS V Bc «1- v-z N O
-
OCR Scan
TO-8-090 2N 6674

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres 905 641 905 905 905 905 645 645 645 649 649 649 655 661 667 671 677 683 685 693 699 703 703 903 709 , 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page *BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 *BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO
-
OCR Scan
catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

transistor BC 667

Abstract: SA NY O SEMICONDUCTOR 12 E D I CORP 7 c ì7D?ti D 0 D S 1 4 S ]l 3 3 - / 1 - p NPN Triple Diffused Planar Silicon Transistor 203 9 Color TV Horizontal Deflection Output Applications ©17528 Applications . High-voltage, power switching Features . . . . Fast speed , INPUT O- -4 W â'¬> 66.7 Vt f 47qu Vb E - S V > B: Base SANYOST03PML VtC , Outlineâ'"[2003A] un.it:mm 0MU 2.0 5 l/W r B-C k J 0 ! oe t 0.45 U
-
OCR Scan
Q0U37S1 T03PB IS-20MA IS-313 IS-313A

2SD1401

Abstract: 2042A SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, 5 2SD1401 2022 T' 33') 3 NPN Triple Diffused Planar Silicon Transistor ©1268B Color TV Horizontal Deflection Output Applications Features: · High breakdown voltage and high reliability · High switching , PWs20us , -[2003A] un.it:mm 2.0 Case Outline-[2009A] unit:mm 0.44 5 l/W U t J 0 ! 0.45 r B-C k oe
-
OCR Scan
2042A 5033K Q0037S1 1S-126A

ksd 302 250v, 10a

Abstract: irf 5630 .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor, depletion type Field-effect
-
OCR Scan
ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

3866S

Abstract: BF247 equivalent ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW , 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 BC 177 BC 178 BC 179 BC 182 BC 183 BC 184 BC190A, B BC 211 BC 211 A BC 212 BC 213 BC 214 BC 215 B BC 237 BC 238 BC 239 BC 264
-
OCR Scan
3866S BF247 equivalent Triac GK transistor bc 564 TI Small Signal FET Catalogue BC547E SP309

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed
-
OCR Scan
APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106

transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 419 BB 515 BB 619 BC 516 MPSA 63 MPSA 64 BC 516 BC 517 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 618 BCX 58 BCX 59 BCX 78 BCX 79 BCX 73 BCX 74 BCX 75 BCX 76 BC 327 BC 328 BCX 22 BCX 23 MPS 2222 MPS 2222 A MPS 2907 MPS 2907 A 2N 4126 , 27 BC 846 bC b4/ BC 848 BC 849 BC 850 BC 856 BC 857 BC 858 BC 859 BC 860 BCV 47 BCW 60 BCX 70 BCW 61 BCX 71 BCW 65 BCW 66 BCW 67 BCW 68 BC 807 BC 808 BCX 41 BCX 42 SMBT 2222
-
OCR Scan
TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 DIODE smd marking 22-16 DATASHEET TRANSISTOR BC 545 TRANSISTOR SMD MARKING CODE bc ru B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400

3094A

Abstract: (Ia BC)» perm ittin g program m able variation o f the integrated circu it sensitivity w ith either d igital a n d /o r analog prog ra m m in g signals. For exam ple, at an Ia BC of 100 mA, a o n e -m illiv , V A BC Pq BW o l = 7.5 m A = = V CE 'A B C Pq = = 15 V 500 /jA - 4 - kHz , 3 00 -. mA mA 100 - - - 6.67 · 16 /- · m W /°C , r bias current Oa BC term inal N o .5). Fig.5 - Device dissipation vs. a m p lifie r bias
-
OCR Scan
3094A CA3094 CA3094A CA3094B

equivalent transistor bul128

Abstract: HALL EFFECT 21E Transistor Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . Operation When the Transistor Is Switched Off and Vflyback > VCEO . . . . . . . , S TRANSISTOR: low power, switching T THYRISTOR: power C GALLIUM-ARSENIDE (Materials with a band gap > 1.3 eV) 1) U TRANSISTOR: power, switching X DIODE: multiplier, e.g , devices C TRANSISTOR: low power, audio frequency D TRANSISTOR: power, audio frequency E
Temic Semiconductors
Original
equivalent transistor bul128 HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent BUL208 Shortform Transistor Guide

germanium

Abstract: KPL 3009 0 8 Transistor Data Tables 4 BC 178 P+ 1 3 4 5 6 7 8 9 10 11 Type M n fr. Ma PI Gb , 100 4 ,1 9 ,2 0 ,2 2 ) ,k p l. B C 3 3 7 P Transistor Data Tables 6 BC 328+ 4 Typo M n fr .  , J J field-effect transistor ^ m J transistor l MOS field-effect transistor / Type num ber , * A raw material germanium B raw material silicon second letter C transistor for applications in AF range (Rlh >15° C/W) JC D power transistor for applications in AF range (FtlhJC 15° C/W) < F RF
-
OCR Scan
germanium KPL 3009 BLY34 AF339 ADY20 bf197 C9/C10

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SA1281 EINLEITUNG Das Ihnen vorliegende Daten- und Vergleichsbuch .transistor 2â' beinhaltet m ehrals 19000 , '" INTRODUCTION This comparative data book .transistor 2â' contains more than 19000 different transistors and , than one transistor with different polarities in one case pnp PNP structure p-ch P channel type (FET , television appliction CTV Chopper chop Darlington transistor Dari Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual Final stages end FET Field-effect
-
OCR Scan
Transistor 2SA 2SB 2SC 2SD 2SA1281 2SK596 C3885A 2SC906 2sd103 PA63H MPA68H BD241

S169

Abstract: LS169B 14 hüa bc 4 13 HûB cC 5 12 Hoc dC 6 11 HQd enp 11 7 10 3 ent gndC 8 9 Uload sn54s168 , -BIT UP/DOWN COUNTERS schematics of inputs and outputs EQUIVALENT OF A, B.C. D INPUTS Vcc-1- 20 kii , CLK Any Q RL = 667 n, C(_»45pF IS 25 ns â'¢PHL 17 25 Texas ^ 3 659 Instruments POST OFFICE , between two emitters of a multiple-emitter transistor. For these circuits, this rating applies between the
-
OCR Scan
SN54LS169B SN54S168 SN54S169 SN74LS169B SN74S168 SN74S169 S169 LS169B

IS43LR32640

Abstract: is61wv5128 S=NOW Stacked die, 10.5x13.5mm BGA 256M 32Mx8 DDR2 IS43DR83200A 1.8V8K 800,667,533,400BGA(60) 16Mx16 DDR2 IS43DR16160A 1.8V8K 800,667,533,400BGA(84) 16Mx16 DDR2 IS43DR16160B 1.8V8K 800,667,533,400BGA(84) 8Mx32 DDR2 IS43DR32801A 1.8V8K 533,400 BGA(126) 8Mx32 DDR2 IS43DR32801B 1.8V8K 800,667,533,400 BGA(126) 512M 64Mx8 DDR2 IS43DR86400B 1.8V8K 800,667,533,400BGA(60) 64Mx8 DDR2 IS43DR86400C1.8V8K 800,667,533,400BGA(60) 32Mx16 DDR2 IS43DR16320B 1.8V8K 800,667,533,400BGA(84) 32Mx16 DDR2
Integrated Silicon Solution
Original
IS43LR32640 is61wv5128 Product Selector Guide IS45S16800F IS25LD025 IS25LQ

ic 4060 as timer

Abstract: MOSFET BC 4060 Technology Corporation. U An external PNP transistor provides charge current that is user , Undervoltage Lockout Exit Threshold SEL0 = 0, SEL1 = VCC, VCC Increasing 6.67 6.81 6.95 V , undervoltage detection circuit. mV Note 5: Assumes that the external PNP pass transistor has negligible B-C reverse leakage current when the collector is biased at 2.8V (VBAT for two charged cells in series) and the base is biased at VCC. Note 6: Assumes that the external PNP pass transistor has
Linear Technology
Original
LTC4060 ic 4060 as timer MOSFET BC 4060 timer using IC 4060 THERMISTOR NTH4G 10K 1 MURATA THERMISTOR NTH4G 10K 1% MURATA ic 4060 pin diagram LTC4055 LTC4058 LTC4058X LTC4411 LTC4412

isl 6251 schematic

Abstract: smd transistor A4S ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517 , Transistors BC 257 . BC 259 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 167, BC 168, BC 169 (NPN) q 1 3 2 Type Marking Ordering Code BC 257 BC 257 A BC 257 B BC 258 BC 258 A BC 258 B BC 258 C BC 259 BC 259 B BC 259 C ­
Siemens
Original
isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Q62702-A772 Q62702-A731 Q62702-A773
Showing first 20 results.