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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

transistor BC 557

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR C 557 B

Abstract: transistor B 560 PNP SILICON TRANSISTOR TRANSISTOR PNP SILICIUM Compi, of BC 546 at BC 550 BC 556 *BC 557 BC 558 BC 559, BC560 General purpose BC 556/BC 557/BC 558 Usage général BC 556/BC 557/BC 553 Low noise BC 559/BC 560 Faible bruit BC 559/BC 560 The BC 556/BC 557/BC 560 are available in A and B groups ; the BC 558/BC 559 in A, B and C groups. Les BC 556/BC 557/BC 560 sont livrables dans les , © -65 V bc 556 -45 V bc 557/bc 560 vceo -30 V bc 558 -25 V bc 559 'cm -200 mA Maximum power
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BC557 TRANSISTOR C 557 B transistor B 560 transistor c 557 TRANSISTOR BC 560 transistor c 558 transistor bc 557 c le 556/BC 557/BC 559/BC 558/BC F139B- CB-76

equivalent transistor 8550

Abstract: 2sa1015 equivalent Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC , / 8550 2SA987 HN / BC 557 / 9015 2SA1323 HN / BC 558 / 9015 2SA855 HN / BC 556 / 9015 , HN / BC 327 / 8550 2SA1337 HN / BC 557 / 9015 2SA867 HN / BC 556 / 9015 2SA994 HN / BC 327 / 8550 2SA1340 HN / BC 557 / 9015 2SA869 HN / BC 327 / 8550 2SA999 HN / BC 557 / 9015 2SA1350 HN / BC 557 / 9015 2SA870 HN / BC 327 / 8550 2SA1004 HN / BC 557
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2SA1026 2SA906 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor TRANSISTOR BC 327 2SA978 2SA1318 2SA854 2SA989 2SA1334 2SA866

bc 558 equivalent

Abstract: pnp transistor 9015 Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC , / 9015 2SA579 HN / BC 560 / 9015 2SA723 HN / BC 327 / 8550 2SA495 HN / BC 557 / 9015 2SA608 HN / BC 558 / 9015 2SA724 HN / BC 558 / 9015 2SA499 HN / BC 557 / 9015 2SA609 , 556 / 9015 2SA730 HN / BC 327 / 8550 2SA522 HN / BC 557 / 9015 2SA620 HN / BC 559 / 9015 2SA733 HN / BC 557 / 9015 2SA524 HN / BC 558 / 9015 2SA628 HN / BC 558 / 9015
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2SA823 2SA705 bc 558 equivalent pnp transistor 9015 transistor BC 557 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA578 2SA721 2SA494 2SA725 2SA500 2SA610

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 , °C . 2 4 6 8 2 468 10 10° VCE(VI 10/10 408 BC 556, BC 557, BC 558, BC 559, BC 560 STATIC , BC 557 BC 560 -45 BC 558 -30 BC 559 -25 Emitter-base breakdown voltage Tension de , 557, BC 558, BC 559, BC 560 STATIC CHARACTERISTICS (Following) T u = 25°C (Unless otherwise stated , courant h21E BC 556 BC 557 75 475 75 475 BC 558 75 850 BC 559 125 850 BC 560 125 475
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Transistor - BC 547, CL 100 bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 103 546/BC 547/BC 549/BC

BC 547 PIN DIAGRAM

Abstract: IDG 600 547 47k BC 557 BC 557 VIAC 100µF S1 opened : - VLINE at IL = 20 & 120mA IL , 47k BC 557 BC 557 V RAC V ACLINE V IAC V ACLINE VTAC Gr = 20.log 100µF Gt , BC 557 BC 557 BC 547 20mA D4 1 Fmod HIGH PASS FILTER 27 82 D3 D2 , GAIN LINE BC 547 VACLINE BC 547 47k BC 557 BC 557 BC 547 47k RIN 3 , PASS FILTER 23 24 BC 557 LINE GAIN 47k 82 Fmod 1µF RIN 3 22 RING
STMicroelectronics
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ST952 TQFP32 ST952TQFP ST75951 BC 547 PIN DIAGRAM IDG 600 pin diagram of BC 547 STMicroelectronics Krypton

transistor BC 667

Abstract: transistor BC 247 aktiengesellschaf-f- 2./ " for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial , . weight 0.25 g Dimensions in mm Maximum ratings BC 556 BC 557 BC 558 BC 559 BC 560 Collector-base , characteristics apply. Type BC 556 BC 556 BC 556 BC 558, BC 557 BC 557, BC 559 BC 557, BC 559 BC 559 , ) 100 1203' 2003' 4003' BC 556 BC 557 BC 559 BC 558 BC 560 Collector cutoff current , characteristics (ramb = 25 °C) BC 556 BC 557 BC 558 BC 559 BC 560 Transition frequency ("Vce = 5 V; -/c
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BC659 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 BC556-BC560 BC5561 Q62702-C692 BC556VI Q62702-C692-V3 BC556A

IDG 600

Abstract: STMicroelectronics Krypton 557 BC 557 VACLINE VLAC 100µF S1 opened : - VLINE at IL = 20 & 120mA IL 600 , 547 47k BC 557 BC 557 VRAC and VTAC = 0 VACLINE VLAC VACLINE and VLAC = 0 VTAC , GAIN LINE BC 547 BC 547 47k BC 557 BC 557 BC 547 ILINE D4 1 Fmod , ACLINE BC 547 47k BC 557 BC 557 BC 547 1mA VD5/1.5MHz 0.75MHz DEMODULATOR , D2 31 20 2W/4W CONVERTER & HYBRID HIGH PASS FILTER 23 24 BC 557 LINE GAIN
STMicroelectronics
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ST952TQF7 Krypton daa Krypton isolation applications transistor 547 clid TRANSISTOR BC

IDG 600

Abstract: STMicroelectronics Krypton BC 547 BC 557 BC 557 BC 547 VACLINE BC 547 IL + IAC VLAC 100m F 600W , 547 BC 547 VACLINE 47kW BC 557 BC 557 VRAC and VTAC = 0 VACLINE VLAC , 100nF VDR 47m F IDG IDI LINI GAIN LINE 47kW BC 547 BC 557 BC 557 BC , LINI GAIN LINE BC 547 BC 547 VACLINE 47kW BC 557 BC 557 BC 547 1mA , FILTER 23 24 BC 557 LINE GAIN 47kW 82W Fmod 1m F D3 1 RIN 3 22
STMicroelectronics
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VTAC 4

BC 247 b transistor

Abstract: C558B SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 ' for AF input and driver stages BC 556, BC 557, BC , flth JA ftfhJC BC 556 BC 557 BC 558 BC 559 BC 660 -Vcbo " Vc e s -Vceo - V eb o " ÎCM , 556 BC 557 BC 558 VI /IFE BC 556 BC 557, BC 559 BC 558, BC 560 A hn Id h 90 180 (11 Oto 220) 1203 > BC 556 BC 557, BC 559 BC 558, BC 560 B />FE BC 558, BC 559, BC 560 C Af e /iFE group mA 0.01 , 5 V; -/c = 2 mA) Base-emitter voltage (~VCE = 5 V; - Ic = 10 mA) BC 556 BC 557 BC 558 " ÍCB0 -
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BC557VI BC 247 b transistor C558B bc556b equivalent BC 247 transistor bc 557 c bc557 siemens BC556 BC556B BC5571 BC557A BC557B

transistor bc 488

Abstract: transistor bc 557 c 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , 556 B 500 65 75 250 110 220 200 450 2 0,65 100/ 5 1505 4,5 S 10 BC 557 BC 557 A BC 557 B BC 557 C , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor bc 488 bc 547 b transistor TRANSISTOR BC 550 b transistor BC 490 bc 547 transistor C 547 B pin configuration BCW94 BC317P

TRANSISTOR BC 560c

Abstract: transistor BC 458 BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier · High Voltage: BC556, VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559 , 2001 BC556/557/558/559/560 Typical Characteristics -50 -45 1000 IB = -400µA IB = -350µA
Fairchild Semiconductor
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TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc558c bc557 cross reference BC557/bc557 cross reference BC556/557/558/559/560 BC557/560 BC558/559 BC556/557/558 BC559/560 15000MH

C557B

Abstract: C558 transistor , lB = 0) V (B R )C E O B C 556 BC 557 BC558 C o llecto r-B ase Breakdown Voltage (IC = - 1 0 0 nAdc) BC 556 BC 557 B C 558 E m itte r-B a s e Breakdown Voltage (lg = - 1 0 0 iiAdc, Iq - 0) BC556 B C 557 B C 558 'C E S B C 556 B C 557 BC 558 BC 556 BC 557 BC558 - - - - -2 .0 - 2 .0 - 2 .0 - - , C 556 B C 557/558 BC557A BC 556B /557B/558B BC557C 3.0 6.0 PF NF - - dB 2.0 2 .0 , ) (Continued) Characteristic ON CHARACTERISTICS D C Current Gain (Ic = -1 o nAdc, V c e = - 5 0 V ) BC 557A BC
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BC558B C557B C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B

bc 104 npn transistor

Abstract: bc 103 transistor HN / BC 556.559 PNP Silicon Expitaxial Planar Transistor for switching and AF amplifier , at -VCE = 80 V, T.= 125 °C at -VCE = 50 V,T= 125 °C at -Vâ'ž = 30 V, T= 125 °C ^t j HN / BC 556 HN / BC 557 HN / BC 558 HN/BC 556 HN/BC 557 HN/BC 558, HN/BC 559 'ces ''ces ''ces ces ''ces , manufactured in different pin configurations. Please refer to the "TO-92 TRANSISTOR PACKAGE OUTLINE" on page 80 , owned subsidiary of HtJNEV TECHNUJ.DGY LTD. ) SO 9 Q 0 2 - 9 HN / BC 556.559 Characteristics at T .
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BC549 bc 103 transistor transistor bc 102 pin configuration NPN transistor BC558 pin configuration transistor BC549 BC110
Abstract: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 , A , B , C BC 557 , B BC 558 , B TRANSISTOR (PNP ) TO â'" 92 f1 â'" ei s j q> FEATURES Power d is s ip a , Symbo1 BC5 56 BC 557 BC558 BC556 BC557 BC5 58 E m itter-base breakdown v o ltag e VCBO , ¯ 150 f =100MHz MHz BC556/557/558 Typical C haracteristics npE, NUkMAÃ , VOLTAGE (VOLTS) Capacitances C urrent-G ain - Bandwidth Product BC556/557/558 Typical C -
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56B/BC5 57B/BC5 270TYP 050TYP

BC557

Abstract: TRANSISTOR C 557 B MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR(PNP) FEATU RES dissipation Pcm : 0.6 2 5 W (T am b=25'C ) current IcM : -0.1 A V cbo; BC 556 : -80 V BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + , BC556/557/558 hFE, NORMALIZED D C CURRENT GAIN lc . COLLECTOR CURRENT (mAdc) lc , COLLECTOR , (NORMALIZED) BC556/557/558 lC , COLLECTOR CURRENT (AMP) lC, COLLECTOR CURRENT (mA) DC Current Gain
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transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC557B MCC BC558 pnp transistor PNP Transistor BC557 BCSS6B/BC557B/BC558B BC557/BC558

BF298

Abstract: BC 458 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor bf 422 NPN transistors BC 548 BC 558 PNP

transistor bf 422 NPN

Abstract: transistors BC 548 BC 558 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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transistor BC 338 BC 2222 BC 557 npn transistor bf 422 transistor 2N 5551 BC 547 pnp

of transistor bc558

Abstract: bc558 BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier · High Voltage: BC556, VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559 , , August 2002 BC556/557/558/559/560 Typical Characteristics -50 -45 1000 IB = -400µA IB =
Fairchild Semiconductor
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BC558TAR of transistor bc558 transistor bc558 features information of BC558 BC558TA BC558TF BC558TFR BC558ABU BC558ATA

transistor BC 458

Abstract: BC 458 transistor BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier · High Voltage: BC556, VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559 , , August 2002 BC556/557/558/559/560 Typical Characteristics -50 -45 1000 IB = -400µA IB =
Fairchild Semiconductor
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BC 458 transistor BC556CBU BC556CTA BC556TF BC556TFR BC556ABU BC556ATA

transistor B 560

Abstract: BC 557 PNP TRANSISTOR BC556/557/558/559/560 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH VOLTAGE: BC556, VCEo= -65V « LOW NOISE: BC559, BC560 â'¢ Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Capacitance VcbO BC556 -80 V , Corporation BC556/557/558/559/560 PNP EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC BASE-EMITTER , = -10mA 150 MHz Collector Base Capacitance CcBO Vcb= -10V, f=1 MHz 6 PF Noise Figure : BC556/557/558
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BC 557 PNP TRANSISTOR transistor bc 558 pnp B 557 PNP TRANSISTOR BC556.557 TRANSISTOR 557 Transistor BC 558
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